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CEM4481 Datasheet

Part Manufacturer Description PDF Type Ordering
CEM4481 Chino-Excel Technology Corp. P-Channel Enhancement Mode Field Effect Transistor
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4 pages,
385.3 Kb

Original Buy
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CEM4481

Catalog Datasheet Results Type PDF Document Tags
Abstract: CEM4481 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.6A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). , 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CEM4481 , d.Guaranteed by design, not subject to production testing. 2 A -1.2 V 5 CEM4481 10 -VGS=10 , )Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM4481 -2 10ms 100ms 1s ... Original
datasheet

4 pages,
385.31 Kb

CEM4481 CEM4481 abstract
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Abstract: Single CEM4481 -60 74 100 -4.6 2.5 21 -2 76 105 -4.1 2 21 -2 , IRF7241 IRF7241 AO4443 AO4443 CEM4481 -60 Aos AO4443 AO4443 CEM6861 CEM6861 SI9407AEY SI9407AEY CEM6867 CEM6867 SI4948BEY SI4948BEY ... Original
datasheet

35 pages,
123.39 Kb

CEM3040 cef04n6 cef02n7 CEP70N06 IRF1010E CEB6355 SI4430BDY CEF02N6 cep6060r cep76139 CEM2163 CEP20N06 CEP63A3 CEF04N6 equivalent FQPF8N60C equivalent 2928-8J 2928-8J abstract
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