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Part : CY7C1089DV33-12BAXI Supplier : Cypress Semiconductor Manufacturer : Rochester Electronics Stock : 408 Best Price : $181.00 Price Each : $181.00
Part : CY7C10820VC Supplier : Cypress Semiconductor Manufacturer : ComSIT Stock : 445 Best Price : - Price Each : -
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CY7C108 Datasheet

Part Manufacturer Description PDF Type
CY7C1081DV33-12BAXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64MBIT 12NS 48FBGA Original
CY7C108-25 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
CY7C108-25DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-25DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-25LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-25LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-35 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
CY7C108-35DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-35DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-35LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-35LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-45 N/A Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan
CY7C108-45DC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-45DMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-45LC Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C108-45LMB Cypress Semiconductor 131,072 x 8 Static R/W RAM Scan
CY7C1088 Cypress Semiconductor 128K x 9 Static RAM Original
CY7C1088-12 Cypress Semiconductor 128K x 9 Static RAM Scan
CY7C1088-12VC Cypress Semiconductor SRAM GP Single Port Original
CY7C1088-15 Cypress Semiconductor 128K x 9 Static RAM Scan
Showing first 20 results.

CY7C108

Catalog Datasheet MFG & Type PDF Document Tags

7C108

Abstract: 7C109-35 K AD VAN CED IN F O R M A TIO N CY7C108 CY7C109 'ß Features · High speed - U* = 25 ns , E 2 H IG H , and W E LOW ). T h e CY7C108 is available in a 32-pin rectan gular leadless chip , with C E i. CE2, and OE options T h e CY7C108 and CY7C109 are high-per form ance C M O S static R A , ADVANCED INFORMATION CY7C108 CY7C109 M axim um R atings (Above which the useful life may be im , pF pF 2-4 6 r £ F CYPRESS SEMODNDUCTCR ADVANCED INFORMATION R1 4 8 0 f t CY7C108
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OCR Scan
7C108 7C109-35 7C108-25D 7C108-25LC 7C108-35D 7C108-35LC 7C108-35LM 7C108-45LC

7C109

Abstract: ddgt Range 25 CY7C108-25DC D50 Commercial CY7C108â'"25LC L75 CY7C108-25DMB D50 Military CY7C108-25LMB L75 35 CY7C108-35DC D50 Commercial CY7C108-35LC L75 CY7C108â'"35DMB D50 Military CY7C108-35LMB L75 45 CY7C108-45DC D50 Commercial CY7C108-45LC L75 CY7C108-45DMB D50 Military CY7C108-45LMB , CYPRESS SEMICONDUCTOR 4bE D L3 ESfi^bbB CYPRESS T-Hlo'Zm PRELIMINARY 00Gb30b E3CYP CY7C108 , â Ã¤ CYPRESS 'Ã? SEMICONDUCTOR MbE D E3 250^2 D0Qb307 0 E CY7C108 PRELIMINARY CY7C109 ICYP
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OCR Scan
7C109 ddgt cy7c109-35dmb A14C C106 cy7c109-45dmb CY7C109-25DC CY7C109-25PC CY7C109-25VC CY7C109-25DMB CY7C109-35DC CY7C109-35PC
Abstract: . and OE options CY7C108 CY7C109 R eading from th e device is accom plished by taking chip , CY7C108 PRELIMINARY CY7C109 c ypress SEMICONDUCTOR â'" Selection Guide 7C108â'"35 , initially and after any design or process changes that may affect these parameters. CY7C108 CY7C109 , write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum o f tnzWE and tsD- CY7C108 , . i t 11â'™ 121 CY7C108 CY7C109 PRELIMINARY 'Jm CYPRESS W SEMICONDUCTOR Switching -
OCR Scan
Abstract: PRELIMINARY CY7C108 CY7C109 CYPRESS SEMICONDUCTOR Features · H igh speed - t,vA = 25 ns · , INARY 7 C 1 0 8 -2 5 7 C 1 0 9 -25 CY7C108 CY7C109 - SEMICONDUCTOR Selection G , CYPRESS SEMICONDUCTOR PRELIM INARY CY7C108 CY7C109 AC Test Loads an d W aveforms 5V O OUTPUT O , CY7C108 CY7C109 SEMICONDUCTOR Switching Waveforms R e a d C ycle N o. l l ' 1, I21 ·rc ADDRESS , SRAMs > c ÿ CYPRESS SEMICONDUCTOR PRELIMINARY CY7C108 CY7C109 Switching Waveforms W -
OCR Scan

ED188130C

Abstract: ED188128C 0.8 2.2 10 0. 4/8. 0 2. 4/4. 0 12 CY7C108/9-35 CYPRESS 0â'"70 35 35 15 15 25 20 0 0 0 4. 5â'"5. 5 160 50/40 0.8 2.2 10 0.4/8.0 2.4/4.71 12 CY7C108/9-45 CYPRESS 0â'"70 45 45 20 2G 30 25 0 0 0 4
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OCR Scan
EDI88128C-100 EDI88128C-35 EDI88128C-55 EDI88128C-70 ED188130C ED188128C ED188130CS-20 CY7CI08/9-25 CY7C108/9-35 CY7C108/9-45 EDI8S128C-4S

7C109B

Abstract: CU7C109-VC in this technology: CY7C108, 600-mil package Other Packages to be qualified for this device
Cypress Semiconductor
Original
7C109B CU7C109-VC EME-6300H CY7C109-VC

TC55B4257

Abstract: 93C46L CXK541020 CY7C108 HM624100 MB82201 MT5C64K16A1 MT5C1M4B2 MT5C512K8B2 MT5C256KX16 TC551664 TC551402
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OCR Scan
KM428C64 KM628512 93C46L 93C56L KM28C64B TC55B4257 UPD23C4000 atmel 93c66 Hitachi SRAM cross reference KM424C64 MT42C4064 PD41264 PD42264 HM53461 TMS4461

93c46 atmel

Abstract: uPD23C4000 HM624100 CY7C108 MB82201 MCM6226B CXK541020 MT5C64K16A1 ¡ MT5C1M4B2 MT5C512K8B2 TC551664
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OCR Scan
93c46 atmel sony Cross Reference HN62404P rom at29c010 tc5588 LH5322 256KX4 KM424C256 KM424C256A TC524256 TC524256A TC524256B

EME-6300H

Abstract: 6300H bonding or metal mask options or test selections and explain: CY7C108*, CY7C1399*, CY7C1597*, CY7C197*.
Cypress Semiconductor
Original
CY7C199 6300H mos die 7C199C 2KA/10KA/150A 3/R28 7C199 CY7C199-VC

41C464

Abstract: 41C1000 HM624257A/L CY7C107 CY7C106 CY7C101 CY7C108 CXK58258B MT5C1001 IDT71027 MT5C1005 IDT71028 MCM6229W
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OCR Scan
41C256 41C464 41C1000 44C1000 424170 NEC TC55B8128 CY70199 41C257 41C258 41C466

TC55B8128

Abstract: TC534000AF CY7C108 KM68257B/BL HM63832UH/L CY7C199 KM616513 KM611001 KM641001 KM641005 HM61100A/L HM624256A/L
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OCR Scan
HN62308BP TC534000AF KM23C4000AG hitachi cross TC551632 NM9306 TC511001 TC514101 514170B 514280B B0141O2 PD41256
Abstract: 100% Screened to MIL-STD-883, Class B â¡ Plug Compatible with Cypress CY7C108/109, IDT71024/71B024 -
OCR Scan
CY7C108/109 MT5C1008 MCM6226A/62L26A CXK581020 L7C108/109 L7C108

1221H

Abstract: 1419H s_OOfO L7C108/109 MHMW ^«â Mi mm DEVICES INCORPORATED 128K x 8 Static RAM (Low Power) FEATURES DESCRIPTION â¡ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable â¡ Auto-Powerdownâ"¢ Design â¡ Advanced CMOS Technology â¡ High Speed â'" to 17 ns maximum â¡ Low Power Operation Active: 550 mW typical at 25 ns Standby: 5 mW typical â¡ Data Retention at 2 V for Battery Backup Operation â¡ DSCC SMD No. 5962-89598 â¡ Available 100% Screened to MIL-STD-883, Class B â¡ Plug Compatible with Cypress CY7C108/109
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OCR Scan
1221H 1419H MCM6226A/ 62L26A L7C109 L7C109WI25 L7C109WI20 L7C109WI17

a1012L

Abstract: -883, Class B Plug Compatible with Cypress CY7C108/109, IDT71024 / 71B024, Micron MT5C1008, Motorola MCM6226A
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OCR Scan
a1012L 03/21/95-LDS 108/9-F L7C109KC25 L7C109KC20 L7C109KC17 L7C109KM25

109kc

Abstract: 232Z2 - " " _ ._- - jtv î;fs incorpüha i - . FEATURES 128K x 8 Static RAM with Chip Select Powerdown, Output Enable Auto-PowerdownTM Design Advanced CMOS Technology High Speed - to 15 ns maximum Low Power Operation Active: 550 mW (typical) at 25 ns Standby (typical): 5 mW (L7C108/109) 0.5 mW (L7C108-L/109-L) Data Retention at 2 V for Battery Backup Operation Available 100% Screened to MIL-STD-883, Class B Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron V1T5C1008, Motorola MCM6226A
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OCR Scan
109kc 232Z2 109PC 109CC25 109CC20 109CC17 109CC15 L7C109CM

K93C46

Abstract: MB832001 IDT71027 IDT71028 MCM6229W CXK541000 KM681001 CY7C108 MT5C1008 IDT71024 MCM6226W
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OCR Scan
K93C46 MB832001 93cs46n hn62308 548128 hn623257 416C256 B81256 B81257 B81258 B81464 B81466

L7C108WI15

Abstract: 62L26A q Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron MT5C1008, Motorola MCM6226A
Logic Devices
Original
L7C108WI15 L7C109WI10L 108/9-N L7C109KC15 L7C109KC12 L7C109KC10 L7C109YM15
Abstract: MIL-STD-883, Class B â¡ Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron MT5C1008 -
OCR Scan
L7C109DC25 L7C109DC20 L7C109DC17 L7C109WC25 L7C109WC20 L7C109WC17
Abstract: MIL-STD-883, Class B â¡ Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron MT5C1008 -
OCR Scan
L7C109DM25 L7C109DM20 L7C109DMB25 L7C109DMB20 L7C109WI17L 05/28/96-LD

18V04

Abstract: 62L26A DEVICES INCORPORATED L7C108/109 128Kx 8 Static RAM râ'"-â'"-, I FEATURES I DESCRIPTION â¡ 128K x 8 Static RAM with Chip Select Powerdown, Output Enable â¡ Auto-Powerdownâ"¢ Design â¡ Advanced CMOS Technology â¡ High Speed â'" to 17 ns maximum â¡ Low Power Operation Active: 550 mW typical at 25 ns Standby: 5 mW typical â¡ Data Retention at 2 V for Battery Backup Operation â¡ DESC SMD No. 5962-89598 â¡ Available 100% Screened to MIL-STD-883, Class B â¡ Plug Compatible with Cypress CY7C108/109
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OCR Scan
18V04 L7C109YC25 L7C109PC20 L7C109YC20 L7C109PC17 L7C109YC17 L7C109PI25

L7C108WC25

Abstract: MT5C1008 % Screened to MIL-STD-883, Class B q Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron
Logic Devices
Original
L7C108WC25 108/9-J L7C109KM20 L7C109KMB25 L7C109KMB20 L7C109KC17L

CXK581020

Abstract: L7C109WC25 -883, Class B q Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron MT5C1008, Motorola
Logic Devices
Original
L7C108YM25 L7C108YMB25 L7C108DMB25 5962-89598 smd diode K10 smd transistor A6 3 L7C109PC25 L7C109PI20 L7C109PI17 L7C109YM25 L7C109YM20 L7C109YMB25

98-LD

Abstract: L7C1 n a/m g L 7 C 1 0 3 /1 OS IJbVIÜI-S INuuHHÜKA I H 128K x 8 Static RAM (Low Power) 128K x 8 Static RAM with Chip Select Powerdown, Output Enable Auto-PowerdownTM Design Advanced CMOS Technology High Speed - to 10 ns maximum Low Power Operation Active: 570 mW typical at 15 ns Standby: 5 mW typical Data Retention at 2 V for Battery Backup Operation DSCC SMD No. 5962-89598 Available 100% Screened to MIL-STD-883, Class B Plug Compatible with Cypress CY7C108/109, IDT71024/71B024, Micron MT5C1008
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OCR Scan
98-LD L7C109WI10 L7C109DM15 L7C109DM12 L7C109DMB15 L7C109DMB12 04/01/98-LD
Showing first 20 results.