CM200DU-12F Amperes/600 - Datasheet Archive

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 200

CM200DU-12F CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 200 Amperes/600 Amperes/600 Volts P - NUTS (3 PLACES) TC MEASURING POINT A D N Q (2 PLACES) E2 C1 E2G2 CM E C2E1 F B G G1E1 H M K K F J Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. R C L G2 E2 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking RTC C2E1 C1 E2 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches A 3.70 94.0 J 0.53 13.5 B 1.89 48.0 K 0.91 23.0 L 1.13 28.7 M 0.67 17.0 N 0.28 7.0 C Millimeters 1.18 +0.04/-0.02 30.0 +1.0/-0.5 D 3.15±0.01 E 0.43 80.0±0.25 11.0 Millimeters F 0.16 4.0 P M5 0.71 18.0 Q 0.26 6.5 H 0.02 0.5 R 0.16 4.0 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMODTM Power Module. M5 G Applications: AC Motor Control UPS Battery Powered Supplies Type Current Rating Amperes VCES Volts (x 50) CM 200 12 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F CM200DU-12F Trench Gate Design Dual IGBTMODTM 200 Amperes/600 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-12F CM200DU-12F Units Tj Junction Temperature -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Peak Emitter Current* IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj 150°C) Pc 590 Watts Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M6 Mounting 40 in-lb 310 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current* (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Min. Typ. Max. Units Collector-Cutoff Current Symbol ICES VCE = VCES, VGE = 0V Test Conditions 1 mA Gate Leakage Voltage IGES VGE = VCES, VCE = 0V 20 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C 1.6 2.2 Volts IC = 200A, VGE = 15V, Tj = 125°C 1.6 Volts Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V 1240 nC Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 2.6 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F CM200DU-12F Trench Gate Design Dual IGBTMODTM 200 Amperes/600 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Coes VCE = 10V, VGE = 0V Min. Typ. Cies Output Capacitance Test Conditions Max. 54 3.6 Units nf nf Reverse Transfer Capacitance Cres 2 nf Inductive Turn-on Delay Time td(on) VCC = 300V, IC = 200A, 120 ns Load Rise Time tr VGE1 = VGE2 = 15V, 100 ns Switch Turn-off Delay Time td(off) RG = 3.1, 350 ns Times Fall Time tf Inductive Load 250 ns Diode Reverse Recovery Time* trr Switching Operation 150 ns Diode Reverse Recovery Charge* Qrr IE = 200A 3.8 µC Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference Units 0.21 °C/W 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference 0.13 0.035 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied °C/W * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F CM200DU-12F Trench Gate Design Dual IGBTMODTM 200 Amperes/600 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 11 15 10 3 9.5 VGE = 20V 300 9 200 8.5 100 8 7.5 0 0 1 2 3 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C Tj = 125°C 2 1 0 4 Tj = 25°C 4 3 IC = 400A 2 IC = 200A IC = 80A 1 0 0 100 200 300 0 400 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 102 Cies 102 101 td(off) tf SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 101 Coes 100 102 td(on) tr 101 VCC = 300V VGE = ±15V RG = 3.1 Tj = 125°C Inductive Load Cres VGE = 0V 100 0 1.0 2.0 3.0 10-1 10-1 4.0 100 101 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, VGE 102 Irr t rr 101 101 VCC = 300V VGE = ±15V RG = 3.1 Tj = 25°C Inductive Load 100 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) 102 IC = 200A 16 VCC = 200V VCC = 300V 12 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth · (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 4 100 100 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 100 10-3 10-2 10-1 100 101 Per Unit Base Rth(j-c) = 0.21°C/W (IGBT) Rth(j-c) = 0.35°C/W (FWDi) Single Pulse TC = 25°C 10-1 4 10-1 10-2 8 10-2 10-3 0 0 600 1200 GATE CHARGE, QG, (nC) 1800 10-5 10-4 10-3 10-3 TIME, (s) 4