NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| C30919E | N/A | Photodiode-Preamplifier Module |
3 pages, |
Scan | |
| C30919E | RCA Solid State | Photodiode |
3 pages, |
Scan | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Photodiode C30919E DATA SHEET Photodiode-Preamplifier Module Completely Hybridized , â- Low Power Consumption RCA Type C30919E is a completely hybridized temperature compensated silicon , responsivity of the C30919E is constant and independent of modulation frequency over the full system bandwidth , 92LS-5847 92LS-5847 Figure 1 - Typical Spectral Responsivity Characteristic RCA Inc., Electro Optics C30919E , t. Figure 4 - Dimensional Outline C30919E 92LS-58S1 92LS-58S1 Figure 5 - Schematic of C30919E (Bottom View ... | OCR Scan |
3 pages, |
photodiode amplifier C30919E avalanche photodiode bias C30919E abstract |
| Abstract: â- Low Power Consumption « RCA Type C30919E is a completely hybridized temperature compensated , , the responsivity of the C30919E is constant and independent of modulation frequency over the full , Material Copyrighted By Its Respective Manufacturer E G C30919E & 6/CANADA/OPTOELEK 10 3030bl0 0000140 , ICANA _ C30919E (OJS) WINDOW DIA. 264 (1.00101 A. _ 23.57 (0.9281 DIA. 046 (0.018)-TYP. 6.48 - , COMPENSATION ADJUST (SUPPLIED WITH DEVICE) Figure 5 - Schematic of C30919E (Bottom View of Device) Figure 4 - ... | OCR Scan |
3 pages, |
preamplifier voltage C30919E avalanche photodiode avalanche photodiode bias ELLS 110 datasheet abstract |
| Abstract: C30919E use bipolar amps, while the C30659 C30659 uses a FET transimpedance amplifier. Fiber-Optic Receivers , constant, APD gain will increase with decreasing temperature. The C30919E has a temperature compensation , C30919E C30817 C30817[Si APD] [temp.compens.] N 0.8 1000 0.7 25 0.025 40 275 - 425 ... | Original |
35 pages, |
APD InGaAs array nir emitter leds with 700 to 900 nm C30817 C30808E C30724 C30954 C30659-1060-3A FFD-100 C30845E C30927E-01 InGaAs APD quadrant PGEW2S09 C30659-1550-R2A datasheet abstract |
| Abstract: xq1560 A906013 A906012 lhi878 LHI968 C30919E C30817 C30817 Custom 32 (@ 830 nm) 0.7 2 60 NEP Bandwidth Photo. Diod. @900 nm MHz (3 ... | Original |
50 pages, |
TPS534 PGEW3S09 C1983 A106013 C30927E-01 C1952 C1973 transistor c1383 pin configuration of C1383 transistor Light-Dependent Resistor specification c1983 transistor C1383 NPN transistor C1383 transistor NPN transistor c1383 datasheet abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |