CJD200 CJD210 - Datasheet Archive

 

CJD210 PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200,

 

CJD200 CJD200 NPN CJD210 CJD210 PNP COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200 CJD200, CJD210 CJD210 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING CODE: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JC Thermal Resistance JA ELECTRICAL CHARACTERISTICS: (TC=25ºC unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V ICBO VCB=40V, TC=125ºC IEBO VEB=8.0V BVCEO IC=10mA 25 VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=2.0A, IB=200mA VCE(SAT) IC=5.0A, IB=1.0A VBE(SAT) IC=5.0A, IB=1.0A VBE(ON) VCE=1.0V, IC=2.0A hFE VCE=1.0V, IC=500mA 70 hFE VCE=1.0V, IC=2.0A 45 hFE VCE=2.0V, IC=5.0A 10 fT VCE=10V, IC=100mA, f=10MHz 65 Cob VCB=10V, IE=0, f=0.1MHz (CJD200 CJD200) Cob VCB=10V, IE=0, f=0.1MHz (CJD210 CJD210) 40 25 8.0 5.0 10 1.0 12.5 1.4 UNITS V V V A A A W W -65 to +150 10 89.3 °C °C/W °C/W MAX 100 100 100 0.3 0.75 1.8 2.5 1.6 UNITS nA µA nA V V V V V V 180 80 120 MHz pF pF R1 (26-August 2002) Central TM Semiconductor Corp. CJD200 CJD200 NPN CJD210 CJD210 PNP COMPLEMENTARY SILICON POWER TRANSISTOR DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (26-August 2002)