CM200DU-24NFH Amperes/1200 CM200DU-24NF - Datasheet Archive

 

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODTM NFH-Series Module 200 Amperes/1200

 

CM200DU-24NFH CM200DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODTM NFH-Series Module 200 Amperes/1200 Amperes/1200 Volts TC MEASUREMENT POINT A Y D K K K Y F E2 G2 U E2 H C1 J G1 E1 C2E1 Z AB Q Q P UU H AC M AA EB U AD G N S - NUTS (3 TYP) T - (4 TYP) W V W V V X R Y M C LABEL L G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 C 1.14+0.04/-0.0129.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Dimensions Q R S T U V W X Y Z AA AB AC AD Inches 0.98 0.11 M6 Metric 0.26 Dia. 0.002 0.71 0.28 0.16 0.3 0.325 0.624 0.709 0.69 1.012 Millimeters 25.0 2.8 M6 Dia. 6.5 0.5 18.0 7.0 4.0 7.5 8.25 15.85 18.0 17.5 25.7 Description: Powerex IGBTMODTM Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DU-24NFH CM200DU-24NFH is a 1200V (VCES), 200 Ampere Dual IGBTMODTM Power Module. Current Rating Amperes VCES Volts (x 50) CM Rev. 12/09 Type 200 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM200DU-24NFH CM200DU-24NFH Dual IGBTMODTM NFH-Series Module 200 Amperes/1200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-24NF CM200DU-24NF Units Junction Temperature Tj ­40 to 150 °C Storage Temperature Tstg ­40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 200* Amperes ICM 400* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current* (TC = 25°C) IE 200* Amperes IEM Peak Emitter Current* 400* Amperes Maximum Collector Dissipation (TC = 25°C, Tj 150°C) PC 830 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' 150°C) PC 1300 Watts Mounting Torque, M6 Main Terminal - 40 in-lb Mounting Torque, M6 Mounting - 40 in-lb - 400 Grams VISO 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Collector-Cutoff Current Test Conditions Min. Typ. Max. Units mA ICES VCE = VCES, VGE = 0V - - 1.0 VGE = VGES, VCE = 0V - - 0.7 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C - 5.0 6.5 Volts IC = 200A, VGE = 15V, Tj = 125°C - 5.0 - Volts Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V - 900 - nC Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V - - 3.5 Volts Min. Typ. Max. Units - - 32 nf - - 2.7 nf - - 0.6 nf Gate Leakage Current IGES Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions Cies VCE = 10V, VGE = 0V - - 300 ns VCC = 600V, IC = 200A, - - 80 ns td(off) VGE1 = VGE2 = 15V, RG = 1.6, - - 500 ns tf Inductive Load Switching Operation, - - 150 ns Diode Reverse Recovery Time* trr IE = 200A - - 250 ns Diode Reverse Recovery Charge* Qrr - 7.5 - µC tr * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 12/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM200DU-24NFH CM200DU-24NFH Dual IGBTMODTM NFH-Series Module 200 Amperes/1200 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference - - 0.15 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference - - 0.24 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q - - 0.095 °C/W Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/2 Module, - - 0.14 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied - 0.04 - °C/W 1.6 - 16 Point per Outline Drawing Point per Outline Drawing Per IGBT 1/2 Module, TC Reference Point Under Chips TC Reference Point Under Chips Contact Thermal Resistance External Gate Resistance RG OUTPUT CHARACTERISTICS (TYPICAL) 300 12 200 11 10 100 9 0 8 0 2 4 6 8 300 200 100 0 10 9 VGE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 13 15 COLLECTOR CURRENT, IC, (AMPERES) 400 14 VGE = 20V Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 5 0 15 10 7 6 5 4 3 2 1 0 20 VGE = 15V Tj = 25°C Tj = 125°C 8 0 100 200 300 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 6 EMITTER CURRENT, IE, (AMPERES) IC = 400A 8 IC = 200A 4 IC = 80A 2 102 Tj = 25°C Tj = 125°C Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 400 COLLECTOR-CURRENT, IC, (AMPERES) 102 Cies 101 Coes 100 Cres VGE = 0V 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Rev. 12/09 20 101 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM200DU-24NFH CM200DU-24NFH Dual IGBTMODTM NFH-Series Module 200 Amperes/1200 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tf tr 101 VCC = 600V VGE = ±15V RG = 1.6 Tj = 125°C Inductive Load 100 101 102 Irr trr 102 102 VCC = 600V VGE = ±15V RG = 1.6 Tj = 25°C Inductive Load 101 101 103 101 103 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) td(off) td(on) 102 GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 IC = 200A 16 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 1200 1400 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 1.6 Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 101 102 103 102 101 VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive Load C Snubber at Bus 100 100 101 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive Load C Snubber at Bus GATE RESISTANCE, RG, () 4 100 10-1 Err 101 102 102 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 Err 101 100 101 VCC = 600V VGE = ±15V RG = 1.6 Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, () NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth · (NORMALIZED VALUE) COLLECTOR CURRENT, IC, (AMPERES) 100 100 102 ESW(on) ESW(off) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 EMITTER CURRENT, IE, (AMPERES) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) COLLECTOR CURRENT, IC, (AMPERES) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.15°C/W (IGBT) Rth(j-c) = 0.24°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Rev. 12/09