C1815LT1 - Datasheet Archive

 

C1815LT1 TRANSISTOR (NPN) SOT-23 * "G" Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0.

 

C1815LT1 C1815LT1 C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * "G" Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25 ) 2. 4 1. 3 0. 4 0. 95 TJ, Tstg: -55 2. 9 Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 0. 95 0.2 1. 9 PCM: 1. 0 Power dissipation Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic = 0.1mA, IB =0 50 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICEO VCE=50V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA DC current gain hFE(1) VCE= 6V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 10mA 1 V fT Transition frequency VCE=10V, IC= 1mA f=30MHz 130 400 80 MHz CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING WEITRON http://www.weitron.com.tw L H 130-200 200- 400 C1815LT1 C1815LT1=HF C1815LT1 C1815LT1 WEITRON http://www.weitron.com.tw C1815LT1 C1815LT1 WEITRON http://www.weitron.com.tw