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| Abstract: POWEREX INC -WíTpámsi 00DSDS8 00DSDS8 1 |~3 D T'i^^ mNHÌEX KS534505 KS534505 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 1S697 (412) 925-7272 Sitiglß BípOldt Transistor Module 50 Amperes/600 Amperes/600 Volts OUTLINE ORAWING E 600 Volt KS534505 KS534505 Outline Drawing Dimension Inches Millimeters A 2.106 53.5 B 1.705 ±.008 43.3 ±0.2 C 1.437 36.5 D 1.299 33 E .925 23.5 F .866 22 G .551 14 H .354 9 J .315 8 K .276 7 L .472 R R6 M .209 5.3 N .209 Dia. 5.3 Dia. P .177 4.5 Q .138 3.5 R M4 Metrie M4 KS534505 KS534505 Single Bipolar Transistor Module 50 ... | OCR Scan |
4 pages, |
00DSDS8 Bipolar switching transistor VCBO D 1437 transistor bipolar transistor KS534505 1S697 Amperes/600 00DSDS8 abstract |
| Abstract: ±.008 43.3 ±0.2 C 1.437 36.5 D 1.299 33 E .925 23.5 F .866 22 G .551 14 H .354 9 J .315 8 K .276 , POWEREX INC -WíTpámsi 00DSDS8 00DSDS8 1 |~3 D T'i^^ mNHÌEX KS534505 KS534505 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 1S697 (412) 925-7272 Sitiglß BípOldt Transistor Module 50 Amperes/600 Amperes/600 Volts , Single Bipolar Transistor Module 50 Amperes/600 Amperes/600 Volts Description Powerex Single Bipolar Transistor , Bipolar Transistor having a reverse parallel connected high-speed diode. Features: - Isolated Mounting ... | OCR Scan |
4 pages, |
KS534505 KS53 7214F 1S697 D 1437 transistor 10A 600 VOLT DIODE 00DSDS8 Amperes/600 00DSDS8 abstract |
| Abstract: Preliminary 10W Power Transistor RT240PD RT240PD Dimension in mm F 1 D B RT240PD RT240PD K045101 K045101 2-E , Preliminary 10W Power Transistor RT240PD RT240PD Product Features Application · High Output , specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor RT240PD RT240PD , Transistor RT240PD RT240PD Test Circuit Board All specifications may change without notice. www.rfhic.com Preliminary 10W Power Transistor RT240PD RT240PD Measure Data ( 900MHz ) ( S-Parameter ) ( CDMA 1FA 33dBm ... | Original |
10 pages, |
z3 transistor C 2640 rf transistor era-4 TRANSISTOR Z10 transistor tc 144 IMT-2000 RF Transistor s-parameter RT240 RT240PD gsm wcdma repeater transistor Z2 1608 B 100NF transistor z9 RT240PD abstract |
| Abstract: 1.437 36.5 D 1.299 33 E 0.925 23.5 F 0.866 22 G 0.551 14 H 0.354 9 Dimensions Inches Millimeters J 0.315 , Singie Darlington Transistor Module 30 Amperes/600 Amperes/600 Volts OUTLINE DRAWING lB- 1-T-G-1- N - DIA. R - M4 THD (3 TYP.) A I Â- -ÁE \ \ n X M (3 TYP.) I2TYP.) Q 1 E --D-- h-I o 1 TT TT CONNECTION DIAGRAM C o Bo- , Metric M4 Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor ... | OCR Scan |
4 pages, |
transistor 600 volts 60 amperes KS524503 Amperes/600 KS524503 abstract |
| Abstract: 2.106 53.5 B 1.705 ± 0.008 43.3 ± 0.02 C 1.437 36.5 D 1.299 33 E 0.925 23.5 F 0.866 22 G 0.551 14 , s/ng/e Darlington Transistor Module 30 Amperes/600 Amperes/600 Volts OUTLINE DRAWING lB- 1-T-G-1- N - DIA. R - M4 THD (3 TYP.) A I Â- -ÁE \ \ n X M (3 TYP.) I2TYP.) Q 1 E --D-- h-I o 1 , Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected highspeed ... | OCR Scan |
4 pages, |
KS524503 KS52 1256C Amperes/600 KS524503 abstract |
| Abstract: 0.02 K 0.276 7 C 1.437 36.5 L 0.236 Rad. 6 Rad. D 1.299 33 M 0.209 5.3 E 0.925 23.5 N 0.209 Dia. 5.3 , SiflQlG DdrHflQtOn Transistor Module 75 Amperes/600 Amperes/600 Volts OUTLINE DRAWING C o " E Outline Drawing , Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected , (412) 925-7272 KS524575 KS524575 Single Darlington Transistor Module 75 Amperes/600 Amperes/600 Volts Absolute Maximum ... | OCR Scan |
4 pages, |
KS524575 Amperes/600 KS524575 abstract |
| Abstract: 0.02 K 0.276 7 C 1.437 36.5 L 0.236 Rad. 6 Rad. D 1.299 33 M 0.209 5.3 E 0.925 23.5 N 0.209 Dia. 5.3 , Single DsrHngtOfl Transistor Module 50 Amperes/600 Amperes/600 Volts OUTLINE DRAWING C Q " E Outline Drawing , Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected , 15697-1800 (412) 925-7272 KS524505 KS524505 Single Darlington Transistor Module 50 Amperes/600 Amperes/600 Volts Absolute Maximum ... | OCR Scan |
4 pages, |
young ks524505 KS524505 Amperes/600 KS524505 abstract |
| Abstract: 0.008 43.3 ± 0.02 K 0.276 7 C 1.437 36.5 L 0.236 Rad. 6 Rad. D 1.299 33 M 0.209 5.3 E 0.925 23.5 N , ) 925-7272 SiflQlG DdrHflQtOn Transistor Module 75 Amperes/600 Amperes/600 Volts OUTLINE DRAWING C o " E Outline , Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse , , Pennsylvania 15697-1800 (412) 925-7272 KS524575 KS524575 Single Darlington Transistor Module 75 Amperes/600 Amperes/600 Volts ... | OCR Scan |
4 pages, |
S-20 S-17 KS524575 KS52 1B2 diode Diode S17 Amperes/600 KS524575 abstract |
| Abstract: 0.008 43.3 ± 0.02 K 0.276 7 C 1.437 36.5 L 0.236 Rad. 6 Rad. D 1.299 33 M 0.209 5.3 E 0.925 23.5 N , ) 925-7272 Single DsrHngtOfl Transistor Module 50 Amperes/600 Amperes/600 Volts OUTLINE DRAWING C Q " E Outline , Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in switching applications. The modules are isolated, consisting of one Darlington Transistor with a reverse , , Youngwood, Pennsylvania 15697-1800 (412) 925-7272 KS524505 KS524505 Single Darlington Transistor Module 50 Amperes ... | OCR Scan |
4 pages, |
S-12 S-11 S-10 KS524505 KS52 bsk 45 Amperes/600 KS524505 abstract |
| Abstract: 2.106 53.5 J 0.315 8 B 1.705 ±0.008 43.3 ± 0.02 K 0.276 7 C 1.437 36.5 L 0.236 Rad. 6 Rad. D 1.299 33 , Darlington Transistor Module 50 Amperes/600 Amperes/600 Volts OUTLINE DRAWING h R - M4 THD (3 TYP.) CONNECTION , 0.354 9 R M4 Metrie M4 Description: The Powerex Single Darlington Transistor Modules are high power , Transistor with a reverse parallel connected highspeed diode and base-to-emitter speed-up diode. Features , Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 KS524505 KS524505 Single Darlington Transistor ... | OCR Scan |
4 pages, |
S-12 S-11 S-10 KS524505 KS52 TIS25 Amperes/600 KS524505 abstract |
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| . CLASS A LINEAR OPERATION . P OUT = 2 W MIN. WITH 8.5 dB GAIN DESCRIPTION The SD1437 is a ST | RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz Datasheet RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz SD1437 Document Format Size Document Number Date Update /07/1995 3 Raw Text Format RF & MICROWAVE TRANSISTORS UHF TV www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2803-v3.htm |
STMicroelectronics | 25/05/2000 | 5.61 Kb | HTM | 2803-v3.htm |
| ST | RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz Datasheet RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .280 4L STUD (M122) epoxy sealed . 860 MHz . COMMON EMITTER . GOLD METALLIZATION . CLASS A LINEAR OPERATION . P OUT = 2 W MIN. WITH 8.5 dB GAIN DESCRIPTION The SD1437 is a silicon NPN bipolar device spe- cifically designed for high www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2803.htm |
STMicroelectronics | 20/10/2000 | 5.9 Kb | HTM | 2803.htm |
| ST | RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz Document Number: 2803 Date Update OPERATION . P OUT = 2 W MIN. WITH 8.5 dB GAIN DESCRIPTION The SD1437 is a silicon NPN bipolar device spe Document Format and Raw Text Format RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .280 - eration. PIN CONNECTION BRANDING TCC593 TCC593 TCC593 TCC593 ORDER CODE SD1437 ABSOLUTE MAXIMUM RATINGS (T case = 25 5 C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2803-v1.htm |
STMicroelectronics | 02/04/1999 | 3.81 Kb | HTM | 2803-v1.htm |
| ST | RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz Document Number: 2803 Date Update OPERATION . P OUT = 2 W MIN. WITH 8.5 dB GAIN DESCRIPTION The SD1437 is a silicon NPN bipolar device spe Document Format and Raw Text Format RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .280 - eration. PIN CONNECTION BRANDING TCC593 TCC593 TCC593 TCC593 ORDER CODE SD1437 ABSOLUTE MAXIMUM RATINGS (T case = 25 5 C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2803-v2.htm |
STMicroelectronics | 14/06/1999 | 3.77 Kb | HTM | 2803-v2.htm |
| * * * * PBSS4560PA PBSS4560PA PBSS4560PA PBSS4560PA * * NXP Semiconductors * * Low VCEsat NPN BISS transistor * IC = 6 A * VCEO = 60 V * hFE = typ. 325 @ 2V/2A * * *# .SUBCKT PBSS4560PA PBSS4560PA PBSS4560PA PBSS4560PA 1 2 3 * Q1 1 2 3 PBSS4560PA PBSS4560PA PBSS4560PA PBSS4560PA D1 2 1 DIODE * * Diode D1 is dedicated to improve + IS = 1.437E-012 + NF = 0.956 + ISE = 5.283E-014 283E-014 283E-014 283E-014 + NE = 1.354 + BF = 513 + IKF = 3 + TR = 6E-009 6E-009 6E-009 6E-009 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.98 .MODEL DIODE D + IS = 1.513E www.datasheetarchive.com/download/28222960-596966ZC/41781.zip (PBSS4560PA.prm) |
NXP | 23/10/2012 | 188.74 Kb | ZIP | 41781.zip |
| 387 Datasheets SD1434 SD1434 SD1434 SD1434 UHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS 5 387 Datasheets SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 860MHz 4 387 Datasheets SD1439 SD1439 SD1439 SD1439 UHF TV/LINEAR APPLICIONS RF & MICROWAVE TRANSISTORS 4 387 Datasheets SD1433 SD1433 SD1433 SD1433 UHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS 5 387 Datasheets BUL1403ED BUL1403ED BUL1403ED BUL1403ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 6 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/819.htm |
STMicroelectronics | 31/03/1999 | 21.52 Kb | HTM | 819.htm |
| # GHz S MA R 50 ! 17 Sep 1992 / 11:34:05 !BF777W BF777W BF777W BF777W, Si-NPN RF-Transistor in SOT323 ! VCE= 10.00V, IC= 2.00mA !f GHZ S11 S21 -9.0 .150 .82412 -43.5 5.7943 143.7 .04084 66.9 .92464 -12.4 .200 .75790 -55 .7 .71832 -26.5 .900 .39863 -137.3 1.9040 74.5 .10617 49.9 .71279 -28.2 1.000 .39655 -143.7 ! Balanstr. 73, D-W8000 Muenchen 80, Federal Republic of Germany www.datasheetarchive.com/files/siemens/ehdata/spar/bf777w/w810v2m0.s2p |
Siemens | 17/09/1992 | 2.01 Kb | S2P | w810v2m0.s2p |
| # GHz S MA R 50 ! 22 May 1991 / 12:04:19 !BFP194 BFP194 BFP194 BFP194, Si-NPN RF-Transistor in SOT143 ! VCE=-10.00V, IC=-20.00mA !f GHZ S11 S21 .9 .26378 -143.7 .800 .76619 168.2 2.7660 70.2 .07159 52.5 .26521 -146.4 .900 .77208 165 .2 .30769 -156.4 1.600 .78305 148.2 1.4131 45.9 .12448 55.0 .31474 -157.2 1.800 .79242 143.7 .4 ! ! SIEMENS AG Semiconductor Group ! Balanstr. 73, D-W8000 Muenchen 80, Federal Republic of Germany www.datasheetarchive.com/files/siemens/ehdata/spar/bfp194/pg10v20m.s2p |
Siemens | 03/07/1992 | 1.94 Kb | S2P | pg10v20m.s2p |
| TRANSISTORS 5 387 Datasheets SD1437 RF & MICROWAVE TRANSISTORS UHF TV COMPLEMENTARY SILICON POWER TRANSISTORS 6 419 Datasheets TIP31A TIP31A TIP31A TIP31A TIP31C TIP31C TIP31C TIP31C TIP32A TIP32A TIP32A TIP32A TIP32B TIP32B TIP32B TIP32B TIP32C TIP32C TIP32C TIP32C COMPLEMENTARY SILICON POWER TRANSISTORS 6 419 Datasheets M28W431 M28W431 M28W431 M28W431 4 MBIT (512KB 512KB 512KB 512KB X8, BOOT TRANSISTORS 4 387 Datasheets SD1433 SD1433 SD1433 SD1433 UHF MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS 5 387 Datasheets L4931ABD12 L4931ABD12 L4931ABD12 L4931ABD12 L4931ABD120 L4931ABD120 L4931ABD120 L4931ABD120 L4931ABD15 L4931ABD15 L4931ABD15 L4931ABD15 L4931ABD27 L4931ABD27 L4931ABD27 L4931ABD27 L4931ABD30 L4931ABD30 L4931ABD30 L4931ABD30 L4931 L4931 L4931 L4931 www.datasheetarchive.com/files/stmicroelectronics/stonline/pnsearch/static/818.htm |
STMicroelectronics | 31/03/1999 | 25.93 Kb | HTM | 818.htm |
| ! BFR181 BFR181 BFR181 BFR181 , Si-NPN RF-Transistor in SOT23 ! VCE= 2.50V, IC= 15.00mA ! # GHz S MA R 50 ! ! f S11 S21 S12 S22 ! GHz Mag Ang .1395 93.5 .0538 71.1 .5812 -18.3 .700 .1900 -143.7 5.3278 89.6 .0612 72 .3618 63.4 .1395 73.0 .5433 -26.6 1.750 .1928 144.1 2.2935 62.4 .1437 73 .6 .5000 -44.2 ! ! SIEMENS AG SEMICONDUCTOR GROUP ! Balanstr. 73, D-8000 Munich 80, Federal www.datasheetarchive.com/files/siemens/ehdata/spar/bfr181/r32v515m.s2p |
Siemens | 02/07/1993 | 2.67 Kb | S2P | r32v515m.s2p |