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CMS301

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Abstract: 0.120 0.250 0.500 0.750 1.00 2.00 3.00 CMS301 CMS302 CMS302 CMS303 CMS303 CMS304 CMS304 CMS305 CMS305 CMS306 CMS306 CMS307 CMS307 ... Original
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1 pages,
57.29 Kb

CMS106 CMS100 cms206 CMS301 CMS305 CMS307 CMS308 CMS412 CMS201 CMS205 CMS203 CMS410 CMS207 CMS204 CMS200 datasheet abstract
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Abstract: PRELIMINARY MICRON I TECHNOLOGY, INC. 16 MEG: x4, x8 SDRAM MT48LC4M4A1 MT48LC4M4A1 /A2 S - 2 Meg x 4 x 2 banks MT48LC2M8A1 MT48LC2M8A1 /A2 S -1 Meg x 8 x 2 banks SYNCHRONOUS DRAM FEATURES · PCIOO-compliant functionality · Fully synchronous; all signals registered on positive edge of system clock · Internal pipelined operation; colum n address can be changed every clock cycle · Internal banks for hiding row access/precharge: 4 M eg x 4 - 2 M eg x 4 x 2 banks architecture with 11 row, 10 colum n addresses pe ... OCR Scan
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46 pages,
3224.03 Kb

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