CXXX-CB290-E1000 MIL-STD-883E OS4000

SuperBrightTM LEDs CXXX-CB290-E1000 ® The Leader in Silicon Carbide Solid State Technology Features · Applications

G·SiC® Technology SuperBrightTM LEDs CXXX-CB290-E1000 CXXX-CB290-E1000 ® The Leader in Silicon Carbide Solid State Technology Features · Applications High Performance · 3.5mW (450nm) Deep Blue 3.0mW (460nm) Deep Blue 2.5mW (470nm) Blue 2.5mW (490nm) Aqua Blue 2.0mW (505nm) Signal Green 1.5mW (525nm) Green · Single Wire Bond Structure · Outdoor LED Video Displays · White LEDs · Automotive Dashboard Lighting · Cellular Phone Backlighting · Audio Product Display Lighting · Traffic Signals Class II ESD Rating Description Cree's CBTM series of SuperBrightTM LEDs combine highly efficient InGaN materials with Cree's proprietary SiC substrate to deliver excellent price performance for high intensity blue and green LEDs. These LED chips have an industry standard vertical chip structure which requires only a single wire bond connection. Cree's CB series chips are individually tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also be used in high volume applications such as LCD backlighting. Cree's CB series chips are compatible with most radial and SMT LED assembly processes. CXXX-CB290-E1000 CXXX-CB290-E1000 Chip Diagram Topside View Die Cross Section G · SiC® LED Chip 300 x 300 µm Mesa (junction) 240 x 240 µm Gold Bond Pad 120 µm Diameter CPR3U Rev. F © 1998-2002 Cree, Inc. All Rights Reserved. Anode (+) InGaN SiC Substrate h = 250 µm Backside Metallization Cathode (-) G·SiC® Technology SuperBrightTM LEDs CXXX-CB290-E1000 CXXX-CB290-E1000 Maximum Ratings at TA = 25°C Notes 1&3 CXXX-CB290-E1000 CXXX-CB290-E1000 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -20°C to +80°C Storage Temperature Range -30°C to +100°C Electrostatic Discharge Threshold (HBM) Note 2 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E MIL-STD-883E) Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3 Part Number Forward Voltage (Vf, V) Radiant Flux (P, mW) Reverse Current [I(Vr=5V), µA] Flux (mlm) Peak Wavelength (p, nm) Dominant Wavelength (d, nm) Halfwidth (D, nm) Optical Rise Time (, ns) Typ Max Min Typ Max Typ Typ Min Typ Max Typ Typ C450 3.3 3.7 2.5 3.5 10 133 445 445 450 455 20 30 C460 3.3 3.7 2.0 3.0 10 96 458 455 460 465 26 30 C470 3.3 3.7 2.0 2.5 10 150 468 465 470 475 26 30 C490 3.3 3.7 2.0 2.5 10 400 488 485 490 495 26 30 C505 3.3 3.7 1.5 2.0 10 485 502 500 505 510 30 30 C525 3.3 3.7 1.0 1.5 10 477 523 520 525 535 36 30 Mechanical Specifications Description P-N Junction Area (µm) Bottom Area (µm) Chip Thickness (µm) Au Bond Pad Diameter (µm) Au Bond Pad Thickness (µm) Back Contact Grid Spacing (µm) Back Contact Metal Width (µm) CXXX-CB290-E1000 CXXX-CB290-E1000 Dimension 240 x 240 300 x 300 250 120 1.2 140 19.8 Tolerance ± 25 ± 25 ± 25 ± 20 ± 0.5 ± 15 -5,+10 Notes: 1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 350°C (< 15 minutes). 2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class II is based on sample testing according to MIL-STD 883E. 3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 OS4000 epoxy). Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E. 4) Specifications are subject to change without notice. CPR3U Rev. F © 1998-2002 Cree, Inc. All Rights Reserved.