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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Bt 35 F transistor

Catalog Datasheet MFG & Type PDF Document Tags

MAX715CWG

Abstract: MAX714 C27 %F PG AG Vcc BT LBO E6 ON U6 S1 RS B1 S6 S2 B6N B2 B6 Typical Operating Circuits , 0V, BT = 3V, MAX71_E/M_ _ 7 20 Supply Current in Standby State (ON = 0V) VCC = 11V, BT = 3V 35 55 , off, the base-drive output rises to Vcc (or BT whichever is higher), turning off the pass transistor , [T 16] AG Vcc \J_ ÌH BT LBO [T A1XXIAI Ã4| E6 ON [T MAX714 13] U6 SI [5 ÃD RS B1 [6 , ™¦ Four Logic-Controlled +5V Regulators ♦ Three Switching Regulators ♦ 35|xA Quiescent Current
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MAX714/715/716 MAX715 MAX716EWI MAX716EVKIT MAX715CWG Bt 35 transistor motorola transistor 2N2907A Bt 35 F transistor HX749 MAX716 MAXC001 MAX716CPI MAX716CWI

2N2222A zetex

Abstract: MAX715CNG = 11V, BT = 3V 35 55 HA Supply Current in Operating State (ON = V1) VCC = 11V, BT = 3V, V1 and V2 , off, the base-drive output rises to Vcc (or BT whichever is higher), turning off the pass transistor , [T ÃH AG Vcc \J_ T^ BT LBO [T 14] E6 ON [T MAX714 í§ U6 S1 [][ 12] RS B1 [e_ ïà , Four Logic-Controlled +5V Regulators ♦ Three Switching Regulators ♦ 35|iA Quiescent Current in , K 1 ABSOLUTE MAXIMUM RATINGS Input Supply Voltages Vcc, BT . -0.3V
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2N2222A zetex MAX715CNG motorola b6n MAX714CPE MAX714CWE 7070-29 Caddell-Burns MAX716C/D MAX716EP MAX716MJI

2TX749

Abstract: 2N2222A zetex Configurations (continued) -V 3 7 · 2 8 , E7 2 7 ] E6 2 ? g E5 U6 TOP VIEW ; BT f 1 .AG b t [T , perating C ircuits PG [ 7 VCC 1 6 ] AG 1 5 ] BT \2_ A 1 /X IA 1 MAX714 lbo|T o n 1 4 ] E6 , Supply Systems MAX 714/715/716 ABSOLUTE MAXIMUM RATINGS Input Supply Voltages Vcc, BT . -0.3V to +12V S1-S7, B1-B7, ON, E3-E7, U 6 -0.3V to the higher of Vcc+0,3V or BT+0.3 LBO, R S , functional operation o f the device at these or any other conditions beyond those indicated in the
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2TX749 E4QN 10P05L AX714/715/716 MAX/16 MAX716EPI

TA7920

Abstract: equivalent of SL 100 NPN Transistor VOLTAGE. . . VEB0 3.5 * CONTINUOUS COLLECTOR CURRENT. Ic 5 * TRANSISTOR DISSIPATION , -to-88-MHz Emitter-Ballasted Silicon N-P-N Overlay Transistor For 12.5-V Amplifiers in VHF Communications Equipment Features , planar transistor featuring overlay emitter eletrode construction. This device utilizes many separate , . The transistor is completely tested for load-mismatch capability at 66 MHz with an infinity-to-one , (br| ebo 10 0 3.5 - V Thermal Resistance: (Junction-to-Case) 0J-C - 3.5 °C/W a Pulsed
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2N5992 TA7920 equivalent of SL 100 NPN Transistor 7w RF POWER TRANSISTOR NPN BT 812 RCA Power Transistor 4 225

zener DIODE 5c2

Abstract: zener 5c2 FUJI stmerGsoe 7MBP 150RA-060 IG BT IPM 600V 6x150A+DB Intelligent Power Module ( R-Series , Collector 1ms Icp 300 A Current Duty=58.8% -lc 150 Collector Power Dissipation one transistor Pe 595 , 50 Collector Power Dissi. DB One Transistor Pc 198 W Voltage of Power Supply for Driver Voc *1 , Screw Torque Mounting *1 3.5 Nm Terminals *1 3.5 n Outline Drawing " fili Iii, »1 I©â , =300V 0.4 M BE3Ã"7T2 GDDSbflS 1E4 H SSâ"¢ 7MBP 150RA-060 IG BT IPM 600V 6x150A+DB â'¢ Thermal
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7MBP150RA-060 zener DIODE 5c2 zener 5c2 5c2 zener diode zener DIODE 5c2 5t fuji ipm 5c2 zener

ECONOPACK mounting instructions

Abstract: BT diode cono2 S ix p a c k DIODE 1 IG BT RTHJC K/W 0.6 r T r T BSM 35 E co n o 2 S ix p a c k BSM 50 E cono2 , DIODE BSM 25 H a lf b r id g e l DIODE BSM 35 H a lf b rid g e l DIODE 0.8 IG BT 1 0.44 IG BT 0.18 0.6 , SIEMENS 1 Übersicht IGBT-Module 1 Technische Angaben Technical Information O verview IG BT , Transistor modules Product Range IGBT modules in the voltage range 600 V, 1200 V and 1700 V and in the , Information IGBT Transistors Im wesentlichen ist der IGBT-Transistor ein m odifizierter MOS- Transistor
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ECONOPACK mounting instructions BT diode bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber

TA7921

Abstract: 150 watt hf transistor 12 volt -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Type for 12.5-Volt Applications in VHF Communications Equipment , emitter.V(BR)CES ^ ^ With base open.vCEO 18 v â'¢EMITTER-TO-BASE VOLTAGE.VEB0 3.5 V â'¢ COLLECTOR CURRENT: Continuous.Ic 5.0 A * TRANSISTOR DISSIPATION: PT At case temperatures up , epitaxial silicon n-p-n planar transistor featuring overlay emitter electrode construction. This device , for stabilization. The transistor is completely tested for load mismatch capability at 66 MHz with a
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2N5993 TA7921 150 watt hf transistor 12 volt rca 632 452 transistor rca transistor 88-MH 2N59933 92CS-17371 V63RJ

Bt 35 F transistor

Abstract: Bt 35 transistor 2.0 (IC = 100 ¿tAdc, V c e = 5.0 Vdc, R s = 3 . 0 k n , f = 1.0 kHz) M M BT 5086 M M BT 5087 , M O T O R O L A SC Í X S T R S / R FD6367254 ' -V * . DE^t.3L,72S4 0 D Ô E D 4 7 3 | ~ i F , TRANSISTOR P N P SILICON ·FR-5 = 1 .0 x 0 .7 5 x 0 .6 2 in. · ' A lu m in a - 0.4 x 0.3 x 0.024 in. 99.5 , ) (V c b = 35 V dc, Ie * 0) O N CH A R A C TE R ISTIC S DC C urrent G ain (IC = 100 /iA d c, V c e = 5.0 Vdc) hFE M M BT 50 86 M M BT 50 87 M M BT 50 86 M M BT 5087 M M BT 5086 M M BT 5087 VCE(sat) v BE
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MMBT5086 MMBT5087

50 5G

Abstract: ghz detector 802.11b CCK/ DSSS Gaussian Filtering at 1 Mbps · 32 dB of Linear Power Gain at 2.4 GHz · 35 dB of , GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias , inside the 5 GHz PA. 9 VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 , 20 GND 21 VCC3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz
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AWL9924 50 5G ghz detector s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ AWL9924RS34P8

NQ83C95

Abstract: 83C95 ­.25) 0.5 BT t ­50 mV 4.0 BT 585 mV sin(2 * 0.6 BT t * (t/1BT ­.35) 0.85 BT , output/AutoDUPLEX enable input. This pin consists of an open drain output transistor with a resistor , drain output transistor with a resistor pullup. To disable the link test function, tie the pin to GND , and STP mode input. This pin consists of an open drain output transistor with a resistor pullup. To , Autopolarity Disable input. This pin consists of an open drain output transistor with a resistor pullup. To
Seeq Technology
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83C95 10BASET NQ83C95 Xfmr200 seeq 8023 A553-1084-01 10BASE-T MD400139/E

AWL9924

Abstract: AWL9924RS34P0 Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of
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AWL9924RS34Q1 AWL9924RS34P0 AWL9924RS34P6 EVA9924RS34
Abstract: Filtering at 1 Mbps 32 dB of Linear Power Gain at 2.4 GHz 35 dB of Linear Power Gain at 5 GHz Single +3.3 V , power transistor of stage 1 of the 5 GHz PA. 5 GHz Bias Circuit Voltage. Supply voltage and current is , for power transistor of stage 2 of the 5 GHz PA. 5 GHz Supply Voltage. Bias for power transistor of , transistor of stage 3 of the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 2 of the 2 , to the bias circuits inside the 2 GHz PA. 2 GHz Supply Voltage. Bias for power transistor of stage 1 Anadigics
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Abstract: is send to line when voltage of this pin is over 1.4 V. 10 BT Backtone Input The signal , over 1.4 V. 10 Input 11 BT Backtone Input The signal entered to this pin is send to , Current Detection Current proportional to line current through this pin. So, power dissipation o f , entered to this pin is send to line when voltage of this pin is over 1.4 V. 12 BT Backtone Input The signal entered to this pin is send to receiver when voltage o f this pin is over 1.4 V. 13 -
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HA16822P/HA16822MP/H A16822F HA16822 HA16822MP MP-18 HA16822F
Abstract: entered to this pin is send to line when voltage of this pin is over 1.4 V. 10 BT Backtone Input , over 1.4 V. 10 Input 11 BT Backtone Input The signal entered to this pin is send to , pin (Q), sending, receiver gain and sending gain o f DTMF/HOLD are automatically adjusted to forward , pin is input o f receiver pre-amplifier. Adjust balancing network Za to restrain from sidetone. 5 , is send to line when voltage of this pin is over 1.4 V. 11 BT Backtone Input The signal -
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6822P/HA1 6822MP/H 6822F HA16822P DP-16 FP-18D

6MBP15RH060

Abstract: 6MBP30RH060 of FWD Vf -lc=15A - - 3.5 V 6MBP15RH060 IG BT Modules i Electrical characteristics of control , . 600V/30 A. 6MBP15RH060 IG BT Modules IGBT-IPM R series 600V /15A / 6 in one-package â  Features â , transistor PC 40 W Junction temperature T) 150 'C Input voltage of power supply for pre-driver Vcc -0.3 , time (IGBT) See Fig. 3 ton lc=15A, Vdc=300V Inductive-Load 0.5 - - us toff - - 3.5 us Switching , N â'¢ m 6MBP15RH060 IG BT Modules Block diagram Pre-driver 1 includes following functions
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6MBP20RH060 6MBP30RH060 IGBT THEORY AND APPLICATIONS DC Motor control IGBT FUJI ELECTRIC ipm fuji transistor modules 1251C 50/60H 1999-10H10FIS

AWL9924

Abstract: AWL9924RS34P0 Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA
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802.11b TI

AWL9924

Abstract: AWL9924RS34P0 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 V C C 2 2G 2
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Abstract: 2.4 GHz â'¢ 35 dB of Linear Power Gain at 5 GHz â'¢ Single +3.3 V Supply â'¢ Dual , power transistor of stage 1 of the 5 GHz PA. 8 VBC 5G 5 GHz Bias Circuit Voltage. Supply , VCC2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 VCC3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22 VCC2 2G 2 Anadigics
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AWL9924RS34P0

Abstract: AWL9924RS34P6 Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz Bias Circuit Voltage. Supply voltage and , 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage 3 of the 5 GHz PA. 11 GND Ground , 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of the 2 GHz PA. 22
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AWL9924

Abstract: AWL9924RS34P0 Gain at 2.4 GHz · 35 dB of Linear Power Gain at 5 GHz · Single +3.3 V Supply · Dual , GHz Supply Voltage. Bias for power transistor of stage 1 of the 5 GHz PA. 8 V B C 5G 5 GHz , circuits inside the 5 GHz PA. 9 V C C 2 5G 5 GHz Supply Voltage. Bias for power transistor of stage 2 of the 5 GHz PA. 10 V C C 3 5G 5 GHz Supply Voltage. Bias for power transistor of stage , DESCRIPTION 20 GND 21 V C C 3 2G 2 GHz Supply Voltage. Bias for power transistor of stage 3 of
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EVA9924RS34P9
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