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Part : PDM3460IEC309-500 Supplier : American Power Conversion Manufacturer : Newark element14 Stock : - Best Price : $1,583.4600 Price Each : $1774.38
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C30950 Datasheet

Part Manufacturer Description PDF Type
C30950E PerkinElmer Optoelectronics si Pin Modules High Bandwidth 40 MHZ to 100 MHZ Original
C30950E RCA Solid State Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Scan
C30950E RCA Solid State Solid State Detectors Scan
C30950EL RCA Solid State Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Scan
C30950EL RCA Solid State Solid State Detectors Scan
C30950F RCA Solid State Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Scan
C30950F RCA Solid State Solid State Detectors Scan
C30950FL RCA Solid State Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Scan
C30950FL RCA Solid State Solid State Detectors Scan
C30950G RCA Solid State Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Scan
C30950G RCA Solid State Solid State Detectors Scan
C30950GL RCA Solid State Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Scan
C30950GL RCA Solid State Solid State Detectors Scan

C30950

Catalog Datasheet MFG & Type PDF Document Tags

C30950E

Abstract: C30817 , FL C30902E (0.5 mm) C30950G. GL C30902E (0.5 mm) Type Light Pipe Con Dla. C30950EL 0.50 mm C30950FL , -lead TO-8 package. RCA Developmental Types C30950EL, C30950FL, C30950GLare Silicon Avalanche Photodiode , C30950 Series Supersedes C30950E.F.G, & EL.FL.GL, 10-79 This Material Copyrighted By Its Respective , be within the ranges specified below: C30950E, EL: 275 - 425 V C30950F, FL. C30950G, GL: 180 - 250 V , Voltages Hermetically-Sealed Modified TO-8 Packages RCA Developmental Types C30950E, C30950F, and
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OCR Scan
C30817 photodiode preamplifier C30902 avalanche photodiode bias avalanche photodiodes emitter "1060 nm" 303DL1D

C30950E

Abstract: C30950EL below: C30950E, EL: 275 - 425 V C30950F, FL, C30950G, GL: 180 - 250 V. At 830 and 900 nm. C30950EL, FL , -lead TO -8 package. R C A Developmental Types C30950EL, C30950FL, C30950GLare Silicon Avalanche Photodiode , +70 °C °C Mechanical Characteristics Type C30950E, EL C30950F, FL C30950G, G L Diode Chip (Dla.) C30817 (0.8 mm) C30902E (0.5 mm) C30902E (0.5 mm) Type C30950EL C30950FL C30950GL Light Pipe Core Dla , C30950E.F.G, & EL.FL.GL, 10-79 E ELECTRO OPTICS C30950 Series _ _ - Electrical Characteristics at T a =
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OCR Scan
C30950 equivalent 30950G RCA Solid State 741S4
Abstract: '· Hermetically-sealed TO-8 package ï'· High reliability ï'· Pin-to-pin compatible with the C30950 & C30659 Series ï , FET front end designed to operate at higher transimpedance than our regular C30950 Series. The C30659 is pin-to-pin compatible with the C30950 Series with a negative output. An emitter follower is Excelitas Technologies
Original
C30659-UV-1 D-65199 C30659-UV-1-R

C30817E

Abstract: than the regular C30950 series. Features and Benefits The C30659 is pin-to-pin compatible with the C30950 series. The output of the C30659 is negative. An emitter follower is used as an output , recovery â'¢ Pin compatible with the C30950 series â'¢ Light entry angle: 130° â'¢ RoHS-compliant
PerkinElmer Optoelectronics
Original
C30817E C30817EH C30902EH C30954EH C30956EH C30645EH C30662EH

C30817

Abstract: photodiode preamplifier Hermetically-Sealed Modified TO-8 Packages RCA Developmental Types C30950E, C30950F, and C30950G are Silicon , Developmental Types C30950EL, C30950FL, C30950GL are Silicon Avalanche Photodiode- Preamplifier Modules with , Characteristics Type Diode Chip (Dia.) C3Q950E, EL C30817 (0.8 mm) C30950F, FL C30902E (0.5 mm) C30950G, GL C30902E (0.5 mm) Type Light Pipe Core Dia. C30950EL 0.50 mm C30950FL 0.25 mm C30950GL 0.25 mm Optical , supplied with each device.2 C30950E, EL C30950F, FL C30950G, GL Min. Typ. Max. Min. Typ. Max
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OCR Scan
RCA C30817 preamplifier voltage RCA Solid State power devices fast photodiode amplifier RCA Solid State amplifier 000D044 C30950H C309S0E 6084V1

C30817E

Abstract: regular C30950 series. The C30659 is pin to pin compatible with the C30950 series. The output of the , recovery Pin compatible with the C30950 series Light entry angle â130° For field use, it is
PerkinElmer Optoelectronics
Original
C30659-900-1060-1550 C30954E C30956E C30645E C30662E C30659-900-R8A
Abstract: specified below: C30950F, FL. C30950G. GL: 180 - 250 V. C30950E, EL: 275 - 425 V * At 830 and 900 nm , ) 2.6x10'13 W/Hz1/2 at 830 nm (200 MHz) RCA Developmental Types C30950E, C30950F, and C30950G are Silicon , Developmental Types C30950EL, C30950FL, C30950GL are Silicon Avalanche Photodiode- Preamplifier Modules with , ) C30950F, FL C30902E (0.5 mm) C30950G, GL C30902E (0.5 mm) Ughi Pipe Cor* Ola. C30950EL 0.50 mm C30950FL 0.25 mm C30950GL 0.25 mm Optical (C30950EL, FL, GL) Numerical Aperture of Light Pipe -
OCR Scan
0G000M4

diode d1n914

Abstract: d1n914 DIODE regular C30950 series. The C30659 is pin to pin compatible with the C30950 series. The output of the , recovery Pin compatible with the C30950 series Light entry angle 130° For field use, it is
PerkinElmer Optoelectronics
Original
C30659-1060-3A C30659-1060-R8B C30659-1550-R2A diode d1n914 d1n914 DIODE d1n914 InGaas PIN photodiode, 1550 NEP Silicon and InGaAs APD Preamplifier Modules C30659-900-R5B C30659-1550-R08B

SILICON APD Pre-Amplifier

Abstract: C30817E low noise GaAs FET front end designed to operate at higher transimpedance than E regular C30950 Series. The C30659 is pin-to-pin compatible with the C30950 Series with a negative output. An emitter , overload recovery ï'· Pin-to-pin compatible with the C30950 Series ï'· Light entry angle, over 130° ï
Excelitas Technologies
Original
SILICON APD Pre-Amplifier 900/1060/1550/1550E
Abstract: each device.» C30950E, EL C30950F, FL C30950G, GL Min. Typ. Max. Min. Typ , voltage values w ill be within the ranges specified below: C30950F, FL. C30950G, GL: 180 - 250 V. C30950E, EL: 275 - 425 V * At 830 and 900 nm. C30950EL, FL, GL C30950EL, FL, GL C30950E, F, G , Optics and Devices| Lancaster, PA 17604 ID 6 8 G/CANADA/OPTOELEK , C30950 Series 3Q30blQ -
OCR Scan
C30952 C30952E C30952F C30952G C30952EL C30952FL

C30950E

Abstract: C30950 equivalent with each device. The voltage values will be within the ranges specified below: C30950E, EL: 275 - 425 V C30950F, FL, C30950G, GL: 180 - 250 V. At 830 and 900 nm. C30950EL, FL, GL C30950E, F, G -B-J 15 (0.6) D IA . D IA . C30950EL, FL, GL a . : 0 (0.55) 11.05(0.435) W IN D O W D IA , 1 , Devices!Lancaster, PA 17604 E ELECTRO OPTICS C30950 Series _ _ - IDE D 3Ö741S4 D000D4S 3 GEEO , operating voltage ( V r ) value supplied with each device.2 C30950E, EL Min. Temperature Coefficient o f Vr
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OCR Scan
rca 514 RCA 3,5 MM 4-PIN C30971 C30952GL 3095OF

C30952E

Abstract: C30952F : C30950E, EL: 275 - 425 V * At 830 and 900 nm. C30950E, F, G C30950F, FL. C30950G, GL: 180 - 250 V. C30950EL, FL, GL 5.46 10.21S) C30950EL, FL, GL H 1.14 (0.045) 0.74 10.029) Pin Connection* 1: Signal , ° C and the DC reverse operating voltage (Vr) value supplied with each device.» C30950E, EL C30950F, FL C30950G, GL Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Temperature Coefficient of V , Materr?ft'*^0^*righted By Its Respective Manufacturer E fi & G/CANAM/OPTOELEK C30950 Series - ID 3030blQ
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OCR Scan
rca solid state Linear C30807 af 830 05 LS-6084 C30971E LS-G084V1

C30952E

Abstract: C30950E operating voltage (Vr) value supplied with each device.2 C30950E, EL C30950F, FL C30950G, GL Min , 2003 C A INC/ ELECTRO OPTICS C30950 Series -:â'" I IDE D â  ?4fl4b?S 0000045 I - TV/- é 7 , measurements are made with the device 1 A specific value of Vn is supplied with each C30950H, EL: 275 - 425 V , voltage values will be within the ranges specified below: C30950F, FL, Ç30950G, GL: 180 - 250 V. C30950EL, FL, GL 11.05 (0.435) WINDOW DIA." J,* 1 I 15 (0.61 DIA. .0 (0.55) DIA. r OPTIC DISTA râ
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OCR Scan

FND-100Q

Abstract: FND-100 DTC) ultra low-noise APDs and modules Preamplifiers C30950 and C30659 devices use some of these , TO packages. The C30608E uses a transimpedance FET amp. The C30950E and C30919E use bipolar amps , C30950E C30817[Si APD] L 0.8 560 0.7 20 0.036 50 275 - 425 C30919E C30817
PerkinElmer Optoelectronics
Original
FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q ISO-9001 TSI16949 CAT0506P

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 1000 0.7 25 .025 40 275-425 C30950E C30817 C30919E C30817 Custom 32 (@
PerkinElmer Optoelectronics
Original
C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor RS232

APD 1550 nm photodetector

Abstract: C30950EH 14 pins DIL package allowing nearly 100 % coupling efficiency. The C30950EH offers a low cost , gain amplifier. The C30919E uses the same architecture of the C30950EH with the addition of a high , 0.7 TO, 1 in C30950EH C30817 0.8 50 520 560 140 27 0.7 TO-8 LLAM
Excelitas Technologies
Original
APD 1550 nm photodetector HUV-1100 C30659-900-R5BH C30659-900-R8AH C30659-1060-R8BH C30954 C30659-1060-3AH C30956

C30817

Abstract: allowing nearly 100â'‰% coupling efficiency. The C30950EH offers a low cost alternative to the C30659 , C30919E uses the same architecture of the C30950EH with the addition of a high voltage temperature , 0.8 40 - 1000 250 20 0.7 TO,â'‰1â'‰in C30950EH C30817 0.8 50 520
Excelitas Technologies
Original
C30659-1550-R08BH C30645 C30659-1550-R2AH LLAM-1550-R2AH C30662 LLAM-1060-R8BH