CPH3338 11205PE TB-00000789 --15V --10V IT08950 IT08948 IT08949 IT08951 IT08953

No. N 8 1 7 4 N CPH3338 P MOS 4V Absolute Maximum Ratings / Ta=25 DC VDSS VGSS ID IDP PD Tch Tstg - 30

CPH3338 CPH3338 No. N 8 1 7 4 N CPH3338 CPH3338 P MOS 4V Absolute Maximum Ratings / Ta=25 DC VDSS VGSS ID IDP PD Tch Tstg - 30 unit V ± 20 - 3.5 V A - 14 1.0 A W 150 - 55 150 PW 10µs, duty cycle 1% (900mm2 × 0.8mm) Electrical Characteristics / Ta=25 V(BR)DSS IDSS ID= - 1mA, VGS=0 VDS= - 30V, VGS=0 IGSS VGS(off) VGS= ± 16V, VDS=0 VDS= - 10V, ID= - 1mA yfs RDS(on)1 VDS= - 10V, ID= - 2A ID= - 2A, VGS= - 10V RDS(on)2 RDS(on)3 Ciss Coss min typ max - 30 unit -1 V µA ± 10 - 2.6 µA V 4 57 74 S m ID= - 1A, VGS= - 4.5V ID= - 1A, VGS= - 4V 101 118 141 165 m m VDS= - 10V, f=1MHz VDS= - 10V, f=1MHz 566 101 pF pF - 1.2 2.4 VDS= - 10V, f=1MHz 84 11 pF ns Crss td(on) tr td(off) 13 49 ns ns tf 36 ns YN () 370-0596 11 11007 / 11205PE 11205PE TS IM TB-00000789 TB-00000789 No.8174-1/4 CPH3338 CPH3338 min Qg Qgs Qgd VDS= - 10V, VGS= - 10V, ID= - 3.5A VDS= - 10V, VGS= - 10V, ID= - 3.5A VDS= - 10V, VGS= - 10V, ID= - 3.5A VSD typ 11.7 IS= - 3.5A, VGS=0 unit : mm unit max nC 2.04 2.64 nC nC - 0.86 - 1.2 V 2152A VDD= -15V VIN 0V -10V 2.9 0.2 0.15 ID= -2A RL=7.5 VIN 0.6 0.4 3 D 2.8 1.6 VOUT PW=10µs D.C.1% 0.05 0.6 G 2 1 1 : Gate 2 : Source 3 : Drain CPH3338 CPH3338 P.G 50 S 0.7 0.9 0.2 1.9 SANYO : CPH3 ID - VDS VDS= -10V 0V -4 . -4. 5 -5.0 -3.0 -1.5 -1.0 -2.0 -1.5 -1.0 25° C -0.5 -0.5 VGS= -2.5V 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 , RDS(on) - m , VDS - V -0.9 Ta=25°C 180 160 -2A 140 ID= -1A 120 100 80 60 40 20 0 0 -2 -4 -6 -8 -10 -12 -14 -16 , VGS - V -1 -18 -20 IT08950 IT08950 -2 -3 -4 , VGS - V IT08948 IT08948 RDS(on) - VGS 200 0 -1.0 , RDS(on) - m 0 0 -25°C -3.0V -2.5 Ta=7 5°C -2.0 , ID - A V -6.0 -8.0V V -2.5 -10.0 , ID - A -3.0 ID - VGS -3.5 V V -3.5 IT08949 IT08949 RDS(on) - Ta 200 V -4.0 S= , VG .5V -1A = -4 I D= VGS , -1A I D= 150 100 = -10V , V GS 2A I D= -50 0 -60 -40 -20 0 20 40 60 80 , Ta - °C 100 120 140 160 IT08951 IT08951 No.8174-2/4 CPH3338 CPH3338 2 =°C 75 Ta 3 2 0.1 7 5 5 7 -0.01 2 3 5 7-0.1 2 3 5 7-1.0 2 3 , ID - A 5 7 -10 -0.001 -0.3 -0.4 -0.5 5 -0.7 -0.8 -0.9 -1.0 -1.1 IT08953 IT08953 Ciss, Coss, Crss - VDS 1000 VDD= -15V VGS= -10V 7 -0.6 , VSD - V IT08952 IT08952 SW Time - ID 1000 f=1MHz 7 Ciss 5 Ciss, Coss, Crss - pF 3 2 100 td(off) 7 5 tf 3 2 td(on) 3 2 5 3 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 IT08954 IT08954 , ID - A 0 3 2 VDS= -10V ID= -3.5A , ID - A -8 -7 -6 -5 -4 -3 -2 -10 7 5 6 8 10 , Qg - nC 12 IT08956 IT08956 PD - Ta 1.2 -12 -14 ID= -3.5A -16 -18 -20 IT08955 IT08955 10 10µs 10 0µ 1m s s m D C 10 s 0m s op er at io n Operation in this area is limited by RDS(on). 3 2 3 2 4 -10 IDP= -14A -1.0 7 5 -1 2 -8 ASO -0.1 7 5 0 -6 3 2 -2 0 -4 , VDS - V VGS - Qg -10 -9 Crss 7 10 7 5 -0.01 Coss 100 tr , SW Time - ns -0.1 7 5 3 2 -0.01 7 5 3 2 3 2 0.01 -0.001 2 3 , VGS - V -1.0 7 5 3 2 -25° C C 5° 1.0 7 5 VGS=0 Ta= 75° C °C 25 , IF - A , yfs - S 3 2 IF - VSD -10 7 5 3 2 VDS= -10V 25° C yfs - ID 10 7 5 Ta=25°C 1 (900mm2×0.8mm) -0.01 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 , VDS - V 2 3 5 IT08957 IT08957 , PD - W 1.0 (9 00 m m2 × 0.8 m m ) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 , Ta - °C 120 140 160 IT08958 IT08958 No.8174-3/4 CPH3338 CPH3338 MOSFET PS No.8174-4/4