CM1800HC-34N /-15V - Datasheet Archive

 

CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) CM1800HC-34N ¡IC . 1800A ¡VCES

 

HVIGBT CM1800HC-34N CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) CM1800HC-34N CM1800HC-34N ¡IC . 1800A ¡VCES . 1700V ¡ ¡1 ¡AISiC ¡ IGBT : CSTBTTM ¡ DC mm 130±0.5 57±0.25 4 - M8 NUTS 57±0.25 4(C) 2(C) 3(E) 1(E) C 3 140±0.5 124±0.25 40±0.2 2 20±0.1 4 G E 1 C E CIRCUIT DIAGRAM G 10.35±0.2 3 - M4 NUTS 10.65±0.2 6 - 7 MOUNTING HOLES 48.8±0.2 +1 28 ­0 38 +1 ­0 18±0.2 5±0.2 screwing depth min. 7.7 screwing depth min. 16.5 15±0.2 40±0.2 5.2±0.2 LABEL 29.5±0.5 61.5±0.3 HVIGBT CM1800HC-34N CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) VCES VGES IC ICM IE 2 IEM 2 PC3 Tj Top Tstg Viso tpsc G-E, Tj = 25°C C-E, Tj = 25°C TC = 75°C 1 1700 ±20 1800 3600 1800 3600 10000 ­40 ~ +150 ­40 ~ +125 ­40 ~ +125 4000 V V A A A A W °C °C °C V 10 µs 1 TC = 25°C, IGBT , AC1 VCC = 1200V, VCES 1700V, VGE = 15V Tj = 125°C ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC 2 td(on) tr Eon td(off) tf Eoff trr 2 Irr 2 Qrr2 Erec 2 - 6 - VCE = VCES, VGE = 0V, Tj = 25°C IC = 180mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1800A, VGE = 15V, Tj = 25°C IC = 1800A, VGE = 15V, Tj = 125°C mA 6.0 4 4 VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C IE = 1800A, VGE = 0V, Tj = 25°C 4 IE = 1800A, VGE = 0V, Tj = 125°C 4 VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9, Tj = 125°C, Ls = 100nH VCC = 850V, IC = 1800A, VGE = ±15V RG(off) = 2.2, Tj = 125°C, Ls = 100nH VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9, Tj = 125°C, Ls = 100nH jmax T IEIEMVECtrrQrrdie / dt FWDi j T 150 2 7.0 8.0 V - - - - - - - - - - - - - - - - - - - - 2.15 2.40 264 14.4 4.2 10.2 2.60 2.30 1.00 0.40 550 1.20 0.30 560 1.00 720 420 280 0.5 2.80 - - - - - 3.30 - - - - - - - - - - - µA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse HVIGBT CM1800HC-34N CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Rth(j-c)Q Rth(j-c)R Rth(c-f) IGBT FWDi grease = 1W/m·K - - 12.5 - - 28.0 - - 11.0 K/kW K/kW K/kW M - CTI da ds LC-E(int) RC-E(int) M8 M6 M4 IGBT TC = 25°C - 7.0 20.0 - 6.0 3.0 - 3.0 1.0 - - 0.8 - - 600 - - 19.5 - - 32.0 - - 16 - - 0.14 N m kg - mm mm nH m 3 HVIGBT CM1800HC-34N CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) 3600 3600 Tj = 125°C VCE = 20V VGE = 15V 3000 3000 VGE = 12V 2400 (A) (A) VGE = 20V VGE = 10V 1800 1200 2400 1800 1200 600 600 VGE = 8V 0 0 1 2 3 4 Tj = 25°C Tj = 125°C 5 0 6 0 2 4 6 8 10 (V) (V) 12 5 5 4 (V) (V) VGE = 15V 3 2 1 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 600 1200 1800 2400 (A) 4 3000 3600 Tj = 25°C Tj = 125°C 0 0 600 1200 1800 2400 (A) 3000 3600 HVIGBT CM1800HC-34N CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) 103 20 VCC = 850V, IC = 1800A Tj = 25°C 7 5 Cies 3 16 (V) 2 (nF) 102 7 5 3 2 Coes 101 7 5 2 8 4 Cres 3 12 VGE = 0V, Tj = 25°C f = 100kHz 100 -1 10 2 3 5 7 100 2 3 5 7 101 0 5 7 102 2 3 0 2 4 6 8 10 12 (V) 2000 (µC) - - 3000 VCC = 850V, VGE = ±15V RG(on) = 0.9, RG(off) = 2.2 Tj = 125°C, (mJ/pulse) Eoff 1200 VCC = 850V, IC = 1800A, VGE = ±15V Tj = 125°C, 2500 1600 (mJ/pulse) 14 800 Eon 400 Erec Eon 2000 1500 Eoff 1000 500 Erec 0 0 600 1200 1800 2400 (A) 3000 3600 0 0 2 4 6 8 10 12 () 5 HVIGBT CM1800HC-34N CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) - 101 7 5 3 600 VCC = 850V, VGE = ±15V RG(on) = 0.9, RG(off) = 2.2 Tj = 125°C, VCC = 850V, VGE = ±15V RG(on) = 0.9 Tj = 125°C, 500 Qrr td(off) 100 7 5 (µC) (µs) 2 tr td(on) tf 3 2 10-1 400 300 200 7 5 100 3 2 10-2 2 10 2 3 5 7 103 2 3 5 0 7 104 0 600 1200 1800 2400 (A) RBSOA 1.2 5000 VCC 1200V, VGE = +/-15V /-15V Tj = 125°C, RG(off) 2.2 Single Pulse, TC = 25°C Rth(j­c)Q = 12.5K/kW Rth(j­c)R = 28K/kW 4000 0.8 (A) 1.0 3600 (A) IGBT, 3000 0.6 0.4 3000 2000 1000 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 (s) 6 0 0 500 1000 1500 (V) 2000 www.MitsubishiElectric.co.jp/semiconductors