R52D-3 CY7C1041BV33 CY7C1046BV33 CY7C1049BV33

Product Qualification Report QTP# 000305 VERSION 1.0 March, 2000 4 Meg Asynchronous SRAM R52D-3 Technology at Fab 4 CY7C1041BV33

Cypress Semiconductor Product Qualification Report QTP# 000305 VERSION 1.0 March, 2000 4 Meg Asynchronous SRAM R52D-3 R52D-3 Technology at Fab 4 CY7C1041BV33 CY7C1041BV33 256K x 16 Static RAM CY7C1046BV33 CY7C1046BV33 1M x 4 Static RAM CY7C1049BV33 CY7C1049BV33 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager (408)432-7069 Cypress Semiconductor, Inc. 4 Meg SRAM R52D-3 R52D-3 Technology - Fab 4 Device: CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 Package: 36L SOJ QTP# 000305, V. 1.0 Page 2 of 6 March, 2000 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualifies 4 Meg Synchronous RAM, CY7C1049BV33 CY7C1049BV33 and its options in qualified R52-3D R52-3D technology, Fab4. Marketing Part #: CY7C1049BV33 CY7C1049BV33 Package: 36-pin SOJ Device Description: 4 Meg Asynchronous SRAM Cypress Division: Cypress Semiconductor Corporation MPD Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 253 mils x 265 mils Rev. B 7C1049B 7C1049B What ID markings on Die: TECHNOLOGY/FAB PROCESS DESCRIPTION - R52D-3 R52D-3 Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW/6,000Å Al -0.5% Cu/300Å TiW Metal 2: 300Å Ti /8,000Å Al-0.5%Cu/300 Å TiW Passivation Type and Materials: 1000Å Oxide,9000Å Nitride Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device 26M Number of Gates in Device 4,5M Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Metal /0.25 µm Gate Oxide Material/Thickness (MOS): 55 Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52D-3 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 36-leads, 400 mil SOJ Mold Compound Name/Manufacturer: Hitachi CEL9200 CEL9200 Mold Compound Tg, C: Lead Frame material: 120 Copper Lead Finish, composition: Solder Plated, 90%Sn, 10%Pb Thermal Resistance Theta JA 50 Die Attach Area Plating: Silver Spot Die Attach Method: Epoxy Die Attach Material: Ablestik 8361H 8361H Wire Bond Method: Thermosonic Wire Material/Size: Au / 1.0 mil JESD22-A112 JESD22-A112 Moisture Sensitivity Level: Level 3 Name/Location of Assembly (prime) facility: Cypress Philippines (CSPI-R) Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor, Inc. 4 Meg SRAM R52D-3 R52D-3 Technology - Fab 4 Device: CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 Package: 36L SOJ QTP# 000305, V. 1.0 Page 3 of 6 March, 2000 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 3.8 V, 150°C P High Accelerated Saturation Test (HAST) 130°C, 3.63V Precondition: P Temperature Cycle MIL-STD-883C MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30C/60 30C/60%RH) P Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883 MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) Cypress Spec. 25-00020 Latchup Sensitivity In Accordance with JEDEC 17. Cypress Spec. 01-00081 JESD22 JESD22 Moisture Sensitivity Level 3 (192 Hrs, 30/60% RH) 2,200V P 1000V 8V ±200mA *Alpha Particle Sensitivity Cypress Spec. 25-00055 P 0 Fit Long Life Verification Cypress Spec. 29-00020 (150°C/4.5V) P Pressure Cooker Cypress Spec 22-00047 P *Done on Technology R52D-3 R52D-3, QTP #99311. (121°C/100 C/100%RH) Cypress Semiconductor, Inc. 4 Meg SRAM R52D-3 R52D-3 Technology - Fab 4 Device: CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 Package: 36L SOJ QTP# 000305, V. 1.0 Page 4 of 6 March, 2000 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours High Temperature Operating Life Early Failure Rate not performed 2 3 4 Activation Energy Thermal AF4 Failure Rate N/A N/A N/A N/A N/A 265,000 0 0.7 170 20 FIT 1 High Temperature Operating Life2,3 Long Term Failure Rate 1 # Fails Early Failure Rate was not performed. Production burn-in of 24 Hrs at 150°C, 4.5V is required for the product. Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. QTP# 000305, V. 1.0 5 of 6 March, 2000 4 Meg SRAM R52D-3 R52D-3 Technology - Fab 4 Package: 36L SOJ QTP#: DEVICE = VCB STRESS: STRESS: S/S = REJ = CSPI-R 4931076 619937742M 619937742M 48 1475 0 619925327 619937391 COMP COMP 3 3 0 0 3 3 3 0 0 0 CSPI-R CSPI-R CSPI-R CSPI-R CSPI-R FAIL MODE = (750V) 4921786 4931076 4921786 4931076 4931076 619925327 619937391 619937391 (4,400V) COMP COMP 3000V CSPI-R CSPI-R 4921786 4921786 619925327 619925327 S/RE-FLOW 128 50 50 0 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V) VCB VCB STRESS: DURATION = HI-ACCEL SATURATION TEST (140C/85 140C/85%RH/3.63V), PRECOND. 192 HRS 30C/60 30C/60%RH VC VC STRESS: FABLOT# ASSYLOT# = = ,4.5V) ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 VC VCB VCB STRESS: ASSY-LOC = ESD-CHARGE DEVICE MODEL VC VCB 000305 CSPI-R CSPI-R 4931076 4931076 619937741 619937741 80 500 530 530 0 0 48 48 48 48 0 0 0 0 TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60 30C/60%RH (MSL 3) VC VC VC VC CSPI-R CSPI-R CSPI-R CSPI-R 4921786 4921786 4921786 4921786 619925327 619925327 619925327 619925327 S/RE-FLOW 300 500 1000 Cypress Semiconductor, Inc. QTP# 000305, V. 1.0 Page 6 March, 2000 Device: CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 RELIABILITY TEST DATA QTP#: DEVICE STRESS: ASSY-LOC FABLOT# ASSYLOT# 99503 5 DURATION S/S REJ FAIL MODE HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 3.8V) - 5 QTP 99503 qualifies 4 Meg Synchronous Flow Through 3.3V Cache RAM, CY7C1325B CY7C1325B and its options in qualified R52D-3 R52D-3 Technology, Cypress Semiconductor, Inc. 4 Meg SRAM R52D-3 R52D-3 Technology - Fab 4 Device: CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 Package: 36L SOJ QTP# 000305, V. 1.0 Page 7 of 6 March, 2000 RELIABILITY TEST DATA QTP#: 993116 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ = = = = = = = STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 4.5V) FAIL MODE = CY7C1329-AC CY7C1329-AC CSPI-R 4905886 48 2988 0 CY7C1329-AC CY7C1329-AC CSPI-R 4905886 619909761 48 1205 0 CY7C1329-AC CY7C1329-AC CSPI-R 4905886 619909776 48 871 0 CY7C1329-AC CY7C1329-AC CSPI-R 4909345 619911324 48 1584 1 1 PARTICLE DEFECT CY7C1329-AC CY7C1329-AC CSPI-R 4909345 619911327 48 1669 0 -STRESS: ESD-CHARGE DEVICE MODEL CY7C1329-AC CY7C1329-AC CSPI-R 4853292 619902690 1000V 3 0 CY7C1329-AC CY7C1329-AC CSPI-R 4901357 619903817 750V 3 0 -STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 CY7C1329-AC CY7C1329-AC CSPI-R 4853292 619902690 2200V 3 0 CY7C1329-AC CY7C1329-AC CSPI-R 4901357 619903817 2200V 3 0 -STRESS: HI-ACCEL SATURATION TEST (140C/85 140C/85%RH/3.63V), PRECOND. 192 HRS 30C/60 30C/60%RH CY7C1329-AC CY7C1329-AC CSPI-R 4853292 619902690 128 48 0 CY7C1329-AC CY7C1329-AC CSPI-R 4853292 619902690 256 48 0 CY7C1329-AC CY7C1329-AC CSPI-R 4901357 619903817 128 48 0 -STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C1329-AC CY7C1329-AC CSPI-R 4842121 619815465 336 48 0 CY7C1329-AC CY7C1329-AC CSPI-R 4843204 619815797 336 48 0 -STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY7C1329-AC CY7C1329-AC CSPI-R 4842121 619815465 80 80 0 CY7C1329-AC CY7C1329-AC CSPI-R 4842121 619815465 168 80 0 CY7C1329-AC CY7C1329-AC CSPI-R 4843204 619815797 80 80 0 CY7C1329-AC CY7C1329-AC CSPI-R 4843204 619815797 168 80 0 -STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 3.8V) CY7C1329-AC CY7C1329-AC CSPI-R 4905886 619909761 80 1196 0 CY7C1329-AC CY7C1329-AC CSPI-R 4905886 619909761 500 799 0 CY7C1329-AC CY7C1329-AC CSPI-R 4909345 619911324 80 1491 1 1 UNKNOWN CAUSE CY7C1329-AC CY7C1329-AC CSPI-R 4909345 619911324 500 1199 1 1 UNKNOWN CAUSE CY7C1329-AC CY7C1329-AC CSPI-R 4909345 619911327 80 1640 0 CY7C1329-AC CY7C1329-AC CSPI-R 4909345 619911327 500 1451 1 1 UNKNOWN CAUSE -STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C1329-AC CY7C1329-AC CSPI-R 4853292 619902690 168 48 0 CY7C1329-AC CY7C1329-AC CSPI-R 4901357 619903817 168 46 0 -STRESS: STATIC LATCH-UP TESTING (+/-200 mA) CY7C1329-AC CY7C1329-AC CSPI-R 4853292 619902690 9.98V 3 0 CY7C1329-AC CY7C1329-AC CSPI-R 4901357 619903817 9.96V 3 0 -STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60 30C/60%RH (MSL 3) CY7C1329-AC CY7C1329-AC CSPI-R 4842121 619815465 300 48 0 CY7C1329-AC CY7C1329-AC CSPI-R 4842121 619815465 1000 48 0 CY7C1329-AC CY7C1329-AC CSPI-R 4843204 619815797 300 45 0 CY7C1329-AC CY7C1329-AC CSPI-R 4843204 619815797 1000 45 0 - 6 QTP #99311, 4Meg SRAM,R52D-3 R52D-3 Technology Qualification.