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Part Manufacturer Description PDF & SAMPLES
PAM2305CGF180 Diodes Incorporated Switching Regulator, Current-mode, 1A, 1800kHz Switching Freq-Max, PDSO6
AZ1084CS2-5.0TRE1 Diodes Incorporated Fixed Positive LDO Regulator, 5V, 1.5V Dropout, BIPolar, PSSO2, ROHS COMPLIANT, TO-263, 3 PIN
AZ431LBRTR-E1 Diodes Incorporated Two Terminal Voltage Reference, 1 Output, 1.24V, Trim/Adjustable, BIPolar, PSSO3, ROHS COMPLIANT, SOT-89, 3 PIN
DDTB123EU-7-F Diodes Incorporated Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
APD260VGTR-E1 Diodes Incorporated Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 60V V(RRM), Silicon, DO-15, ROHS COMPLIANT PACKAGE-2
AP7335-25WG-7 Diodes Incorporated Fixed Positive LDO Regulator, 2.5V, 0.2V Dropout, PDSO5, GREEN, SOT-25, 5 PIN

C20 diode, TO

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: atVâ'ž=3V f = 50MHz Capacitance Ratio C2/C20, f = 1 MHz Glass DO-7 Plastic E-line Min. Nom , Reverse Voltage Leakage Current, lR = 0.02^A at VR = 20V To order devices with 2V nominal capacity ± 10 , atVâ'ž = 3V f = 50MHz Capacitance Ratio C2/C20, f = 1 MHz Device Marking SOT-23 Min. Nom. Max. Min , Current, Ir =0.02/jA at VR = 20V To order devices with 2V nominal capacity ± 5% add suffix B N.B , 1 MHz f = 1 MHz at VR = 3V Type Vr Ctot C2/C20 f = 50MHz Volts pF max. min. typ. max -
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ZC800 ZC820 ZC801 ZC821 ZC802 ZC822 marking NB D9 sot-23 ZC82 ZC804 C2/C20
Abstract: Gain, while being able to achieve high performance for 0.7â'"2.9 GHz applications with up to +39 dBm , . The device incorporates proprietary bias circuitry to compensate for variations in linearity and , bias allows the AP561 to operate directly off a commonly used +12V supply and has the added feature of a +5V power down control pin. RoHS-compliant 5x6mm DFN package is surface mountable to allow for low manufacturing costs to the end user. Pin No. 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 TriQuint Semiconductor
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AP561-F
Abstract: ) GENERAL APPLICATIONS LOW INDUCTANCE FOR USE TO 2.5 GHz ABRUPT - HYPERABRUPT Ul 1 MINIATURE GLASS VERY , RATIO C2/C20 min/typ Q4 §> 50 MHi TYPE NO RATIO C2/C20 min/max 04 @ SO MHz min TYPE NO RATIO C2/C30 , MHz and VR specified To order devices with CT Nom t 5 0 % or_ 2 0% add Suffit B or C respecirvefy (1 , Vottage VR AsSPECIFlEO Junction Temperature Ti +175°C Max Storage Temperature Tstg -65°C to 200 , dimensions in inches, to convert to millimeters, multiply by 2S.4 For other types not listed he your -
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SQ1213A G702A SQ1214A SQ1714 SQ1215A G603A HA1930A S0171 DIODE 1N54 1N547S T-07-19 C4/C25
Abstract: atVâ'ž=3V f = 50MHz Capacitance Ratio C2/C20, f = 1 MHz Glass DO-7 Plastic E-line Min. Nom , Reverse Voltage Leakage Current, lR = 0.02^A at VR = 20V To order devices with 2V nominal capacity ± 10 , atVâ'ž = 3V f = 50MHz Capacitance Ratio C2/C20, f = 1 MHz Device Marking SOT-23 Min. Nom. Max. Min , Current, Ir =0.02/jA at VR = 20V To order devices with 2V nominal capacity ± 5% add suffix B N.B , 1 MHz f = 1 MHz at VR = 3V Type Vr Ctot C2/C20 f = 50MHz Volts pF max. min. typ. max -
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ZC803 ZC823 ZC825 SOT-23 ZC2800E Z6 DIODE SOT-23 MARKING w5 ZC824 ZC805 ZC825 ZC806
Abstract: 125 °C Storage Temperature Range Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at , Nominal Capacitance in pF @ VR=2V, f=1MHz Minimum Q @ VR=3V f=50MHz Capacitance Ratio C2 /C20 , Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb =25°C) 1 1 VR Junction , =1MHz Minimum Q @ VR=3V f=50MHz Capacitance Ratio C2 /C20, at f=1MHz MIN NOM MAX 8 10 Zetex Semiconductors
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ZC826 822 diode c20 diode 3108 DIODE Silicon Tuner IR 3108 DSA003761
Abstract: drive MOSFET gate capacitances CQ2GS and CQ1GS, respectively. C20 and C22 should be chosen to ensure , overload, open loop and thermal protection · 300 kHz switching frequency to allow sufficient transformer , voltages and linearly reduces the maximum duty cycle with input voltage to prevent core saturation during load transients. Components D1, D2, C9, and L2 implement a resonant clamp circuit to catch and , time. Operation DPA-Switch greatly simplifies the design compared to a discrete implementation Power Integrations
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DI-52 DPA426RN zener diode c20 5t zener diode c24 5t zener c15 5t fr9220 zener c22 5t fr9220-
Abstract: reduces the maximum duty cycle with input voltage to prevent core saturation during load transients. Components D1, D2, C9, and L2 implement a resonant clamp circuit to catch and re-circulate the transformer , thermal protection · 300 kHz switching frequency to allow sufficient transformer reset time · 3.55 x , design compared to a discrete implementation. The capacitor coupled synchronous rectifier drive used in , k C22 1 nF D3 BAV19WS 4 L2 220 uH -VIN C20 C21 1 nF 2.2 nF VR20 15 V Q2 Power Integrations
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DPA426R EFD20-3F3 high voltage gate drive transformer transformer mosfet gate drive circuit transformer bobbin 4 pin C15 5T C20 5t c22 5t EFD25 PI-3551-060503 EFD20
Abstract: corresponding to an inductance of 100 uH is C20. B. Select an appropriate capacitor value and voltage rating , voltage rating values corresponding to the capacitor code C20 are the: Surface Mount: 33 uF/25V Sprague , . Requiring a minimum number of external components, these regulators are simple to use and include patented , . Also included in the datasheet are selector guides for diodes and capacitors designed to work in , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the National Semiconductor
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LM2674 capacitor CV-BS Series sanyo IR 30WQ05F LM2674M33 3A Step Switching voltage Regulator 10BQ050 rcr110d-680l
Abstract: ZC2811 15 410 100 10 20 1.2 250 ZC5800 50 410 200 35 15 2.0 250 'Power Dissipation derate to zero at 200°C and measured using an infinite heat sink. Operating Temperature tamb -65 to +200°C. Storage Temperature Tstg -65 to +200°C Note: Matched pairs or Quads of diodes can be supplied on request. STANDARD MATCHING SPECIFICATIONS: ZC2800-ZC5800 ZC2811 Max. AV=20mV, lF=0.5 to 5.0 mA Max. AV=20mV, lF = 1 to 10 , Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning diodes -
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ZC2800 ZC830 ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 Scans-00107834 S0T-23 ZC830A ZC831A ZC832A ZC833A
Abstract: communications equipment that is connected to analog telephone networks. Many different standards exist to regulate the characteristics of devices attached to phone networks throughout the world. Several of the , performance and cost. Manufacturers using the Si3034/ 38/44 have an opportunity to balance these trade-offs to optimize their systems. This document discusses the requirements of sections of the IEC1000 , . Several approaches are identified which achieve compliance to these requirements. The IEC1000 Silicon Laboratories
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diode zener c25 diode zener c29 transistor c323 zener DIODE C25 zener diode c18 st ST transistor c322 IEC1000-4 IEC1000-4-4 IEC1000-46 IEC1000-4-6
Abstract: corresponding to an inductance of 100 uH is C20. B. Select an appropriate capacitor value and voltage rating , voltage rating values corresponding to the capacitor code C20 are the: Surface Mount: 33 uF/25V Sprague , . Requiring a minimum number of external components, these regulators are simple to use and include patented , . Also included in the datasheet are selector guides for diodes and capacitors designed to work in , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the National Semiconductor
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35C18 MOTOROLA 31DQ05 Nichicon PL(M) LM267X LM2674-ADJ
Abstract: . The capacitor code corresponding to an inductance of 68 uH is C20. B. Select an appropriate , A, C20. The capacitance and voltage rating values corresponding to the capacitor code C20 are the , number of external components, these regulators are simple to use and include patented internal , included in the datasheet are selector guides for diodes and capacitors designed to work in switch-mode , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the National Semiconductor
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LM2675 LM2675-ADJ LM2675-3 sanyo os-con sc Nichicon Capacitor pl series SM CAPACITORS SERIES LM2675 equivalent
Abstract: 15­20V row. The capacitor code corresponding to an inductance of 68 uH is C20. B. Select an , section A, C20. The capacitance and voltage rating values corresponding to the capacitor code C20 are , number of external components, these regulators are simple to use and include patented internal , included in the datasheet are selector guides for diodes and capacitors designed to work in switch-mode , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the National Semiconductor
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PE-53822 hfq series PE-53830 sanyo oscon SC Sprague 594D
Abstract: the 15­20V row. The capacitor code corresponding to an inductance of 100 uH is C20. B. Select an , section A, C20. The capacitance and voltage rating values corresponding to the capacitor code C20 are , . Requiring a minimum number of external components, these regulators are simple to use and include patented , . Also included in the datasheet are selector guides for diodes and capacitors designed to work in , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the National Semiconductor
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LM2674-5 OS-con sanyo RL1500-150 LM2674M-3.3 LM2674-3 LM267
Abstract: rating values corresponding to the capacitor code C20 are the: Surface Mount: 33 uF/25V Sprague 594D , number of external components, these regulators are simple to use and include patented internal , included in the datasheet are selector guides for diodes and capacitors designed to work in switch-mode , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the , version 1.0. Features n n n n n n n n n n n n n n n Efficiency up to 96% Available National Semiconductor
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sanyo electrolytic capacitors KV capacitor 220 uF
Abstract: control of doping and profile. Its use enables devices to be produced with consistant characteristics to closely controlled tolerances. Applications of the technique to the manufacture of Hyperabrupt tuner , Microminiature SOT-23 High reliability glass DO-7 NOT TO SCALE # E-LINE SOT-23 ZC820 Series ZC830A Series , Series Ti 125 °C Storage Temperature Range Tfitg -65 to +200 °C â'¢Power dissipation is calculated , Ratio C2/C20, f = 1 MHz Glass DO-7 Plastic E-line Min. Nom. Max. Min. Max. ZC800 ZC820 8 10 -
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NB J7 marking NB SOT-23 diode marking w8 Y1 SOT-23 marking J7 diode DO diode marking 5d ZC834A ZC835A ZC836A
Abstract: rating values corresponding to the capacitor code C20 are the: Surface Mount: 33 uF/25V Sprague 594D , . Requiring a minimum number of external components, these regulators are simple to use and include patented , . Also included in the datasheet are selector guides for diodes and capacitors designed to work in , limiting, as well as thermal shutdown for full protection under fault conditions. To simplify the , . Features n n n n n n n n n n n n n n n Efficiency up to 96% Available in SO-8 and 8 National Semiconductor
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lm2674 adj DIODE Equivalent list sr104 sanyo WF capacitor os-con SM Series TTL - 24v Level Converter
Abstract: aram eter Symbol Min Reverse Voltage Reverse Current Diode Capacitance Vu lu C2.0 C4.0 C6.0 C8.0 Series , - - 2.20 - C2.0/C8.0 ·Capacitance meter : I I P 4279A or equivalent instrum ents , of element that is next to each other in same real is within 3% at C2, C 4, C6, and C8. 9-2. C L A S S IF IC A T IO N ( Unit : pF ) ^ ^ ''\ R a n k 1 2 3 4 C2.0 Min Max 41.33 42.59 42.49 , support system is a product or system intended to support or sustain life which, if it fails, can be -
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KV1310 DB3-A037 1310N KV1310N T092-3 P3-J020
Abstract: C16 1 C2 10 1 C12 1 C20 1 C10 15 30 to 37 1 100 1 C11 1 , active functions for a step-down (buck) switching regulator capable of driving up to 3A loads with , LM2676 are available from several manufacturers to greatly simplify the design process. The LM2676 , down the regulator to a low 50uA quiescent current standby condition. The output voltage is guaranteed to a ± 2% tolerance. The clock frequency is controlled to within a ± 11% tolerance. n Efficiency National Semiconductor
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lm2676 step down regulator LM2676S LM2676S-12 LM2676S-ADJ nichicon 1000uF 260KH
Abstract: mount package. The single-stage amplifier has 13 dB Gain, while being able to achieve high performance for 0.7â'"2.9 GHz applications with up to +39 dBm of compressed 1dB power. The AP561 uses a high reliability +12V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to , negative bias voltage; an internal active bias allows the AP561 to operate directly off a commonly used , package is surface mountable to allow for low manufacturing costs to the end user. Pin No. Label TriQuint Semiconductor
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