CY7C1021 7C1021A JESD22-A112 JESD22 MIL-STD-883C MIL-STD-883 85C/85 CY7C1021-VC - Datasheet Archive

 

Qualification Report QTP# 97051 VERSION 1.0 April, 1997 64K x 16 Static RAM CY7C1021 Cypress Semiconductor 64K x 16 Static RAM

 

Cypress Semiconductor Qualification Report QTP# 97051 VERSION 1.0 April, 1997 64K x 16 Static RAM CY7C1021 CY7C1021 Cypress Semiconductor 64K x 16 Static RAM Device: CY7C1021 CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97051, V. 1.0 Page 2 of 6 April, 1997 PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied: Marketing Part #: CY7C1021 CY7C1021 Package: 44 pins, 400 mil SOJ Device Description: 64K x 16 Static RAM Cypress Division: Cypress Semiconductor Corporation - MPD Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Die Size (stepping): 152 mils x 445 mils Rev. A What ID markings on Die: 7C1021A 7C1021A TECHNOLOGY/FAB PROCESS DESCRIPTION - R28 Number of Metal Layers: 2 Metal Composition: Passivation Type and Materials: 7000A TEOS + 6000A Si2N4 Free Phosphorus contents in top glass layer(%): Die Coating(s), if used: Metal 1: Ti/TiW/Al-Si/TiW, 500Å/1.2KÅ/6KÅ/1.2K Å Metal 2: TiW/Al-Si/TiW, 1.2KÅ/10KÅ/150Å N/A None Number of Transitor in device 4,295,692 Number of Gate in device Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: CMOS, Double Poly, Double Metal /0.65 µm SiO2 / 165 Å Cypress Semiconductor - Bloomington, MN Fab4/R28 Cypress Semiconductor 64K x 16 Static RAM Device: CY7C1021 CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97051, V. 1.0 Page 3 of 6 April, 1997 PLASTIC PACKAGE/ASSEMBLY DESCRIPTION Package Outline, Type, or Name: 44-pin, 400 mil SOJ Mold Compound Name/Manufacturer: Lead Frame material: Nito-MP8000 A194 FH Lead Finish, composition: Solder Plated, 90%Sn, 10%Pb Die Attach Area Plating: Silver Spot Die Attach Method: Paste Die Attach Material: Ablestik 8361A Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.0 mil JESD22-A112 JESD22-A112 Moisture Sensitivity Level Level 3 (Part will be shipped with dry baked/packed) Assembly Line ID and Process ID: ASE, Taiwan Note: Please contact a Cypress Representative for other packages availability. Cypress Semiconductor 64K x 16 Static RAM Device: CY7C1021 CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97051, V. 1.0 Page 4 of 6 April, 1997 RELIABILITY TESTS PERFORMED Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc = 5.75V, 150°C P Read and Record Life Test Dynamic Operating Condition, Vcc = 5.75V, 150°C P High Temperature Steady State Life Static Operating Condition, Vcc = 5.75V, 150°C P High Accelerated Saturation Test (HAST) 140°C, 85%RH, 5.5V Precondition: JESD22 JESD22 Moisture Sensitivity Level 1 (168 Hrs, 85/85% RH) P Temperature Cycle MIL-STD-883C MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 JESD22 Moisture Sensitivity Level 3 (168 Hrs, 85/85% RH) P Alpha Particle Sensitivity Cypress Spec. 25-00055 2,200Fit * Thermal Shock Cypress Spec. 25-00014 P Electrostatic Discharge Human Body Model (ESD-HBM) MIL-STD-883 MIL-STD-883, Method 3015.7 Electrostatic Discharge Charge Device Model (ESD-CDM) Cypress Spec. 25-00020 Latchup Sensitivity In accordance with JEDEC 17. Cypress Spec. 01-00081 2,000V 1,500V P 11.48V * Improvement is in progress with R3/R3.3 technology conversion. Cypress Semiconductor 64K x 16 Static RAM Device: CY7C1021 CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97051, V. 1.0 Page 5 of 6 April, 1997 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate3 High Temperature Operating Life1,2 Long Term Failure Rate 1 Device Tested/ Device Hours # Fails Activation Energy Thermal AF Voltage AF Failure Rate N/A N/A N/A N/A N/A N/A 120,000 DHRs 0 0.6 56 1 94 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Production burn-in @ 48 Hrs/150°C/7V was performed for this device. 2 Cypress Semiconductor 64K x 16 Static RAM Device: CY7C1021 CY7C1021 Package: 44-pin, 400-mil SOJ QTP# 97051, V. 1.0 Page 6 of 6 April, 1997 RELIABILITY TEST DATA QTP#: 97051 DEVICE ASSY-LOC FABLOT# ASSYLOT# DURATION S/S REJ = = = = = = = STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 168 HRS 85C/85 85C/85%RH FAIL MODE = CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 128 48 0 -STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 5.75V) CY7C1021-VC CY7C1021-VC CY7C1021-VC CY7C1021-VC TAIWN-G TAIWN-G 4641210 4641210 349614765 349614765 80 168 80 80 0 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 80 78 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 168 78 0 -STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V) CY7C1021-VC CY7C1021-VC CY7C1021-VC CY7C1021-VC TAIWN-G TAIWN-G 4641210 4641210 349614765 349614765 80 500 120 120 0 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 80 120 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 500 120 0 -STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 0 10 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 500 10 0 -STRESS: TC COND. C, -65 TO 150C, PRECOND. 168 HRS 85C/85 85C/85%RH CY7C1021-VC CY7C1021-VC CY7C1021-VC CY7C1021-VC TAIWN-G TAIWN-G 4642247 4642247 349614989 349614989 300 1000 48 48 0 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4645382 349616186 300 48 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4645382 349616186 1000 48 0 -STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30C/60 30C/60%RH CY7C1021-VC CY7C1021-VC CY7C1021-VC CY7C1021-VC TAIWN-G TAIWN-G 4642247 4642247 349614989 349614989 300 1000 48 48 0 0 CY7C1021-VC CY7C1021-VC CY7C1021-VC CY7C1021-VC TAIWN-G TAIWN-G 4645382 4645382 349616186 349616186 300 1000 48 48 0 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4650544 619700807L 619700807L 300 50 0 -STRESS: THERMAL SHOCK, CONDITION B CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 100 50 0 CY7C1021-VC CY7C1021-VC TAIWN-G 4642247 349614989 200 50 0 -