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HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
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TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments

C2655 NPN Transistor

Catalog Datasheet MFG & Type PDF Document Tags

C2655 NPN Transistor

Abstract: C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm · · · · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 us (typ.) Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25 , (1) classification O: 70 to 140, Y: 120 to 240 Marking C2655 Part No. (or abbreviation
Toshiba
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C2655 NPN Transistor toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics

C2655 NPN Transistor

Abstract: transistor C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · High-speed switching: tstg = 1.0 s (typ.) · Complementary to 2SA1020. Absolute Maximum Ratings (Ta = , C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates
Toshiba
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C2655 transistor c2655 equivalent 2SC2655 Silicon NPN Epitaxial Type C2655 Y 06 C2655 Y 40 C2655 BR

C2655 NPN Transistor

Abstract: transistor C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications · Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · High-speed switching: tstg = 1.0 us (typ.) · Complementary to 2SA1020. Maximum Ratings (Ta = 25 , Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line
Toshiba
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C2655(Y)-T BR C2655 Transistor c2655 datasheet RX-2-G

C2655 NPN Transistor

Abstract: C2655 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · High collector power dissipation: PC = 900 mW · High-speed switching: tstg = 1.0 s (typ.) · Complementary to 2SA1020. Absolute Maximum Ratings (Ta = , Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator Note 3
Toshiba
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C2625 transistor

Abstract: C5679 transistor (power ok, DC ok, etc) is given by an "open collector" of an NPN transistor, with the emitter connected to the negative line of the main output. Unless requested otherwise the transistor will be energised , 80-160 V Models C2650 C2651 C2652 C2653 C2654 C2655 C2659 C2656 C2657 C2658 160-320 V
XP Power
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C2625 transistor C5679 transistor TRANSISTOR C3675 C5679 transistor c5855 c3746 transistor C300-C4700 C5600-C5800