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| Part | Manufacturer | Description | Type | Ordering |
| CEM4946 | Chino-Excel Technology Corp. | Dual N-Channel Enhancement Mode Field Effect Transistor |
4 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CEM4946 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 60V, 4.5A, RDS(ON) = 55m @VGS = 10V. RDS(ON) = 75m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON , ://www.cetsemi.com 5 - 123 CEM4946 Electrical Characteristics Parameter TA = 25 C unless otherwise noted , V CEM4946 20 VGS=10,6,5,4.5V 16 ID, Drain Current (A) ID, Drain Current (A) 20 , Voltage (V) CEM4946 5 10 15 10 10 10 10 20 1 1ms 10ms 100ms 1s 10s ... | Original |
4 pages, |
CEM4946 CEM4946 abstract |
| Abstract: 19 1.9 Single CEM4426 CEM4426 55 75 4.5 2 19 1.7 Dual CEM4946 66 85 , AO4440 AO4440 CEM4946 CEM6601 CEM6601 AO4828 AO4828 IRF7341 IRF7341 IRF7341Q IRF7341Q FDFS2P106A FDFS2P106A Si4946EY Si4946EY AO4828 AO4828 AO4441 AO4441 ... | Original |
35 pages, |
CEM2281 12p sot-23 AOD408 N-channel MOSFET AOD436 cef02n7 IRF630 complementary SI4430BDY CEP70N06 cep76139 CEF02N6 CEP20N06 CEM2163 CEP63A3 CEF04N6 equivalent 2928-8J 2928-8J abstract |