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CQY 24 Datasheet

Part Manufacturer Description PDF Type
CQY24 N/A Shortform Electronic Component Datasheets Scan
CQY24A Mullard Quick Reference Guide 1977/78 Scan
CQY24A N/A Diode, Transistor, Thyristor Datasheets and more Scan
CQY24B N/A Basic Transistor and Cross Reference Specification Scan

CQY 24

Catalog Datasheet MFG & Type PDF Document Tags

led 7 segment anode TIL 702

Abstract: trw 007 diodes 21 21 22 22 22 23 23 24 24 24 24 25 Matchable Pairs (Emitters and Detectors , B BPW 13 C BPW 14 A BPW 14 B BPW 14 C BPW 16 N BPW 17 N BPW 20 BPW 21 â'¢ â'¢ BPW 24 BPW , COX 48 A COX 48 B CQY 36 N CQY 37 N CQY 80 N * * CQY 80 NG â'¢ â'¢ Page 14 13 13 13 13 , 13 15 16 16 14 14 14 13 15 15 15 15 13 13 13 13 24 24 24 24 22 22 22 22 22 , 41 41 41 42 42 42 42 12 12 12 12 23 23 23 23 23 23 24 23 23 23 23 23 23 21
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led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m TTA 5200 toshiba gb 44 706a Spectronics

CQY99

Abstract: CQY 24 CQY 34 A 10 25° 2.4 13 100 500 600 «3 B 10 25° 3.6 13 100 500 600 3 C 10 25° >5 13 100 500 600 »»3 CQY 35 A 11 10° 2.4 20 100 500 600 «3 B 11 10° 3.B 20 100 500 600 => 3 C 11 10° >5 20 100 500 600 «3 CQY 36 12 80° 2 0.4 50 500 600 =» 3 CQY 37 13 25° 2 2.2 50 500 600 «3 CQY 38 H A 14 160° 4.8 1.6 100 500 600 «3 B 14 160° 6.12 1.6 100 500 600 «3 C 14 160° >10 , mW/sr mA ns ns CQY31 7 80° 1 0.25 100 100 100 2 CQY32 8 10° 1 4.5 100 100 100 2 CQY 33 A 9
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CQY99 CQY 24 CQY34A CQY33A cqy 35 n CQV36

WF VQE 13

Abstract: VQE 24 rot VQE 14 - - - TLR325 12 grün VQE 23 - - - TLG 324 12 grün VQE 24 - - - TLG 325 12 grün VQB , VQ 123 SFH409 TSUS 3400. CQX 46 (OP 161 SLA-D) (TIL32) SEP 8505-1. .4 (MEL 760) CQY 58 A 19 VO 125 LD 271 TSHA 5500 . . 5503 (OP 160 SLA-D) TIL 38 SEP 8503-1. . .4 CQY 99 CQY 89 A CQY 99, V290 , ), (BPW 96) OP 593 TIL 414 SDP 8403-2. .4 24 SP 101 (BPX61) - - (TIXL51) - 25 SP 102 (BPX65) (BPW 24
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VQE21 VQB201 MCL611 WF VQE 13 VQE 24 WF VQE 24 Wf vqe 14 vqe 23 VQE11 TLR326 TLR327 TLG327

LP 8029

Abstract: CQY 24 2.4 94 8081 29.5 28.5 Rev. A1: 01.09.1994 1 CQY 36 N TELEFUNKEN Semiconductors , CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature (T­¾) Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its , 1.6 Unit V V pF mW/sr mW %/K deg nm nm ns ns Rev. A1: 01.09.1994 CQY 36 N , Forward Current ( mA ) 104 Figure 6 : Radiant Power vs. Forward Current 3 CQY 36 N
Temic Semiconductors
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BPW16N LP 8029 DIN 7990 diode 8638 cqy 17 D-74025

germanium

Abstract: cqx 87 24 CQY31 CQY 32 C Q Y33N CQY3 4 N CQY3 5 N CQY 36 CQY 36 N CQY 37 CQY3 7 N CQY4 0 L CQY , LEDâ'™s C Q Y40 L V168 P CQX 35 CQX 25 N CQY 85 N CQX 10 Page 24 24 24 24 24 24 , 24 24 24 24 24 24 Yellow light LEDâ'™s CQY 74 L V 170 P CQX 37 CQX 27 N CQY 87 N CQY 75 , 30 Photo avalanche diode 30 Coupling devices CNY 18 CNY21 O CNY 24 â¼ CNY 36 CNY 37 CQY , Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated
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germanium cqx 87 TDA 2516 aa117 tda1087 BZY87 Series AA113 AA117 AA119 BAV17 BAV18 BAV19

bpx28

Abstract: TAA920 Sensor-Zellen Light sensors Schalter Switches Multichipbauelemente in Zeilenform Multichip devices in array 24 , BA 204 BAW 24 BAW25 BAW 26 BAW 27 BAX 20 BAX 21 BAY 67 BAY 68 BAY 69 BAY 78 BAY 86 BAY 87 BAY 88 BAY , BPW 12 BPW 13 BPW 14 BPW 15 25 26 25 26 25 24 24 24 25 24 21 21 21 BU 108 BUY 83 BY 167 BY 201 , /C. CQY10 CQY31 CQY32 CQY33 CQY34 CQY 35 CQY 36 CQY 36/9 CQY 37 CQY 37/9 CQY 38 CQY 39 CQY 40 CQY 40/5 6 '6 6 5 5 5 5 5 5 5 '6 16 16 16 16 16 16 16 16 16 16 24 24 24 25 25 25 BSV 16
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bpx28 TAA920 Germanium diode OA 182 fy sot 143 AC187K BSV57B

RPY 86

Abstract: valvo halbleiter 51 CQX 54 CQX 64 CQX 74 C Q Y 24 B CQY 49 C CQY 54 A CQY 89 A CQY 94 B CQY 95 B CQY 96 CQY 97 H X . , . 24 kleiner und mittlerer Leistung. 24 für Verstärker- und Schalteranwendungen . 24 Unijunction-Transistoren. 35 , BFQ 24 BFQ 32 S BFQ 33 BFQ 34 BFQ 34 T BFQ 42 BFQ 43 BFQ 51 BFQ 52 BFQ 53 BFQ 63 BFQ 65 BFQ 66 BFQ 68 , BC 328 24 24 24 24 24 24 24 24 36 24 24 24 BC 337 24 BC 338 24 BC 368 24 BC 369 24 BC 516 24 BC
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RPY 86 valvo halbleiter BV EI 30-20 3001 LDR 03 RPY94 diode byx 64 600 DO-34

TCA780

Abstract: TFK U 111 B TFK TSHA 5502 TFK TSHA 5201 TFK TSHA 4401 TFK CNY21 N TFK CQY 80 N TFK CNY 75 B TFK CNY 75 B TFK TCDT 1100 TFK CQY 80 N TFK CNY 17-1 TFK CNY 17-2 TFK CNY 17-3 TFK CNY 75 C TFK , TFK TCDT 1124 TFK TCST 2103 TFK 4 N 25 TFK 4 N 25 TFK Page 24 of 128 Industry Part Number , N 32 CNY 75 B CNY 17-1 CQY 80 N CNY 21 N CNY 21 N CNY 65 CNY 75 A CNY 75 B CNY 75 C CR200
Temic Semiconductors
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TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725

CQY 24

Abstract: BPW16N Suitable for visible and near infrared radiation D Compatible with IR diode CQY 36 N Applications , 1.5 2.8 2.4 94 8080 29.5 28.5 We reserve the right to make changes to improve technical
Temic Semiconductors
Original

vz00

Abstract: cqy 81 7 a a 10 -12 13 14-23 24 1 , ) 366-2266 r-_. ,««> *
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vz00 cqy 81 C34JI AT-103

LDR 03

Abstract: valvo halbleiter BFQ 17 BFQ 18 A BFQ 19 BFQ 22 BFQ 23 BFQ 24 Seite 26 26 32 32 32 32 32 4 4 4 4 32 32 32 32 4 12 32 , 20 20 20 20 · 20 20 20 20 20 20 22 22 22 22 22 22 22 22 22 24 24 24 24 24 24 24 24 24 24 24 24 26 26 , 34 BFS 17 (R) bis BFS 20 (R) 32 BFS 22 A 38 BFS 23 A 38 BFT 24 32 BFT 25 (R) 32 BFT 46 4 BFT 92 (R , bis BSY 56 · BT 136 · bisBT 139 BT 149 · BT 151 bis BT 155 BT 157 BTV 24 BTV 58 BTV 59 BTW 23 BTW 24 , CNY63 CQL10 CQT10 CQV60 bis CQV 62 CQW 10 bis CQW 12 CQW 24 CQW 51 CQW 54 CQX10 bis CQX 12 CQX 24 CQX 51
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LDR -03 CNY62 BYX 71 800 CXY19 VALVO BZW10-12

cqvp 31

Abstract: BPYp 43 '¢ +55 -55 â'¢ â'¢ â'¢ +70 , CQTP 23 , 9 10 11 12 13 BPRP 221 / , ,05 5 30 a CO 03 BPYP 22 , NC 8 wspàìna anoda wspólna katoda 9 katoda f anoda f 10 katoda £ anoda g CO 23 CO 24
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CQYP75 CQYP95 BPYP26 BPYP46 CNMP67 cqvp 31 BPYp 43 CQYP74 cqvp31 BPSP34 BPYP25 COYP57

5202 GE

Abstract: STS7102 mA mA CQY 36 N Fig. 4 T3 /. (1.8 m m ) B lu e p ia si ic p a c ka ge ±40° 1.5 0 0 . 7 , ) 10 0 c Fig. 15 ± 22 ° 1 4 ( > 7) 17 (> 1 0 ) 20 0 1 5 ) 100 1.3 2.4 1.3 2.3 1.3 2.4 , 0 ) ±12° 60 0 3 6 ) 65 0 5 0 ) 20 0 1 2 ) 25 0 1 6 ) ±24° 30 0 2 0 ) 3 5 0 24) 40 0 2 5 ) 50 0 3 0 ) ±12° 60 0 3 6 ) 65 0 5 0 ) 20 0 1 2 ) 25 0 16) ±24° 30 0 2 0 ) 35 0 2 4 ) mA A Fig. 7 T 1% (5 mrn , « 1 . 8 ) 2.4 « 3 . 2 ) 10 0 1500 950 600 T S IP 5 2 0 0 ±20° 30 0 2 0 ) 10 0 40 0 3
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5202 GE STS7102 KA 7502 TS7101 CQY37N

ZPD 5.1 ITT

Abstract: diode zener ZD 88 BYY90 BYY91 BYY92 210 210 210 210 210 Alphabetic Index of Types T ype Page CQY 65 CQY 66 CQY 67 192 192 192 EM 513 106 110 T 0,8 T 0,8 T 0,8 T 0,8 T 0,8 T 0,8 , source resistance o f the in p u t supply so th a t Vjn is the source EMF. 24 Technical Information
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ZPD 5.1 ITT diode zener ZD 88 ZPD ITT BYY32 ITT ZPD 9,1 zpd 3.3 itt F-92223 D-7800 I-20093

TCHT1130

Abstract: Ex-90C fott at /_ and f t .L , c ps M S mA kO 1.1 < 1 .5 < 1 .5 16 4.1 2.4 < 0 .8 < 0 .8 16 1.9 * S 6 N 136 2 5 0 0 24 (>19) L2J 111 C nc High Gain , (BRICEO E rü n u 9 0 (> 5 0 ) 11 CQY 8 0 NG !> Standard Type Fig. 68, "G" Type Fig. 69
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TCHT1130 Ex-90C TCDT1020 TCDT1021 TCDT1022 TCDT1023 T1101 TCDT1101

Photo diode TFK S 186 P

Abstract: TFMS 4300 11 F 249 CQX 19 71 BPV 20 F 261 CQX 48 75 BPV 20 NFL 265 CQY 36 N 81 BPV 21 F 269 CQY 37 N 85 BPV 22 F 273 TSHA 620. 113 277, 505 TSHA 650 , 20 R 313 S 239 P 403 BPW 21 R 317 S 254 P N 407 BPW 24 R 321 S 268 P , nm) in plastic package CQY 36 N 40_ 400 1.5(>0.7) 50 1.2( , ) TSHA 5501 TSHA 5502 24_ 300 25(>16) 30(>20) TSHA 5503 35(>24) TSHA 6200 40(>25
Temic Semiconductors
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Photo diode TFK S 186 P TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector
Abstract: /15.7 9.3/15.7 9.3/15.7 9.3/15.7 k il min/max 0.8 2.4 ±1 10 0.8 2.4 ±10 10 0.8 2.4 ±1 10 0.8 2.4 ±10 10 V max V min (j-A max pF max 4.75/5.25 2 2 4.75 , amplifier for input code transition 10000000 to 00000000 Output Capacitance, CQy^ AC Feedthrough VIN A , 15 18 21 24 27 0 30 ATTENUATION - dB 12 18 24 30 36 42 48 54 60 66 -
OCR Scan
AD7112 AD7528 17-BIT

u211b

Abstract: U211B3 components Ri can be easily evaluated from the figures 22 to 24. 8 (21) Rev. A3, 05-Aug-99 Temic , 4.711 F 2.2nl 1 ! Cqy, =1.5r lF / 0 0.2 0.4 0.6 R , Temic Semiconductors C3 M 0 6 12 18 24 30 Figure 21. Automatic retriggering repetition rate OS pi , 6 9 I,ot ( mA ) Figure 24. Power dissipation of Ri according to current consumption 12 15 14 (21
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u211b U211B3 ac motor speed control circuit with triac U211B triac control tacho generator U211B

TFK 680 CNY 70

Abstract: 7447n .21 2.4. Tranzystory FET , .24 3.1. Fotodiody , .24 3.3. Diody elektroluminesoencyjne , 22 B11/C7 C22-3 110 TO-18 TO-18 CB-6 8 CE 23 B4C/C4 C6-2 112B T0-39 TO-39 CB-7 9 CE 24 134 TO , 126 TO-74 TO-74 10 wyprowa-dzeri 24 CE 53 TO-92 CB-11 8 wyprowa- dzeri 25 CE 70 A49B 107 TO
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TFK 680 CNY 70 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 Katalog CEMI

bzp 650 c10

Abstract: bzp 650 c12 .45 2.4. Tranzystory rr.a+ej cz^stotliwoéci duiej mocy specjalne , 496* 46 BDY 23 46 BDY 24 46 BDY 25 46 BF 167 49 BF 173 49 BF 180 49 BF 181 49 BF 182 49 BF , * 50 BFS ISR* 50 BFS 19* 50 BFS I9R* 50 BPRP 22 6 5 BPRP 24 65 BPRP 25 65 BPSP 34* 64 BPXP 28 65 BPYP 21 6 5 BPYP 22 65 BPYP 24 6 5 BPYP 25 65 BPYP 26 6 5 BPYP 30 64 BPYP 35 64 BPYP 41 64 , 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2 3 2"+ 24 24 2 4 24 24 24 Oznaczenie
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bzp 650 c10 bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 BDP 284 NTCI11 TC212 NTC220 NTC22I NTC50I
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