CM200DU-24F Amperes/1200 - Datasheet Archive

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 200

CM200DU-24F CM200DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 200 Amperes/1200 Amperes/1200 Volts TC MEASURING POINT A D F T (4 TYP.) G2 B E CM C2E1 H E2 C L E2 J E1 C1 H G1 U Q P Q N K K K Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G S - NUTS (3 TYP) R M C L G2 E2 RTC C2E1 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking C1 E2 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches A 4.25 108.0 L 0.87 22.0 B 2.44 62.0 M 0.33 8.5 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 Millimeters N 0.10 2.5 D 3.66±0.01 93.0±0.25 P 0.85 21.5 E 1.88±0.01 48.0±0.25 Q 0.98 25.0 F 0.67 17.0 R 0.11 2.8 G 0.16 4.0 S M6 M6 H 0.24 6.0 T 0.26 Dia. J 0.59 15.0 U 0.002 K 0.55 Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-24F CM200DU-24F is a 1200V (VCES), 200 Ampere Dual IGBTMODTM Power Module. 14.0 6.5 Dia. 0.05 Type Current Rating Amperes VCES Volts (x 50) CM 200 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24F CM200DU-24F Trench Gate Design Dual IGBTMODTM 200 Amperes/1200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-24F CM200DU-24F Units Tj Junction Temperature -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Peak Emitter Current* IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 830 Watts Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb 400 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj 150°C) Emitter Current* (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Min. Typ. Max. ICES VCE = VCES, VGE = 0V Test Conditions 1 Units mA IGES VGE = VGES, VCE = 0V 40 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Voltage IC = 200A, VGE = 15V, Tj = 25°C 1.8 2.4 Volts IC = 200A, VGE = 15V, Tj = 125°C 1.9 Volts Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V 2200 Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 3.2 nC Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24F CM200DU-24F Trench Gate Design Dual IGBTMODTM 200 Amperes/1200 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Coes VCE = 10V, VGE = 0V Min. Typ. Max. Cies Output Capacitance Test Conditions 78 3.4 Units nf nf Reverse Transfer Capacitance Cres 2 nf Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 200A, 300 ns Load Rise Time tr VGE1 = VGE2 = 15V, 80 ns Switch Turn-off Delay Time td(off) RG = 1.6, 500 ns Times Fall Time tf Inductive Load 300 ns Diode Reverse Recovery Time* trr Switching Operation 200 ns Diode Reverse Recovery Charge* Qrr IE = 200A 12.2 µC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference Units 0.15 °C/W 0.18 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference 0.08 0.020 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied °C/W * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-24F CM200DU-24F Trench Gate Design Dual IGBTMODTM 200 Amperes/1200 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 300 5 3 10 9.5 9 200 8.5 100 8 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 11 15 Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2 1 0 1 2 3 0 4 4 3 IC = 400A IC = 200A 2 IC = 80A 1 0 0 0 Tj = 25°C 100 200 300 0 400 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 102 Cies 102 101 Coes 100 td(off) tf SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C td(on) 102 tr 101 VCC = 600V VGE = ±15V RG = 1.6 Tj = 125°C Inductive Load Cres VGE = 0V 101 0 1.0 2.0 3.0 10-1 10-1 4.0 100 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, VGE 103 VCC = 600V VGE = ±15V RG = 1.6 Tj = 25°C Inductive Load Irr trr 102 101 101 102 102 EMITTER CURRENT, IE, (AMPERES) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) 103 IC = 200A 16 VCC = 400V VCC = 600V 12 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth · (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 4 100 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 101 Per Unit Base Rth(j-c) = 0.15°C/W (IGBT) Rth(j-c) = 0.18°C/W (FWDi) Single Pulse TC = 25°C 10-1 10-2 8 4 10-1 10-2 10-3 0 0 500 1000 1500 2000 2500 3000 GATE CHARGE, QG, (nC) 10-5 10-4 10-3 10-3 TIME, (s) 4