CPH5821 ENN7701 MCH3312 SBS004 TA-100874 --30V --10V --15V IT03212 IT03213 - Datasheet Archive

 

Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

 

CPH5821 CPH5821 Ordering number : ENN7701 ENN7701 CPH5821 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features · · DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET (MCH3312 MCH3312) and a Schottky Barrier Diode (SBS004 SBS004) contained in one package facilitating high-density mounting. [MOSFET] · 4V drive. [SBD] · Short reverse recovery time. · Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) -30 IDP PD Allowable Power Dissipation PW10µs, duty cycle1% V -2 ID Drain Current (Pulse) V ±20 A -8 A 0.9 Mounted on a ceramic board (600mm2!0.8mm) 1unit W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 1 A Surge Forward Current IFSM 10 A [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Junction Temperature Tj -55 to +125 °C Storage Temperature Tstg -55 to +125 °C Marking : QX Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504 TS IM TA-100874 TA-100874 No.7701-1/5 CPH5821 CPH5821 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0 VDS=-30V, VGS=0 -30 V -1 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) yfs RDS(on)1 ±10 VGSS=±16V, VDS=0 VDS=-10V, ID=-1A Cutoff Voltage Forward Transfer Admittance VDS=-10V, ID=-1mA -1.2 1.2 µA µA -2.6 2.0 V S ID=-1A, VGS=-10V ID=-500mA, VGS=-4V 110 145 m RDS(on)2 Ciss 205 290 m VDS=-10V, f=1MHz 200 pF Output Capacitance Coss VDS=-10V, f=1MHz 47 pF Reverse Transfer Capacitance Crss VDS=-10V, f=1MHz 32 pF Turn-ON Delay Time td(on) See specified Test Circuit 7.2 ns Rise Time tr td(off) See specified Test Circuit 2.9 ns See specified Test Circuit 21 ns tf See specified Test Circuit 8.7 ns Qg VDS=-10V, VGS=-10V, ID=-2A 5.5 nC Gate-to-Source Charge Qgs nC Qgd VDS=-10V, VGS=-10V, ID=-2A VDS=-10V, VGS=-10V, ID=-2A 0.98 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=-2A, VGS=0 VR VF 1 IR=1mA IF=0.5A VF 2 IF=1A VR=6V Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge 0.82 nC -0.85 -1.5 V 0.30 0.35 0.35 0.40 V 500 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 15 Interterminal Capacitance IR C VR=10V, f=1MHz, 1 cycle Reverse Recovery Time trr V IF=IR=100mA, See specified Test Circuit. Package Dimensions unit : mm 2171 4 5 0.15 3 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 2.8 1.6 0.6 0.05 1 2 Top view 2 0.4 0.4 0.9 0.2 0.95 0.7 1 ns Electrical Connection 0.6 5 pF 15 0.2 2.9 42 V 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No.7701-2/5 CPH5821 CPH5821 Switching Time Test Circuit [MOSFET] trr Test Circuit VDD= -15V VIN [SBD] 0V -10V Duty10% 50 100 10 100mA PW=10µs D.C.1% 10µs G 10mA D 100mA ID= -1A RL=15 VOUT VIN -5V P.G 50 [MOSFET] [MOSFET] V VDS=10V -4.5 -4.0 -0.8 -2.5 -2.0 -1.5 -1.0 -0.4 °C -25° C VGS= -3.0V -3.0 5°C -1.2 -3.5 Ta= 7 5V . -3 Drain Current, ID - A -1.6 Drain Current, ID - A ID - VGS -5.0 -4. 0 -10. 0V -6.0 V ID - VDS -2.0 trr CPH5821 CPH5821 (MOSFET) S 25 -0.5 0 0 -0.1 0 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 0 -1.0 IT03212 IT03212 Drain-to-Source Voltage, VDS - V RDS(on) - VGS [MOSFET] 400 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 IT03213 IT03213 Gate-to-Source Voltage, VGS - V RDS(on) - Ta [MOSFET] 400 Static Drain-to-Source On-State Resistance, RDS(on) - m 250 -1.0A 200 ID= -0.5A 150 100 50 -2 -4 -8 -10 -12 -14 -16 -18 -20 Forward Current, IF - A 5 3 °C 25 2 1.0 = Ta 7 5 -2 °C 75 °C 5 3 1.0 I D= - 100 50 -40 -20 0 2 3 5 7 -0.1 2 3 5 7 -1.0 Drain Current, ID - A 2 3 5 7 -10 IT03216 IT03216 20 40 60 80 100 IF - VSD 120 140 160 IT03215 IT03215 [MOSFET] VGS=0 3 2 -1.0 7 5 3 2 -0.1 7 5 3 2 2 0.1 -0.01 V = -10 A, V GS 150 -10 7 5 VDS=10V 7 -0 I D= 200 Ambient Temperature, Ta - °C IT03214 IT03214 Gate-to-Source Voltage, VGS - V yfs - ID [MOSFET] 10 Forward Transfer Admittance, yfs - S -6 V = -4 VGS .5A, 250 0 -60 0 0 300 -0.01 -0.2 -0.3 -0.4 -0.5 -0.6 -25°C 300 350 25°C 350 Ta=7 5°C Static Drain-to-Source On-State Resistance, RDS(on) - m Ta=25°C -0.7 -0.8 -0.9 -1.0 Diode Forward Voltage, VSD - V -1.1 -1.2 IT03217 IT03217 No.7701-3/5 CPH5821 CPH5821 SW Time - ID 2 3 [MOSFET] f=1MHz Ciss 2 7 5 3 Ciss, Coss, Crss - pF Switching Time, SW Time - ns 100 Ciss, Coss, Crss - VDS [MOSFET] VDD= -15V VGS= -10V td(off) 2 10 tf td(on) 7 5 tr 3 100 7 5 Coss Crss 3 2 2 1.0 -0.1 10 2 3 5 7 2 -1.0 3 Drain Current, ID - A 5 VGS - Qg -10 [MOSFET] Drain Current, ID - A -5 -4 -3 -2 0 0 1 2 3 4 5 6 Total Gate Charge, Qg - nC -1.0 7 5 3 2 -0.1 7 5 -25 -30 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 1unit -0.01 -0.01 2 3 5 7-0.1 2 3 5 7-1.0 2 3 5 7 -10 Drain-to-Source Voltage, VDS - V IT03220 IT03220 PD - Ta 1.0 Allowable Power Dissipation, PD - W ID= -2A 3 2 -1 -20 s 0µ 10 -6 -15 DC -7 -10 s 1m s m 10 s n 0m atio 10 er op 3 2 -8 -5 IT03219 IT03219 Drain-to-Source Voltage, VDS - V ASO [MOSFET] 10µs IDP= -8A -10 7 5 VDS= -10V ID= -2A -9 Gate-to-Source Voltage, VGS - V 0 IT03218 IT03218 2 3 5 7-100 IT06771 IT06771 [MOSFET] 0.9 M ou 0.8 nt ed on ac er 0.6 am ic bo ar d 0.4 (6 00 m m2 ! 0. 8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta - °C IT06772 IT06772 IF - VF [SBD] 3 =1 Ta 2 0° C 3 C 5° 2 50 °C 10 0.1 °C 7 5 75 Forward Current, IF - A °C 25 7 5 Reverse Current, IR - mA 2 1.0 3 2 0.01 IR - VR 100 7 5 3 2 [SBD] Ta=125°C 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 Forward Voltage, VF - V 0.4 0.5 IT00622 IT00622 0 5 10 Reverse Voltage, VR - V 15 IT00623 IT00623 No.7701-4/5 PF(AV) - IO 0.7 (1) Rectangular wave =60° (2) Rectangular wave =120° (3) Rectangular wave =180° (4) Sine wave =180° (1) 0.6 0.5 [SBD] (2) (4) (3) Rectangular wave 0.3 0.2 360° Sine wave 180° 360° 1.0 0 0 0.2 0.4 0.6 0.8 1.2 Average Forward Current, IO - A IFSM - t Surge Forward Current, IFSM(Peak) - A 12 [SBD] f=1MHz 0.4 0.1 C - VR 5 Interterminal Capacitance, C - pF Average Forward Power Dissipation, PF(AV) - W CPH5821 CPH5821 1.4 IT00624 IT00624 3 2 100 7 5 3 2 10 1.0 2 3 5 7 10 Reverse Voltage, VR - V 2 IT00625 IT00625 [SBD] Current waveform 50Hz sine wave Is 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t - s 3 5 7 1.0 2 3 IT00626 IT00626 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7701-5/5