NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
CEF10N6S - Datasheet Archive
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS(ON) ID @VGS 600V 0.75 10A d 10V
CEF10N6S CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S CEF10N6S VDSS RDS(ON) ID @VGS 600V 0.75 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D D G S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Tc = 25 C unless otherwise noted Symbol Limit Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V ID 10 A Drain Current-Continuous Drain Current-Pulsed IDM a Maximum Power Dissipation @ TC = 25 C e PD - Derate above 25 C d 40 d A 50 W 0.4 W/ C TJ,Tstg -55 to 150 C Symbol Operating and Store Temperature Range Thermal Characteristics Limit Units Thermal Resistance, Junction-to-Case Parameter RJC 2.5 C/W Thermal Resistance, Junction-to-Ambient RJA 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2008.Dec. http://www.cetsemi.com Electrical Characteristics Parameter CEF10N6S CEF10N6S Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 1 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 0.75 Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) On-Resistance VGS = VDS, ID = 250µA RDS(on) Static Drain-Source VGS = 10V, ID = 5A 2 0.65 Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 1760 pF 220 pF 20 pF 32.5 ns 61 ns 150 ns Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID =10A, VGS = 10V, RGEN = 25 Turn-Off Fall Time tf 60 ns Total Gate Charge Qg 44 nC Gate-Source Charge Qgs 7.7 nC Gate-Drain Charge Qgd 17 nC VDS = 480V, ID = 10A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD 10 VGS = 0V, IS = 10A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 6A . g.Full package VSD test condition IS = 6A . h.L = 15mH, IAS = 8.5A, VDD = 50V, RG = 25, Starting TJ = 25 C 2 A 1.4 V 4 CEF10N6S CEF10N6S 12 VGS=10,9,8,7,6,5V 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 6 4 VGS=4V 2 0 0 5 10 15 20 25 10 8 6 4 25 C 2 0 30 TJ=125C 0 -55 C 1.5 3.0 4.5 6.0 7.5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 2400 Ciss 2000 1600 1200 800 Coss 400 0 Crss 0 5 10 15 20 25 3.0 2.5 ID=10A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 1.2 Figure 4. On-Resistance Variation with Temperature VDS=VGS 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 10 1 10 VGS=0V 0 10 ID=250µA IS, Source-drain current (A) 1.3 TJ, Junction Temperature( C) Figure 3. Capacitance VTH, Normalized Gate-Source Threshold Voltage VDS, Drain-to-Source Voltage (V) -1 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=10A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEF10N6S CEF10N6S 6 4 2 0 0 15 30 45 4 RDS(ON)Limit 100ms 10 1 10 0 1ms 10ms DC 10 60 2 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 0.02 0.01 10 Single Pulse -2 10 -5 t2 1. RJC (t)=r (t) * RJC 2. RJC=See Datasheet 3. TJM-TC = P* RJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3