NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| C30950E | PerkinElmer Optoelectronics | si Pin Modules High Bandwidth 40 MHZ to 100 MHZ |
50 pages, |
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| C30950E | RCA Solid State | Solid State Detectors |
2 pages, |
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| C30950E | RCA Solid State | Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules |
2 pages, |
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| C30950EL | RCA Solid State | Solid State Detectors |
2 pages, |
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| C30950EL | RCA Solid State | Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules |
2 pages, |
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| C30950F | RCA Solid State | Solid State Detectors |
2 pages, |
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| C30950F | RCA Solid State | Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules |
2 pages, |
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| C30950FL | RCA Solid State | Solid State Detectors |
2 pages, |
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| C30950FL | RCA Solid State | Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules |
2 pages, |
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| C30950G | RCA Solid State | Solid State Detectors |
2 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Hermetically-Sealed Modified TO-8 Packages RCA Developmental Types C30950E, C30950F, and C30950G are Silicon , Developmental Types C30950EL, C30950FL, C30950GL are Silicon Avalanche Photodiode- Preamplifier Modules with , Chip (Dia.) C3Q950E C3Q950E, EL C30817 C30817 (0.8 mm) C30950F, FL C30902E C30902E (0.5 mm) C30950G, GL C30902E C30902E (0.5 mm) Type Light Pipe Core Dia. C30950EL 0.50 mm C30950FL 0.25 mm C30950GL 0.25 mm Optical (C30950EL, FL , ranges specified below: C30950F, FL, Ç30950G, GL: 180 - 250 V. C30950EL, FL, GL 11.05 (0.435) WINDOW ... | OCR Scan |
2 pages, |
RCA Solid State amplifier C30902E C30950 C30950EL C30950F C30950FL C30950G C30950GL fast photodiode amplifier RCA Solid State avalanche photodiodes preamplifier voltage photodiode preamplifier C30950E 000D044 C30950 000D044 abstract |
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| Abstract: , C30902S-TC C30902S-TC or DTC) ultra low-noise APDs and modules Preamplifiers C30950 and C30659 C30659 devices use some of , a Si APD or InGaAs hermetic TO packages. The C30608E C30608E uses a transimpedance FET amp. The C30950E and , ] 0.7 60 C30950E C30817 C30817[Si APD] L 0.8 560 0.7 20 0.036 50 275 - 425 ... | Original |
35 pages, |
APD InGaAs array nir emitter leds with 700 to 900 nm C30817 C30808E C30724 C30954 C30659-1060-3A FFD-100 C30845E C30927E-01 InGaAs APD quadrant PGEW2S09 C30659-1550-R2A datasheet abstract |
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| Abstract: xq1560 A906013 A906012 lhi878 LHI968 .036 50 275-425 0.8 1000 0.7 25 .025 40 275-425 C30950E C30817 C30817 ... | Original |
50 pages, |
TPS534 PGEW3S09 C1983 A106013 C30927E-01 C1952 C1973 transistor c1383 pin configuration of C1383 transistor Light-Dependent Resistor specification c1983 transistor C1383 NPN transistor C1383 transistor NPN transistor c1383 datasheet abstract |
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| Abstract: transimpedance than the regular C30950 series. The C30659 C30659 is pin to pin compatible with the C30950 series. , High reliability Fast overload recovery Pin compatible with the C30950 series Light entry angle ... | Original |
9 pages, |
PerkinElmer Avalanche Photodiode InGaAs APD Pre-Amplifier 14 pin Photodiode, 1550nm NEP avalanche photodiode 1550nm sensitivity C30659-900-1060-1550nm C30659-900-R5B C30659-900-R8A C30950 C30902E C30659-1060-R8B c30954 datasheet abstract |
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| Abstract: C30950E, EL C30950F, FL C30950G, GL Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Temperature , be within the ranges specified below: C30950E, EL: 275 - 425 V * At 830 and 900 nm. C30950E, F, G C30950F, FL. C30950G, GL: 180 - 250 V. C30950EL, FL, GL 5.46 10.21S) C30950EL, FL, GL H 1.14 (0.045 , C30950 Series - ID 3030blQ DD0Ü04S 034 HCANA Electrical Characteristics at Ta = 22° C At an ambient ... | OCR Scan |
3 pages, |
af 830 05 C30952EL C30952FL C30952G C30952GL C30971E RCA Solid State amplifier RCA Solid State C30950E C30807 rca solid state Linear C30952F C30952E C30952 C30952 C30952 abstract |
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| Abstract: (Dla.) C30950E, EL C30817 C30817 (0.8 mm) C30950F, FL C30902E C30902E (0.5 mm) C30950G. GL C30902E C30902E (0.5 mm) Type Light Pipe Con Dla. C30950EL 0.50 mm C30950FL 0.25 mm C30950GL 0.25 mm Optical (C30950EL, FL, GL , Hermetically-Sealed Modified TO-8 Packages RCA Developmental Types C30950E, C30950F, and C30950G are Silicon , Developmental Types C30950EL, C30950FL, C30950GLare Silicon Avalanche Photodiode- Preamplifier Modules with , ) Printed in U.S.A./1-82 C30950 Series Supersedes C30950E.F.G, & EL.FL.GL, 10-79 This Material Copyrighted ... | OCR Scan |
2 pages, |
RCA Solid State amplifier avalanche photodiodes C30902E C30950F C30950FL C30950G C30950GL emitter "1060 nm" photodiode preamplifier RCA Solid State avalanche photodiode bias C30950 C30950EL 303DL1D C30950 303DL1D abstract |
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| Abstract: ranges specified below: C30950F, FL, Ç30950G, GL: 180 - 250 V. C30950EL, FL, GL 11.05 (0.435) WINDOW , ) of 22° Cand the DC reverse operating voltage (Vr) value supplied with each device.2 C30950E, EL C30950F, FL C30950G, GL Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Temperature Coefficient of Vr , ICiiiiner.com Electronic-Library Service CopyRight 2003 C A INC/ ELECTRO OPTICS C30950 Series -:- I IDE D â- , specific value of Vn is supplied with each C30950H, EL: 275 - 425 V » At 830 and 900 nm. C309S0E C309S0E, F, G ... | OCR Scan |
3 pages, |
RCA Solid State C30950 C30950E C30952EL C30807 C30952FL C30952G C30952GL C30971E C30952F C30952E C30952 C30952 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| C30950E | N/A | Amplifier Output Photo IC - PIN Photodiode w/preamp,50MHz BW,490kV/W rspat900nm | |
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| C30950EL | N/A | Amplifier Output Photo IC - PIN Photodiode w/preamp,50MHz BW,490kV/W rspat900nm | |
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| C30950F | N/A | Amplifier Output Photo IC - PIN Photodiode w/preamp,100MHz BW,140kV/W rspat900nm | |
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| C30950FL | N/A | Amplifier Output Photo IC - PIN Photodiode w/preamp,100MHz BW,140kV/W rspat900nm | |
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| C30950G | N/A | Amplifier Output Photo IC - PIN Photodiode w/preamp,200MHz BW,41kV/W rspat900nm | |
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| C30950GL | N/A | Amplifier Output Photo IC - PIN Photodiode w/preamp,200MHz BW,41kV/W rspat900nm | |