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C/D01 Datasheet

Part Manufacturer Description PDF Type
CD010x-VA0330-x Hua Jung Components Leaded Inductor Original
CD0140 N/A Shortform Data and Cross References (Misc Datasheets) Scan
CD0140 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
CD0140 N/A Cross Reference Datasheet Scan
CD01CFW Teledyne Relays SSR, DC Input Type, 2A Max Output Current, 1000V I/O Isolation Original
CD01CFY Teledyne Relays SSR, DC Input Type, 2A Max Output Current, 1000V I/O Isolation Original

C/D01

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: soldering processes. 100% matte tin (Sn) plating. DS9711A/B/C/D-01 July 2007 www.richtek.com 1 , DS9711A/B/C/D-01 July 2007 RT9711A/B/C/D Absolute Maximum Ratings (Note 1) Supply Voltage , Current Ramp (< 0.1A/ms) on VOUT μA A To be continued DS9711A/B/C/D-01 July 2007 , DS9711A/B/C/D-01 July 2007 RT9711A/B/C/D Typical Operating Characteristics Switch On Resistance vs , 60 Temperature (°C) DS9711A/B/C/D-01 July 2007 1 80 100 120 RT9711A/B, VIN = RichTek Technology
Original
RT9711A/B/C/D RT9711 TSOT-23-5 RT9711C/D DS9711A/B/C/D-01

slide potentiometer

Abstract: 8B13 0 1.8 k±0.2 C Ð0.1 0 4.0 ± 1.20 0.05 L ± 5.00 0.15 0.5 6.0 6.0 Part No. ± 1.20 0.06 ± 0.3 ± 5.00 0.15 Ð0.1 L Ð0.15 k±0.2 0 0 2.00 ± 0.3 C Ð0.1 0.5 4.0 Part No. Length Length 7th to 9th X L l , ± 1.0 (1.6) 1.0 C 0.6 0 4.0 Ð0.1 Length Part No. Length 7th to 9th , 10.0 15.0 20.0 7.0 8.0 8.0 0 5.00 S 0 Ð0.07 2.0 Ð0.1 1.0 1.20 0.06
Panasonic
Original
slide potentiometer 8B13 EWANA C20 diode, TO
Abstract: =20~80kH z IouT=30mA V i\=H -»L Tj=-20~+85°C V out=H- L - H V out=3.9V C d=0.1|jF C d=0.1|jF VOL , pin. tPLH = 100000 · C tPLH: transmission delay time [S] C: capacitor value [F] 4 (S O P -7) 3 ( S , Ratings Unit T opr T stg Vcc IoUT Pd -20-1-85 ^0~+125 -0.3-+18 200 650& °C "C V mA mW , Unit T op I op V op -20 -1-85 0 -1 5 0 2 -1 6 °C mA V (Except where noted otherwise, T a=25°C , easurem ent conditions Min. Typ. Max. Unit Ic c q l Iccq 2 V out ViO V in = 6V IouT -
OCR Scan
MM1437

d12s60

Abstract: SDT12S60 forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t , tp/T 44 parameter: Tj , tp = 350 µs 24 W A 150°C 125°C 100°C 25°C -40°C d=0.1 d=0.2 36 d , Q67040-S4470 Marking D12S60 Pin 1 C Pin 2 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp
Infineon Technologies
Original
SDT12S60 PG-TO220-2-2

nrz winchester

Abstract: CONFIGURATION CLK 1 C 3 20 Vcc : 19 EN ] 18 NRZ NC 2 E BCLR TEST 3 C 4 d 1 17 ST D 16 DOUT 3 15 BDONE b 14 SHFCLK 3 13 D07 3 12 D06 3 11 D05 D00 5 C D01 6 C D02 7 C D03 8 [ D04 9 C Vss 10 C GENERAL , parallel) while serial data is being shifted into the other. D00 D01 D02 D03 D04 D05 D06 D07 For
-
OCR Scan
nrz winchester HDC1100-01
Abstract: forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t , tp/T 44 parameter: Tj , tp = 350 µs 24 W A 150°C 125°C 100°C 25°C -40°C d=0.1 d=0.2 36 d , Q67040-S4470 Marking D12S60 Pin 1 C Pin 2 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp Infineon Technologies
Original

d12s60

Abstract: diode schottky 600v infineon , D=0.1 Non repetitive peak forward current tp =10µs, TC=25°C i 2 t value, TC=25°C, tp =10ms , 150°C 125°C 100°C 25°C -40°C d=0.1 d=0.2 36 d=0.5 d=1 32 28 24 12 20 16 8 12 , Ordering Code Marking Pin 1 Pin 2 SDT12S60 P-TO220-2-2. Q67040-S4470 D12S60 C Pin 3 A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF 12 RMS forward current, f=50Hz I FRMS 17 Surge non
Infineon Technologies
Original
diode schottky 600v infineon

ma615

Abstract: 14 A i2 A 11 V ee A 10 Ag C 4 5 6 7 8 9 10 11 12 13 14 Doo C D01 c 24 Z I A 13 V cc c D 02 [ I Do 3 C Ao C 22 21 20 19 ORDERING INFORMATION T yp o N n. H M I0 0 5 0 4 F -1 0 H M 1 0 0 5 0 4 F -1 2 Access Tim e 10 ns 12 ns Package 28 p in C era m ic Flat Package (.TO m , HM100504F-10/12 - DESCRIPTION Preliminary PIN ARRANGEMENT Dio ( D 11 c 65536-Words x , 0 H IT A C H I Hitachi America. Ltd · Hitachi Plaza · 2000 Sierra Point Pkwy. · Brisbane, CA
-
OCR Scan
ma615 65536-W HM100504
Abstract: t 0.35 D.C. D=0.8 0.2 Io 0A 0V VR D=t/T VR=200V Tj=150ï'°C D=0.1 0 0 , ) Construction Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25ï'°C , 200 Direct voltage Average rectified forward current Io/2 Glass epoxy substrate mounted Ta=25ï'°C 60Hz half sin wave,resistive load Tc=130ï'°C Forward current surge peak IFSM 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25ï'°C Junction temperature Storage temperature ROHM
Original
RF04UA2D R1120A

D04S60

Abstract: to220 pcb footprint peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C , . C A SDD04S60 P-TO252-3 Q67040-S4368 D04S60 n.c. A C SDT04S60 PG-TO220-2-2. Q67040-S4445 D04S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 4 Unit A 5.6 12.5 TC=25°C, tp
Infineon Technologies
Original
SDP04S60 P-TO252 Q67040-S4369 to220 pcb footprint smd schottky diode marking 321 Schottky diode TO220 diode schottky 600v D04S60C TO252-3 material case P-TO220 P-TO220-3 P-TO220-3-1
Abstract: 1 A2 Q Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ ^J AoC A sC A4 C csQ D¡oC D0 0 C VccC Vee C D01 [I Dm H 12 w e Q 13 A5 C 14 A e ll 15 A t C 16 Aà Q 17 A9 Q 18 36 35 , Circuit DooDn t t RAV C ircuit R /W Circuit D01 De Dq2 Do Dq3 Function Table Input , HDi3 I] D o3 â¡ Vee IjV c c I |D o2 HD¡2 J nc I] A i 4 22 I]A13 21 Z]A i 2 20 H , ) Read Out Noninvert Absolute Maximum Rating (Tj = 125°C max) Item Symbol Rating Unit -
OCR Scan
HM101524 HM101524JP-15 HM101524JP-18 HM101524TT-15 HM101524TT-18 TTP-36DA

d02s60

Abstract: forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ³i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t , , d = tp/T 7 A 150°C 100°C 25°C W 3 IF 2.5 PF(AV) 5 d=0.1 d=0.2 d=0.5 d=1 4 , Code Q67040-S4511 Marking D02S60 Pin 1 C Pin 2 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp
Infineon Technologies
Original
SDT02S60

d06s60

Abstract: D06S60C °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward , ) 10 150°C 125°C 100°C 25°C -40°C IF 8 7 d=0.1 d=0.2 d=0.5 d=1 20 18 16 6 , -3 Ordering Code Q67040-S4371 Marking Pin 1 Pin 2 Pin 3 D06S60 n.c. C A SDT06S60 PG-TO220-2-2. Q67040-S4446 D06S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C IF RMS forward current, f
Infineon Technologies
Original
SDP06S60 D06S60C T-1228 600 V power Schottky silicon carbide diode P-TO220-3-21 PG-TO-220-2-2

D10S30

Abstract: Q67040-S4372 , Tstg -55. +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non , =0.2 d=0.1 16 -40°C 25°C 100°C 125°C 150°C 8 6 12 8 4 4 2 0 0.6 Rev. 1.5 , Marking Pin 1 Pin 2 Pin 3 SDP10S30 P-TO220-3 Q67040-S4372 D10S30 n.c. C A SDT10S30 PG-TO220-2-2. Q67040-S4447 D10S30 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Value Continuous forward current, TC=100°C IF 10 RMS
Infineon Technologies
Original

d02s60

Abstract: d02s60c peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C , -2-2. Q67040-S4511 D02S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 2 Unit A 2.8 4.1 TC=25°C, tp=10ms IFRM 7.3 IFMAX 17 i 2t value, TC=25°C, tp=10ms i2dt 0.08 A²s Repetitive peak reverse
Infineon Technologies
Original
d02s60c
Abstract: SUFFIX PLASTIC PACKAGE CASE 648 FN SUFFIX PLCC CASE 775 DIP PIN A S S IG N M E N T Q0 C Q1 C D11 C D 10 C D01 C 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 V CC 02 Q3 D20 D21 D30 D31 DOO C NC C VEE C 9 Z ] Select Pin assignment is for Dual-in-line Package. For PLCC pin , enables data inputs D00, D10, D20, and D30 and a low (L) level enables data inputs D01, D11, D21, and D31 , L U E S @ Test T em perature -3 0 °C + 25°C + 85°C Ptn Under C haracteristic Power Supply Drain C -
OCR Scan
MC10158
Abstract: D012 D013 D 014 Z C Z C C C C C C C C C C C C C C D01 s 0016 VSS A1S UB A7 A6 A9 AIO A ll , ^EDI EDI8F1664CA Commercial High Speed Megabit SRAM Module E le c tr o n ic D s i i g n i in c . · 64Kx16 Static RAM CMOS, Module The EDI8F1664CA is a high speed 64Kx16 CMOS Static RAM , DQ11 DQ10 D 09 DOS VSS* DQ7 DQ6 DQ5 DQ4 D 03 D 02 D Ol DO0 Z 1 C 2C 3 Z 4 C 5 C 6 C 7 C ac 9 C 10 C 11 C 12 C 13 Z 14 C 15 C 16 C 17 [ 18 C 19 E 20 E 3 3 3 a 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 40 39 3« 37 -
OCR Scan
DQ8DQ15 A0-A15 DQ0-DQ15

d12s60

Abstract: SDT12S60 forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev , , tp = 350 µs 180 PF(AV)=f(IF) TC=100°C, d = tp/T 24 44 W d=0.1 d=0.2 36 d=0.5 d , C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF 12 RMS forward current, f=50Hz IFRMS 17 Surge non repetitive forward current, sine halfwave IFSM Value Unit A 36 TC=25°C, tp=10ms IFRM 49
Infineon Technologies
Original
diode schottky code 03 US180
Abstract: 16 15 VCC Q2 Q3 020 D21 D30 D31 Se le c t 14 13 12 11 D10 C D01 C DOO C NC vee , M OTOROLA MC10158 QUAD 2-INPUT MULTIPLEXER (NON-INVERTING) The M C I 0158 is a quad two , enables data inputs DOO, D10, D20, and D30 and a low (L) level enables data inputs D01, D11, 021, and D31 , to Q) 3.2 ns typ (Select to Q) tr, tf = 2.5 ns typ (20% -80% ) L S U F F IX C E R A M IC PA C K A G E C A S E 620 LOGIC DIAGRAM P S U F F IX P L A S T IC PA C K A G E C A S E 648 F N S U -
OCR Scan

D05S60

Abstract: schottky 400v forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev , 100°C 25°C -40°C 20 18 PF(AV) A IF 24 W 6 d=1 d=0.5 d=0.2 d=0.1 16 , C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 5 Unit A 7.1 18.5 TC=25°C, tp=10ms IFRM 21
Infineon Technologies
Original
SDT05S60 D05S60 Q67040S4644 schottky 400v
Abstract: STANDARD MICROSYSTEMS CORPORATION HDC1100-01 PRELIMINARY Hard Disk Serial to Parallel Converter FEATURES Single + 5 Volt Power Supply Double Buffered Byte Strobe Outputs 5 MBit Shift Rate Serial Input/Parallel Out 20 Pin DIP n-Channel COPLAMOS®Silicon Gate Technology PIN CONFIGURATION CLK 1 C 3 20 Vcc : 19 EN ] 18 NRZ NC 2 E BCLR TEST 3 C 4 d 1 17 ST D 16 DOUT 3 15 BDONE b 14 SHFCLK 3 13 D07 3 12 D06 3 11 D05 D00 5 C D01 6 C D02 7 C D03 8 [ D04 9 C Vss 10 C GENERAL -
OCR Scan
PL3155 PL153 CJ150 J150FL CJ3150 PL155FL

mp 1038

Abstract: BJ120 14 A i2 A 11 V ee A 10 Ag C 4 5 6 7 8 9 10 11 12 13 14 Doo C D01 c 24 Z I A 13 V cc c
-
OCR Scan
BJ120 mp 1038 cp2 2213 bjsl CJ150FL UBJ26 UBJ23 UCJ20 UCJ40 UPL20

82C55A

Abstract: IN82C55AN D012 D013 D 014 Z C Z C C C C C C C C C C C C C C D01 s 0016 VSS A1S UB A7 A6 A9 AIO A ll
INTEGRAL
Original
IN82C55AN 82C55A
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