CMT70N03 - Datasheet Archive

 

N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low

 

CMT70N03 CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS(ON) Typ. ID Inductive Switching Curves 30V 6.6m 71A Improved UIS Ruggedness PIN CONFIGURATION SYMBOL TO-252 D GATE DRAIN SOURCE Front View 1 2 3 G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol VDSS Drain to Current Continuous Tc = 25, VGS@10V (Note 2) 30 V ID Drain to Source Voltage (Note 1) Value Unit 71 A Continuous Tc = 100, VGS@10V (Note 2) ID 45 Pulsed Tc = 25, VGS@10V (Note 3) IDM 284 Gate-to-Source Voltage Continue VGS ±20 V Total Power Dissipation PD 66 W 0.53 W/ Derating Factor above 25 Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 V/ns TJ, TSTG -55 to 150 Single Pulse Avalanche Energy EAS TBD mJ Maximum Lead Temperature for Soldering Purposes TL 300 TPKG 260 Operating Junction and Storage Temperature Range Maximum Package Body for 10 seconds THERMAL RESISTANCE Symbol RJC Parameter Junction-to-case RJA Junction-to-ambient (PCB Mount) Junction-to-ambient RJA 2004/04/13 Min Typ Max 1.9 Units /W 50 /W 62 /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150 Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air Champion Microelectronic Corporation Page 1 CMT70N03 CMT70N03 N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number Package CMT70N03 CMT70N03 TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT70N03 CMT70N03 Characteristic Symbol Min VDSS Typ Max 30 Units OFF Characteristics Drain-to-Source Breakdown Voltage V (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient, VDSS/TJ 0.05 V/ (Reference to 25, ID = 1mA) Drain-to-Source Leakage Current IDSS µA (VDS = 30 V, VGS = 0 V, TJ = 25) 1 (VDS = 24 V, VGS = 0 V, TJ = 125) 10 IGSS 100 nA IGSS Gate-to-Source Forward Leakage -100 nA 3.0 V (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage, 1.0 (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance, (Note 5) RDS(on) (VGS = 10 V, ID = 15A) m 6.6 (VGS = 4.5 V, ID = 12A) 8.0 12 Forward Transconductance (VDS = 20V, ID = 12A) (Note 5) gFS 30 S (VDS = 15 V, VGS = 0 V, Ciss 2600 f = 1.0 MHz) Coss 480 pF pF Crss 230 pF Qg 50 Qg 25 nC nC Gate-to-Source Charge Qgs 7.5 nC Gate-to-Drain Charge Qgd 8.5 nC td(on) TBD Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Total Gate Charge (VGS = 4.5 V) (VDS = 15 V, ID = 12 A) (Note5, 6) Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 15 V, ID = 15 A, VGS = 10 V, RG = TBD) (Note 5,6) tr TBD ns ns td(off) TBD ns tf TBD ns Source-Drain Diode Characteristics Continuous Source Current (Body Diode ) IS 71 A A Integral pn-diode in MOSFET(Note 2) Pulse Source Current (Body Diode) ISM 284 Forward On-Voltage (IS = 12 A, VGS = 0 V) VSD 1.0 Forward Turn-On Time (IF = 12 A, VGS = 0 V, trr 30 ns di/dt = 100A/µs) (Note 5) Qrr 40 nC Reverse Recovery Charge 2004/04/13 Champion Microelectronic Corporation V Page 2 CMT70N03 CMT70N03 N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25 to 150 Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt