CEP9926/CEB9926 - Datasheet Archive

Oct. 2001 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 20V , 20A , RDS(ON)=30m @VGS=4.5V.

CEP9926/CEB9926 CEP9926/CEB9926 Oct. 2001 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 20V , 20A , RDS(ON)=30m @VGS=4.5V. RDS(ON)=40m @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S CEB SERIES TO-263(DD-PAK) G D S S CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current-Continuous @TJ=125 C -Pulsed ID 20 A IDM 70 A Drain-Source Diode Forward Current IS 20 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 50 0.4 W W/ C TJ, TSTG -65 to 150 C Thermal Resistance, Junction-to-Case R JC 2.5 C/W Thermal Resistance, Junction-to-Ambient R JA 62.5 C/W Operating and Storage Temperature Range THERMAL CHARACTERISTICS 4-137 4 CEP9926/CEB9926 CEP9926/CEB9926 ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted) 4 Parameter Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 Gate-Body Leakage IGSS VGS = 8V, VDS = 0V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS 20 V µA ON CHARACTERISTICS a ID(ON) gFS Forward Transconductance 0.73 1 V VGS = 4.5V, ID = 6.0A 23 30 m VGS = 2.5V, ID = 5.2A On-State Drain Current 28 40 m VDS = 5V, VGS = 4.5V 0.5 20 7 A 20 S 1660 PF 480 PF 119 VDS = 10V, ID = 6.0A PF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =8V, VGS = 0V f =1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =10V, ID = 6A, VGS =4.5V 29 60 ns 65 140 ns 60 140 ns 50 60 ns 23 VDD = 10V, ID = 1A, VGEN = 4.5V, RL = 10 RGEN = 6 30 nC nC 8 4-138 4.5 nC CEP9926/CEB9926 CEP9926/CEB9926 ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted) Parameter Min Typ Max Unit VGS = 0V, Is =1.7A 0.72 1.2 DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VSD Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 25 25 VGS=4.5,3.5,2.5V 20 ID, Drain Current (A) ID, Drain Current(A) 20 15 10 VGS=1.5V 5 15 10 Tj=125 C 25 C 5 -55 C 0 0.0 0 0 1 2 3 4 5 6 0.5 VDS, Drain-to-Source Voltage (V) 2500 2000 Ciss 1500 1000 Coss 500 Crss 0 0 2 4 6 8 10 1.5 2 2.5 3 Figure 2. Transfer Characteristics RDS(ON), On-Resistance(Ohms) 3000 1 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics C, Capacitance (pF) 5 C Condition Symbol 0.06 VGS=4.5V 0.04 0.03 25 C 0.02 -55 C 0.01 0.00 0 12 Tj=125 C 0.05 5 10 15 20 VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4-139 V 4 BVDSS, Normalized Drain-Source Breakdown Voltage 1.09 VDS=VGS ID=250 A 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.15 1.10 ID=250 A 1.05 1.00 0.95 0.90 0.85 -50 -25 25 50 75 100 125 150 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 20 30 10 Is, Source-drain current (A) 36 gFS, Transconductance (S) 0 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 24 18 12 VDS=10V 6 1 TJ=25 C 0 0 0 3 6 9 12 0.4 15 IDS, Drain-Source Current (A) ID, Drain Current (A) 3 2 1 0 3 6 1.0 1.2 1.4 300 200 100 VDS=10V ID=6A 0 0.8 Figure 8. Body Diode Forward Voltage Variation with Source Current 5 4 0.6 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current VGS, Gate to Source Voltage (V) 4 Vth, Normalized Gate-Source Threshold Voltage CEP9926/CEB9926 CEP9926/CEB9926 9 12 1m 10 1 0.5 0.1 15 18 21 24 Qg, Total Gate Charge (nC) RD S (O N) Lim it 10 10 0m s ms s DC VGS=4.5V Single Pulse Tc=25 C 1 10 30 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 4-140 60 CEP9926/CEB9926 CEP9926/CEB9926 4 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 PDM 0.05 t1 t2 0.02 0.01 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 0.01 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-141 10000