NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| C7M | Switchcraft | Connector: Circular Connector: F: 7 |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: -fatta, / VIA The VIA C7-M processor is designed to inspire a new breed of mobile devices , the smallest x86 mobile PC processor, the VIA C7-M processor is targeted specifically at the mainstream, thin and light, and ultra portable notebook segments. The VIA C7-M processor integrates the , Design m Developed from the ground up for low power operation, the VIA C7-M processor is based on the , PowerSaver™ technology, which dynamically adjusts the frequency and voltage of the VIA C7-M processor ... | OCR Scan |
2 pages, |
via c7-m SHA-256 SHA-256 abstract |
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| Abstract: Tag Configuration L7M C7M VDD EEPROT M C1 L125 EM4522 EM4522 CSX C125 XCLK C2 VSS Typical components C7M L7M C125 L125 CSX Value 180 pF - 1 nF 3.04 uH - 0.548 uH 300 pF - 1 nF ... | Original |
1 pages, |
passive rfid tags memory L125 C125 EM Microelectronic RFID c125 diode rfid tag EM 125 kHz RFID write tag 128 bit 125 kHz RFID tag EM4522 em43 EM4322 EM4522 abstract |
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| Abstract: Part No. 1 Part No.5 C3M QGP327 QGP327 C4M - C5M - C6M - C7M - Insert Contacts 3 4 5 6 7 ... | Original |
1 pages, |
QGP327 QGP326 C6F switchcraft datasheet abstract |
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| Abstract: Animal tagging Sports event timing L7M C7M VDD M C1 L125 CSX C125 C2 Features ... | Original |
1 pages, |
L125 C125 125 kHz coil em43 EM4322 EM4322 abstract |
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| Abstract: ~Ta4 co^^-7'ju ENTB- I'^^/\-Tbi~TB4 tD^^-7'J I ENRA- U->-/\*Rai~Ra4 ENRB-^->-/\'Rbi~Rb4 C7M * - 7'JU ... | OCR Scan |
2 pages, |
MAX249 MAX248 MAX244 EIA/RS-232 MAX244/245/246/247/248/249 EIA/RS-232 abstract |
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| Abstract: ¤QGP327 QGP327 3 C4M - 4 C5M - 5 ¤C6M - 6 ¤C7M - 7 1 Satin nickel ... | Original |
4 pages, |
QGP327 QGP326 connectors datasheet abstract |
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| Abstract: The 716 is available with a sensitivity of 60 C7M/MR/hr as the 71630 .28 7.1 .97 24.5 ti/" SOLDER ... | OCR Scan |
2 pages, |
ZP1300 gamma detector ZP1310 716/ZP1300 716/ZP1300 abstract |
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| Abstract: ttlitii+j < USD i»imn&iaii 24DPLC 24DPLC Id MILT £C7M B Ktt-E fc-J RECOMMENDED PCB LAYOUT Peg TCLHWttt ; ¿¿.¿5 ... | OCR Scan |
3 pages, |
cf775 H365 datasheet abstract |
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| Abstract: embedded in your success C7-M VIA Padlock Security Engine: The World's Fastest x86 Security Features The , Form Factor (170mm X 170mm) ♦ Always-on Point of Sales (POS) Applications ♦ VIA C7™-M uFCPGA Processor , C7™-M NanoBGA2 C7™/Eden™ NanoBGA2 C7™ VN800 VN800 CN700 CN700 CN700 CN700 Integrated VIA UniChrome™ Pro AGP Graphics ... | OCR Scan |
8 pages, |
VN800 via vn800 RGB03 ML8000 COREFUSION 800 via c7-m epia m10000 EK8000E datasheet abstract |
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| Abstract: )g´F-â^ k u D@5%uI)g9m»¼mh5åæâ^ åæí G Ðjí £ C7M M } } ¡} E ~~ ~~ { ¥ }T , (ñû *( !f´%ügåæí´f-åæí%ïEð)g´F-â^ k u ¹º%uI)gm»¼mh5åæâ^ åæí G Ðjí C7M M £ ~ ¢ ... | Original |
24 pages, |
AAACE aaei aace datasheet abstract |
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| Abstract: !" WIN SUN TECHNOLOGY COMPANY PROFILE Philosophy & !" TVS (SMD Transient Voltage Suppresors) Part number Series !"PTC(Positive Temperature Coefficient) Applica ... | Original |
42 pages, |
SP005-76 SA965 d419 ygac 63Sn37Pb 63Sn37Pb 63Sn37Pb 116E 10Sn90Pb SP005 gas discharge tube application datasheet abstract |
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| Abstract: SEMICONDUCTORS V - h 7 > i? X 9 2 SC 756 i±, |jf b L < Hfg § tl tz, APMM x 'J 3 > h 7 > i? X 7 (Advanced Passivated Mesa Transistor) T% £^TSttibL, ¿»o, MLM^TEibM^T^o fciSffllg, ^ffl'ltiO b 7 2 SC 756 ii , ^itipi, i&jgiWjitiis, atiSJtx^ -y m ft ft * 3£ C 756-2 C 756-3 C 756-4 Ta=25°C 3 V ? ? • - X RB « J± VCBO 100 1 30 150 V 3 v 7 9 - x i -y i' w m E vceo 60 80 100 V X. /// - X w s EE Vebo 6 V 3 « Ic 4 A ^ - X 1 i »R Ib 0.8 A 3 tit Pc 10 (Tc=25°C) W Vs ^ > ? 3 ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: JGD c:> KBP200G KBP200G THRU KBP210G KBP210G SINGLE PHASE 2.0 MUPS. GLASS PASSILATED BRIDGE RECTIFIERS FEATURES * Idéal for printed circuit board * Reliable low cost construction ^High Surge Current Capability * Small size,simple installation VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes KBP 'T .032(0.0) 02Ä(C7) m .591(15) .512(13) -O o () c> '>SPACING Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICA!. CHARACTERISTICS Rating , at 25°C ambient temperature unless otherwise specified. Sing ... | OCR Scan |
2 pages, |
KBP200G KBP210G KBP200G abstract |
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| Abstract: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit A Rect. Diode Tc = 85 °C 250 Tc = 100 °C 215 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A2s Tj = 150 °C 8800 A2s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000 V 1s 4800 V IF IFSM Tj = 150 °C 10 ms i2t ® SEMiX 13 Tj Module Bridge Rectifier Module (uncontrolled) ... | Original |
3 pages, |
bridge rectifier module datasheet abstract |
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| Abstract: JGD c:> KBP200G KBP200G thru KBP210G KBP210G SINGLE PHASE 2.0 AMPS. GLASS PASSILATED BRIDGE RECTIFIERS FEATURES * Ideal for printed circuit board * Reliable low cost construction ^High Surge Current Capability * Small size,simple installation VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes kbp 'T .032(0.0) 02Ä(C7) m .591(15) .512(13) -O o () c> l6°t* ') SPACING Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating.at 25°C ambient temperature unless o ... | OCR Scan |
2 pages, |
KBP210G KBP200G 206G 200G KBP200G abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Collector Emitter Saturation Voltage (I B =0.5 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23619-v1.htm |
Microsemi | 08/12/1999 | 8.35 Kb | HTM | 23619-v1.htm |
| Collector Emitter Saturation Voltage (I B =0.5 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23618-v1.htm |
Microsemi | 08/12/1999 | 8.35 Kb | HTM | 23618-v1.htm |
| Collector Emitter Saturation Voltage (I B =1.4 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23614-v1.htm |
Microsemi | 08/12/1999 | 8.46 Kb | HTM | 23614-v1.htm |
| Collector Emitter Saturation Voltage (I B =0.5 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23620-v1.htm |
Microsemi | 08/12/1999 | 8.35 Kb | HTM | 23620-v1.htm |
| Collector Emitter Saturation Voltage (I B =0.7 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23923-v1.htm |
Microsemi | 08/12/1999 | 8.46 Kb | HTM | 23923-v1.htm |
| Collector Emitter Saturation Voltage (I B =1.4 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23612-v1.htm |
Microsemi | 08/12/1999 | 8.46 Kb | HTM | 23612-v1.htm |
| Collector Emitter Saturation Voltage (I B =1.4 mA, I C =7 mA, T A =25 ºC,300us Current Gain (I C =7 mA, T A =25 ºC,300us pulse) HFE www.datasheetarchive.com/files/microsemi/products/23613-v1.htm |
Microsemi | 08/12/1999 | 8.46 Kb | HTM | 23613-v1.htm |
| ; [ ] [ ] [ ] \f # dummy topic profile (fta) t 42 N; ; \C7m Collection Administration ; [ ][] [ ] [ ] [ ] [ ] [ ] \f t 74 N;collection select template (9) UsS; (9) UsS; (9) UsS; (14) UnS; (16) UsS; ; \C7m [ ] \C7m Search Options \C27m S; (32)|UsS; (32)^UsS; (110)|UsS; (97)|UsS; (4)|UsS; (4)^UsS; (107)|UsS; (31)>UsS; (31) ############################################################################## t 70 N;collection create template (9) MsS; (28) MsS; (24) UsS; (23) UsS; ; \C7m www.datasheetarchive.com/files/sgs-thomson/fultext.msg |
SGS-Thomson | 12/05/1995 | 51.35 Kb | MSG | fultext.msg |
| Collector Emitter Saturation Voltage (I B =3 mA, I C =7 mA, T A =25 ºC,300us www.datasheetarchive.com/files/microsemi/products/24409-v1.htm |
Microsemi | 08/12/1999 | 8.35 Kb | HTM | 24409-v1.htm |
| Collector Emitter Saturation Voltage (I B =3 mA, I C =7 mA, T A =25 ºC,300us www.datasheetarchive.com/files/microsemi/products/24416-v1.htm |
Microsemi | 08/12/1999 | 8.35 Kb | HTM | 24416-v1.htm |