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CEM4481 Datasheet

Part Manufacturer Description PDF Type Ordering
CEM4481 Chino-Excel Technology Corp. P-Channel Enhancement Mode Field Effect Transistor
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4 pages,
385.3 Kb

Original Buy
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CEM4481

Catalog Datasheet Results Type PDF Document Tags
Abstract: CEM4481 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.6A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). , 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CEM4481 , d.Guaranteed by design, not subject to production testing. 2 A -1.2 V 5 CEM4481 10 -VGS=10 , )Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM4481 -2 10ms 100ms 1s ... Original
datasheet

4 pages,
385.31 Kb

CEM4481 CEM4481 abstract
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Abstract: Single CEM4481 -60 74 100 -4.6 2.5 21 -2 76 105 -4.1 2 21 -2 , IRF7241 IRF7241 AO4443 AO4443 CEM4481 -60 Aos AO4443 AO4443 CEM6861 CEM6861 SI9407AEY SI9407AEY CEM6867 CEM6867 SI4948BEY SI4948BEY ... Original
datasheet

35 pages,
123.39 Kb

cef02n7 AOD436 AOD408 N-channel MOSFET CEB6355 SI4430BDY CEP70N06 IRF1010E CEF02N6 cep6060r CEM2163 cep76139 CEP63A3 CEP20N06 CEF04N6 equivalent 2928-8J 2928-8J abstract
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