D2002UK - Datasheet Archive

 

D2002UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W ­ 28V ­ 1GHz

 

TetraFET D2002UK D2002UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W ­ 28V ­ 1GHz SINGLE ENDED C N (ty p ) A B ! D ( 2 p ls ) F ( 2 p ls ) H J FEATURES · SIMPLIFIED AMPLIFIER DESIGN M E I K G · SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1 SOURCE PIN 3 PIN 2 DRAIN GATE · LOW Crss · SIMPLE BIAS CIRCUITS DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45° Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005 · LOW NOISE · HIGH GAIN ­ 13 dB MINIMUM APPLICATIONS · VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain ­ Source Breakdown Voltage Gate ­ Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 29W 65V ±20V 2A ­65 to 150°C 200°C Prelim. 12/00 D2002UK D2002UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain­Source Typ. Max. Unit V VGS = 0 ID = 10mA VDS = 28V VGS = 0 2 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.4A GPS Common Source Power Gain PO = 5W Drain Efficiency VDS = 28V IDSS IGSS h Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance 65 1 dB 40 % 20:1 f = 1GHz S 13 IDQ = 0.2A 0.36 - Ciss Input Capacitance VDS = 0 VGS = ­5V f = 1MHz 20 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 11 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 1 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj­case Semelab plc. Thermal Resistance Junction ­ Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Max. 6.0°C / W Prelim. 12/00