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1-87879-1 TE Connectivity Ltd 16 MODIV VRT SR OE 100/115 visit Digikey
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

D 1878 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

D 1878 TRANSISTOR

Abstract: Sensor* spx Number SPX 1872 SPX 1873 SPX 1874 SPX 1878 SPX 1879 SPX 2762 SPX 2862 -1 200 200 200 N.A. N.A. 100 200 , 600 600 600 1000 (d) N.A. N.A. Plastic -13(a) 2000 2000 2000 2000 N.A. N.A. N.A. Plastic -14 3000 , 10V See page 8 for outline dimensions (a) Photodariington (d) lF = 10 mA, VCE = 5V (b) Specify SPX , ; Collector, Yellow; Emitter, D. LED: Black = (Neg.); Red = (Pos.) Black Black Black LED , supplied with lead 2 omitted. 3. For transistor and darlington: 1 Emitter 2 Collector on 2 pin packages
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D 1878 TRANSISTOR

Abstract: . UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 · · · · D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102 80 W at 25°C C ase , This rating is based on the capability of the transistor to operate safely in a circuit of: L » 20 mH , - INNOVATIONS r ,fj 3*115 TIP1Q5, HP106, TIP107 PNP SILICON POWER DARL1NGTONS A U G U ST 1878 - R E V IS E D M A R C H 1997 electrical characteristics at 25°C case temperature PARAM ETER
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D 1878 TRANSISTOR TIP106 T1P105 TIP105 TP105

BOW83

Abstract: BOW83C Innovations Limited. UK AUGUST 1878 - REVISED MARCH 1997 · Designed for Complementary Use with BDW84 , at the rate of 28 mW/°C. This rating fe based on the capability of the transistor to operate safely , dc < 2% * Voltage and current values shown are nominal; exact values vary slightly wilh transistor , COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT - Typical D C Currant Gain le - Collector , ._ THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T I S I d f lA B Tc - C m * Tem
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BDW83B BOW83C BOW83 bdw83a TRANSISTOR Bdw83d BDW83 BDW83A BDW83C BDW83D BDW84A

BDW740

Abstract: BDW748 temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate , SILICON POWER DARLINGTONS A U G U ST 1878 - REVISED M A RCH 1997 electrical characteristics at 25 , "C/W D C/W reslstive-load-switching characteristics at 25°C case temperature PAR AM ETER top , M S, d C < 2 % * Voltage and current values shown ara nominal; exact values vary slightly with transistor parameters. BDW74, BDW74A, BDW74B, BOW74C, BDW74D PNP SILICON POWER DARLINGTONS AUG UST 1978
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BDW740 BDW748 B0W74B BDW73 BDW73A BDW73B BDW73C BDW73D BDW74C

MRF914

Abstract: MO T O R O L A SC ( X S T R S / R F) MbE D b3b72Sil GQTM'iMM S noTb SEMICONDUCTOR , TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for applications requiring high-gain , Vdc Vdc Vdc mAdc mW m W/°C °C -*4 U -d suim / mm > rE i p / ' T -F t * r s- t t v Eao 'c Pd , -72 OUTLINE SHALL APPLY M t UN CTEtt OM A S C D E MAX 564 495 533 053 0.76 041 0.46 2 54 BSC 117 091 071 122 , 18.78 6.05 11.46 15.45 18.35 19.12 100 L0 150 135 125 115 110 150 135 127 120 115 S21 4.06 5.91 6.78
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MRF914

NTE184

Abstract: with the NTE1845 for video chroma deflection use and the NTE1538 for deflection use. Features: D High Output D On­Chip Pump­Up Circuit and Low Power Dissipation D Minimum Number of External Parts Required , otherwise specified) Parameter Output Transistor Saturation Voltage Pin7 Saturation Voltage Quiescent , V V V V mA V 1.062 (27.0) .788 (20.0) .156 (3.95) R .157 (4.0) .448 (11.4) 1 10 .740 (18.78
NTE Electronics
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NTE184 NTE1797

D 1878 TRANSISTOR

Abstract: NTE184 : D High Output D On­Chip Pump­Up Circuit and Low Power Dissipation D Minimum Number of External , Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Output Transistor Saturation , ) R .157 (4.0) .448 (11.4) 1 10 .740 (18.78) .100 (2.54) .016 (0.40) NTE
NTE Electronics
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color tv diagram vertical tv deflexion colour tv circuit diagram

transistor 9163

Abstract: transistor EM 9163 -8 hermetic case or connectored TC-1 package. Description Ih. ÜB rf°ut (S e e S ectio n 5 for d e ta iled case d raw in g s.) Schematic Maximum Ratings Parameter DC Voltage Continuous RF , ) UTO-2.1 grams; UTC-21.5 grams 596IÌ-2447E 105°C/W e.,r Active Transistor Power Dissipation 126 , ¡1 4 D > S z 300 600 900 1200 1500 1800 2100 $2 0 300 600 900 1200 1500 , 19.50 19.23 18.93 18.78 18.67 18.82 - S 21 S-Parameters FREQUENCY MHz 100.00 200.00 300.00
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transistor 9163 transistor EM 9163 UTC--21 MIL-HDBK-217E

Transistor MP 1715

Abstract: transistor EM 9163 T h o t m L /Ü MP A C K A R D HEWLETT Avantek Products Thin-Film Cascadable Amplifier , _ |§ " 'O U T . . (S e e S e c lio n 5 fo r d r ia i le d c a s e d ra w in g s . , +150°C +125°C Thermal Characteristics1 e>, Active Transistor Power Dissipation Junction Tem perature , Frequency, MHz Frequency, MHz P o w e r O u tp u t E C D In p u t V S W R O u tp u t V S W R , 19.41 19.61 19.81 20.01 20.08 19.97 19.77 19.50 19.23 18.93 18.78 19.67 18.82 B ias = 15.00 Volts S
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Transistor MP 1715
Abstract: Â¥hl¡% H E W LE T T mL'nM P a c k a r d Avantek Products Thin-Film Cascadable Amplifier 2 to 1000 MHz Technical Data UTO/UTC 1011 Series Features Description Pin , ®JC Active Transistor Power Dissipation 44 mW Junction Temperature Above Case Temperature 5 , * 21 e 0 o C 5 D 5^ a Frequency, MHz 44475Ã4 00107*13 Tbfl 1-199 1000 1200 , 1.97 18.82 1.95 1.91 18.78 1.82 18.77 18.77 1.70 18.85 1.59 1.44 18.98 19.29 1.31 1.24 -
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5963-2453E

U893BS

Abstract: U832BS for mobile application. Features D U832BS divides by 2 D Very low current consumption (typically 12 mA) D 3-GHz maximum operating frequency D Supply voltage, typically 5 V D ESD protection in accordance with MIL-STD. 883 method 3015 class 2 Benefits D Extended operation time due to very low current consumption D Only three external components D Low RF input level reduces radiation problems , 1878 1680 1087 1483 1285 693 890 3458 1 10 0 ­0.2j ­5j ­0.5j ­2j 93 7812 e ­j
Temic Semiconductors
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U893BS 7812 AA U893BSE u893 PF2470 U832BS-FP 88/540/EEC 91/690/EEC D-74025
Abstract: MOSFET Power Transistor 175MHz,520MHz,7.2V,2W I s (A) d RD02MUS1 Vds-Ids characteristics & W , /Dec.â'™02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for , r a d i o s e ts ABSjjLUTE MAXIMUM RATINGS (Tc=4llfg.C UNLESS OTHE SYMBOL VDSS VGSS Pin Pch , Transistor 175MHz,520MHz,7.2V,2W >TYPICALCHARACTERISTICS(175MHz) RD02MUS1 P in -P o u t characteristics -
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175MH 520MH
Abstract: A V A N T Ã' K MME IN C D B i m n b h 0 0 0 0 1 1 3 3 E 3 A V A UTO , TC-1 package. (Measured In a 50-ohm system +15 V D C nominal unless otherwise noted , 1800 2000 2200 Frequency, MHz Th e r m a l MAXIMUM RATINGS D C V o lta g e . , 0 . 105â'C/W Aotive Transistor Power Dissipation . 130 mW , 20.62 -20.39 19.91 19.44 19.06 18.79 18.68 18.78 19.11 19.83 UNÃ'ARIZATION RANGE: 1700 to -
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Abstract: AVANTEK INC MME llMlTbb GODfitm 2 B A V A D UTO/UTC 2031 Series Thln-FIlm Cascadable , SPECIFICATIONS . . IPs lo D "â  Â« i U TC â'" TC-1, p. 1S-42 (Measuredin a SO-ohm system @ ,   â'" NF Pi d B - nal blocking capacitors couple the RF through the amplifier. The 2031 , (MIL-HDBK-217E, Auf @ 90°C) . . 685,900 Hrs, Active Transistor Power Dissipation , , UiUnfli ar* In ft* back of (hit Data Book. 3 -17 8 AVANTÉK INC MME llMlTt.b D D00à -
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U832BS

Abstract: D 1878 TRANSISTOR suitable for mobile application. Features Benefits D U832BS divides by 2 D Extended operation time due to very low current consumption D Very low current consumption (typically 12 mA) D Only three external components D Low RF input level reduces radiation problems D 3-GHz maximum operating frequency D Supply voltage, typically 5 V D ESD protection in accordance with MIL-STD. 883 method 3015 , 2667 495 2470 ­0.2j 693 2273 2075 ­5j 890 1878 1680 ­0.5j 1087 1483 1285
Temic Semiconductors
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U832 RFDC

TRANSISTOR B 834

Abstract: D 1878 TRANSISTOR . D U 832 BS divides by 2 Benefits D U 834 BS divides by 4 D Extended operation time due to very low current consumption D Very low current consumption (typically 12 mA) D Only three external components D 3-GHz maximum operating frequency D Low RF input level reduces radiation problems D Supply voltage, typically 5 V D ESD protection in accordance with MIL-STD. 883 method 3015 , 693 2273 2075 ­5j 890 1878 1680 ­0.5j 1087 1483 1285 ­2j 93 7812 e ­j
Temic Semiconductors
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U834BS TRANSISTOR B 834 7812 pin out Transistor 834 Telefunken u 690 7812 MAX INPUT VOLTAGE

U891BS

Abstract: 1878 TRANSISTOR makes the device suitable for mobile application. D U832BS divides by 2 Benefits D U834BS divides by 4 D Extended operation time due to very low current D Very low current consumption (typically 12 mA) D Only three external components D Low RF input level reduces radiation problems consumption D 3-GHz maximum operating frequency D Supply voltage, typically 5 V D ESD protection in , 5 2865 10 0 297 2667 495 2470 ­0.2j 693 2273 2075 ­5j 890 1878
Temic Semiconductors
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U834BS-FP U891BS 1878 TRANSISTOR U891 TRANSISTOR 7812 7812 ACT datasheet RS 7812

9494 transistor

Abstract: W h a t HEW LETT mÜKM P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 1700 to , Medium Gain: 10.5 dB (T yp) · Low VSWR · T em perature C om pensated D escription The 2302 Series is , aracteristics1 S.« Act ive Transistor Pow er Dissipation Junction Tem perature Above Case Temperature MTBF , *·+12 V D C a n d +15 V D C 1800 2000 2200 X 1900 2100 Fre que ncy, MHz F re q u e n cy, MHz , 1.13 18.79 18.68 1.07 1.19 18.78 19.11 1.39 1.65 19.83 1 Linearization Range: 1700 to 2300 MHz
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9494 transistor MIL-IIDBK-217E 5963-2442E

LT 6724

Abstract: D 1878 TRANSISTOR MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters · Suitable for , Figure SYM BO L B V d SX *DSS v G lS lo ff| v G 2S (off) 'G1SS 'G2SS !Vfs! c il* Coss Crss G p *' NF* 16 , NS V G1S " V G 2S " ~ 2 'D " *0 is mA V q s * 5 V , V q 2S * 4 V , V q V q s - 10 v - V G 2 S " 4 , V o s * 0« V G 2 S * * 8 V , V q i s " 0 V q s = 5 V , VQ2S * 4 V , I d " 10 mA f - 1 kH ? IE
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LT 6724 transistor 1758 si2502

NEC 41-A 002

Abstract: 8085 based traffic control system DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES · · · · Suitable for use as RF , * U66 1 to 6 Class Marking Id s s * Old specification/New specification D ocu m e n t No. P 1 0 4 1 1 EJ1VODSOO (1 si e d itio n ) (P re v io u s No. T N -1 7 5 8 ) D ale P u b lish e d A u g u , . OUTPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE V ds = 10 V f = 1 MHz c d Q. c d O "5 _C Q. Id =
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NEC 41-A 002 8085 based traffic control system
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