CED2838E - Datasheet Archive

 

CED2838E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT DUAL, COMMON CATHODE SILICON SWITCHING DIODES Top View TM

 

Central CED2838E CED2838E Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT DUAL, COMMON CATHODE SILICON SWITCHING DIODES Top View TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CED2838E CED2838E type are dual common cathode silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded TLPTM surface mount case. This device is ideal for high speed switching applications requiring extremely demanding size constraints. Bottom View FEATURES: · Power Dissipation 100mW · Low Package Profile, 0.5mm · Very low leakage current · Small, TLPTM 1x0.6mm, SOT-883 Leadless Surface Mount Package SOT-883 CASE MARKING CODES: K APPLICATIONS: · High speed switching MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM Average Forward Current 100 IO Peak Repetitive Reverse Voltage 200 Peak Forward Current IFM Power Dissipation PD Operating and Storage Junction Temperature UNITS V mA 300 mA Y R A TJ, Tstg IN M 100 mW (Note 1) -65 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL IR BVR VF VF VF CT trr I L TEST CONDITIONS VR=70V IR=100µA E R IF=10mA IF=50mA P MIN TYP MAX UNITS 20 100 nA 0.7 0.9 100 V V 0.8 1.0 V IF=100mA VR=0, f=1 MHz 0.9 1.1 V 0.6 2.0 pF IR=IF=10mA, RL=100, Rec. to 1.0mA 3.0 4.0 ns Enhanced specification Notes: (1) FR-4 epoxy PC board with a mounting pad area of 10mm x 10mm R0 (13-December 2006) Central RY CED2838E CED2838E INA TM Semiconductor Corp. P IM ELENHANCED SPECIFICATION R SURFACE MOUNT DUAL, COMMON CATHODE SILICON SWITCHING DIODES SOT-883 - MECHANICAL OUTLINE LEAD CODE: 1) ANODE D1 2) ANODE D2 3) CATHODE D1, D2 R0 (13-December 2006)