CM50DU-24H 31K/W - Datasheet Archive

 

CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM50DU-24H IC . 50A VCES

 

MITSUBISHI IGBT MODULES CM50DU-24H CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM50DU-24H CM50DU-24H IC . 50A VCES . 1200V Insulated Type 2-elements in a pack APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 80 ±0.25 4 G1E1 12 4 4 11 18 E2 G2 C1 E2 C2E1 2­6.5 MOUNTING HOLES 23 23 48 CM 24 17 13 7 13.5 2.5 16 TAB C2E1 E2 21.2 +1 30 ­0.5 LABEL #110. t=0.5 C1 G1 E1 25 7.5 16 2.5 E2 G2 3­M5NUTS 12mm deep CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM50DU-24H CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Conditions Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage - Mounting torque - Weight ELECTRICAL CHARACTERISTICS Symbol Note 1. 2. 3. 4. 5. 6. (Note 1) (Note 1) Unit 1200 ±20 50 100 50 100 400 ­40 ~ +150 ­40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Contact thermal resistance Ratings - - Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value VCE = VCES, VGE = 0V Min - Limits Typ - Max 1 IC = 5mA, VCE = 10V 4.5 6 7.5 V - - - - - - - - - - - - - - - - - 2.9 2.85 - - - 187 - - - - - - 0.28 - - 0.5 3.7 - 7.5 2.6 1.5 - 80 200 150 350 3.2 300 - 0.31 0.7 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W - 0.07 - K/W Item ICES Rth(c-f) VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 50A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3 Resistive load IE = 50A, VGE = 0V IE = 50A, die / dt = ­100A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of = 0.9[W/(m · K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM50DU-24H CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20 (V) 100 15 VCE = 10V 12 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 100 Tj = 25°C 75 11 50 10 9 25 8 0 0 2 4 6 8 75 50 25 Tj = 25°C Tj = 125°C 0 10 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 25 50 75 10 8 6 IC = 100A 4 IC = 50A IC = 20A 2 0 100 Tj = 25°C 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 101 Tj = 25°C CAPACITANCE Cies, Coes, Cres (nF) 3 GATE-EMITTER VOLTAGE VGE (V) 102 7 5 3 2 101 7 5 7 5 Cies 3 2 100 7 5 3 2 Coes Cres 10­1 7 5 3 2 3.5 VGE = 0V 10­2 ­1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 3 1.0 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM50DU-24H CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (ns) 7 Tj = 125°C 5 REVERSE RECOVERY TIME trr (ns) 103 tf 3 2 td(off) 102 7 5 td(on) tr 3 2 101 7 5 VCC = 600V VGE = ±15V RG = 6.3 3 2 100 0 10 2 3 5 7 101 2 5 5 3 3 2 2 trr 102 7 5 Irr 3 2 2 3 5 7 101 100 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10­3 2 3 5 710­2 2 3 5 710­1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j ­ c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j ­ c) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 2 7 5 2 COLLECTOR CURRENT IC (A) Per unit base = Rth(j ­ c) = 0.31K/W 31K/W 100 101 3 101 0 10 5 7 102 3 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 ­ di /dt = 100A /µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 7 5 3 2 3 2 10­1 10­1 10­2 10­2 10­3 10­3 10­5 2 3 5 710­4 2 3 5 7 10­3 7 5 3 2 2 100 Per unit base = Rth(j ­ c) = 0.7K/W 7 5 3 2 3 2 7 5 3 2 TIME (s) 10­1 10­1 10­2 10­2 10­3 7 5 3 2 7 5 3 2 10­3 2 3 5 710­2 2 3 5 710­1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 10­3 10­5 2 3 5 710­4 2 3 5 7 10­3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 50A 15 VCC = 400V VCC = 600V 10 5 0 0 50 100 150 200 250 GATE CHARGE QG (nC) Feb. 2009 4