ENN6936 CPH6351 --20V --10V TA-2650 IT03108 IT03109 IT03110 IT03111 IT03112

CPH6351 P-Channel Silicon MOSFET CPH6351 Ultrahigh-Speed Switching Applications Preliminary Features · · Package

Ordering number : ENN6936 ENN6936 CPH6351 CPH6351 P-Channel Silicon MOSFET CPH6351 CPH6351 Ultrahigh-Speed Switching Applications Preliminary Features · · Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2151A [CPH6351 CPH6351] 0.15 2.9 5 4 0.6 6 0.2 · 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 2 3 0.95 0.7 0.9 1 0.2 0.6 1.6 2.8 0.05 Specifications SANYO : CPH6 0.4 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID Drain Current (Pulse) -3 PW10µs, duty cycle1% A -12 A Allowable Power Dissipation IDP PD 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=-20V, VGS=0 Ratings min typ max -20 Unit V -10 µA ±10 120 m 140 3.3 V 200 m -0.4 VDS=-10V, ID=-1.5A µA -1.4 90 VGS=±8V, VDS=0 VDS=-10V, ID=-1mA ID=-1.5A, VGS=-4V ID=-0.5A, VGS=-2.5V Marking : JE 4.8 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42501 TS IM TA-2650 TA-2650 No.6936-1/4 CPH6351 CPH6351 Continued from preceding page. Parameter Symbol Ratings Conditions Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Rise Time tr td(off) tf typ VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Turn-ON Delay Time min Turn-OFF Delay Time Fall Time Unit max Diode Forward Voltage 75 ns 70 ns 15 nC 1 nC VDS=-10V, VGS=-10V, ID=-3A IS=-3A, VGS=0 VSD ns See specified Test Circuit Qgd ns 65 VDS=-10V, VGS=-10V, ID=-3A VDS=-10V, VGS=-10V, ID=-3A Gate-to-Drain "Miller" Charge pF 15 See specified Test Circuit Qgs pF 100 See specified Test Circuit Qg Gate-to-Source Charge pF 200 See specified Test Circuit Total Gate Charge 400 3 nC -0.85 -1.5 V Switching Time Test Circuit VDD= -10V 0V -4V VIN ID= -1.5A RL=6.6 VIN PW=10µs D.C.1% VOUT D G P.G 50 CPH6351 CPH6351 ID - VDS -1.5 -1.0 VGS= -1.5V 25°C 75°C Ta= - -4 -3 -2 25 °C -1 -0.5 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 Drain-to-Source Voltage, VDS - V -0.9 -1.0 0 -1.0 -1.5 -2.0 -2.5 Gate-to-Source Voltage, VGS - V IT03108 IT03108 RDS(on) - VGS 200 -0.5 Ta =7 -2 5°C 5°C .0V -2 Drain Current, ID - A -2.0 -5 -4.0 -10.0V -8.0 V Drain Current, ID - A -2.5 ID - VGS -6 VDS= -10V V -3 .0V -2 .5V -6.0V -3.0 25°C S -3.0 IT03109 IT03109 RDS(on) - Ta 200 180 Static Drain-to-Source On-State Resistance, RDS(on) - m Static Drain-to-Source On-State Resistance, RDS(on) - m Ta=25°C 160 140 -1.5A 120 ID= -0.5A 100 80 60 40 20 0 0 -1 -2 -3 -4 -5 -6 -7 -8 Gate-to-Source Voltage, VGS - V -9 -10 IT03110 IT03110 180 2.5V 160 , 0.5A 140 = -VGS -I D= .0V 120 I D= 100 A, -1.5 = -4 VGS 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature, Ta - °C 120 140 160 IT03111 IT03111 No.6936-2/4 CPH6351 CPH6351 C 5° -2 3 2 = Ta 25 C 5° °C 7 1.0 7 5 -1.0 7 5 3 2 -0.1 7 5 3 2 2 Ta=7 5°C -0.01 7 5 3 2 3 0.1 -0.01 -0.001 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 IT03112 IT03112 Drain Current, ID - A 0 -0.2 -0.4 -0.6 -0.8 -1.0 IT03113 IT03113 Ciss, Coss, Crss - VDS 2 f=1MHz VDD= -10V VGS= -4V 1000 Ciss, Coss, Crss - pF td(off) 100 tf 7 -1.2 Diode Forward Voltage, VSD - V SW Time - ID 2 Switching Time, SW Time - ns VGS=0 -25°C 7 Forward Current, IF - A Forward Transfer Admittance, yfs - S 10 5 IF - VSD -10 7 5 3 2 VDS= -10V 25°C yfs - ID 2 5 tr 3 7 5 Ciss 3 Coss 2 Crss 2 100 td(on) 7 5 10 -0.1 2 3 5 7 2 -1.0 3 Drain Current, ID - A VGS - Qg 2 -10 7 5 -8 -6 -4 -2 2 4 6 8 10 12 14 Total Gate Charge, Qg - nC 16 IT03116 IT03116 PD - Ta 2.0 Allowable Power Dissipation, PD - W 3 2 1.6 1.5 -6 -8 -10 -12 -14 IT03115 IT03115 ASO IDP= -12A 100µs 1m s 10 ID= -3A m 1 DC 00m op s er ati o -1.0 7 5 s n 3 2 Operation in this area is limited by RDS(on). -0.1 7 5 3 2 0 -4 Drain-to-Source Voltage, VDS - V VDS= -10V ID= -3A 0 -2 IT03114 IT03114 Drain Current, ID - A Gate-to-Source Voltage, VGS - V -10 0 5 Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm) -0.01 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 2 3 IT03117 IT03117 Drain-to-Source Voltage, VDS - V M ou nt ed on ac er 1.0 am ic bo ar d( 90 0m m2 !0 0.5 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 160 IT03118 IT03118 No.6936-3/4 CPH6351 CPH6351 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2001. Specifications and information herein are subject to change without notice. PS No.6936-4/4