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Comset Datasheet

Part Manufacturer Description PDF Type
180T2 Comset Semiconductors 60V NPN silicon transistot, diffused mesa Original
181T2 Comset Semiconductors 90V NPN silicon transistot, diffused mesa Original
182T2 Comset Semiconductors 140V NPN silicon transistot, diffused mesa Original
183T2 Comset Semiconductors 180V NPN silicon transistot, diffused mesa Original
184T2 Comset Semiconductors 200V NPN silicon transistot, diffused mesa Original
185T2 Comset Semiconductors 250V NPN silicon transistot, diffused mesa Original
185T2A Comset Semiconductors NPN SILICON TRANSISTORS, DIFFUSED MESA Original
185T2B Comset Semiconductors NPN SILICON TRANSISTORS, DIFFUSED MESA Original
185T2C Comset Semiconductors NPN SILICON TRANSISTORS, DIFFUSED MESA Original
2N1595 Comset Semiconductors Silicon Thyristor Original
2N1596 Comset Semiconductors Silicon Thyristor Original
2N1597 Comset Semiconductors Silicon Thyristor Original
2N1598 Comset Semiconductors Silicon Thyristors Original
2N1599 Comset Semiconductors Silicon Thyristor Original
2N1671 Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original
2N1671A Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original
2N1671B Comset Semiconductors PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS Original
2N2322 Comset Semiconductors Silicon Thyristor Original
2N2323 Comset Semiconductors Silicon Thyristors Original
2N2324 Comset Semiconductors Silicon Thyristors Original
Showing first 20 results.

Comset

Catalog Datasheet MFG & Type PDF Document Tags

BDX62A

Abstract: BDX62B BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A , VCEO(SUS) -60 -80 - V IC=-0.1 A, IB=0, L=25mH BDX62B - - BDX62C COMSET , =-80 V TCASE=150°C VCBO=-100 V COMSET SEMICONDUCTORS BDX62B 3/5 - BDX 62, A, B, C , circuit COMSET SEMICONDUCTORS 4/5 - BDX 62, A, B, C MECHANICAL DATA CASE TO-3 DIMENSIONS A , 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 5/5 Comset Semiconductors
Comset Semiconductors
Original
BDX62 Fh21e

transistor bd650

Abstract: BD648 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 COMSET SEMICONDUCTORS Unit 60 80 100 , Value BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 COMSET SEMICONDUCTORS , VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=120 mA COMSET SEMICONDUCTORS - , Unit 2.5 2.5 2.5 2.5 2.5 - (*) Pulse Width 300 µs, Duty Cycle 2.0% COMSET SEMICONDUCTORS , 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate COMSET
Comset Semiconductors
Original
transistor bd650 IC 651 BD643/645/647/649/651 BD643/645/647/649/6

BDX64

Abstract: BDX64A COMSET SEMICONDUCTORS Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -12 , Resistance, Junction to Case Value BDX64 BDX64A BDX64B BDX64C COMSET SEMICONDUCTORS Unit 1.5 , BDX64B mA COMSET SEMICONDUCTORS 3/5 BDX 64, A, B, C Symbol Ratings Test Condition(s , =-5.0 A, VCE=-3V VCE=3 V, IC=5 A COMSET SEMICONDUCTORS BDX64 BDX64A BDX64B BDX64C BDX64 , Collector Emitter COMSET SEMICONDUCTORS 5/5 MHz - Comset Semiconductors
Comset Semiconductors
Original
DSA0082168

BDX66C

Abstract: BDX66B BDX66A BDX66 BDX66A BDX66B BDX66C -IB @ TC = 25° COMSET SEMICONDUCTORS 1/4 BDX 66, A, B, C THERMAL , Collector Cutoff Current 3 -VCE=50 V BDX66B - - -VCE=60 V BDX66C - - COMSET , - 1 - µs COMSET SEMICONDUCTORS 3/4 BDX66B BDX66C toff 3.5 - - BDX , 0,04 0,16 Base Emitter Collector COMSET SEMICONDUCTORS 4/4 kHz Comset
Comset Semiconductors
Original
BDX66 BDX66B BDX66A BDX66 BDX 66 A

Triac

Abstract: BTB04-600SL ITSM 2 It dl/dt 06/01/2014 COMSET SEMICONDUCTORS V A A 1|3 SEMICONDUCTORS , referenced to A1. 06/01/2014 COMSET SEMICONDUCTORS 2|3 SEMICONDUCTORS BTB04-600SL MECHANICAL ,             Information furnished is believed to be accurate and reliable. However, Comset , change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any
Comset Semiconductors
Original
Triac

BDX18

Abstract: BDX18N +200 °C RBE=100 VBE=+1.5 V @ TC = 25° COMSET SEMICONDUCTORS BDX18 BDX18N -100 , BDX18 BDX18N - 4 - MHz IC=-4.0 A, VCE=-4.0V IC =-1A, VCE=-10 V, f=1 MHz COMSET , ,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 3/3 - Comset Semiconductors
Comset Semiconductors
Original

BU2508AF

Abstract: transistor bu2508af Symbol Rth j-c 21/12/2009 Ratings Thermal Resistance,Junction to Case COMSET SEMICONDUCTORS , Time 21/12/2009 COMSET SEMICONDUCTORS 2/4 NPN BU2508AF 21/12/2009 COMSET , . Data are subject to change without notice. 21/12/2009 COMSET SEMICONDUCTORS 4/4 Comset
Comset Semiconductors
Original
transistor bu2508af bu2508af equivalent

BD142

Abstract: Comset Semiconductors @ TC = 25° Storage Temperature COMSET SEMICONDUCTORS 1/3 BD142 THERMAL CHARACTERISTICS , COMSET SEMICONDUCTORS 2/3 BD142 Symbol Ratings Test Condition(s) Second Breakdown , Collector COMSET SEMICONDUCTORS 3/3 Comset Semiconductors
Comset Semiconductors
Original
Comset Semiconductors

tip147

Abstract: TIP146 TIP146 TIP147 TIP145 TIP146 TIP147 COMSET SEMICONDUCTORS Value Unit -60 -80 -100 -60 , 1.5% COMSET SEMICONDUCTORS 2/3 TIP145, TIP146, TIP147 MECHANICAL DATA CASE TO-3PN (SOT93 , notice COMSET SEMICONDUCTORS 3/3 Comset Semiconductors
Comset Semiconductors
Original
TIP140 TIP141 TIP142 tip147 transistor tip142 tip147

BDX62

Abstract: BDX62B BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A , VCEO(SUS) -60 -80 - V IC=-0.1 A, IB=0, L=25mH BDX62B - - BDX62C COMSET , =150°C VCBO=-100 V COMSET SEMICONDUCTORS BDX62B 3/5 - BDX 62, A, B, C Symbol Ratings , % (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET , Emitter COMSET SEMICONDUCTORS 5/5 Comset Semiconductors
Comset Semiconductors
Original
62AB

BDX33C

Abstract: BDX34C Collector-Emitter Voltage Collector-EmitterVoltage COMSET SEMICONDUCTORS IB=0 Value BDX33 BDX34 , Temperature COMSET SEMICONDUCTORS @ TC = 25° Value BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A , (*) COMSET SEMICONDUCTORS BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - 100 - , Current TCASE=25°C VCBO=-45 V VCBO=-60 V VCBO=-80 V VCBO=100 V COMSET SEMICONDUCTORS 45 , voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS - 5/6 - -
Comset Semiconductors
Original
BDX34C bdx33c datasheet SILICON COMPLEMENTARY transistors darlington Comset BDX34B W

BDX35

Abstract: BDX36 BDX35 BDX36 BDX37 COMSET SEMICONDUCTORS 5 V Value Ratings IC(RMS) IC Value , , IB=1A hFE * DC Current Gain (*) VCE=10 V, IC=500m A COMSET SEMICONDUCTORS Min Typ , Collector Base COMSET SEMICONDUCTORS 3 NPN BDX35 ­ BDX36 ­ BDX37 * COMSET SEMICONDUCTORS 4 Comset Semiconductors
Comset Semiconductors
Original

BU2508AF

Abstract: bu2508af equivalent Symbol Rth j-c 06/07/2007 25/06/2010 Ratings Thermal Resistance,Junction to Case COMSET , /2007 25/06/2010 COMSET SEMICONDUCTORS 2/4 NPN BU2508AF 06/07/2007 25/06/2010 COMSET , appear. Data are subject to change without notice. 06/07/2007 25/06/2010 COMSET SEMICONDUCTORS 4/4 Comset Semiconductors
Comset Semiconductors
Original

BD675-BD677-BD679-BD681

Abstract: BD676-BD678-BD680-BD682 Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value Unit 3.12 100 , decreases by about 3,6 mV/K with increasing temperature. COMSET SEMICONDUCTORS M Unit x mA 2 , Collector Base COMSET SEMICONDUCTORS 3 COMSET SEMICONDUCTORS 4 Comset Semiconductors
Comset Semiconductors
Original
BD675-BD677-BD679-BD681 BD676-BD678-BD680-BD682 BD675 BD677 BD679 BD681 bd679 PNP transistor BD677 transistor

BDV65

Abstract: BDV65B BDV65C COMSET SEMICONDUCTORS Value Unit 60 80 100 120 60 80 100 120 V V 5.0 , Collector-Base Cutoff Current Tj=150°C, VCB= ½ VCBO COMSET SEMICONDUCTORS 0.2 mA 5.0 mA 0.4 , % COMSET SEMICONDUCTORS - - 3/4 pF µs kHz BDV65A, B, C MECHANICAL DATA CASE TO , information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4 Comset Semiconductors
Comset Semiconductors
Original
BDV65 BDV64A BDV65B transistors BDV65c

BD203

Abstract: BD201 , Junction to ambient in free air COMSET SEMICONDUCTORS Value BD201 BD203 BD201 BD203 Unit , 1 - - 4 µs (1) Pulse conditions : tp < 300 µs, =2% COMSET SEMICONDUCTORS V , notice. COMSET SEMICONDUCTORS 3/3 Comset Semiconductors
Comset Semiconductors
Original
BD202 BD204 BD203 npn IC03 Ratings vce-20 NPN pnp MATCHED PAIRS

2N5672

Abstract: 2N5671 Resistance, Junction to Case COMSET SEMICONDUCTORS Value 2N5671 2N5672 Unit 1.25 °C/W 1/3 , Width 300 µs, Duty Cycle =1.5% (2) Pulsed : 1 s, non repetitive pulse COMSET SEMICONDUCTORS V , . Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3 Comset Semiconductors
Comset Semiconductors
Original

2n3055 pin

Abstract: 2N3055 COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol , COMSET Semiconductors 2N3055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol , to change without notice. 2/2 COMSET Semiconductors Comset Semiconductors
Comset Semiconductors
Original
2n3055 pin

TIP142

Abstract: TIP141 TIP141 TIP142 TIP140 TIP141 TIP142 COMSET SEMICONDUCTORS Value Unit 60 80 100 60 80 , VCE= 4 V, IC= 10 A (*) Pulse Width = 200 µs, Duty Cycle 1.5% COMSET SEMICONDUCTORS 2/3 , information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 3/3 Comset Semiconductors
Comset Semiconductors
Original
tip141 equivalent TIP-142 tip142/GX55220A SOT93

BDY58

Abstract: BDY57 to Case Value BDY57 BDY58 COMSET SEMICONDUCTORS Unit 1 °C/W 1/3 BDY57 ­ BDY58 , COMSET SEMICONDUCTORS 2/3 BDY57 ­ BDY58 Symbol ts + tf Ratings Test Condition(s) IC=15 A , COMSET SEMICONDUCTORS 3/3 µs Comset Semiconductors
Comset Semiconductors
Original
Showing first 20 results.