CEP740A/CEB740A CEI740A/CEF740A CEP740A CEB740A CEI740A CEF740A

CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP740A 400V 650m 10A 10V

CEP740A/CEB740A CEP740A/CEB740A CEI740A/CEF740A CEI740A/CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP740A CEP740A 400V 650m 10A 10V CEB740A CEB740A 400V 650m 10A 10V CEI740A CEI740A 400V 650m 10A 10V CEF740A CEF740A 400V 650m 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S G D S CEI SERIES TO-262(I2-PAK) G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 400 Gate-Source Voltage VGS TO-220F ±30 Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ID IDM PD V V 10 10 f Units e e A A 40 40 125 43 W 1 0.34 W/ C Single Pulsed Avalanche Energy d EAS 400 400 mJ Single Pulsed Avalanche Current d IAS 10 10 A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RJC 1.0 2.9 C/W Thermal Resistance, Junction-to-Ambient RJA 62.5 65 C/W 2003.October http://www.cetsemi.com 4 - 158 CEP740A/CEB740A CEP740A/CEB740A CEI740A/CEF740A CEI740A/CEF740A Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 400 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 400V, VGS = 0V 50 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 650 m Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) Forward Transconductance Dynamic Characteristics VGS = 10V, ID = 6A gFS On-Resistance VGS = VDS, ID = 250µA RDS(on) Static Drain-Source VDS = 50V, ID = 6A 2 3 5.4 S 835 pF 145 pF 85 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 16 VDD = 200V, ID = 10A, VGS = 10V, RGEN = 9.1 75 ns 25 125 ns 80 100 ns Turn-Off Fall Time tf 35 60 ns Total Gate Charge Qg 52 65 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 320V, ID = 10A, VGS = 10V 6.5 nC 27 nC Drain-Source Diode Characteristics and Maximun Ratings IS g Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD 10 VGS = 0V, IS = 10A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =9.16mH, IAS =10A, VDD = 50V, RG = 25, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 5A . 4 - 159 A 2 V 4 CEP740A/CEB740A CEP740A/CEB740A CEI740A/CEF740A CEI740A/CEF740A 20 6 5 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,7,6V 4 3 2 VGS=5V 25 C 15 10 5 -55 C 1 0 TJ=125 C 0 0 1 2 3 4 5 6 0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 1200 1000 Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=6A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 1.2 Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) 1.3 TJ, Junction Temperature( C) Figure 3. Capacitance VTH, Normalized Gate-Source Threshold Voltage VDS, Drain-to-Source Voltage (V) ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 160 15 10 VDS=320V ID=100A 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP740A/CEB740A CEP740A/CEB740A CEI740A/CEF740A CEI740A/CEF740A 9 6 3 0 12 24 36 48 4 RDS(ON)Limit 10µs 10 10 10 0 2 1 100µs 1ms 10ms DC 1 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 t1 t2 0.01 Single Pulse 10 1. RJC (t)=r (t) * RJC 2. RJC=See Datasheet 3. TJM-TC = P* RJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 161 10 3 10 4 3