NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| CEP1710 | Chino-Excel Technology Corp. | N-Channel Enhancement Mode Field Effect Transistor |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CEP1710/CEB1710 CEF1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS(ON) ID @VGS CEP1710 Type 100V 85m 19A 10V CEB1710 CEB1710 100V 85m 19A , CEP1710/CEB1710 CEF1710 CEF1710 Tc = 25 C unless otherwise noted Symbol Test Condition Min , condition IS = 13A . 2 A 1.5 V CEP1710/CEB1710 CEF1710 CEF1710 50 25 C VGS=10,9,8V 10 , ) CEP1710/CEB1710 CEF1710 CEF1710 10 15 20 25 100ms 10 DC 10 10 30 1ms 10ms 1 ... | Original |
4 pages, |
CEP1710 CEB1710 CEF1710 CEP1710/CEB1710 CEP1710 abstract |
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| Abstract: CEP1710/CEB1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 19A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current , CEP1710/CEB1710 Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source , subject to production testing. 2 A 1.5 V 4 CEP1710/CEB1710 50 25 C VGS=10,9,8V , Voltage (V) CEP1710/CEB1710 10 15 20 25 100ms 10 DC 10 10 30 1ms 10ms ... | Original |
4 pages, |
CEP1710/CEB1710 CEP1710/CEB1710 abstract |
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| Abstract: CEP1710/CEB1710 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 19A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High , 1 2005.May http://www.cetsemi.com CEP1710/CEB1710 Electrical Characteristics Parameter , , not subject to production testing. 2 A 1.5 V 4 CEP1710/CEB1710 6 50 25 C 5 , 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP1710 ... | Original |
4 pages, |
702 P TRANSISTOR CEP1710/CEB1710 CEP1710/CEB1710 abstract |
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| Abstract: CEP540A CEP540A / CEB540A CEB540A 19 62.5 26 3.2 Single CEP1710 / CEB1710 CEB1710 12.8 65 12 , IRF540N IRF540N IRF540NS IRF540NS CEP80N75 CEP80N75 CEB80N75 CEB80N75 100 CEP60N10 CEP60N10 CEB60N10 CEB60N10 CEP540A CEP540A CEB540A CEB540A CEP1710 CEB1710 CEB1710 ... | Original |
35 pages, |
CEM2281 12p sot-23 AOD408 N-channel MOSFET AOD436 cef02n7 IRF630 complementary SI4430BDY CEP70N06 cep76139 CEF02N6 CEP20N06 CEM2163 CEP63A3 CEF04N6 equivalent 2928-8J 2928-8J abstract |
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