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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

C1685 transistor

Catalog Datasheet MFG & Type PDF Document Tags

C1685

Abstract: C1685 transistor s ) 3A OUTPUT TRANSISTOR (each channel) Power dissipation @ 25°C a m bient 150 mW Derate , CONDITION V 10 . OUTPUT TRANSISTOR (lF= 0 ) BVceq 30 85 Breakdown voltage, emitter to , TRANSISTOR Non-saturated rise time, fall time (Note 3) 2.4 fi s l0= 2 mA, Vce=10 V, RL= io o n , . Normalized Toff vs. RBE Vcc = 10V C1685 lo â'" (mA) M CT6 MCT61 MCT62 MCT66 C1296A Fig. 10 , ' C1685 Fig. 9. Switching Time vs. 1C 4- 90% I \ 10* T I I I I 0, - M CT6 MCT61 MCT62
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C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor C1636 C1681 0GQ3577 C2091 E50151 C2085 MCT9001

C1679

Abstract: C1680 .135 mW Derate linearly from 25°C.1.8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 "C , Reverse leakage current I* .35 10 ÃA Vâ'ž=3.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter , 100Ì1 Fig. 10) 0 5 10 15 20 tc â'" !mAj C1685 Fig. a Switching Time vs. IC Vcc = 10V
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MCT2200 MCT2201 MCT2202 C2079 C1679 C1680 STI603A E90700

C1685 transistor

Abstract: transistor c1684 OPTOELECTRONICS TRANSISTOR OUTPUT OPTOCOUPLER H11A1 PACKAGE DIMENSIONS AAA 0.40 DIMENSIONS IN mm , TRANSISTOR Power dissipation @ 25°C . Derate linearly from 25°C . 60 mA . 6V .3.0 A . 100 , V _100 mA 1-79 TRANSISTOR OUTPUT OPTOCOUPLER IFIIELECIUlItS " ELECTRO-OPTICAL CHARACTERISTICS {25 , 10 fiA Vâ'ž=3.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter 30 45 V i_lo=10mA, lF , Qso 0.5 PF f=1 MHz 1-80 TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS ELECTRICAL CHARACTERISTIC
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C1682 TRANSISTOR C1685 C1684 transistor C1685 R transistor transistor c1684 NPN optocoupler H11A1 C1682 transistor C1683 C1684 C1294

transistor c1684

Abstract: C1685 transistor TRANSISTOR Power dissipation at 25°C . .150 mW Derate linearly from 25 , 30 7 V OUTPUT TRANSISTOR Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Transistor static forward current transfer ratio V V V lc= 1 0 /iA , lE= 0 , lF , - imAj Fig. 9. S w itchin g Time vs. 1C C1685 C1296A Fig. 10. S w itching Time Test C ircuit
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TIL111 C1685 npn C1686

C1685

Abstract: C1685 transistor linearly from 25°C . OUTPUT TRANSISTOR Power dissipation at 25°C. Derate linearly from 25 , 1.2 1.4 V lF=16 mA OUTPUT TRANSISTOR Collector-base breakdown voltage v(br)cbo 70 V lc=10 ytlA, lE = , breakdown voltage v(br)ebo 7 V lE=10 /¿A, lc=0, lF=0 Transistor static forward current transfer ratio hFE , 20 C1685 Fig. 11. Switching Time Waveforms
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NPN C1685 ST1603A

C1684 r .85 transistor

Abstract: 100JjA case) output transistor »Power dissipation at 25°C ambient . Derate linearly above 25 , icon Fig. 10) \l \ â'¢Rl )OUTPUT INPUT 0V ' < 10 15 20 Ic â'" imA) C1685 Fig. 9 , ) shorted together and the output terminals (transistor) shorted together. 2. The current transfer ratio
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C1684 r .85 transistor 100JjA optocouplers 4n35 25CC 4N35 4N36 C2Q79 C16B3 C1S94

C1685 transistor

Abstract: TRANSISTOR C1685 .3.0 V Peak forward current (1 ¡xs pulse, 300 pps) .3 A OUTPUT TRANSISTOR (each channel) Power , lâ'ž .001 10 fjA Vn=3.0 V Junction capacitance c, 50 PF VF=0 V OUTPUT TRANSISTOR (lF , CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITION SWITCHING TIMES, OUTPUT TRANSISTOR Non-saturated rise , -o OUTPUT IC 0 5 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching Time vs. IC C1296A Fig. 6. Switching
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ground relay MCT6 equivalent C1243

C1686

Abstract: C1685 transistor °C ambient.135 mW Derate linearly from 25°C.1.8 mW/°C OUTPUT TRANSISTOR Power , 65 pF VF=1 V, f=1 MHz Reverse leakage current IR .35 10 /xA VR=3.0 V OUTPUT TRANSISTOR Breakdown , ) 5 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching Time vs. IC Vce = 10V â'¢Rl > OUTPUT < C1296A
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MOC8111 MOC8112 MOC8113 SSs 02 c2079a IF20 TL431 equivalent

C1685 transistor

Abstract: transistor c1684 °C ambient.90 mW Derate linearly from 25°C.1.2 mW/°C OUTPUT TRANSISTOR Power , OUTPUT TRANSISTOR DC forward current gain hFE 100 420 Vce=5 V, lc=100 ¿¿A Breakdown voltage , . 10) 5 10 15 20 lo â'" (mA) C1685 Fig. 9. Switching Time vs. IC Ì Rbe 1 i-O OUTPUT < C1296A
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MCT271 KJh transistor free IC npn transistor phototransistor-type

C1685 transistor

Abstract: C1685 °C .1.1 mW/°C OUTPUT TRANSISTOR (each channel) Power dissipation at 25°C ambient.150 mW , capacitance c, 50 PF VF=0V; f=1MHz Reverse leakage current Ir 10 ÃA Vâ'ž=5.0V OUTPUT TRANSISTOR Breakdown , 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching Time vs. IC VCE =10V â'¢Rl (OUTPUT X IC C1296A
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optocoupler 5v to 24V 24LC24 JA3000
Abstract: .135 mW . . . . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25°C ambient . . 200 , OUTPUT TRANSISTOR Breakdown voltage Collector to emitter b v ceo 30 45 V lc= 1.0 mA, lF , . 1C C1296A C1685 Fig. 10. S w itchin g Time Test C ircuit Fig. 11. S w itchin g Time -
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M0C8113

Abstract: OC8112 . 3.0 A . 135 mW . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation @ 2 5 ° C , = 1 MHz VR- 3 . 0 V OUTPUT TRANSISTOR Breakdow n voltage C ollector to em itter Em itter to , n Q LU N 2 cr O < z Ic - '.mA.i C1685 Fig. 5. S w itching Time vs. IC Fig. 6. S w
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M0C8111 M0C8113 OC8112 m0c8112 OC811 I2-54 OC8113

transistor c1684

Abstract: C1685 R transistor PTOELECIRDNICS TRANSISTOR OUTPUT OPTOCOUPLER H11A1 PACKAGE DIMENSIONS DESCRIPTION The , .100 mW . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation @ 25°C . . , H OPTOELECTRONICS TRANSISTOR OUTPUT OPTOCOUPLER ELECTRO-OPTICAL CHARACTERISTICS (25 , , = 3 .0 V lF= 1 0 mA OUTPUT TRANSISTOR Breakdow n voltage C ollector to em itter C ollector to , 1-80 OPTOELECTUOHICS TRANSISTOR OUTPUT OPTOCOUPLER II ELECTRICAL CHARACTERISTIC CURVES fTA
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C1661
Abstract: 3 V . 3.0 A . 150 mW .2 mW/°C OUTPUT TRANSISTOR Power dissipation , d e static reverse current 10 1.2 mA 1.4 V lp=16 m A OUTPUT TRANSISTOR C , breakdow n voltage V(B )E R BO 7 V lE= 1 0 l>E 100 Transistor static forw ard , O R be z IC â'" (mA) C 1296A C1685 Fig. 10. S w itchin g Time Test C ircu it -
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C1685 transistor

Abstract: C1685 . 3.0 V Peak forward current (1 ÃS pulse, 300 pps).3 A OUTPUT TRANSISTOR (each channel) Power , 50 PF VF=0V OUTPUT TRANSISTOR (lF=0) Breakdown voltage, collector to emitter BVCE0 30 85 V lc , , OUTPUT TRANSISTOR Non-saturated rise time, fall time (Note 3) 2.4 lc=2 mA, VCE=10 V, rl=iooo , Rl = (See = 10V ioon Fig. 10) 0 5 10 15 20 Ic â'" (mA) C1685 Fig. 5. Switching
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Abstract: E O TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS H11A1 DESCRIPTION PACKAGE , OUTPUT TRANSISTOR Power dissipation @ 25°C . .150 mW 2.67 mW/°C Derate , 74L.L.& S1 DODfciObi à 71 1-79 S U I TRANSISTOR OUTPUT OPTOCOUPLER , O Forw ard voltage Forw ard vo ltag e tem perature c oefficient OUTPUT TRANSISTOR B reakdow , Vto = 5 0 0 VDC f= 1 MHz E l i TRANSISTOR OUTPUT OPTOCOUPLER OPTOELECTRONICS -
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ST1G03A DDDLD71
Abstract: OUTPUT TRANSISTOR (each channel) Power dissipation at 25°C a m b ie n t. . . . 150 mW Derate , =5.0V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter bvc o e 55 V lc=0.5 mA; lF= 0 , < 5 cc O z lc â'" (m A ) C1685 C 1296A Fig. 6. Switching Time Test Circuit Fig. 5 -
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ic1680

Abstract: optocoupler 24V . . . 1.1 mW/°C 1-177 OUTPUT TRANSISTOR (each channel) Power dissipation at 25°C a m b ie n t , 50 1.3 lr = 10 m A V F= 0 V ; f = 1 M H z V b= 5 .0 V OUTPUT TRANSISTOR B reakdow n voltage , 10V o z o O UTPUT X Û Ili N _i < 2 cc o 2 Ic -
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ic1680 optocoupler 24V RZ-5-C

C1685 transistor

Abstract: C1685 °C.1.8mW/°C OUTPUT TRANSISTOR Power dissipation at 25°C ambient. 200 mW Derate linearly from 25 , OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVceo 30 45 V lc=1.0 mA, lF=0 Collector to , = (See = 10V ioon Fig. 10) 0 5 10 15 20 lc â'" (mA) C1685 Fig. 9. Switching
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c168 TMT Isolator 100X1

C1685 transistor

Abstract: transistor c1684 .135 mW Derate linearly from 25°C. 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 , C1684 10 15 le â'" (mAì 20 C1685 Fig. 7 Normalized ton vs. Rbe Fig. 8 Normalized Switching Time vs
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C2090 Cl684 MCT-2201 H127 30TD12 Diode Equivalent rl 2z C1285 MCT2200/0Z MCT2201/1Z MCT2202/2Z MGT2202/2Z
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