2-08L-B CJ5935DC - Datasheet Archive

 

DFNWB3×2-08L-B Power management Dual-transistors DFNWB3×2-08L-B CJ5935DC Dual P-channel MOSFET FEATURES TrenchFET

 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B 2-08L-B Power management Dual-transistors DFNWB3×2-08L-B 2-08L-B CJ5935DC CJ5935DC Dual P-channel MOSFET FEATURES TrenchFET Power MOSFET Low rDS(on) Dual and Excellent Power Handing in A compact Footprint Applications Load switch PA switch Battery switch Marking: pin connections: MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Units VDSS Drain-Source voltage -20 V VGS Gate-Source Voltage ±8 V ID Continuous Drain Current -3 A IDM Drain Current-Pulsed -15 A PD Power Dissipation 1.1 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 RJA Thermal Resistance, Junction-to-Ambient 110 /W MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test Condition Min VGS = 0V, ID = -250µA Typ Max -20 Units Off Characteristics Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS =-16V,VGS = 0V Gate ­Source leakage current IGSS V VGS = ±8V, VDS = 0V -1 µA ±100 nA -1.0 V VGS = -4.5V, ID = -3A 86 m VGS = -2.5V,ID = -2.5A 121 m VGS = -1.8V,ID = -0.6A 171 m On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS(th) RDS(on) gFS VGS = VDS, ID =-250µA VDS = -10V, ID = -3A -0.4 8 S Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 30 50 ns 65 VGEN = -4.5V, VDD = -10V, ID = -1A, RG=6, RL=10 ns ns Turn-Off Fall Time tf 40 ns Total Gate Charge Qg 8.5 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-10V, ID =-3A, VGS =-4.5V 0.91 nC 1.6 nC Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage VSD Typical Characteristics VGS = 0V, IS = -0.9A -1.2 V