CNY75 0805/IEC 950/EN 0860/IEC 0303/IEC CNY75A/ CNY75B/ CNY75C/ CNY75A CNY75B - Datasheet Archive

 

CNY75(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The

 

TELEFUNKEN Semiconductors CNY75 CNY75(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75 CNY75(G) Series consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. The elements are mounted on one leadframe in coplanar technique, providing a fixed distance between input and output for highest safety requirements. 95 10531 95 10532 Applications Circuits for safe protective separation against electrical shock according to safety class II. (reinforced isolation): D for application class I - IV at main voltage 300 V; D for application class I - III at main voltage 600 V according to VDE 0884, table 2, suitable for: Switch mode power supplies, computer peripheral interface, microprocessor system interface, line receiver. These couplers perform safety functions according to following equipment standards: D VDE 0884 Optocoupler providing protective separation. D VDE 0804 Telecommunication apparatus and data processing. Rev. A1: 20.09.1995 D VDE 0805/IEC 0805/IEC 950/EN 950/EN 60950 Office machines (applied for reinforced isolation for main voltages 400 VRMS). D VDE 0860/IEC 0860/IEC 65 Safety for mains operated electronic and related apparatus for household. 1 (10) CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Features According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Creeping current resistance according to VDE 0303/IEC 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm D Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File No: E 76222 D CTR offered in 3 groups D Isolation materials according to UL94­VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: therefore extra low coupling capacity typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR Order Schematic Part Numbers CNY75A/ CNY75A/ CNY75 CNY75(G)A/ CNY75 CNY75(G)AS CNY75B/ CNY75B/ CNY75 CNY75(G)B/ CNY75 CNY75(G)BS CNY75C/ CNY75C/ CNY75 CNY75(G)C/ CNY75 CNY75(G)CS G = Leadform 10.16 mm S = Waterproofed device Remarks For those couplers, where instead of standard soldering/ cleaning process a pure water cleaning process is being used, we suggest our waterproofed construction. In this case please order the part numbers with the suffix "S". The waterproofed construction, corresponding with the coupling system "S", and does not belong to the part number itself. Pin Connection B C E 6 5 4 1 2 3 A (+) C (­) n.c. 95 10805 Suffix: CTR-Ranking 63 to 125% 100 to 200% 160 to 320% Standard parts are marked with the letter "A". This coupling system indicator "A" or "S" is in a separate (second) line of the marking. 2 (10) Rev. A1: 20.09.1995 CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp 10 ms Tamb 25°C Symbol VR IF IFSM Ptot Tj Value 5 60 3 100 125 Unit V mA A mW °C Symbol VCBO VCEO VECO IC ICM Ptot Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 ­55 to +100 ­55 to +125 260 Unit kV mW °C °C °C Output (Detector) Parameters Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp 10 ms Tamb 25°C Coupler Parameters AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A1: 20.09.1995 Test Conditions Tamb 25°C 2 mm from case, t 10 s 3 (10) CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Maximum Safety Ratings1) (according to VDE 0884) Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature 1) This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by protective circuits in the applications. Derating Diagram 275 250 Psi (mW) 225 200 175 150 125 100 75 Isi (mA) 50 25 0 0 95 10923 4 (10) 25 50 75 100 125 150 175 Tamb ( °C ) Rev. A1: 20.09.1995 CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions IF = 50 mA IR = 100 mA VR = 0, f = 1 MHz Symbol VF V(BR) Cj Min. Typ. 1.25 Max. 1.6 Unit V V pF Test Conditions IC = 100 mA Symbol V(BR)CBO Min. 90 Max. Unit V IC = 1 mA V(BR)CEO 90 V IE = 100 mA V(BR)ECO 7 V 5 50 Output (Detector) Parameters Collector base breakdown voltage Collector emitter breakdown voltage Emitter collector breakdown voltage Collector emitter cut-off current VCE = 20 V, IF = 0 Typ. ICEO 150 nA Max. Unit kV 0.3 V Coupler Parameters AC isolation test voltage (RMS) Collector emitter saturation voltage Cut-off frequency Coupling capacitance IC/IF IC/IF Rev. A1: 20.09.1995 Test Conditions f = 50 Hz, t = 1 s IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 10 mA Type Symbol VIO Min. 3.75 Typ. VCEsat fc CNY75A CNY75A CNY75B CNY75B CNY75C CNY75C CNY75A CNY75A CNY75B CNY75B CNY75C CNY75C 110 kHz Ck CTR CTR CTR CTR CTR CTR 0.3 pF 0.15 0.3 0.6 0.63 1 1.6 1.25 2 3.2 5 (10) CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Switching Characteristics (Typical Values) VS = 5 V Type RL = 100 kW, see figure 1 RL = 1 kW, see figure 2 ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 4.5 0.3 2.7 3.0 10 10.0 25.0 20 td[ms] 2.0 tr[ms] 2.5 2.5 3.0 5.5 0.3 3.7 4.0 10 16.5 20.0 10 2.8 CNY75A CNY75A CNY75 CNY75(G)A CNY75 CNY75(G)AS CNY75B CNY75B CNY75 CNY75(G)B CNY75 CNY75(G)BS CNY75C CNY75C CNY75 CNY75(G)C CNY75 CNY75(G)CS 4.2 7.0 0.3 4.7 5.0 10 11 37.5 10 IF 0 +5V IF I C = 10 mA ; R G = 50 W tp T adjusted through input amplitude = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W R L w 1 MW C L v 20 pF 100 W 95 10891 Figure 1. Test circuit, non-saturated operation IF +5V IF 0 IC R G = 50 W tp T = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW R L w 1 MW C L v 20 pF 95 10897 Figure 2. Test circuit, saturated operation 6 (10) Rev. A1: 20.09.1995 CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Insulation Rated Parameters (according to VDE 0884) Parameters Routine test Lot test Partial discharge (sample test) test voltage Test Conditions 100%, ttest = 1 s tTr = 10 s, ttest = 60 s see figure 3 VIO = 500 V VIO = 500 V, Tamb 100°C VIO = 500 V, Tamb 150°C Insulation resistance Symbol Vpd VIOPTM Min. 1.6 6 Typ. Max. Unit kV kV Vpd 1.3 kV RIO 1012 W RIO 1011 W RIO 109 W (only construction test) VIOTM V t1, t2 = 1 up to 10 s t3, t4 = 1 s Vpd VIOWM VIORM 0 t3 t1 94 9225 t2 ttest = 60 s t4 tstress = 62 s tTr =10 s t Figure 3. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A1: 20.09.1995 7 (10) CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Dimensions in mm Leadform 10.16. mm (G-type) 8.6 8.4 7.82 7.42 2.55 2.45 4.6 4.2 7.7 4.3 4.1 2.5 0.35 0.25 2.54 0.58 0.48 10.36 9.96 1.54 6 5 4 6.4 6.2 1 2 3 0.65 5.08 8.8 8.4 8 (10) technical drawings according to DIN specifications 95 10932 Rev. A1: 20.09.1995 CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Dimensions in mm 8.6 8.4 7.82 7.42 2.55 2.45 4.9 4.5 3.3 2.54 4.3 4.1 0.35 0.25 9.6 8.4 0.58 0.48 1.54 6 5 4 6.4 6.2 1 2 3 0.65 5.08 technical drawings according to DIN specifications 95 10931 8.8 8.4 Rev. A1: 20.09.1995 9 (10) CNY75 CNY75(G) Series TELEFUNKEN Semiconductors Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) Rev. A1: 20.09.1995