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Part Manufacturer Description Datasheet BUY
LTC6244HMS8#TRA1PBF Linear Technology Dual 50MHz, Low Noise, Rail-to-Rail, CMOS Op Amp visit Linear Technology - Now Part of Analog Devices
LTC1044ACS8#PBF Linear Technology LTC1044A - 12V CMOS Voltage Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC660CS8#PBF Linear Technology LTC660 - 100mA CMOS Voltage Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC1044AIS8#PBF Linear Technology LTC1044A - 12V CMOS Voltage Converter; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC660CS8#TRPBF Linear Technology LTC660 - 100mA CMOS Voltage Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC660CS8 Linear Technology LTC660 - 100mA CMOS Voltage Converter; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

CMOS 5408

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: - BIT(524288 - WORD B Y8-B IT)C M 0S STATIC RAM M ITS U B IS H I DESCRIPTION The M 5M 5408 is 4 1 9 4 3 0 4 -bit CMOS static RAM organized as 524288 words by 8-b it, fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery results in a high density and low power static RAM. The M 5M 5408 is designed for memory , - up are important design objectives. The M 5M 5408 is offered in a 3 2 - pin plastic dual-in-line -
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ALI chipset Ali 3516

Abstract: SEM 2006 Three-PLL Clock Generator 128K x 8 CMOS EPROM 256K x 8 CMOS EPROM 16K x 8 CMOS EPROM 32K x 8 CMOS EPROM 64K x 8 CMOS EPROM 8K x 8 EPROM 128K x 8 High-Speed CMOS EPROM 32K x 8 High-Speed CMOS EPROM 64K x 8 High-Speed CMOS EPROM General Purpose Clock Synthesizer/Driver Multi-Level Pipeline Register 8 , 2K x 8 Reprogrammable PROM CMOS Programmable Synchronous State Machine Asynchronous Registered EPLD Universal Synchronous EPLD UltraLogic 3.3V Very High Speed 1K (3K) Gate CMOS FPGA UltraLogic 3.3V Very
Cypress Semiconductor
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sss 5411 AT

Abstract: NJU6432BF _NJU6432B 1/2x3. â'" T" -í LCD K 7 'T s kjug432b u, tí-v > h ? -í 7'co lcd ir i/2 x^-x 1" -t'eli tz lcd â¡ k^-f^&tf-tzyy > h k7-f/7 h ? p -y 2mhz max) â'¢m^mimm oñíts^) â'¢ p i?-y max 6.5v â'¢ c-mos*it â'¢ qfp64 NJU6432BF , O seg5, D102 o d103 o seg52 di04 o Dios o seg53 â'¢ftBif.fitT o o 5-408 NJU6432B « s E
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SEG23 sss 5411 AT mkt 9 NJU6432 SEG53 SEG30 SEG24 SEG52 HJUG432B

74ACT11472

Abstract: Signetics 74AC/ACT11472 9-Wide Transceiver with Dual Enable; 3-State Objective Specification ACL Products FEATURES · 3-State buffers · Output capability: ±24 mA · CMOS (AC) and TTL (ACT) voltage level inputs · 5 00 Incident wave switching · Center-pln Vc(, and ground con figuration to mtnimize , /ACT11472 high-performance CMOS devices combine very high speed and high output drive comparable to the most , Low-to-High transition High-impedance state X = Don't care July 29,1989 5-408 Slgnettcs ACL
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74ACT11472 CT11472

CMOS 5408

Abstract: HC640A G W A V E F O R M S MOTOROLA HIGH-SPEED CMOS LOGIC DATA 5-408 MC54/74HC640A TEST CIRCUITS , Inverting Bus Transceiver High-Performance Silicon-Gate CMOS The M C 54/74HC640A is identical in pinout to , HC643A. Output Drive Capability: 15 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2 to 6 V Low Input Current: 1 pA High Noise Immunity Characteristic of CMOS Devices , Chapter 4, of the Motorola High-Speed CMOS Logic Data Book - DL129/R3. MOTOROLA HIGH-SPEED CMOS LOGIC
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HC640A CMOS 5408 LS640 HC245A 751D-03 C74HCXXXAN MC54HCXXXAJ

m5m5408p

Abstract: CMOS 5408 -WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M 5 M 5 4 0 8 is 4 1 9 4 3 0 4 -b it CM OS static R AM , double metal C M OS technology. The use o f thin film transistor (T F T ) load oells and CMOS periphery , CONFIGURATION (TOP VIEW) H | - A I 5 '| " ADDRESS low power static A 1 7 f IN P U T M 5M 5408 , , -55LL,-70LL,-1 OLL 4194304-BIT (542488-WORD BY 8-BIT) CMOS STATIC RAM FUNCTION The operation mode o , OLL 4194304-BIT (542488-WORD BY 8-BIT) CMOS STATIC RAM ABSOLUTE MAXIMUM RATINGS Symbol Vcc Vi Vo
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m5m5408p 408P 5M5408 M5M5408P RT-55L 524288-WORD
Abstract: ig u r e 1 F igu re 2 MOTOROLA HIGH-SPEED CMOS LOGIC DATA 5-408 MC54/74HC640A T E S T , NOTE: Information on typical parametric values can be found in Chapter 4. MOTOROLA HIGH-SPEED CMOS , OUTPUT ENABLE - - ± > - MOTOROLA HIGH-SPEED CMOS LOGIC DATA 5-409 -
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C54/74HC640A C54HCXXXAJ C74HCXXXADW
Abstract: S u p e r te x : in c H V 5308 H V 5408 . 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier 44 Lead Quad Plastic Gullwing Die 44 J-Lead Quad Ceramic Chip Carrier (MIL-STD-883 Processed*) HV5308 HV5308DJ , ­ bilities such as driving plasma panels, vacuum fluorescent, or large matrix LCD displays. â¡ CMOS -
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HV5308PJ HV5308PG HV5308X RBHV5308DJ HV5408 HV5408DJ

NZ70008H

Abstract: STEPS 30175 DATA SHEET PRODUCT LETTER CB-C9VX/VM 0.35-Micron CMOS Cell-Based ASICs Description Figure 1 , and 5V tolerant CMOS Interfaces Power sensitive applications make use of the low power dissipation , completely to 3.3 V, CB-C9VM has full 5 V CMOS interfaces available. Applying two additional process steps , ) Ti-Silicide CMOS technology Ultra high density cell structure · Optimised 3.3 Volt transistor , higher integration density compared to nonsilicided CMOS processes. Signal wiring is done in two or
NEC
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GB-MK14 NZ70008H STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX NL-5612 S-18322 F-78142 E-28007 I-20124 I-00139

FZH115B

Abstract: fzh261 .2003 Digital I.C.s, FZ, CMOS HIGH NOISE IMMUNITY LOGIC CMOS FZ series 4000 & 74HC4000 SERIES For , sales@electrovalue.co.uk web: www.electrovalue.co.uk Mar.2003 Memories, Telecom I.C.s CMOS STATIC RAMS Type 6116 6264 62256 62256SM 51008 5408 Suffix ALP-10 ALP-10 ALP-70 ALJ-10 AFP-70L FP , Description ISDN exchange power controller Advanced CMOS Frame Aligner Memory time switch CMOS Memory time
Electro Value
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FZH115B fzh261 FZK105 FZH131 FZJ111 FZH115 74INTEGRATED 16-DIL

NEC 2933

Abstract: CMOS 5408 NEC Electronics Inc. CB-C9VX 3.3-Volt, 0.35-Micron Cell-Based CMOS ASIC Preliminary Description NEC's CB-C9VX CMOS cell-based ASIC family facilitates the design of complete cell-based silicon , -micron effective) silicon gate CMOS process with silicidation. This advanced process greatly reduces the number of , Benefits · 0.35-micron (drawn), Ti-Silicide CMOS technology · Ultra-high density cell structure · , CB-C9 ASIC ASIC (3V) CMOS I/F TTL I/F (3V) 3V Device 3V Device 3V CLK 3V Interface
NEC
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NEC 2933 a1241 nec V830 mcu transistor 13009 V810 130090 A12411EU2V0DS01

DB110

Abstract: FREE MM 5402 SCHEMATIC  FEATURES â'¢ 12-Bit Resolution â'¢ 20 MSPS Sampling Rate â'¢ On Chip Bandgap Reference â'¢ DNL = ±0.4 LSB, INL = ±1.7 LSB â'¢ Internal S/H Function â'¢ Single Power Supply: 5V â'¢ Differential Input â'¢ 100% Digital Test Coverage â'¢ Low Power: 360mW â'¢ Latch-Up Free XRD6622 CMOS , standard 5V CMOS process, this part offers excellent performance, low power consumption and latch-up free , 5-408 T
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DB110 FREE MM 5402 SCHEMATIC d662 10MHZ DB10 HP5082-2835 20MSPS 50/0PEN 6601ES1 XRD6622EVAL
Abstract: Zero Pow er CMOS Hard A rray Logic ZHALâ"¢24A Series Features/ Benefits Ordering Information â'¢ Zero standby power PART NUMBER â'¢ Low power operation PACKAGE â'¢ High-speed CMOS , attributes are achieved through the use of Monolithic Memoriesâ'™ advanced high-speed CMOS process. Now , pplies to pins 14-23 fo r DIP (pins 17, 18, 20-27 fo r PLCC). 8. C[_ = 5 pF. 5-408 £ 1 , CMOS Hard Array Logic ZHALâ"¢24A Series ZH A L 24A Evaluation # 4 Features/ Benefits Logic -
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ZHAL12L10A ZHAL14L8A 20L8/ 20R8/ 20R6/ ZHAL16L6A
Abstract: Zero Power CMOS Hard Array Logic ZHALTM24A Series Features/ Benefits · Zero standby power · Low power operation · High-speed CMOS technology · HC and HCT compatible · 24-pln SKINNYDIP® and 28-pln PLCC , high-speed CMOS process. Now system designers have the option of using a ZHAL device that matches fast PAL , test these values without suitable equipment. 2. JE D E C standard no. 7 for high-speed CMOS devices. 3 , 5-408 M onollthla RÎ3M em o ries ÎI ZHAL24A Series 20L10A, 20X1OA, 20X8A, 20X4A Operating -
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ZHAL18L4A ZHAL20L2A ZHAL20C1A ZHAL20L8A ZHAL20R8A ZHAL20R6A

4096 RAM

Abstract: P140 TOSHIBA TM P47C454A CMOS 4-BIT MICROCONTROLLER TMP47C454AN The 47C454A is a high performance 4-bit single chip microcomputer based on the TLCS-47 CMOS series with a DTMF generator and a , data from RAM and stores to Accumulator. 260290 5-408 This Material Copyrighted By Its Respective , Ion-Von CMOS It port Vdd = 4 5 V Ta = 25°C \ \ NJ Von fi (V) In. (pA) -800 -600 -400 -200 0 IlL-ViN CMOS H port VDD = 5.5V Ta = 25"C \ \ \ v
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SDIP30 4096 RAM P140 P141 BM47215B SD1P30 47C400A

HL 941

Abstract: P140 TOSHIBA TMP47C454A CMOS 4-BIT MICROCONTROLLER TMP47C454AN The 47C454A is a high performance 4-bit single chip microcomputer based on the TLCS-47 CMOS series with a DTMF generator and a , Accumulator. 260290 5-408 TOSHIBA TMP47C454A 3. PERIPHERAL HARDWARE FUNCTION 3.1 t/O Ports The 47C454A , 80 CO -40 40 80 (°C) I()N (MA) -400 -300 -200 -100 0 IOH-VoH CMOS R port Vdd - 4.5 V Ta , CMOS Upon Vdd=5.5V Ta = 25°C \ \ V|N fi (V) l()l. (mA) 8 6 4 2 0
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HL 941 rom 512x4

ADF4113

Abstract: 3-wire serial 5V CMOS (MSB) 010111111000000010010011 (LSB) (MSB) 001000100101111000100101 (LSB , -51.76 -48.35 -53.38 -55.12 1941 -48.86 -54.08 -52.35 -47.00 -51.22 -52.98
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ADF4113 KSN-1941A-119 DK1042 2150P-12 TR-F28 PL-249 TB-567
Abstract: ADF4113 3-wire serial 5V CMOS (MSB) 010111111000000010010011 (LSB) (MSB) 001000100101111000100101 (LSB , -48.86 -54.08 -52.35 -47.00 -51.22 -52.98 ® RoHS compliant IF/RF MICROWAVE Mini-Circuits
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ENV03T2
Abstract: â"¦ 4.20 V 0.95 V 4.35 5.25 V 0.40 V ADF4113 3-wire serial 5V CMOS (MSB , -54.77 -53.37 -52.76 -54.08 -54.19 -54.20 -53.95 -53.82 -52.47 -51.69 -54.09 -54.00 Mini-Circuits
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KSN-976A-119 DK801

12695

Abstract: 8582 K -145 dBc/Hz 50 2.80 V 0.60 V 2.75 3.45 V 0.40 V ADF4113 3-wire serial 3.3V CMOS , -71.97 -53.32 -63.72 -69.56 -54.08 - - - - - - - - - -64.41
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KSN-860A-119 12695 8582 150P-12 TB-567-1
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