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CC1000 Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO28, 4.40 MM, TSSOP-28 visit Texas Instruments
CC1000-RTR1 Texas Instruments Single Chip Ultra Low Power RF Transceiver for 315/433/868/915 MHz SRD Band 28-TSSOP -40 to 85 visit Texas Instruments
SN75FC1000PHD Texas Instruments 1-Gigabyte Per Second Fibre Channel Transceiver 64-HTQFP visit Texas Instruments
CC1000/T&R Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO28, 4.40 MM, TSSOP-28 visit Texas Instruments
SN75FC1000BPHD Texas Instruments SPECIALTY TELECOM CIRCUIT, PQFP64, THERMALLY ENHANCED, PLASTIC, QFP-64 visit Texas Instruments
CC1000_UCSP/T&R Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBGA28, LEAD FREE, BGA-28 visit Texas Instruments

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C1000 Datasheet

Part Manufacturer Description PDF Type
C1000 Crystek Crystals Surface Mount Clock Oscillators Scan
C1000 Crystek Crystals Surface Mount Clock Oscillators Scan
C1000 Ohmite Fixed and Adjustable Vitreous Enamel Power Resistors Scan
C1000A.18.02 General Cable Multiple Conductor Cables, Cables, Wires, 2C/22AWG 7/30TC UNSHIELD 500' Original
C1000A.41.10 General Cable Multiple Conductor Cables, Cables, Wires, 2C/22AWG 7/30TC UNSHIELD 1000' Original
C1000H-APS01 OMRON Controllers - Programmable Accessories, Industrial Controls, Meters, POWER SUPPLY BACKUP MODULE Original
C1000H-CE001 OMRON Controllers - Programmable Accessories, Industrial Controls, Meters, TERM BLOCK PLC F ADAPTER Original
C1000H-CN111 OMRON Controllers - Programmable Accessories, Industrial Controls, Meters, POWER SUPPLY CABLE 1 MODULE Original
C1000H-COV01 OMRON Controllers - Programmable Accessories, Industrial Controls, Meters, COVER FOR F ADAPTER Original
C1000H-TER01 OMRON Controllers - Programmable Accessories, Industrial Controls, Meters, SYSLINK TERMINATOR MODULE Original
C1000J1R53 Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 1.53 OHM 5% 1000W Original

C1000

Catalog Datasheet MFG & Type PDF Document Tags

C1000

Abstract: subckt 100 Frequency (M Hz) CAP ID=C 6 C=1000 pF PORT P=1 Z=75 Ohm -90 0 2 1 SRC ID=R5/C4 R=330 Ohm C=1000 pF RES ID=R7 R=6.8 Ohm R ES ID=R11 R=6.8 Ohm +5 V SUBCKT ID=S3 NET="AM1" CAP ID=C7 C=33 pF CAP ID=C8 C=1000 pF IND ID=L2 L=470 nH R ES ID=R8 R=6.8 Ohm 400 500 600 CAP ID=C12 C=1000 pF CAP ID=C13 C=1000 pF BALUN1 ID=XF2 SRC ID=R9/C10 R= 680 Ohm C= 1000 pF 1 SRC ID=R10/C11 R=680 Ohm C=1000 pF C AP ID=C 9 C=33 pF
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subckt IDR11 1-800-WJ1-4401

transistor C1000

Abstract: C1000 No. 134 B40 C1000 B80 C1000 B125 C1000 B250 C1000 B380 C1000 100 200 300 , - 00 C1000 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING
Fagor
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B40C1000 B380C1000 transistor C1000 B40C1000B B380 B250

C1000

Abstract: B80 rectifier No. 134 B40 C1000 B80 C1000 B125 C1000 B250 C1000 B380 C1000 VRWM Max. peak , element at VRWM 1V 10 µ A C1000 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC
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B80 rectifier C1000 B380 L 5 B B125 B250C1000

C1000

Abstract: B250 Bridge Rectifiers B40-B380/C1000 SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.0 Amperes 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed , CURVES ( B40-B380/C1000 ) FIG.1 - DERATING CURVE FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT B40 C1000 - B125 C1000 FOR OUTPUT RECTIFIED CURRENT B250 C1000 - B380 C1000 1.2 Resistive
EIC Semiconductor
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B80C1000 B125C1000 B250 Bridge Rectifiers B80-C1000 B40-B380/C1000 UL94V-O MIL-STD-202

marking code 731 sot-89

Abstract: AH11 Voltage Quiescent Current ID=C2 C=1000 pF size 0805 The diode D1 is used as over-voltage , , 3GPP, TM 1+64 DPCH) ID=C3 C=1000 pF size 0805 The diode D1 is used as over-voltage protection , Current C=100000 pF Gain / Return Loss 26 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) C=1000 pF 5.6 V 24 -5 22 -10 20 -15 18 The diode D1 is used as , IP3 L=180 nH NET="AH118" C=1000 pF C=1000 pF L=47 nH -20 +41 dBm 4.8 dB +5 V 160
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marking code 731 sot-89 AH11 AH118-89G AH118-89PCB1900 AH118-89PCB2140 AH118-89PCB900

NFI 1822

Abstract: Marking Code ES SOT-89 Quiescent Current ID=C2 C=1000 pF size 0805 The diode D1 is used as over-voltage protection on the , circuit layout. +40 dBm (+11 dBm / tone, 1 MHz spacing) ID=C1 C=100000 pF size 1206 Vcc = +5 , unless otherwise noted. wCDMA Channel Power (@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) ID=C3 C=1000 pF , Design Vcc = +5 V (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current C=100000 pF Gain / Return Loss 26 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) C=1000 pF
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NFI 1822 Marking Code ES SOT-89

AH212-EG

Abstract: AH212-S8G =47 pF 5 2 NET="AH212" 3 C=47 pF CAP ID=C4 C=1000 pF 1 CAP ID=C7 C=2.7 pF CAP , =4.6 Loss=0 F0=0 MHz PORT P=1 Z=50 Ohm CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 pF CAP ID=C9 C=47 pF RES ID=R2 R=0 Ohm CAP ID=C2 PORT C=47 pF P=1 Z=50 Ohm CAP ID=C10 C=1000 pF CAP ID=C6 C=1000 pF CAP ID=C5 C=1000 , C=1000 pF TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz PORT P=2 Z=50 Ohm
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AH212-EG AH212-S8G 2015 soic8 tuned amplifier AH212-S8

FH1G

Abstract: FH1-G 14 -20 13 25 30 35 Frequency (MHz) 40 45 -25 ID=C6 C=1000 pF ID=R7 R=390 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF 1 2 ID=L1 L=470 nH ID=C2 C=1000 pF ID=R8 L , -30 11 0.12 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22 -40 ID=C6 ID=R7 C=1000 pF R=240 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=R1 C=24 pF 1 2 ID=L1 L=220 nH ID=R2 R=4 Ohm ID=R8 L=82 nH ID=C2 C=1000 pF Notes: 1. Circuit Board Material: .014" Getek ML200DSS (r = 4.2), 1 oz
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FH1G FH1-G

FH1G

Abstract: -15 4.0 3.2 14 -20 13 25 30 35 Frequency (MHz) 40 45 -25 ID=C6 C=1000 pF ID=R7 R=390 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF 1 2 ID=L1 L=470 nH ID=C2 C=1000 , ID=R7 C=1000 pF R=240 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=R1 C=24 pF 1 2 ID=L1 L=220 nH ID=R2 R=4 Ohm ID=R8 L=82 nH ID=C2 C=1000 pF Notes: 1. Circuit Board Material: .014" Getek ML200DSS , =1.8e4 pF -25 0.22 0.24 0.26 Frequency (GHz) 0.28 0.3 +5V ID=C6 ID=R7 C=1000 pF R=2000 Ohm ID=R6 R
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JESD22-A114 JESD22-C101 J-STD-020

AH118

Abstract: AH118-89G Voltage Quiescent Current ID=C2 C=1000 pF size 0805 The diode D1 is used as over-voltage , thru line) in the final circuit layout. +40 dBm (+11 dBm / tone, 1 MHz spacing) ID=C1 C=100000 , 15 dB 16 dB +24.7 dBm wCDMA Channel Power (@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) ID=C3 C=1000 , V (+11 dBm / tone, Df=1 MHz) Noise Figure Supply Voltage Current C=100000 pF Gain / Return Loss 26 0 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) C=1000 pF 5.6 V
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ah1 RF amplifier AH118G

mmic MARKING CODE S1

Abstract: wj marking code A1 Reference Design: 170 MHz +4.5 V CAP ID=C2 C=1000 pF 20 PORT P=1 Z=50 Ohm CAP ID=C1 C=1000 , =220 nH CAP ID=C3 C=1000 pF PORT P=2 Z=50 Ohm Magnitude (dB) 10 0 DB(|S[1,1]|) DB , Product Information Reference Design: 450 MHz CAP ID=C2 C=1000 pF +4.5 V 20 PORT P=1 Z=50 Ohm CAP ID=C1 C=1000 pF IND ID=L1 L=15 nH IND ID=L2 L=82 nH SUBCKT ID=S1 NET="AG102" Magnitude (dB) 10 PORT P=2 Z=50 Ohm CAP ID=C3 C=1000 pF CAP ID=C4 C=1.2 pF
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J-STD-020A mmic MARKING CODE S1 wj marking code A1 mmic SOT-89 07 IDL1 MMIC "SOT 89" marking 12 MMIC "SOT 89" marking

FH1G

Abstract: FH1-G -13 -14 Gain / Return Loss 18 0 DB(|S(2,1)|) (L) ID=C6 C=1000 pF ID=R7 R=390 Ohm , (MHz) 40 45 ID=C3 C=1000 pF +5V ID=L1 L=470 nH NET="FH1" ID=C1 R=3.9 Ohm DB(|S , Voltage Supply Current 2 1 ID=C2 C=1000 pF ID=R8 L=390 nH Notes: 1. 8vpvÃ7hqÃHhrvhy)Ã , 0 DB(|S(2,1)|) (L) ID=C6 ID=R7 C=1000 pF R=240 Ohm NET="FH1" +5V DB(|S(2,2)|) (R , 0.22 ID=C3 C=1000 pF ID=L1 L=220 nH 2 ID=R1 C=24 pF 1 ID=R2 R=4 Ohm ID=C2 C=1000
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1R SOT89

Abstract: ID=C6 C=1000 pF ID=R6 R=390 Ohm NET="FH1" ID=C1 R=3.9 Ohm 35 16.8 -20 -16 +21 +39 3.4 , ) 40 45 ID=C3 C=1000 pF ID=L1 L=470 nH 2 ID=R1 C=68 pF 1 ID=C2 C=1000 pF ID=R8 , 2.7 -10 -30 11 -40 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22 ID=C3 C=1000 pF +5V ID=C6 ID=R7 C=1000 pF R=240 Ohm DB(|S(2,2)|) (R) 14 0.12 ID=R6 R=240 Ohm DB , " 2 ID=R1 C=24 pF 1 ID=R2 R=4 Ohm ID=C2 C=1000 pF ID=R8 L=82 nH Notes: 1
TriQuint Semiconductor
Original
1R SOT89 EF3CB9BD68693
Abstract: (|S(2,1)|) (L) ID=C6 C=1000 pF ID=R7 R=390 Ohm -5 16 -10 15 -15 14 -20 3.2 13 -25 30 35 Frequency (MHz) 40 45 ID=C3 C=1000 pF +5V ID=L1 L=470 nH , ) Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current 1 ID=C2 C=1000 pF , 0 DB(|S(2,1)|) (L) ID=C6 ID=R7 C=1000 pF R=240 Ohm FH101 NET="FH1" +5V DB(|S(2,2 , ) 0.2 0.22 ID=C3 C=1000 pF ID=L1 L=220 nH 2 ID=R1 C=24 pF 1 ID=R2 R=4 Ohm TriQuint Semiconductor
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FET FH1G

Abstract: Frequency (MHz) 40 45 -25 ID=C6 C=1000 pF ID=R7 R=390 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF 1 2 ID=L1 L=470 nH ID=C2 C=1000 pF ID=R8 L=390 nH Notes: 1 , 2.7 12 -30 11 0.12 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22 -40 ID=C6 ID=R7 C=1000 pF R=240 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=R1 C=24 pF 1 2 ID=L1 L=220 nH ID=R2 R=4 Ohm ID=R8 L=82 nH ID=C2 C=1000 pF Notes: 1. Circuit Board Material: .014" Getek ML200DSS (r = 4.2), 1 oz
TriQuint Semiconductor
Original
FET FH1G

FH1G

Abstract: DB(|S(1,1)|) (R) 2 1 ID=C2 C=1000 pF ID=R8 L=390 nH 0 DB(|S(2,2)|) (R) 16 -10 15 -15 J3 -5 J4 S11, S22 (dB) 17 Gain (dB) ID=C3 C=1000 pF ID=L1 L , +39 3.4 ID=R7 R=390 Ohm R2 C6 C2 R7 30 16.6 19 21 ID=C6 C=1000 pF ID=R6 R , Frequency (GHz) 0.2 0.22 J4 0Ω jumper 0Ω jumper C3 U1 -30 0.12 ID=C2 C=1000 , R1 C1 L1 2.7 170 14.2 33 23 +21.6 +42 2.7 ID=C3 C=1000 pF +5V ID=C6
TriQuint Semiconductor
Original

B250 Bridge Rectifiers

Abstract: B80 c1500 rectifier Ratings, according to IEC publication No. 134 B40 C1000 B80 C1000 B12S C1000 B250 C1000 B380 C1000 , HVR062 (7) = Suffix El 70 X 105 X 205 (6) 250 (7) 200 0 710kg (1 560Lbs) (8) B C800, C1000, C1500R.WL F
-
OCR Scan
B80 c1500 rectifier 34553 fagor B250 fagor b40 B80 c1500 bridge rectifier fagor B 80 bridge rectifier 345R325 00D0BD1 UL1449 15L-25L DO-41 DO-15

B250 Bridge Rectifiers

Abstract: transistor C1000 B40-B380/C1000 SILICON BRIDGE RECTIFIERS WOB PRV : 100 - 900 Volts Io : 1.0 Amperes 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : High case dielectric strength High surge , RATING AND CHARACTERISTIC CURVES ( B40-B380/C1000 ) FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT B250 C1000 - B380 C1000 1.2 Resistive or Inductive load. 1.0 Capacitive Load 0.8 0-10µF , DERATING CURVE FOR OUTPUT RECTIFIED CURRENT B40 C1000 - B125 C1000 1.2 Resistive or Inductive load
EIC Semiconductor
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b40 bridge b40 bridge rectifier BRIDGE B380 B250 bridge diode

B4035

Abstract: ) 40 45 -25 ID=C6 C=1000 pF ID=R7 R=390 Ohm +5V ID=C3 C=1000 pF FH101 NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF 1 2 ID=L1 L=470 nH ID=C2 C=1000 pF ID=R8 L=390 nH Notes: 1. Circuit Board , 0.16 0.18 Frequency (GHz) 0.2 0.22 -40 ID=C6 ID=R7 C=1000 pF R=240 Ohm +5V ID=C3 C=1000 pF FH101 NET="FH1" ID=R1 C=24 pF 1 2 ID=L1 L=220 nH ID=R2 R=4 Ohm ID=R8 L=82 nH ID=C2 C=1000 pF , Frequency (GHz) 0.28 0.3 +5V ID=C6 ID=R7 C=1000 pF R=2000 Ohm ID=R6 R=2000 Ohm FH101 NET="FH1" 2
TriQuint Semiconductor
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B4035
Abstract: 4.0 3.2 14 -20 13 25 30 35 Frequency (MHz) 40 45 -25 ID=C6 C=1000 pF ID=R7 R=390 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF 1 2 ID=L1 L=470 nH ID=C2 C=1000 pF ID=R8 L=390 nH Notes: ¨© © ! "$#% & © ' (!) 021 354$6$& & 78#@9BA!050 CEDDGF r , Frequency (GHz) 0.2 0.22 -40 ID=C6 ID=R7 C=1000 pF R=240 Ohm +5V ID=C3 C=1000 pF NET="FH1" ID=R1 C=24 pF 1 2 ID=L1 L=220 nH ID=R2 R=4 Ohm ID=R8 L=82 nH ID=C2 C=1000 pF Notes: ) 1 WJ Communications
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Panasonic HFS Series Capacitor

Abstract: Capacitor 330 VFK s TB 125°C/500 ~1000 h 8 ~ 10 ( P.049 ) / 105°C 5000 h 12.5 ~ 18 ( P.043 ) TA 125°C1000 h 8 ~ 10 ( P.047 ) FC ( ) 105°C 5000 h 160 ~ 450 W. V. 10 ~ 18 (P .053 ) EB ( ) s +125 °C 2000h (P .109 ) 105°C/ 2000 h 5.8mm 4 ~ 10 ( P.037 ) HB 105°C/1000 h 5.5mm 4 ~ 10 ( P.045) FE 105°C/1000 h 5.5mm 4 ~ 10 (P .040) FC HA 105°C/1000 h 5.4mm 4 ~ 10 ( P.034 ) 85°C/ 2000 h 5.4mm 3 ~ 10 ( P.029 ) S MC
Panasonic
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Panasonic HFS Series Capacitor Capacitor 330 VFK capacitor 220 vfk Capacitor 47 VFK Capacitor 100 VFK Panasonic hfs Capacitor

EE119

Abstract: aluminum electrolytic snap in panasonic 100 Frequency (M Hz) CAP ID=C 6 C=1000 pF PORT P=1 Z=75 Ohm -90 0 2 1 SRC ID=R5/C4 R=330 Ohm C=1000 pF RES ID=R7 R=6.8 Ohm R ES ID=R11 R=6.8 Ohm +5 V SUBCKT ID=S3 NET="AM1" CAP ID=C7 C=33 pF CAP ID=C8 C=1000 pF IND ID=L2 L=470 nH R ES ID=R8 R=6.8 Ohm 400 500 600 CAP ID=C12 C=1000 pF CAP ID=C13 C=1000 pF BALUN1 ID=XF2 SRC ID=R9/C10 R= 680 Ohm C= 1000 pF 1 SRC ID=R10/C11 R=680 Ohm C=1000 pF C AP ID=C 9 C=33 pF
Panasonic
Original
VDE-806 EE119 aluminum electrolytic snap in panasonic panasonic capacitors series ka Electric Double Layer Capacitors, Radial Lead Type EE28 EE-162 EE169 EE147 EE162 EE167 EE205
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