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Part Manufacturer Description Datasheet BUY
LTC1685IS8#PBF Linear Technology LTC1685 - 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTC1685CS8#TR Linear Technology LTC1685 - 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices
LTC1685CS8#PBF Linear Technology LTC1685 - 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices
LTC1685CS8 Linear Technology LTC1685 - 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices
LTC1685IS8#TRPBF Linear Technology LTC1685 - 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices
LTC1685IS8 Linear Technology LTC1685 - 52Mbps, Precision Delay, RS485 Fail-Safe Transceiver; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices

C1685 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: s ) 3A OUTPUT TRANSISTOR (each channel) Power dissipation @ 25°C a m bient 150 mW Derate , CONDITION V 10 . OUTPUT TRANSISTOR (lF= 0 ) BVceq 30 85 Breakdown voltage, emitter to , TRANSISTOR Non-saturated rise time, fall time (Note 3) 2.4 fi s l0= 2 mA, Vce=10 V, RL= io o n , . Normalized Toff vs. RBE Vcc = 10V C1685 lo â'" (mA) M CT6 MCT61 MCT62 MCT66 C1296A Fig. 10 , ' C1685 Fig. 9. Switching Time vs. 1C 4- 90% I \ 10* T I I I I 0, - M CT6 MCT61 MCT62 -
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transistor c1684 smd TRANSISTOR 27e an c1685 transistor C1681 C1636 C1685 R transistor 0GQ3577 C2091 E50151 C2085 MCT9001
Abstract: .135 mW Derate linearly from 25°C.1.8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 "C , Reverse leakage current I* .35 10 ÃA Vâ'ž=3.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter , 100Ì1 Fig. 10) 0 5 10 15 20 tc â'" !mAj C1685 Fig. a Switching Time vs. IC Vcc = 10V -
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MCT2200 MCT2201 MCT2202 C2079 C1679 C1680 NPN C1685 STI603A E90700
Abstract: OPTOELECTRONICS TRANSISTOR OUTPUT OPTOCOUPLER H11A1 PACKAGE DIMENSIONS AAA 0.40 DIMENSIONS IN mm , TRANSISTOR Power dissipation @ 25°C . Derate linearly from 25°C . 60 mA . 6V .3.0 A . 100 , V _100 mA 1-79 TRANSISTOR OUTPUT OPTOCOUPLER IFIIELECIUlItS " ELECTRO-OPTICAL CHARACTERISTICS {25 , 10 fiA Vâ'ž=3.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter 30 45 V i_lo=10mA, lF , Qso 0.5 PF f=1 MHz 1-80 TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS ELECTRICAL CHARACTERISTIC -
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C1682 TRANSISTOR C1685 C1684 transistor transistor c1684 NPN optocoupler H11A1 C1682 transistor c1684 C1683 C1684 C1294
Abstract: TRANSISTOR Power dissipation at 25°C . .150 mW Derate linearly from 25 , 30 7 V OUTPUT TRANSISTOR Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Transistor static forward current transfer ratio V V V lc= 1 0 /iA , lE= 0 , lF , - imAj Fig. 9. S w itchin g Time vs. 1C C1685 C1296A Fig. 10. S w itching Time Test C ircuit -
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TIL111 C1685 npn C1686
Abstract: linearly from 25°C . OUTPUT TRANSISTOR Power dissipation at 25°C. Derate linearly from 25 , 1.2 1.4 V lF=16 mA OUTPUT TRANSISTOR Collector-base breakdown voltage v(br)cbo 70 V lc=10 ytlA, lE = , breakdown voltage v(br)ebo 7 V lE=10 /¿A, lc=0, lF=0 Transistor static forward current transfer ratio hFE , 20 C1685 Fig. 11. Switching Time Waveforms -
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ST1603A
Abstract: case) output transistor »Power dissipation at 25°C ambient . Derate linearly above 25 , icon Fig. 10) \l \ â'¢Rl )OUTPUT INPUT 0V ' < 10 15 20 Ic â'" imA) C1685 Fig. 9 , ) shorted together and the output terminals (transistor) shorted together. 2. The current transfer ratio -
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C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 C2Q79 C16B3 C1S94
Abstract: .3.0 V Peak forward current (1 ¡xs pulse, 300 pps) .3 A OUTPUT TRANSISTOR (each channel) Power , lâ'ž .001 10 fjA Vn=3.0 V Junction capacitance c, 50 PF VF=0 V OUTPUT TRANSISTOR (lF , CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITION SWITCHING TIMES, OUTPUT TRANSISTOR Non-saturated rise , -o OUTPUT IC 0 5 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching Time vs. IC C1296A Fig. 6. Switching -
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ground relay MCT6 equivalent C1243
Abstract: °C ambient.135 mW Derate linearly from 25°C.1.8 mW/°C OUTPUT TRANSISTOR Power , 65 pF VF=1 V, f=1 MHz Reverse leakage current IR .35 10 /xA VR=3.0 V OUTPUT TRANSISTOR Breakdown , ) 5 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching Time vs. IC Vce = 10V â'¢Rl > OUTPUT < C1296A -
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MOC8111 MOC8112 MOC8113 SSs 02 TL431 equivalent IF20
Abstract: °C ambient.90 mW Derate linearly from 25°C.1.2 mW/°C OUTPUT TRANSISTOR Power , OUTPUT TRANSISTOR DC forward current gain hFE 100 420 Vce=5 V, lc=100 ¿¿A Breakdown voltage , . 10) 5 10 15 20 lo â'" (mA) C1685 Fig. 9. Switching Time vs. IC Ì Rbe 1 i-O OUTPUT < C1296A -
OCR Scan
MCT271 KJh transistor free IC npn transistor phototransistor-type
Abstract: °C .1.1 mW/°C OUTPUT TRANSISTOR (each channel) Power dissipation at 25°C ambient.150 mW , capacitance c, 50 PF VF=0V; f=1MHz Reverse leakage current Ir 10 ÃA Vâ'ž=5.0V OUTPUT TRANSISTOR Breakdown , 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching Time vs. IC VCE =10V â'¢Rl (OUTPUT X IC C1296A -
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optocoupler 5v to 24V 24LC24 JA3000
Abstract: .135 mW . . . . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25°C ambient . . 200 , OUTPUT TRANSISTOR Breakdown voltage Collector to emitter b v ceo 30 45 V lc= 1.0 mA, lF , . 1C C1296A C1685 Fig. 10. S w itchin g Time Test C ircuit Fig. 11. S w itchin g Time -
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Abstract: . 3.0 A . 135 mW . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation @ 2 5 ° C , = 1 MHz VR- 3 . 0 V OUTPUT TRANSISTOR Breakdow n voltage C ollector to em itter Em itter to , n Q LU N 2 cr O < z Ic - '.mA.i C1685 Fig. 5. S w itching Time vs. IC Fig. 6. S w -
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M0C8111 M0C8113 OC8112 m0c8112 OC811 I2-54 C2079A OC8113
Abstract: PTOELECIRDNICS TRANSISTOR OUTPUT OPTOCOUPLER H11A1 PACKAGE DIMENSIONS DESCRIPTION The , .100 mW . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation @ 25°C . . , H OPTOELECTRONICS TRANSISTOR OUTPUT OPTOCOUPLER ELECTRO-OPTICAL CHARACTERISTICS (25 , , = 3 .0 V lF= 1 0 mA OUTPUT TRANSISTOR Breakdow n voltage C ollector to em itter C ollector to , 1-80 OPTOELECTUOHICS TRANSISTOR OUTPUT OPTOCOUPLER II ELECTRICAL CHARACTERISTIC CURVES fTA -
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C1661
Abstract: 3 V . 3.0 A . 150 mW .2 mW/°C OUTPUT TRANSISTOR Power dissipation , d e static reverse current 10 1.2 mA 1.4 V lp=16 m A OUTPUT TRANSISTOR C , breakdow n voltage V(B )E R BO 7 V lE= 1 0 l>E 100 Transistor static forw ard , O R be z IC â'" (mA) C 1296A C1685 Fig. 10. S w itchin g Time Test C ircu it -
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Abstract: . 3.0 V Peak forward current (1 ÃS pulse, 300 pps).3 A OUTPUT TRANSISTOR (each channel) Power , 50 PF VF=0V OUTPUT TRANSISTOR (lF=0) Breakdown voltage, collector to emitter BVCE0 30 85 V lc , , OUTPUT TRANSISTOR Non-saturated rise time, fall time (Note 3) 2.4 lc=2 mA, VCE=10 V, rl=iooo , Rl = (See = 10V ioon Fig. 10) 0 5 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching -
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Abstract: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE , OUTPUT TRANSISTOR Power dissipation @ 25°C . .150 mW 2.67 mW/°C Derate , 74L.L.& S1 DODfciObi à 71 1-79 S U I TRANSISTOR OUTPUT OPTOCOUPLER , O Forw ard voltage Forw ard vo ltag e tem perature c oefficient OUTPUT TRANSISTOR B reakdow , Vto = 5 0 0 VDC f= 1 MHz E l i TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS -
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ST1G03A DDDLD71
Abstract: OUTPUT TRANSISTOR (each channel) Power dissipation at 25°C a m b ie n t. . . . 150 mW Derate , =5.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter bvc o e 55 V lc=0.5 mA; lF= 0 , < 5 cc O z lc â'" (m A ) C1685 C 1296A Fig. 6. Switching Time Test Circuit Fig. 5 -
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Abstract: . . . 1.1 mW/°C 1-177 OUTPUT TRANSISTOR (each channel) Power dissipation at 25°C a m b ie n t , 50 1.3 lr = 10 m A V F= 0 V ; f = 1 M H z V b= 5 .0 V OUTPUT TRANSISTOR B reakdow n voltage , 10V o z o O UTPUT X Û Ili N _i < 2 cc o 2 Ic - -
OCR Scan
ic1680 optocoupler 24V RZ-5-C
Abstract: °C.1.8mW/°C OUTPUT TRANSISTOR Power dissipation at 25°C ambient. 200 mW Derate linearly from 25 , OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVceo 30 45 V lc=1.0 mA, lF=0 Collector to , = (See = 10V ioon Fig. 10) 0 5 10 15 20 lc â'" (mA) C1685 Fig. 9. Switching -
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TMT Isolator c168 100X1
Abstract: .135 mW Derate linearly from 25°C. 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 , C1684 10 15 le â'" (mAì 20 C1685 Fig. 7 Normalized ton vs. Rbe Fig. 8 Normalized Switching Time vs -
OCR Scan
C2090 Cl684 MCT-2201 H127 Diode Equivalent rl 2z 30TD12 MCT2200/0Z MCT2201/1Z MCT2202/2Z MGT2202/2Z
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