NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| CGY60 | Infineon Technologies | GaAs MMIC |
10 pages, |
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| CGY60 | Infineon Technologies | Amplifier, Low Noise Pre-Amplifier For Mobile Communication |
10 pages, |
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| CGY60 | Siemens Semiconductors | Transistors |
1 pages, |
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| CGY60 | Siemens Semiconductors | GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
7 pages, |
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| CGY60 | Siemens Semiconductors | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
37 pages, |
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| CGY60 | Siemens Semiconductors | GaAs MMIC |
7 pages, |
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| CGY60E6327 | Infineon Technologies | Low noise preamplifier for mobile com... |
10 pages, |
Original | |
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| CGY60E6688 | Infineon Technologies | Low noise preamplifier for mobile com... |
10 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SAW GP-DSP GOLD PMB 2705 GBBC PMB 2900 Baseband Speech Decoder D A A Equalizer Hard" " Voiceband Channel Decoder Hard" " D A 900 MHz / 1.8 GHz PMB 2401 1F Q LO D RF Synth. LO Baseband Voiceband D Speech Encoder A D Channel Encoder A GMSK RF VCO + Presc. IF Synth. RF-PLL Q D CGY60 / BEP420 BEP420 PMB 2306 Out. Stage A BAR63 BAR63 + BAR80 BAR80 4144-3015 1 2 3 4 5 6 7 8 9 * 0 ... | Original |
1 pages, |
sim gsm datasheet 80C166 BAR63 BAR80 BEP420 CGY60 CGY92 GMSK ITB05946 2306 GMSK gsm CGY120 RF encoder sim 900 datasheet abstract |
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| Abstract: Electrical characteristics of CGY60 in GSM application circuit TA = 25°C f=950MHz RS = , 15pF 1nF 15pF Ud 15pF in in out out CGY60 1800MHz actual size ( 20 x 20 mm ) CGY60 1800MHz GSM - application board: 1nF 27pF Ud 27pF 1nF 27pF 27pF in 15nH in Ud out out CGY60 900MHz actual size ( 20 x 20 mm ) CGY60 900MHz PCB - data ... | Original |
7 pages, |
Q62702G-39 mmic marking code MMIC marking 81 marking 478 mmic CGY60 B82412-A3150-M a3150 data sheet a3150 a3150 ic datasheet abstract |
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| Abstract: Respective Manufacturer SIEMENS GaAs MMIC CG Y 60 Electrical characteristics of CGY60 in GSM application , Noise-parameters f = 200MHz to 2GHz Ud >- Input 50 Ohm >- T I. J_ 6 5 CGY60 100p 100|> Output -c 50 Ohm ... | OCR Scan |
7 pages, |
Y 60 B82412-A3150-M CGY60 34B DBM MMIC marking CODE 74 Q62702G-39 MMIC marking code 132 a3150 marking 478 mmic a3150 ic datasheet abstract |
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| Abstract: 82c257 lsp 5502 2165-n PMB2905 MBF 233-3 ericsson 2308 IF Synth. RF-PLL Q D CGY60 / BEP420 BEP420 PMB 2306 Out. Stage A BAR63 BAR63 + BAR80 BAR80 ... | Original |
193 pages, |
csc 2314 OSC VCO 1785 1990 MHZ SMD circuit diagram wireless spy camera 82c258 20901-N V5.1 pmb 4220 piezo modulator circuit diagram Siemens pmb 4220 csc 2313 f QPSK reciever gsm modem pic interface block diagram pbc 05 ericsson datasheet abstract |
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| Abstract: Encoder A GMSK RF VCO + Presc. IF Synth. RF-PLL Q D CGY60 / BEP420 BEP420 PMB 2306 ... | Original |
208 pages, |
ADVANTAGES OF CASH BOX GUARD GSM home automation block diagram RF MODULE CIRCUIT DIAGRAM dect smd transistor cy 2309 Motorola transistor smd marking codes PSB 2165 H tm 2313 PEB 2235 TRANSISTOR SMD MARKING CODE 352 gsm modem pic interface block diagram Siemens pmb 4220 datasheet abstract |
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| Abstract: GaAs MMIC CGY 60 Data Sheet · Low noise preamplifier for mobile communication (PCN, DECT, GSM) in 2.7 V to 6 V systems · Biased monolithic microwave IC (MMIC) matched to 50 for 1.7 to 2 GHz · Easily matchable to 50 for lower frequencies (i.e. GSM-application) · No bias coil needed · Low noise figure and high gain (typ. NF = 1.9 dB, G = 12.5 dB @ 3 V, 1.85 GHz) · Low power consumption · Frequency range 200 MHz . 2.5 GHz ESD: Electrostatic discharge sensitive device, obse ... | Original |
10 pages, |
smd marking code vd B82412-A3150-M a3150 ic a3150 data sheet VD F1 SMD datasheet abstract |
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| Abstract: GaAs MMIC CGY 60 Data Sheet · · · · · · · Low noise preamplifier for mobile communication (PCN, DECT, GSM) in 2.7 V to 6 V systems Biased monolithic microwave IC (MMIC) matched to 50 W for 1.7 to 2 GHz Easily matchable to 50 for lower frequencies (i.e. GSM-application) No bias coil needed Low noise figure and high gain (typ. NF = 1.9 dB, G = 12.5 dB @ 3 V, 1.85 GHz) Low power consumption Frequency range 200 MHz . 2.5 GHz MW-6 ESD: Electrostatic discharge sensit ... | Original |
10 pages, |
UD smd marking code smd marking code vd MMIC marking CODE 74 B82412-A3150-M a3150 data sheet a3150 UD smd code a3150 UD smd code a3150 ic a3150 ic datasheet abstract |
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| Abstract: FACON MSE D m 34SbS03 0000015 T â- FCN FACON SEMICONOUCTEUFtS/SBMICONDUCTORS 23-09 moulded single phase bridges ponts monophasés montés 940 VRRM VRMS Id Max Fwd 'dsm/ lp per diode recom- on re- Voltage 'fsm @ VR Types mended sistive load Use (a) Ta - 25 °C Case max sur charge Fonction vF 'o 25 °C 125 °C résistive (V) (V) (A) (V) (A) (A) (mA) (mA) moulded bridges « 940 » ponts moulés 60 A Tcase = 90 °C BY 60 940 50 35 60 1 2 30 600 100 ... | OCR Scan |
1 pages, |
facon bf 34SbS03 facon bd facon datasheet abstract |
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| Abstract: Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Type Maximum Ratings i'os Vgs V V h mA P* mW Characteristics (TA gm F mS dB = 25 °C) Gaat dB ; GHz Package Lead Code CFY 77-08 3.5 2 60 180 65 0.7 10.5 12 MW-4 3 CFY 77-10 3.5 2 60 180 65 0.9 10 12 MW-4 3 GaAs Leistungs-FETs GaAs Power FETs Type Maximum Ratings Yds Vog V V h A -Plot W Characteristics (Tk = Fds = 3V: p, dB Ga at dBm dB 25 °C) / GHz Package Lead Code CLY 2 9 12 0.6 0.9 22.5 15 1.8 MW- ... | OCR Scan |
1 pages, |
MW-6 CLYS CLY 30 cfy siemens datasheet abstract |
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| Abstract: Discrete semiconductors GaAs MMICs increase operating and standby times of mobile phones When mobile communications terminals operate with 3-V technologies, there is no alternative to using low-noise and energy-saving components in the RF front end. Thanks to the extensive experience gained in the volume production of discrete GaAs transistors, costs have come down so far that attractively priced GaAs solutions with superior technical features have also achieved market success. lthou ... | Original |
4 pages, |
startac smd schottky diode s6 33 motorola 125 khz reader antenna dect pmb datasheet abstract |
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| Abstract: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner q Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies (e.g. with molded interconnection devices) call for sustained reduction in the size of components and packages alike. As a result of consistent development of small-scale integration and package miniaturization, the Semiconductor Group can now offer equipment manufacturers compact, easy-to- ... | Original |
5 pages, |
MMIC SOT 89 marking CODE bfr 49 smd transistor mmic sot 363 marking code 02 TRANSISTOR SMD CODE PACKAGE SOT323 RF NPN POWER TRANSISTOR C 10-50 GHZ BC 148 transistor smd rf transistor marking smd diode sod-323 marking code 31 smd code marking rf ft sot23 sot 23 smd transistor bc 847 transistor 313 smd datasheet abstract |
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| Abstract: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 AIGaAs/InGaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... | Original |
8 pages, |
SCT-595 cfy 14 cf sot-363 801C 121B GaAs FET cfy 14 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| No abstract text available www.datasheetarchive.com/download/71402412-145447ZC/cgy60.zip (cgy60.zip) |
Infineon | 08/09/2000 | 35.44 Kb | ZIP | cgy60.zip |
| S-Parameter Files: - Within this directory you are able to see the main operating point information within the filename: For bipolar transistors you have to read as follows: the filename XXAAABBB.S2P is coded: XX internal type definition AAA shows the voltage; V means Volt; the character stands instead of the decimal point ie. 10V means 10Volts; 1V0 means 1.0Volts www.datasheetarchive.com/download/71402412-145447ZC/cgy60.zip (README_BIAS.TXT) |
Infineon | 08/09/2000 | 35.44 Kb | ZIP | cgy60.zip |
| 69 CGY 60 B CGY 60 www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1591.htm |
Infineon | 26/10/2000 | 35.14 Kb | HTM | pro~1591.htm |
| Y7 MW-6 2 CGY60 Y6 MW-6 5 CGY62 CGY62 CGY62 CGY62 CL MW-6 1 CGY92 CGY92 CGY92 CGY92 Y www.datasheetarchive.com/files/infineon/ehdata/spar/cont_sho.txt |
Infineon | 26/11/1998 | 7.47 Kb | TXT | cont_sho.txt |
| SOT143 1 CGY52 CGY52 CGY52 CGY52 CK MW-7 1 CGY59 CGY59 CGY59 CGY59 Y7 MW-6 2 CGY60 Y6 MW www.datasheetarchive.com/download/16783613-166397ZC/cont_sho.doc |
Infineon | 26/11/1998 | 24 Kb | DOC | cont_sho.doc |
| CGY 195 CGY 40 CGY 50 CGY 52 CGY 59 CGY 60 CGY 62 CGY 94 CLY 10 CLY 15 www.datasheetarchive.com/files/siemens/index/listtypc.htm |
Siemens | 27/02/1998 | 8.94 Kb | HTM | listtypc.htm |
| ) - - - - 80 mW - - -55 - +150 Grad C - - - 8 V - - No CGY 60 PCN, DECT, GSM 200 . 2500 MHz - - - 9 m www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~287.htm |
Infineon | 19/10/2000 | 25.35 Kb | HTM | para~287.htm |
| ! SIEMENS Small Signal Semiconductors ! CGY60 ! GaAs Monolithic Microwave Integrated Circuit in MW-6 ! VDS = 3 V ID = 5 mA ! Common Source S-Parameters: August 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9900 -1.2 0.274 -74.6 0.0006 91.8 0.9990 -4.6 0.020 0.9810 -1.6 0.674 -83.1 0.0013 78.2 0.9760 -9.2 0.030 0.9750 -1 www.datasheetarchive.com/files/siemens/ehdata/spar/cgy60/y63v05m0.s2p |
Siemens | 10/08/1994 | 20.02 Kb | S2P | y63v05m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! CGY60 ! GaAs Monolithic Microwave Integrated Circuit in MW-6 ! VDS = 5 V ID = 5 mA ! Common Source S-Parameters: August 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9860 -1.3 0.343 -74.5 0.0009 90.2 0.9900 -4.7 0.020 0.9780 -1.7 0.847 -84.0 0.0012 76.9 0.9730 -9.0 0.030 0.9710 -2 www.datasheetarchive.com/files/siemens/ehdata/spar/cgy60/y65v05m0.s2p |
Siemens | 10/08/1994 | 20.02 Kb | S2P | y65v05m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! CGY60 ! GaAs Monolithic Microwave Integrated Circuit in MW-6 ! VDS = 6 V ID = 5 mA ! Common Source S-Parameters: August 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9850 -1.4 0.362 -74.5 0.0005 93.2 0.9890 -4.6 0.020 0.9770 -1.7 0.897 -84.1 0.0013 86.7 0.9720 -9.0 0.030 0.9700 -2 www.datasheetarchive.com/files/siemens/ehdata/spar/cgy60/y66v05m0.s2p |
Siemens | 10/08/1994 | 20.02 Kb | S2P | y66v05m0.s2p |