Datasheet Search Results			1 - 50 of about 210 for D-20
	D20	STMicroelectronics	MEMORY MICROMODULES GENERAL INFORMATION FOR D1, D	1163.36 Kb,  13 Pages.
	D20	STMicroelectronics	Super 35 mm Micromodules for Smartcards and Memory Cards	27.73 Kb,  2 Pages.
	D20	STMicroelectronics	Memory Micromodules General Information for D1, D2 and C Packaging	275.54 Kb,  13 Pages.
	D-20	A.C.L. Mica Capacitors	Mica Capacitor Series - Dipped Radials	746.44 Kb,  6 Pages.
	D200	MCE / KDI Corporation	DIVIDER/COMBINER, POWER	103.11 Kb,  1 Pages.
	d200002	Infineon Technologies	64X2, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM	82.24 Kb,  12 Pages.
	D2001UK	Semelab	Metal Gate RF Silicon FET	46.29 Kb,  4 Pages.
	D2001UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED	51.88 Kb,  4 Pages.
	D2002	Semelab	METAL GATE RF SILICON FET	14.78 Kb,  2 Pages.
	D2002AL	Memsic, Inc.	Low Cost, ±10 g Dual Axis Accelerometer with Digital Outputs	364.67 Kb,  8 Pages.
	D2002BL	Memsic, Inc.	Low Cost, ±10 g Dual Axis Accelerometer with Digital Outputs	364.67 Kb,  8 Pages.
	D2002UK	Semelab	METAL GATE RF SILICON FET	18.95 Kb,  2 Pages.
	D2002UK	Semelab	Metal Gate RF Silicon FET	14.79 Kb,  2 Pages.
	D2003	Semelab	METAL GATE RF SILICON FET	59.17 Kb,  4 Pages.
	D2003	N/A	Semiconductor Devices, Diode, and SCR Datasheet Catalog	59.76 Kb,  1 Pages.
	D2003UK	Semelab	Metal Gate RF Silicon FET	57.6 Kb,  4 Pages.
	D2004UK	Semelab	METAL GATE RF SILICON FET	51.17 Kb,  4 Pages.
	D2005	Semelab	METAL GATE RF SILICON FET	14.78 Kb,  2 Pages.
	D2005UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED	18.96 Kb,  2 Pages.
	D2005UK	Semelab	Metal Gate RF Silicon FET	14.79 Kb,  2 Pages.
	D2006UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W - 28V - 1GHz PUSH-PULL	16.66 Kb,  2 Pages.
	D2007	Semelab	METAL GATE RF SILICON FET	17.38 Kb,  2 Pages.
	D2007UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 400MHz SINGLE ENDED	17.36 Kb,  2 Pages.
	D2008	Semelab	METAL GATE RF SILICON FET	18.69 Kb,  2 Pages.
	D-200-82 (D17660-000)	Tyco Electronics	MiniSeal Splices; D-200-82 ( Raychem )	205.27 Kb,  4 Pages.
	D-200-82 (D17660-000)	Tyco Electronics	MiniSeal Splices; D-200-82 ( Raychem )	41.21 Kb,  2 Pages.
	D-200-83 (A36675-000)	Tyco Electronics	MiniSeal Splices; D-200-83 ( Raychem )	41.21 Kb,  2 Pages.
	D-200-83 (A36675-000)	Tyco Electronics	MiniSeal Splices; D-200-83 ( Raychem )	205.27 Kb,  4 Pages.
	D-200-84 (C60253-000)	Tyco Electronics	MiniSeal Splices; D-200-84 ( Raychem )	205.27 Kb,  4 Pages.
	D-200-84 (C60253-000)	Tyco Electronics	MiniSeal Splices; D-200-84 ( Raychem )	41.21 Kb,  2 Pages.
	D2008UK	Semelab	GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 400MHz-SINGLE ENDED	18.69 Kb,  2 Pages.
	D200BM16A	Usha Ltd.	200A Iout, 1600V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200BM16C	Usha Ltd.	200A Iout, 1600V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200BM4A	Usha Ltd.	200A Iout, 400V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200BM4C	Usha Ltd.	200A Iout, 400V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200C	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	69.92 Kb,  1 Pages.
	D200D	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	69.92 Kb,  1 Pages.
	D200HF16A	Usha Ltd.	200A Iout, 1600V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200HF16C	Usha Ltd.	200A Iout, 1600V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200HF4A	Usha Ltd.	200A Iout, 400V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200HF4C	Usha Ltd.	200A Iout, 400V Vrrm General Purpose Silicon Rectifier	81.19 Kb,  2 Pages.
	D200HL	Facon Semiconductor	500mA Iout, 20kV Vrrm General Purpose Silicon Rectifier	225.07 Kb,  7 Pages.
	D200HL	Silec Semiconductors	Shortform Data Book 1976	51.53 Kb,  1 Pages.
	D200HL	Thomson-CSF	Shortform Semiconductor Catalogue 1982	145.88 Kb,  1 Pages.
	D200LC40B	Shindengen Electric Mfg. Co., Ltd.	DIODE ULTRA FAST RECOVERY RECTIFIER 400V 200A 3MODULES	264.02 Kb,  6 Pages.
	D200LC40B	Shindengen Electric Mfg. Co., Ltd.	Super Fast Recovery Rectifiers(400V 200A)	240.42 Kb,  6 Pages.
	D200LC4B	Shindengen Electric Mfg. Co., Ltd.	Super Fast Recovery Rectifiers - Center Tap, Common Cathode (Module)	264.03 Kb,  6 Pages.
	D200-PS-4M	NEC Tokin	Optical Isolators	198.36 Kb,  24 Pages.
	D201	N/A	Single & Dual Output Miniature, 2W SIP DC/DC Converters	88.38 Kb,  2 Pages.
	D2010	Pixim	Pixim D2000 Video Imaging System for Advanced CCTV Cameras	132.42 Kb,  2 Pages.
	Datasheets per page:  50 | 250 | 500

Fulltext Datasheet Results		1 - 50 of about 10000+ for D-20
	First line: Dim. Min. 0.51 0.77 Millimeters Typ. Max. Min. 0.020 1.65 0.25 2.54 17.78 1.27 0.030 Inches Typ. Max. OUTLINE MECHANICAL DATA Abstract: .. D 20 0.787. E 8.5 0.335. e 2.54 0.100. e3 17.78 0.700. F 7.1 0.280. i 5.1 0.201. L 3.3 0.130. Z 1.27 0.050 ..  Tags: 51 A1   datasheet abstract..	32.05 Kb	1 Pages	Original
	First line: Dim. Min. 1.27 0.51 1.39 Millimeters Typ. Max. Min. 0.020 1.65 0.25 2.54 15.24 2.54 0.050 0.055 Inches Typ. Max. OUTLINE MECHANICAL DATA Abstract: .. D 20 0.787. E 8.5 0.335. e 2.54 0.100. e3 15.24 0.600. F 7.1 0.280. i 5.1 0.201. L 3.3 0.130. Z 1.27 2.54 0.050 ..  Tags: DIP14   datasheet abstract..	30.25 Kb	1 Pages	Original
	First line: Small Adaptors with Worldwide Input ADP-G2 Series Adaptors, Chargers/Switching Power Supplies Abstract: .. External dimensions 38 W 63 D 20 H mm. MITSUMI. DIMENSIONS. 5W Small AC Adaptors with Worldwide Input. 20. 38. 63. Unit: mm. ..  Tags:   ADP-G2	41.29 Kb	2 Pages	Original
	First line: 1.27 2.54 17.78 0.130 0.050 MIN. 0.51 0.77 0.25 1.65 Abstract: .. D 20 0.787. E 8.5 0.335. e 2.54 0.100. e3 17.78 0.700. F 7.1 0.280. I 5.1 0.201. L 3.3 0.130. Z 1.27 0.050 ..  Tags:   datasheet abstract..	42 Kb	2 Pages	Original
	First line: Adaptors with Worldwide Input (Japan, North America) ADP-S4W Series Adaptors, Chargers/Switching Power Supplies Abstract: .. Material Safety Law Japan , Conforms to IEC60950 IEC60950 External dimensions 49 W 53 D 20 H mm except for plug MITSUMI. 4W AC Adaptors with Worldwide Input Japan, North America DIMENSIONS. ATTACHMENT ..  Tags:   ADP-S4W	68.42 Kb	2 Pages	Original
	First line: RF loop antenna radio specification Antenna (for Home) XMA-P1F9 Wireless Communication Components Abstract: .. External dimensions: 60 W 70 D 20 H mm 4. Connector: SMB 5. Cable length: 20 feet. MITSUMI. DIMENSIONS. XM Antenna for Home *For the technical details of the products in this page, please refer ..  Tags: radio specification RF loop antenna   XMA-P1F9	173.21 Kb	2 Pages	Original
	First line: UTC A-26 B25667B5237A375 MKK480-D-16.7-01 MKK525-D-20-01 Abstract: .. Power Capacitors B25667B5237A375 B25667B5237A375 . Power Factor Correction MKK480-D-16 MKK480-D-16 .7-01 / MKK525-D-20-01. Edition 2. FK PFC RD / VA 20.10.05. Page 1 of 3. Construction Dimensional drawing. Dielectric: Polypropylene ..  Tags: UTC A-26 B25667B5237A375   MKK480-D-16 MKK525-D-20-01	96.75 Kb	3 Pages	Original
	First line: UTC A-26 B25667B4277A375 MKK440-D-16.7-01/MKK480-D-20-01 Abstract: .. Power Factor Correction PhaseCap MKK440-D-16 MKK440-D-16 .7-01/MKK480-D-20-01. Edition 3. FK PFC RD / VA 20.10.05. Page 1 of 3. Construction Dimensional drawing. Ñ Dielectric: Polypropylene film Ñ Gas-impregnated ..  Tags: UTC A-26 B25667B4277A375   MKK440-D-16	98.5 Kb	3 Pages	Original
	First line: 1.27 2.54 0.050 2.54 15.24 0.130 0.100 MIN. 0.51 1.39 0.25 1.65 Abstract: .. D 20 0.787. E 8.5 0.335. e 2.54 0.100. e3 15.24 0.600. F 7.1 0.280. I 5.1 0.201. L 3.3 0.130. Z 1.27 2.54 0.050 ..  Tags:   datasheet abstract..	39.12 Kb	2 Pages	Original
	First line: TSSOP: LEAD Note 2.0"0.05 Note Abstract: .. ECN: S-04319 S-04319 —Rev. D, 20-Aug-01 20-Aug-01 DWG: 90-2370-1 ..  Tags:   datasheet abstract..	14.54 Kb	1 Pages	Original
	First line: NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION CENTER LEAD WHEN FORMED PARALLEL. DIMENSION DOES INCLUDE MOLD FLASH. INCHES 0.960 0.984 0.274 0.295 0.140 0.200 0.015 0.022 0.050 0.045 0.060 0.100 0.008 0.015 0.110 0.148 0.300 0.020 0.040 0.051 MILLIMETERS 24 Abstract: .. D 20 PL. ‐T‐ M A M 0.25 0.010 T. E. B. C. F. 1.27 BSC 0.050 BSC. R ‐‐‐ 1.29 ‐‐‐ 0.051. F 16 PL. R 4 PL. L ..  Tags:   datasheet abstract..	15.63 Kb	1 Pages	Original
	First line: Ultrasonic humidifier transducer ultrasonic humidifier Mist Ultrasonic Humidifier Nebulizer Ultrasonic humidifier circuit Ultrasonic Transducer Humidifier Lattron's transducers ultra sonic humidifier designed special users need high corrosion resistance. unique electrod ceramic (TiN) thin film. ELEC Abstract: .. DIMENSION D 20 mm X 1.25 mm D 20 mm X 0.85 mm �0.1 mm. THICKNESS 1.25 mm 0.85 mm �0.05 mm. ELECTRODE DIMENSION. D 14 mm D 10 mm. www.lattron.com. SPECIFICATIONS. Specifications Unit Values Condition of measurement ..  Tags: Ultrasonic humidifier circuit Nebulizer Mist Ultrasonic Humidifier ultrasonic humidifier Ultrasonic humidifier transducer   datasheet abstract..	42.11 Kb	2 Pages	Original
	First line: BSZ100N06LS3* BSZ100N06LS3 BSZ100N06LS3 OptiMOS Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant; Halogen Free Qualified ac Abstract: .. Avalanche energy, single pulse5 E AS I D=20 A, R GS=25 Ω 55 mJ. Gate source voltage V GS �20 V. 5 See figure 13 for more detailed information. Value. 1 J-STD20 J-STD20 and JESD22 JESD22 . 4 See figure 3 for more detailed ..  Tags: BSZ100N06LS3 BSZ100N06LS3*   BSZ100N06LS3	235.84 Kb	9 Pages	Original
	First line: BSZ067N06LS3* BSZ067N06LS3 BSZ067N06LS3 OptiMOSTM3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) Very on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli Abstract: .. Avalanche energy, single pulse4 E AS I D=20 A, R GS=25 Ω 118 mJ. Gate source voltage V GS �20 V. 4 See figure 13 for more detailed information. Value. 1 J-STD20 J-STD20 and JESD22 JESD22 . 3 See figure 3 for more detailed ..  Tags: BSZ067N06LS3 BSZ067N06LS3*   BSZ067N06LS3	235.34 Kb	9 Pages	Original
	First line: BSC150N03LD OptiMOS®3 Power-Transistors Features Dual N-channel, logic level Fast switching MOSFETs SMPS Optimized technology DC/DC converters Qualified according JEDEC1) target applications Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) Superior thermal resistance 100% Ava Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω mJ. Gate source voltage V GS V. Power dissipation P tot T C=25 �C W. T A=25 �C 3 3.6 1.5. Operating and storage temperature T j, T stg �C. IEC climatic category ..  Tags:   BSC150N03LD	311.46 Kb	10 Pages	Original
	First line: BSC072N03LD OptiMOS®3 Power-Transistors Features Dual N-channel, logic level Fast switching MOSFETs SMPS Optimized technology DC/DC converters Qualified according JEDEC1) target applications Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) Superior thermal resistance 100% ava Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω mJ. Gate source voltage V GS V. Power dissipation P tot T C=25 �C W. T A=25 �C 3 3.6 1.5. Operating and storage temperature T j, T stg �C. IEC climatic category ..  Tags:   BSC072N03LD	311.51 Kb	10 Pages	Original
	First line: BSZ067N06LS3 OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) Very on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according J Abstract: .. Avalanche energy, single pulse4 E AS I D=20 A, R GS=25 Ω 118 mJ. Gate source voltage V GS �20 V. 4 See figure 13 for more detailed information. Value. 1 J-STD20 J-STD20 and JESD22 JESD22 . 3 See figure 3 for more detailed ..  Tags:   BSZ067N06LS3	480.1 Kb	9 Pages	Original
	First line: BSZ100N06LS3* BSZ100N06LS3 OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according JEDEC1) target Abstract: .. Avalanche energy, single pulse5 E AS I D=20 A, R GS=25 Ω 55 mJ. Gate source voltage V GS �20 V. 5 See figure 13 for more detailed information. Value. 1 J-STD20 J-STD20 and JESD22 JESD22 . 4 See figure 3 for more detailed ..  Tags: BSZ100N06LS3 G  BSZ100N06LS3*   BSZ100N06LS3	479.69 Kb	9 Pages	Original
	First line: IPP50CN10N 49cn10n* IPB50CN10N IPD49CN10N IPI50CN10N IPP50CN10N IPU49CN10N OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) targe Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω 29 mJ. Reverse diode dv /dt dv /dt. I D=20 A, V DS=80 V, di /dt =100 A/μs, T j,max=175 �C. 6 kV/μs. Gate source voltage3 V GS �20 V. Power dissipation P tot ..  Tags: 49cn10n* TO263  IPP50CN10N   IPB50CN10N IPD49CN10N IPI50CN10N IPP50CN10N IPU49CN10N	705.71 Kb	13 Pages	Original
	First line: IPB50CN10N IPD49CN10N IPI50CN10N IPP50CN10N OptiMOS®2 Power-Transistor Product Summary Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) target application I Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω 29 mJ. Reverse diode dv /dt dv /dt. I D=20 A, V DS=80 V, di /dt =100 A/μs, T j,max=175 �C. 6 kV/μs. Gate source voltage3 V GS �20 V. Power dissipation P tot ..  Tags: 49cn10n   IPB50CN10N IPD49CN10N IPI50CN10N IPP50CN10N	486.23 Kb	12 Pages	Original
	First line: IPB50CN10N IPD49CN10N IPI50CN10N IPP50CN10N OptiMOS®2 Power-Transistor Product Summary Features N-channel, normal level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) operating temperature Pb-free lead plating; RoHS compliant Qualified according JEDEC1) target application I Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω 29 mJ. Reverse diode dv /dt dv /dt. I D=20 A, V DS=80 V, di /dt =100 A/μs, T j,max=175 �C. 6 kV/μs. Gate source voltage3 V GS �20 V. Power dissipation P tot ..  Tags: IPP50CN10N   IPB50CN10N IPD49CN10N IPI50CN10N IPP50CN10N	546.68 Kb	13 Pages	Original
	First line: BSZ040N04LS BSZ040N04LS OptiMOS®3 Power-Transistor Features Fast switching MOSFET SMPS Optimized technology DC/DC converters Qualified according JEDEC target applications N-channel Logic level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) Superior thermal resistance 100% A Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω 130 mJ. Gate source voltage V GS �20 V. Value. 1 J-STD20 J-STD20 and JESD22 JESD22 . V DS 40 V. R DS on ,max 4.0 mΩ. I D 40 A. Product Summary. Type Package Marking. BSZ040N04LS BSZ040N04LS ..  Tags: BSZ040N04LS DS 69   BSZ040N04LS	321.84 Kb	9 Pages	Original
	First line: BSZ097N04LS G BSZ097N04LS OptiMOS®3 Power-Transistor Features Fast switching MOSFET SMPS Optimized technology DC/DC converters Qualified according JEDEC target applications N-channel Logic level Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) Superior thermal resistance 100% Abstract: .. Avalanche energy, single pulse E AS I D=20 A, R GS=25 Ω 20 mJ. Gate source voltage V GS �20 V. Value. 1 J-STD20 J-STD20 and JESD22 JESD22 . V DS 40 V. R DS on ,max 9.7 mΩ. I D 40 A. Product Summary. Type Package Marking. BSZ097N04LS BSZ097N04LS ..  Tags: BSZ097N04LS G   BSZ097N04LS	319.05 Kb	9 Pages	Original
	First line: 0650 12-Apr-07 Taiwan Oasis Mono Color Chip Unit Price (USD) Hong Kong Package Series Dome Water clear Flat Water clear) Emitting Color Dominant Wavelength Abstract: .. MG High bright Green 572 D 20 2.00 18-51 140 US$0.0280 US$0.0240 US$0.0210. Y Yellow 586 C 20 2.15 6.5-18 140 US$0.0220 US$0.0180 US$0.0160. MY High bright Yellow 590 F 20 2.00 146-417 140. MA High Bright ..  Tags: 0650   datasheet abstract..	169.93 Kb	1 Pages	Original
	First line: B25667B3397A375 MKK400-D-20-01 Abstract: .. Power Capacitors B25667B3397A375 B25667B3397A375 . Power Factor Correction MKK400-D-20-01. Edition 2. FK PFC RD / VA 20.10.05. Page 1 of 3. Construction Dimensional drawing. Ñ Dielectric: Polypropylene film Ñ Gas ..  Tags:   MKK400-D-20-01	96.46 Kb	3 Pages	Original
	First line: B25667B4337A375 MKK440-D-20-01 Abstract: .. Power Capacitors B25667B4337A375 B25667B4337A375 . Power Factor Correction MKK440-D-20-01. Edition 2. FK PFC RD / VA 20.10.05. Page 1 of 3. Construction Dimensional drawing. Ñ Dielectric: Polypropylene film Ñ Gas ..  Tags:   MKK440-D-20-01	93.5 Kb	3 Pages	Original
	First line: MKK415-D-20 B25667B4387A375 MKK415-D-20-01 Abstract: .. Power Capacitors B25667B4387A375 B25667B4387A375 . Power Factor Correction MKK415-D-20-01. Edition 1. FK PFC RD / VA 10.03.05. Construction Dimensional drawing. Dielectric: Polypropylene film Gas-impregnated ..  Tags: MKK415-D-20   MKK415-D-20-01	124.89 Kb	3 Pages	Original
	First line: IC61-0644-052 64-pin Socket (Manually Soldering Type) Made Yamaichi Electronics Co., Ltd. IC61-0644-052 socket that soldered foot pattern 64-pin 0.8mm-pitch (64P6N-A) package (manually soldering type). Abstract: .. Dimensions 20.8 D ×20.0 W ×6.2 H mm. Foot Pattern Reference Dimensions See Appendix A "Reference Dimensional Drawing for Common. 64-pin 64-pin 0.8mm-pitch QFP Foot Pattern". IC61-0644-052 IC61-0644-052 64 ..  Tags: Yamaichi Electronics  IC-Socket*  IC61-080-079  IC SOCKET   IC61-0644-052	680.94 Kb	7 Pages	Original
	First line: BSZ076N06NS3 OptiMOSTM3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant; Halogen Free Qualified Abstract: .. Avalanche energy, single pulse5 E AS I D=20 A, R GS=25 Ω 118 mJ. Gate source voltage V GS �20 V. 2 Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 75A. 5 See figure 13 for ..  Tags:   BSZ076N06NS3	237.21 Kb	9 Pages	Original
	First line: BSZ110N06NS3 G BSZ110N06NS3 OptiMOSTM3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant; Halogen Free Qualified according Abstract: .. Avalanche energy, single pulse5 E AS I D=20 A, R GS=25 Ω 55 mJ. Gate source voltage V GS �20 V. 2 Current is limited by bondwire; with an R thJC=2.5 K/W the chip is able to carry 53A. 5 See figure 13 for ..  Tags: BSZ110N06NS3 G   BSZ110N06NS3	237.63 Kb	9 Pages	Original
	First line: BSZ110N06NS3 OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according JEDEC1) target applications Abstract: .. Avalanche energy, single pulse5 E AS I D=20 A, R GS=25 Ω 55 mJ. Gate source voltage V GS �20 V. 2 Current is limited by bondwire; with an R thJC=2.5 K/W the chip is able to carry 50A. 5 See figure 13 for ..  Tags:   BSZ110N06NS3	499.03 Kb	9 Pages	Original
	First line: BSZ076N06NS3 OptiMOS(TM)3 Power-Transistor Features Ideal high frequency switching sync. rec. Optimized technology DC/DC converters Excellent gate charge DS(on) product (FOM) Very on-resistance DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according J Abstract: .. Avalanche energy, single pulse5 E AS I D=20 A, R GS=25 Ω 118 mJ. Gate source voltage V GS �20 V. 2 Current is limited by bondwire; with an R thJC=1.8 K/W the chip is able to carry 75A. 5 See figure 13 for ..  Tags:   BSZ076N06NS3	500.27 Kb	9 Pages	Original
	First line: Film Capacitors Power Factor Correction PhaseCap Premium capacitors Series/Type: Ordering code: Date: Version: MKK440-D-20-01 B25667C4337A375 2010 Abstract: .. Series/Type: MKK440-D-20-01 Ordering code: B25667C4337A375 B25667C4337A375 . Date: May 2010. Version: 1.  EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto ..  Tags:   MKK440-D-20-01	176.91 Kb	10 Pages	Original
	First line: Film Capacitors Power Factor Correction PhaseCap Premium capacitors Series/Type: Ordering code: Date: Version: MKK400-D-20-01 B25667C3397A375 2010 Abstract: .. Series/Type: MKK400-D-20-01 Ordering code: B25667C3397A375 B25667C3397A375 . Date: May 2010. Version: 1.  EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto ..  Tags:   MKK400-D-20-01	176.25 Kb	10 Pages	Original
	First line: Film Capacitors Power Factor Correction PhaseCap Premium capacitors Series/Type: Ordering code: Date: Version: MKK690-D-20.8-01 B25667C6137A375 2010 Abstract: .. Series/Type: MKK690-D-20.8-01 Ordering code: B25667C6137A375 B25667C6137A375 . Date: May 2010. Version: 1.  EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto ..  Tags:   MKK690-D-20	180.92 Kb	10 Pages	Original
	First line: Film Capacitors Power Factor Correction PhaseCap Premium capacitors Series/Type: Ordering code: Date: Version: MKK415-D-20.8-01 B25667C4387A375 2010 Abstract: .. Series/Type: MKK415-D-20.8-01 Ordering code: B25667C4387A375 B25667C4387A375 . Date: May 2010. Version: 1.  EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto ..  Tags:   MKK415-D-20	174.52 Kb	10 Pages	Original
	First line: Part Number: SL22 2R515 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.3 � 0.2 mm. Lead Diameter 0.8 � 0.1 mm. S 8.0 � 0.2 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags:   datasheet abstract..	98 Kb	1 Pages	Original
	First line: Charging Lithium Batteries Temperature conditions Ta=-25~75°C, Ta=-20~70°C, Ta=0~50°C, Ta=0~40°C Package Output Full charge Over voltage Output voltage detection detection Remarks voltage temperature voltage (mV) voltage conditions 4.100±0.050 8.200±0.100 12.300± Abstract: .. DW 4.200 �0.050 D 20 �3 1cell MM1333 MM1333 HW 4.100 �0.050 D 31 �5 1cell JW 4.200 �0.050 D 31 �5 1cell AV 4.100 �0.030 C 18 �5 4.35 �0.05 1cell MM1433 MM1433 BV 8.400 �0.060 C 12 �5 8.70 �0.10 2cell EV 4.200 �0.030 ..  Tags:   datasheet abstract..	23.06 Kb	1 Pages	Original
	First line: HCB1190B Type SMALL SIZE,LOW PROFILE, TYPE. MAGNETICALLY SHIELDED,SUITABLE HIGH DENSITY MOUNTING. HIGH ENERGY STORAGE DCR. PROVIDED WITH EMBOSSED CARRIER TAPE PACKING. IDEAL POWER SOURCE CIRCUITS,DC-DC CONVERTER,DC-AC INVERTERS INDUCTOR APPLICATIONS. Abstract: .. 1 .Tolerance of inductance : D 20% HCB1190B-221 HCB1190B-221 225 0.7 65 35. HCB1190B-271 HCB1190B-271 270 0.7 55 35. HCB1190B-321 HCB1190B-321 325 0.7 40 35. HCB1190B-471 HCB1190B-471 470 0.7 40 35. DCR. m MAX. Isat. Adc 3. Ir. Adc uH 12. L. 2. Isat is the ..  Tags:   HCB1190B	57.81 Kb	1 Pages	Original
	First line: inductor 2r2 HAL1345 Type profile, type. High current. Magnetic shielded. High energy storage DCR. Provided with embossed carrier tape packing. Ideal power source circuits, DC-DC converter, DC-AC inverters inductor applications. addition standard versions shown here, customized inductors available m Abstract: .. 1. Lo is the initial inductance and the tolerance of inductance is D 20% 25 , 100KHz 100KHz , 1V OC. DELTA ELECTRONICS, INC.. TAOYUAN PLANT CPBG 252,SHANGYING ROAD, GUISHAN INDUSTRIAL ZONE, TAOYUAN COUNTY ..  Tags: inductor 2r2   HAL1345	59.46 Kb	1 Pages	Original
	First line: HCB0730 Type SMALL SIZE,LOW PROFILE, TYPE. MAGNETICALLY SHIELDED,SUITABLE HIGH DENSITY MOUNTING. HIGH ENERGY STORAGE DCR. PROVIDED WITH EMBOSSED CARRIER TAPE PACKING. IDEAL POWER SOURCE CIRCUITS,DC-DC CONVERTER,DC-AC INVERTERS INDUCTOR APPLICATIONS. Abstract: .. 1 .Tolerance of inductance : D 20% DELTA ELECTRONICS, INC.. TAOYUAN PLANT CPBG 252,SHANGYING ROAD, GUISHAN INDUSTRIAL ZONE, TAOYUAN COUNTY, 33341, TAIWAN, R.O.C. TEL: 886-3-3591968; FAX ..  Tags:   HCB0730	48.78 Kb	1 Pages	Original
	First line: HAH1363 Type profile, type. High current. Magnetic shielded. High energy storage DCR. Provided with embossed carrier tape packing. Ideal power source circuits, DC-DC converter, DC-AC inverters inductor applications. addition standard versions shown here, customized inductors available meet your exac Abstract: .. 1. Lo is the initial inductance and the tolerance is D 20%. 25 , 100KHz 100KHz , 1V OC. DELTA ELECTRONICS, INC.. TAOYUAN PLANT CPBG 252,SHANGYING ROAD, GUISHAN INDUSTRIAL ZONE, TAOYUAN COUNTY, 33341 ..  Tags:   HAH1363	59.01 Kb	1 Pages	Original
	First line: 450-mil Plastic Package Code: (32-pin) Abstract: .. D 20.14 20.75 0.793 0.817. E 13.87 14.38 0.546 0.566. E1 11.18 11.43 0.440 0.450. e 1.27 BSC 0.050 BSC. L 0.58 0.99 0.023 0.039. α 0 � 10 � 0 � 10 �. S — 0.86 — 0.034. Notes: 1. Controlling dimension: inches, unless ..  Tags: issi   datasheet abstract..	15.22 Kb	1 Pages	Original
	First line: Part Number: SL22 1R020 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.5 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags: 1R020   datasheet abstract..	25.59 Kb	1 Pages	Original
	First line: Part Number: SL22 4R014 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.2 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags:   datasheet abstract..	25.63 Kb	1 Pages	Original
	First line: Part Number: SL22 5R006 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.2 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags:   datasheet abstract..	25.58 Kb	1 Pages	Original
	First line: 14005 Part Number: SL22 14005 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.2 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags: 14005   datasheet abstract..	25.56 Kb	1 Pages	Original
	First line: Part Number: SL22 12102 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.2 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags:   datasheet abstract..	25.54 Kb	1 Pages	Original
	First line: Part Number: SL22 2R508 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.2 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags:   datasheet abstract..	25.46 Kb	1 Pages	Original
	First line: Part Number: SL22 22102 Inside Kinked Leads Outside Kinked Leads after Ametherm's part after Ametherm's part Abstract: .. D 20.0 � 1.0 mm. T 5.0 � 0.2 mm. Lead Diameter 1.0 � 0.1 mm. S 7.8 � 2.0 mm. L 38.0 � 9.0 mm. Straight Leads ..  Tags:   datasheet abstract..	25.54 Kb	1 Pages	Original
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