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CGH40025F Datasheet

Part Manufacturer Description PDF Type
CGH40025F Cree RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG Original
CGH40025F Cree 25 W, RF Power GaN HEMT Original
CGH40025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025 Original

CGH40025F

Catalog Datasheet MFG & Type PDF Document Tags

str w 6556 a

Abstract: str w 6556 vs. Output Power with Source and Load Impedances Optimized for P3dB Power in CGH40025F-TB VDD = , Fax: +1.919.313.5778 www.cree.com/wireless CGH40025F-TB Demonstration Amplifier Circuit Schematic CGH40025F-TB Demonstration Amplifier Circuit Outline 3-000544 REV1 CGH40025-TB Copyright © 2007 Cree , www.cree.com/wireless CGH40025F-TB Demonstration Amplifier Circuit Bill of Materials Designator , CGH40025F-TB Demonstration Amplifier Circuit Copyright © 2007 Cree, Inc. All rights reserved. The
Cree
Original
CGH40025 str w 6556 a str w 6556 str 6556 str 6708 STR 6553 CGH4002

str w 6554 a

Abstract: str 6554 Source and Load Impedances Optimized Power in CGH40025-TB SAT for P3dB in CGH40025F-TB VDD = 28 V , /wireless_appnotes.asp 2 Measured for the CGH40025F at PDISS = 28 W. 3 See also, the Power Dissipation De-rating , CGH40025Fand the CGH40025-TB 20 15 10 Amplitude (dB) 5 0 -5 -10 -15 Small Signal Gain Input , Drain Efficiency vs Frequency of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40025F in the CGH40025-TB CGH40025F in the CGH40025-TB VDD = 28 28 V, IDQ= 250 mA V, IDQ = 250 mA VDD =
Cree
Original
str w 6554 a str 6554 str w 6554 RO4350B RO4350 STR 6754 40025F

STR F 6168

Abstract: CGH40025 P3dB in CGH40025F-TB VDD = 28Vdd V,=I mA, Freq = 3.7 GHz 28 V,= Idq250 = 250 mA, Freq = 3.7 GHz DQ 15 , Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 Measured for the CGH40025F at , Loss vs Frequency Small Signal Gain and InputCGH40025-TB Return Loss of the CGH40025F in the 20 15 10 , , Gain, and Drain Efficiency vs Frequency of the CGH40025F in the CGH40025-TB CGH40025F in the , Swept CW Data of CGH40025 vs. Output Power with Source CW Data of CGH40025F vs Output Power with Source
Cree
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STR F 6168 CGH40025P

STR F 6168

Abstract: CGH40025F Optimized for PSAT Power in CGH40025-TB for P3dB in CGH40025F-TB VDD = 28Vdd =IDQ = 250 mA, Freq = 3.7 GHz , /wireless_appnotes.asp 2 Measured for the CGH40025F at PDISS = 28 W. 3 See also, the Power Dissipation De-rating , CGH40025Fand the CGH40025-TB 20 15 10 Amplitude (dB) 5 0 -5 -10 Small Signal Gain -15 Input , Drain Efficiency vs Frequency of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40025F in the CGH40025-TB CGH40025F in the CGH40025-TB VDD = 28 28 V, IDQ= 250 mA V, IDQ = 250 mA VDD =
Cree
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JESD22

STR F 6168 31 v power

Abstract: STR F 6168 Optimized for PSAT Power in CGH40025-TB for P3dB in CGH40025F-TB VDD = 28Vdd =IDQ = 250 mA, Freq = 3.7 GHz , /wireless_appnotes.asp 2 Measured for the CGH40025F at PDISS = 28 W. 3 See also, the Power Dissipation De-rating , CGH40025Fand the CGH40025-TB 20 15 10 Amplitude (dB) 5 0 -5 -10 Small Signal Gain -15 Input , Drain Efficiency vs Frequency of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40025F in the CGH40025-TB CGH40025F in the CGH40025-TB VDD = 28 28 V, IDQ= 250 mA V, IDQ = 250 mA VDD =
Cree
Original
STR F 6168 31 v power MAG-S11 STR F 6168 31 rt 0608

STR F 6168

Abstract: CGH40025-TB Optimized for PSAT Power in CGH40025-TB for P3dB in CGH40025F-TB VDD = 28Vdd =IDQ = 250 mA, Freq = 3.7 GHz , /wireless_appnotes.asp 2 Measured for the CGH40025F at PDISS = 28 W. 3 See also, the Power Dissipation De-rating , CGH40025Fand the CGH40025-TB 20 15 10 Amplitude (dB) 5 0 -5 -10 Small Signal Gain -15 Input , Drain Efficiency vs Frequency of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40025F in the CGH40025-TB CGH40025F in the CGH40025-TB VDD = 28 28 V, IDQ= 250 mA V, IDQ = 250 mA VDD =
Cree
Original
j326 hemt .s2p Cree Microwave
Abstract: with Source and Load Impedances Optimized Load Data of CGH40025F Optimized for PSAT Power in CGH40025-TB for P3dB in CGH40025F-TB VDD = 28Vdd =IDQ = 250 mA, Freq = 3.7 GHz 3.7 GHz V, 28 V, Idq = 250 , /wireless_appnotes.asp 3 Measured for the CGH40025F at PDISS = 28 W. 4 See also, the Power Dissipation De-rating , Small Signal Gain in Input Return Loss of the CGH40025Fand the CGH40025-TB 20 15 10 Amplitude (dB , , Gain, and Drain Efficiency vs Frequency of the CGH40025F in the CGH40025-TB CGH40025F in the Cree
Original

str w 6556

Abstract: str w 6556 a in CGH40025F-TB. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document , Note: 1 Measured for the CGH40025F at PDISS = 28 W. Electrical Characteristics (TC = 25 , Efficiency vs Frequency of the CGH40025F in the CGH40025-TB VDD = 28 V, IDQ = 250 mA 35 30 70 , ) Small Signal Gain and Return Loss vs Frequency of the CGH40025F in the CGH40025-TB 20 15 10 , HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH40025F 1 C8 J3,J4 CGH40025-TB Demonstration
Cree
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str F 6256 transistor 7893 10UF 470PF

transistor c3909

Abstract: pt 2358 CGH40025F_r4a ID=40025F3 Tcase=25 4.8 RTH=3.8 I_METER ID=AMP2 2 1 IND ID=L2 L=1.686 nH , maintaining output power. Reference Cree, Inc. proprietary large-signal model CGH40025F_r4a for Applied , of transistor drawn current. We will use the CGH40025F transistor in a 2 to 6 GHz broadband , phase of the design. The default thermal resistance is set for the CGH40025F at 4.8°C/watt. The , Cree CGH40025F GaN HEMT transistor. This device operates from a nominal 28 volt rail. The transistor
Cree
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transistor c3909 pt 2358 Voltmeter of38dBm transistor DB p16 Gan hemt transistor x band APPNOTE-006

transistor p98

Abstract: P99 transistor C=11.53 pF CGH40025F_r6 ID=40025F1 TLIN ID=TL1 Z0=47.54 Ohm EL=21 Deg F0=4000 M Hz , CGH40025F_r6 ID=40025F1 Tcase=25 RTH=4.8 I_METER ID=AMP1 2 IND ID=L3 L=0.6882 nH 1 CAP , CGH40025F_r6 for Applied Wave Research's Microwave Office generated the results in this application note , transistor drawn current. We will use the CGH40025F transistor in a 2 to 6 GHz broadband amplifier and , design. The default thermal resistance is set for the CGH40025F at 4.8 deg C/watt. The operating case
Cree
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transistor p98 P99 transistor 100 p38 transistor transistor nc p79 p88 transistor Gan hemt transistor

CGH40025P

Abstract: CGH40010P 65 % 440196 CGH40025F Up to 6.0 GHz 28 V 25 W 15 dB 65 % 440166 CGH40025P
Cree
Original
CGH40010P cgh60015 GaN ADS cgh40120F CGH60060D CGH60030D cgh60120D CGH40010F

ATC600L

Abstract: CGH55030F2 transistor. CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation
Cree
Original
CGH5503 CGH55 ATC600L ATC600S CGH55030 0914 transistor CGH55030P CGH55030F2/CGH55030P2 CGH55030F2/ 030F2

on 5295 transistor

Abstract: CGH27030 . CGH27030 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 Power
Cree
Original
CGH27030F on 5295 transistor CGH27030-TB CGH2703 27030F CGH27030F-TB

hemt .s2p

Abstract: . CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve
Cree
Original

CGH55030P2

Abstract: CGH5503 CGH55030P2 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 Power
Cree
Original
CGH55030-TB

CGH55030F2

Abstract: De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 25 Power Dissipation (W) 20
Cree
Original

CGH55030F2

Abstract: CGH55030P2 CGH55030P2 Power Dissipation De-rating Curve CGH40025F CW Power Dissipation De-rating Curve 30 Power
Cree
Original
CGH55030P2 APPLICATION NOTE