NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| C4159 | Hamamatsu Corporation | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector |
2 pages, |
Original |  |
|
|||||
| C4159-01 | Hamamatsu Corporation | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector |
2 pages, |
Original | |
|
|||||
| C4159-02 | Hamamatsu Corporation | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector |
2 pages, |
Original | |
|
|||||
| C4159-03 | Hamamatsu Corporation | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector |
2 pages, |
Original | |
|
|||||
| C4159-04 | Hamamatsu Corporation | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector |
2 pages, |
Original | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , etc. ©C4159, -01,-03 I C4159-02 4-PIN CONNECTOR WINDOW ¿10±0.2 i S I WINDOW SIZE rt i DEPENDS ... | OCR Scan |
6 pages, |
P2613-01 G5832-05 G5832 G3476-01 P4736 P4736-01 P4736-05 B1720-02 P2750 TSFL Pyroelectric detector human body a7050 P394 series P3782-12 G3476 P4488 P3514 P4488 abstract |
|
|||
| Abstract: INFRARED DETECTOR InSb P5968/P4247 P5968/P4247 35 um l : 8 l l l l l FTIR l () 8 l P7751-01 P7751-01 (P5968-060 P5968-060) P7751-02 P7751-02 (P5968-200 P5968-200) () l InSb s / *1 C4159-01 (1 mm) C4159-04 (2 mm) (3 mm ) (mm) P5968-060 P5968-060 0.6 P5968-100 P5968-100 1 /Si P5968-200 P5968-200 2 P5968-300 P5968-300 3 /Si P5968-105 P5968-105 1 2 P4247-16 P4247-16 0.25 Ã- 1.4 * 3 /Si 0.45 Ã- 0.45 * P4247-44 P4247-44 *1: Si: (AR ) *2: 1 (16 ) *3: 1 (4 Ã- 4 ) 1 1 1 ... | Original |
4 pages, |
P7751-02 C4159-04 InSb P4247-16 P5968-060 P5968-100 P5968-105 P5968-200 P5968-300 P7751-01 C4159-01 P5968/P4247 P5968/P4247 abstract |
|
|||
| Abstract: ) l Amplifiers for InAs photovoltaic detector C4159-05 (only for P7163 P7163) s Specifications ... | Original |
4 pages, |
P8079-21 A3179-01 C1103-04 c4159 e P4631-01 P7163 P8079 P8079-01 P8079-11 A3179 P8079 abstract |
|
|||
| Abstract: ) ¡SPECIFICATIONS (Common) Preamplifier for Ge photodiodes C4159 Peak Wavelength 1.55 um Window Material , TE-cooled types C1103-04 C1103-04 Proamplifier for Ge photodiodes C4159 â- SPECIFICATIONS (Common) Package TO-8 (one ... | OCR Scan |
4 pages, |
res 3010 A3179-01 B1720-02 B1720-05 B1918-01 B1919-01 B1920-01 A3179 B2614-05 B6175-05 C1103-04 C4159 B2538-05 peltier effect element C4159 abstract |
|
|||
| Abstract: for InSb photovoltaic detector C4159-01 (active aera: smaller than 1 mm) C4159-04 (active area: 2 ... | Original |
4 pages, |
United Detector silicon C4159-04 P5968-060 P5968-100 P5968-105 P5968-200 P5968-300 1BW 58 transistor 1BW P7751-02 P7751-01 C4159-01 C4159 Metal Detector P5968/P4247 P5968/P4247 abstract |
|
|||
| Abstract: sahyo Unmarte d:TO-220l C. •:T0220MF T0220MF T0-220MI T0-220MI - . MF" Typo Transistors \ V \ CED (A)\ 30 50 60 80 85 100 120 160 200 250 300 400 500 600 800 900 0.02 1 C4031 C4031# 0.2 A1697 A1697 C4474 C4474 C4075 C4075 0.4 A1696 A1696 C4473 C4473 â- - 1.5 A1606 A1606 C4159 C3751 C3751 C4223 C4223# 3 B1133 B1133 B1Z74 B1Z74 D1666 D1666 D1913 D1913 C5476 C5476* B1226 B1226* D1828 D1828* D2048 D2048® J306 C3749 C3749 C4171 C4171® C4221 C4221# C3752 C3752 01224« 4 B1223 B1223* B1471 B1471*# D1825 D1825* D2223 D2223*# J272 J320 K2010 K2010 C4160 C4160 C4219 C4219# 4.5 D1958 D1958 ... | OCR Scan |
1 pages, |
b1225 c3751 d1827 k1904 J306 B1135 c3747 c3748 D1825 d1667 D1666 B1133 k1419 J307 B1136 T0220MF T0-220MI T0220MF abstract |
|
|||
| Abstract: InAs P10090 P10090 P7163 P7163 3 m InAsPbS3 m P10090 P10090 (P8079 P8079)InAs (P10090 P10090) (P7163 P7163) () (D*) () 1 A3179 A3179 2 A3179-01 A3179-01 P4631-02 P4631-02 C1103-04 C1103-04 InAs (P10090 P10090: C4159-06P7163: C4159-05) / *1 P10090-01 P10090-01 /S P10090-11 P10090-11 /S P10090-21 P10090-21 P7163 P7163 /S *1: S= (mm) TO-5 1 TO-8 2 1 (mW) 0.2 VR Topr (°C) (V) 0.5 -40 +60 Tstg (°C) -40 +80 - -55 +60 Rsh NEP =p tr VR=0 V RL=50 063 % (W/Hz1/2 ... | Original |
5 pages, |
P8079 P10090-01 P10090 C1103-04 A3179-01 A3179 P7163 C4159 P10090 abstract |
|
|||
| Abstract: InGaAs PIN G8605 G8605 NIR () InGaAs PIN D* G8605 G8605 1 (-10 °C)2 (-20 °C) 1 mm5 mm () InGaAs PIN () C4159-03 1 2 A3179 A3179 C1103-04 C1103-04 A3179-01 A3179-01 G8605-11 G8605-11 G8605-12 G8605-12 G8605-13 G8605-13 G8605-15 G8605-15 G8605-21 G8605-21 G8605-22 G8605-22 G8605-23 G8605-23 G8605-25 G8605-25 / * 1 /K TO-8 /K 2 (mm) 1 2 3 5 1 2 3 5 VR Max. Topr (mW) (A) (V) (°C) 5 5 1.5 5 2 0.2 -40 +70 5 5 1.0 5 2 Tstg (°C) -55 +85 * K: AR (1.55 um ... | Original |
4 pages, |
G8605-21 A3179-01 C1103-04 C4159-03 G8605 G8605-11 G8605-12 G8605-13 G8605-15 A3179 G8605 abstract |
|
|||
| Abstract: (Optional) Preamp for InGaAs PIN photodiode (High sensitivity type) C4159-03 Heatsink for one-stage ... | Original |
4 pages, |
A3179 C4159 C4159-03 G8605 A3179-01 G8605-12 G8605-13 G8605-15 G8605-21 C1103-04 G8605-11 transistor C4159 G8605 abstract |
|
|||
| Abstract: P4631-02 P4631-02 Amplifiers for InAs photovoltaic detector (P10090 P10090 series: C4159-06, P7163 P7163: C4159-05 ... | Original |
6 pages, |
A3179 A3179-01 C1103-04 c4159 e P10090-21 P7163 P8079 photovoltaic P10090 pbs photoconductive photovoltaic module c4159 transistor C4159 P10090 abstract |
|
|||
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |