NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
CEP72A3/CEB72A3 - Datasheet Archive
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super
CEP72A3/CEB72A3 CEP72A3/CEB72A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G G S CEB SERIES TO-263(DD-PAK) G D S ABSOLUTE MAXIMUM RATINGS Parameter CEP SERIES TO-220 Tc = 25 C unless otherwise noted Symbol Limit 30 Units V VGS ±20 V ID 75 A IDM 225 A 75 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range PD 0.5 W/ C TJ,Tstg -55 to 175 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RJC 2.0 C/W Thermal Resistance, Junction-to-Ambient RJA 62.5 C/W 2002.September http://www.cetsemi.com 4 - 150 CEP72A3/CEB72A3 CEP72A3/CEB72A3 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forwand Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 3 V 5 6 m VGS = 4.5V, ID = 37A 7 9 m VDS = 10V, ID = 40A 50 S 2447 pF 983 pF 187 pF VGS = 10V, ID = 40A 1 c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 25 VDD = 15V, ID = 60A, VGS = 10V, RGEN = 6 50 ns 21 45 ns 58 100 ns Turn-On Fall Time tf 13 33 ns Total Gate Charge Qg 35 45 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 40A, VGS = 5V 11 nC 16 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD 75 VGS = 0V, IS = 40A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 4 - 151 1 A 1.3 V 4 CEP72A3/CEB72A3 CEP72A3/CEB72A3 60 120 100 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7,6,5,4V 80 60 VGS=3V 40 50 40 30 20 25 C 10 20 TJ=125 C VGS=2V -55 C 0 0 0 1 2 1 3 2 3 4 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 3600 3000 Ciss 2400 1800 Coss 1200 600 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=40A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 1.2 Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) 1.3 TJ, Junction Temperature( C) Figure 3. Capacitance VTH, Normalized Gate-Source Threshold Voltage VDS, Drain-to-Source Voltage (V) ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 VGS=0V 10 10 10 -25 0 25 50 75 100 125 2 1 0 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 152 10 10 VDS=15V ID=40A 8 6 4 2 0 10 4 20 40 60 80 2 100µs 10 10 10 0 3 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP72A3/CEB72A3 CEP72A3/CEB72A3 1ms 1 10ms 100ms DC 0 TC=25 C TJ=175 C Single Pulse -1 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 10 0 PDM -1 t1 t2 10 1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = P* RJA (t) 4. Duty Cycle, D=t1/t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 153 10 0 10 1 2