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D0-23 Datasheet

Part Manufacturer Description PDF Type
D0234 MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0234-2M MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0234-3M MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0234-4M MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0234A MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0234B MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0234C MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238 MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238-2M MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238-3M MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238-4M MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238A MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238B MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan
D0238C MSI Electronics EVAR EXPONENTIAL VARACTOR for FREQUENCY-VOLTAGE LINEAR TUNING Scan

D0-23

Catalog Datasheet MFG & Type PDF Document Tags

d023

Abstract: PM-97-D023 -SSOPH-375 PM-97-D023 February 1998. VCR PRODUCTS KA3080 / KA3080D BLOCK DIAGRAM( 32SDIPH ) 32 31 , NC 1.25V 3 4 5 6 GND 7 8 FIN ELECTRONICS CW&CCW PM-97-D023 February , VREF I Voltage control reference 22 NC - No Connection PM-97-D023 February 1998 , ELECTRONICS PM-97-D023 February 1998. U VCR PRODUCTS KA3080 / KA3080D ) ABSOLUTE MAXIMUM , 1.7 25 150 75 Ambient temperature, Ta( ELECTRONICS PM-97-D023 February 1998
Samsung Electronics
Original
PM-97-D023 d023 11pin 3phase motor d023 transistor R101k 32-SDIPH-400 28-SSOPH-375 28SSOPH

D023

Abstract: samsung capstan motor Operating Temperature KA3080 32-SDIPH-400 - 20j ~ + 75j KA3080D 28-SSOPH-375 PM-97-D023 January. 1997 , ( | ) PM-97-D023 January. 1997. KA3080 PRELIMINARY VCR PRODUCTS ELECTRICAL CHARACTERISTICS ( Vcci =5V , Gout( Power Ground ) is connected to the circuit with the ground side or Rs. PM-97-D023 January , range is 2Vj VREFj '( Vcci -2V ). electronics PM-97-D023 January. 1997. KA3080 PRELIMINARY VCR , capacitor, approx.0.1 § is for the phase stabilization of the circuit. electronics PM-97-D023 January
-
OCR Scan
APP-B-01 samsung capstan motor SW11 I180K

PG-SOT-23

Abstract: marking SKs Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Value , 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I , , di F/dt =100 A/µs 0.83 9.1 3.3 0.23 0.92 1.2 14.5 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 , =30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.3 3.0 6.7 8.2 41 9.5 3.8 , BSS138N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold
Infineon Technologies
Original
PG-SOT-23 L6327 marking SKs PG-SOT23 dd1270 BSS138N L6327 L6433

dd1270

Abstract: D023 drain current Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs , 0.1 V µA - - 5 - 1 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 , ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 A, V GS=0 to 10 V 0.10 0.3 1.0 3.3 0.14 0.4 1.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS , 2012-04-04 BSS138N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ
Infineon Technologies
Original
IEC61249-2-21 JESD22-A114

SOT23 marking skS

Abstract: SKs SOT23 current I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Value 0.23 0.18 0.92 , GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 3.5 2.2 0.2 , ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 A, V GS=0 to 10 V 0.10 0.3 1.0 3.3 0.14 0.4 1.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS , . 2.2 page 5 2004-07-21 BSS138N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.23
Infineon Technologies
Original
SOT23 marking skS SKs SOT23 q67042-s4184 marking code SKs D26 SOT23 marking SKs sot-23 Q67042-S4184 Q67042-S4190 E6327 E6433

dd1270

Abstract: current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS , 1 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS , V DD=48 V, I D=0.23 A, V GS=0 to 10 V 0.10 0.3 1.0 3.3 0.14 0.4 1.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.3 , BSS138N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold
Infineon Technologies
Original

SOT23 marking skS

Abstract: D023 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 A, V DS=48 V , V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 0.2 - , V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 pF ns Gate Charge Characteristics V DD=48 V, I D=0.23 A, V GS=0 to 10 V nC Reverse Diode Diode continous , Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.23 A; V GS=10 V
Infineon Technologies
Original
diode sot-23 marking AG SKs 83 SKs TRANSISTOR

D023

Abstract: current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS , 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I , , di F/dt =100 A/µs 0.83 9.1 3.3 0.23 0.92 1.2 14.5 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 , =30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.3 3.0 6.7 8.2 43 10 4.2 , Drain-source on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th
Infineon Technologies
Original

SKs TRANSISTOR

Abstract: BSS138N L6327 0.18 0.92 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 , V GS=4.5 V, I D=0.19 A - 3.5 6.0 V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I , =30 V, V GS=10 V, I D=0.23 A, R G=6 pF ns Gate Charge Characteristics V DD=48 V, I D=0.23 , 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th)=f(T j); V DS=VGS , Drain-source breakdown voltage V GS=f(Q gate); I D=0.23 A pulsed V BR(DSS)=f(T j); I D=250 µA
Infineon Technologies
Original
D019 esd 20.20
Abstract: I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Reverse diode d v , 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I , =100 A/µs T A=25 °C 0.83 9.1 3.3 0.23 0.92 1.2 14.5 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 , =30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.3 3.0 6.7 8.2 41 9.5 3.8 , on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j Infineon Technologies
Original

SKs TRANSISTOR

Abstract: marking code SKs 0.18 I D,pulse T A=25 °C 0.92 Reverse diode dv /dt dv /dt I D=0.23 A, V DS=48 V, di , 6.0 V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 0.2 , - 3.3 5 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 pF ns Gate Charge Characteristics V DD=48 V, I D=0.23 A, V GS=0 to 10 V nC Reverse , R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=26 µA parameter: I D 8
Infineon Technologies
Original
BSS138N Q67042-S41 Q67045-A5069

dd1270

Abstract: drain current Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs , 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I , =100 A/µs T A=25 °C 0.83 9.1 3.3 0.23 0.92 1.2 14.5 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 , =30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.3 3.0 6.7 8.2 41 9.5 3.8 , on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j
Infineon Technologies
Original
H6327 H6433

D023

Abstract: PG-SOT23 0.18 0.92 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 , 6.0 V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 0.2 , - 3.3 5 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 pF ns Gate Charge Characteristics V DD=48 V, I D=0.23 A, V GS=0 to 10 V nC Reverse , BSS138N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.23
Infineon Technologies
Original
SIPMOS N-channel Small-Signal-Transistor f023 2005082

0 281 005 023

Abstract: D023 A=25 °C T A=70 °C Continuous drain current Pulsed drain current I D,pulse T A=25 °C I D=0.23 , =0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 3.5 2.2 , 0.23 0.92 1.2 14.5 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 A, V GS=0 to 10 V 0.10 0.3 1.0 3.3 0.14 0.4 1.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=0.23 A, R , Drain-source on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th
Infineon Technologies
Original
0 281 005 023 0 281 020 023 0 281 003 018 JESD22-C101
Abstract: 0.92 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 A , V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I D|R DS(on)max, I D=0.18 A 0.1 0.2 - , V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.23 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=48 V, I D=0.23 A, V GS=0 to 10 V nC Reverse Diode Diode continous , on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th Infineon Technologies
Original
Abstract: 0.23 T A=70 °C 0.18 I D,pulse T A=25 °C 0.92 Reverse diode dv /dt dv /dt I D=0.23 , , I D=0.19 A - 3.5 6.0 V GS=10 V, I D=0.23 A - 2.2 3.5 |V DS|>2|I D|R DS(on , =30 V, V GS=10 V, I D=0.23 A, R G=6 â"¦ pF ns Gate Charge Characteristics V DD=48 V, I D=0.23 , . gate threshold voltage R DS(on)=f(T j); I D=0.23 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D , voltage V GS=f(Q gate); I D=0.23 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 70 12 Infineon Technologies
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marking SKs

Abstract: BSS138N drain current Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs , 3.3 10 4.0 nA V GS=4.5 V, I D=0.19 A V GS=10 V, I D=0.23 A Transconductance g fs |V DS|>2|I , =100 A/µs T A=25 °C 0.83 9.1 3.3 0.23 0.92 1.2 14.5 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.23 , =30 V, V GS=10 V, I D=0.23 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.3 3.0 6.7 8.2 41 9.5 3.8 , . 2.86 page 5 2012-04-17 BSS138N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.23
Infineon Technologies
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Abstract: Flow sensor Immersion sensor with integrated processor FCS-GL1/2A4-AP8X-H1141/D023 I Flow sensor for liquid media I Calorimetric principle I Adjustment via potentiometer I LED band I Sensor with earthing option I 3-wire DC, 21â'¦26 VDC I NO contact, PNP output I Plug-in device, M12 x 1 Wiring diagram FCS-GL1/2A4-AP8X-H1141/D023 6870213 Operating range water Oil operating range Stand-by time Switch-on time Switch-off time Temperature jump Hans Turck
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FCS-GL1/2A4-AP8X-H1141/D023 26VDC 2013-07-13T18 D-45472

D023

Abstract: > :M M D I M E N S IO N S I IN M E T R IC CD DO NOT I SC A LE O D R A W IN G EN-0IC(032)M XJ-32 D.023]S53553.DGN
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OCR Scan
Abstract: ,#30;12>CE 8E D= 8E # ;+ #27;2#19; 3#27;2#(!#30;#27; #18; #16; ' -
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12345637892AB8CDDE 56789AB12ACA112ADE2FA 888F88 222262222C2222D2222 22222E2 222282222B22226
Abstract: : D023 = B7 ± MSB, D 016 = BO ± LSB. In power-down (PDB = 0), outputs are controlled by the OSS_SEL , ], 9 [D023] STRAP 00: Control Signal Filter DISABLED I, LVCMOS 01: Control Signal Filter ENABLED -
OCR Scan
DS92LV2421 DS92LV2422 92LV2421/D S92LV2422 LS321A LV2422

LC70310

Abstract: LC70310BG (GPIO1) SI (GPIO0) D023 D022 D01 D00 D123 D122 D31 D30 D423 D422 D51 D50 D023 D022 BUSY (GPIO3) 0.4s .8(a) SCK (GPIO1) SI (GPIO0) BUSY (GPIO3) D023 , D023 D022 D021 D020 D019 D018 D017 D016 ACK D015 D014 START SCL (GPIO13) SDA (GPIO14 , SLAD1 SLAD0 write bit ACK D023 D022 D021 D52 D51 D50 ACK STOP 3.34.6[s
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LC70310BG LC70310KBG LC70310W FBGA64 FBGA64K SQFP64 LC70310 LC7031 LE25FW056CS LC70310BG/KGB/W GPIO13-14 GPIO10-11
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