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Part : CA3127MZ Supplier : Renesas Electronics Manufacturer : Future Electronics Stock : - Best Price : $2.60 Price Each : $2.60
Part : CA3127E Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : CA3127ER2323 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 10,126 Best Price : $2.52 Price Each : $2.52
Part : CA3127ER2323 Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : CA3127ER2489 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 500 Best Price : $1.27 Price Each : $1.27
Part : CA3127ER4102 Supplier : Intersil Manufacturer : Rochester Electronics Stock : 1,809 Best Price : $1.27 Price Each : $1.27
Part : CA3127ER4102 Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : CA3127EX Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 836 Best Price : $2.10 Price Each : $2.10
Part : CA3127F Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : CA3127M Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : CA3127M96 Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : - Best Price : - Price Each : -
Part : CA3127MZ Supplier : Rochester Electronics LLC Manufacturer : Rochester Electronics Stock : 4,687 Best Price : $26.48 Price Each : $26.48
Part : CA3127E Supplier : RCA Manufacturer : Bristol Electronics Stock : 168 Best Price : $1.5529 Price Each : $3.5840
Part : CA3127E Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 25 Best Price : $1.7920 Price Each : $3.5840
Part : CA3127EX Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 144 Best Price : $1.6727 Price Each : $3.5840
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CA3127 Datasheet

Part Manufacturer Description PDF Type
CA3127 Harris Semiconductor Original
CA3127 Harris Semiconductor Original
CA3127 Intersil High Frequency NPN Transistor Array Original
CA3127 RCA Solid State Linear Integrated Circuits 1970s Scan
CA3127E Harris Semiconductor High Frequency NPN Transistor Array Original
CA3127E Intersil High Frequency NPN Transistor Array Original
CA3127E Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-PDIP Original
CA3127E General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan
CA3127E N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
CA3127E N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
CA3127E RCA Solid State Linear Integrated Circuits 1970s Scan
CA3127EX N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
CA3127F General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan
CA3127H General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan
CA3127M Intersil High Frequency NPN Transistor Array Original
CA3127M Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC Original
CA3127M N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
CA3127M96 Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC Original
CA3127M96 Intersil High Frequency NPN Transistor Array Original
CA3127M96 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

CA3127

Catalog Datasheet MFG & Type PDF Document Tags

ccb transistor

Abstract: TRANSISTOR 100MHz ® CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array The CA3127 , completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 , monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors , Ordering Information PART NUMBER (BRAND) CA3127M (3127) TEMP. RANGE (oC) -55 to 125 PKG. DWG. # M16 , SOIC Pinout CA3127 (SOIC) TOP VIEW 1 2 Q2 3 4 Q1 16 15 14 13 Q5 12 11 SUBSTRATE 5 6
Intersil
Original
ccb transistor TRANSISTOR 100MHz 500MH 100MH 1-888-INTERSIL ISO9000

CA3046 bjt

Abstract: CA3086 CA3046, CA3086, CA3127 Transistor Array SPICE Models TM Application Note June 1997 , CA3127 High Frequency NPN Transistor Arrays. Several model performance curves have been included to , * *CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + (IS = 3.20E - 12 , 30 100 Application Note MM9701 CA3127 Model Performance 100 1.20 1.16 80 (GHz , (mA) FIGURE 6. CA3127 f T vs IC FIGURE 7. CA3127 hFE vs IC 700 280 600 240 (F
Intersil
Original
CA3046 bjt CA3046 spice CA3086 spice CA3046 NPN Pspice ca3086 333E CH-1009

Harris CA3046

Abstract: CA3046 bjt Harris Semiconductor No. MM9701 Harris Linear June 1997 CA3046, CA3086, CA3127 , , and the CA3127 High Frequency NPN Transistor Arrays. Several model performance curves have been , CORPORATION *ALL RIGHTS RESERVED * *CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + (IS = 3.20E - 12 XTI= 3.000E + 00 + VAR = 1.000E + 02 BF = 95.2E + 00 + IKF = , . CA3046 VCE(SAT) vs IC 3 30m 100m 30 100 Application Note MM9701 CA3127 Model
Harris Semiconductor
Original
Harris CA3046 Harris CA3086 Application of the CA3086 CA3086 APPLICATION NOTE pspice high frequency transistor pspice model

HP-343A

Abstract: HP342A Synthesizers CA3127M -55oC to +125oC 16 Lead Narrow Body SOIC · Cascade Amplifiers CA3127M96 , CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description · Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 , CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual , monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors
Harris Semiconductor
Original
1021-P1 HP343A HP342A HP-343A y12 t 646 dc voltmeter circuit diagrams TA6206

CA3046 bjt

Abstract: CA3086 CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 , bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays , RIGHTS RESERVED * *CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + , 30m 100m 30 100 Application Note MM9701 CA3127 Model Performance 100 1.20 1.16 , ) COLLECTOR CURRENT (mA) FIGURE 6. CA3127 fT vs IC FIGURE 7. CA3127 hFE vs IC 700 280 600 240
Intersil
Original
npn tr array

z144

Abstract: 1021-P1 CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to 125 16 Ld SOIC M16 , CA3127 High Frequency NPN Transistor Array August 1996 Features Description · Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose , exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz , connection has been provided for maximum application flexibility. The monolithic construction of the CA3127
Intersil
Original
z144 zener Diode B22 cascode transistor array 200MH
Abstract: SOLID STATE 01 D E l 3675081 0014b43 T r r - S 3 " 2 5 Arrays CA3127 , GHz, making the CA3127 useful from dc to 500 MHz. Access is provided to each of the ter m inals fo r , applica tio n flexibility. The m o n o lith ic con struction of the CA3127 provides close electrical and therm al m atching o f the five transistors. The CA3127 is supplied in the 16-lead d u al-in-lin e , . 20 mA *The collector of each transistor of the CA3127 is isolated from the substrate by an -
OCR Scan
CA-CA3127 ZCS-22Z22 100-MH

z144

Abstract: 1021-P1 PKG. NO. · VHF Mixers CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to , CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description · Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 , CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual , monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors
Harris Semiconductor
Original

647 transistor

Abstract: TA6206 Synthesizers · Cascade Amplifiers Ordering Information PART NUMBER CA3127E CA3127F CA3127M CA3127M96 , Transistor Array Description .>1GHz The CA3127* consists of five general purpose silicon , low 1/f noise and a value of f j in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access , connection has been provided for maximum application flexi bility. The monolithic construction of the CA3127 , . Pinout CA3127 (PDIP, CDIP, 150MIL SOIC) TOP VIEW CAUTION: These devices are sensitive to
-
OCR Scan
647 transistor 1A1197

RCA-CA3127

Abstract: rca 0190 transistor of CA3127. MAXIMUM RATINGS, Absolute-Maximum Values: POWER DISSIPATION, PD: Any one transistor , G E SOLID STATE â¡! DEl 3fl7SDfll DQ14t43 =1 _B_â"¢ Arrays CA3127 High-Frequency N-P-N , low 1/f noise and a value of fT in excess of 1 GHz, making the CA3127 useful from dc to 500 MHz , connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. The CA3127 is supplied in the 16
-
OCR Scan
RCA-CA3127 rca 0190 transistor iY22 rca 0190 currentmirror 6 "transistor arrays" ic 92CS-222I4 2C5-Z2229

CA3046 bjt

Abstract: CA3046 spice CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June , transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency , + 00 RB = 0.00E + 00 * *COPYRIGHT © 1997 HARRIS CORPORATION *ALL RIGHTS RESERVED * *CA3127 PSpice MODEL *REV: 2-13-97 * - BJT MODEL -* .model CA3127 NPN + (IS = 3.20E - 12 XTI , 30 100 Application Note MM9701 CA3127 Model Performance 100 1.20 1.16 80 (GHz
-
Original
0138E Pspice CA3086 pspice CA3046 pspice CA3046 equivalent CA3046 Harris

CA3127E

Abstract: Mixers CA3127E -55 to 125 16 Ld PDIP E16.3 CA3127M (3127) -55 to 125 16 Ld SOIC , CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description â'¢ Gain Bandwidth Product (fT) . >1GHz The CA3127 consists , CA3127 useful from DC to 500MHz. Access is provided to each of the term i­ nals for the individual , . The monolithic construction of the CA3127 provides close electrical and thermal matching of the five
-
OCR Scan

CA3127

Abstract: TRANSISTOR 100MHz ) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tapa and Reel M16.15 CA3127 (PDIP, SOIC) TOP VIEW C A U T , CÌLJ d ì h -L A J R F R IS S E M I C O N D U C T O R CA3127 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a com m , value of fy in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of , for maximum application flexi bility. The m onolithic construction of the CA3127 provides close
-
OCR Scan
zener y21 200MHZ
Abstract: Amplifiers · Synthesizers · Cascade Amplifiers Ordering Information PART NUMBER CA3127E CA3127F CA3127M , ® HARRIS S E M I C O N D U C T O R CA3127 High Frequency N-P-N Transistor Array Description The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic , 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the termi nals for the , bility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the -
OCR Scan
Abstract: High-Frequency N -P-N Transistor Array Description The CA3127* consists of five general-purpose silicon n-p-n , noise and a value of f t In excess of 1GHz, making thè CA3127 . useful from DC to 500MHz. AcGess Is , been provided for maximum application flexibility. Thè monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. The CA3127 Is supplied in tho 16 , . t The collector of each transistor of the CA3127 la Isolated from thé substrate by an Integral diode -
OCR Scan
1250C

z144

Abstract: CA3127 TEMP. RANGE (°C) PACKAGE PKG. DWG. # CA3127M CA3127 -55 to 125 16 Ld SOIC M16 , CA3127 ® Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic , of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals , application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal
Intersil
Original

100MHZ NPN TRANSISTORS

Abstract: transistor 6623 Synthesizers · Cascade Amplifiers CA3127M (3127) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel , F HH A R R IS August 1996 SEMICONDUCTOR 4 ', l i \ A tV. \CA3127 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a , value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access Is provided to each of , for maximum application flexi bility. The monolithic construction of the CA3127 provides close
-
OCR Scan
100MHZ NPN TRANSISTORS transistor 6623 M16.15 Package low noise transistors rf 3127
Abstract: N-P-N Transistor Array D e s c rip tio n The CA3127* consists of five general-purpose silicon n -p -n , noise and a value of f j in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is , been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. The CA3127 is supplied in the 16 , m k g r 662 1 7 -4 3 CA3127 STATIC ELECTRICAL CHARACTERISTICS at T A = 25 -
OCR Scan
31T03 3MVI03 100-M

differential pair cascode

Abstract: piezoelectric transducer amplifier Transistor Array CA3127 ©©©©©©©© 05 V / Q4 TOP VIEW 7X02 SUBSTRATE 7\03 Ã'©©©©©© , Collector Current, Iq .20 mA *The collector of each transistor of the CA3127
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OCR Scan
CA3095 differential pair cascode piezoelectric transducer amplifier Super matched pair super beta transistor transistor Common Base amplifier 92CS-20350 100/XA
Abstract: ffl H A R R IS S E M I C O N D U C T O R RCA GE INTERSIL Arrays CA3127 May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s , .6 3.7 2 24 dB dB n kn pF pF m m ho 7 -5 5 CA3127 Fig. 2 - 1/ f noise figure a s a , gain as a function o f frequency at R^ m 7 k 11. 7 -5 6 CA3127 Fig. 9 - DC forw ard-current , collector current. 7 -5 7 ARRAYS CA3127 Fig. 17 - Reverse transadmittance (Y j2 ) as a function -
OCR Scan
Showing first 20 results.