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Part Manufacturer Description Datasheet BUY
PMP6710 Texas Instruments 85VAC-265VAC Input, 12V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
PMP6788 Texas Instruments 85VAC-265VAC Input, 15V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
LM95245CIMMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-VSSOP -40 to 125 visit Texas Instruments
LM95245CIMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC visit Texas Instruments
LM95245CIM Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC visit Texas Instruments
LM96163CISDX/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments

Bjt 547

Catalog Datasheet MFG & Type PDF Document Tags

Bjt 547

Abstract: 2N585 2N585 Ge NPN Lo-Pwr BJT 4.70 Transistors Transistors Bipolar Ge NP. Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N585 2N585 G e NPN Lo - Pw r BJ T Enter code INTER3 at checkout.* CUSTOMER , Warehouse Over 35+ Million Items Products Search for Parts Request a Quote In Stock 547 Brand New , /12/2010 11:58 PM 2N585 Ge NPN Lo-Pwr BJT 4.70 Transistors Transistors Bipolar Ge NP. http
American Microsemiconductor
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Bjt 547 OF BJT 547

Bjt 547

Abstract: OF BJT 547 Extraction Methods: BJT Example Lab: BJT parameter extraction For the latest information on class , Ireland 1890 924 204 Israel 972-3-9288-504/544 Italy 39 02 92 60 8484 Netherlands 31 (0) 20 547
Agilent Technologies
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Curtice advanced design system DATASHEET OF BJT 547 N3231A N3231B 5988-2995EN

BJT BF 331

Abstract: mje 1303 -54.7 -63.8 -71.6 -79.9 0.03 0.17 0.37 0.46 0.68 0.90 1.08 1.19 MAG1 (dB) 23.1 17.0 , .230 75.1 64.8 57.3 56.6 56.1 54.7 54.2 51.9 163.4 126.7 99.9 91.0 84.7 79.3 74.1 , 57.0 54.0 50.2 46.0 .970 .773 .647 .616 .592 .574 .575 .572 .576 .555 .551 .547 .520 , CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 , SERIES NE68019 NONLINEAR MODEL SCHEMATIC Collector Base Emitter BJT NONLINEAR MODEL
California Eastern Laboratories
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NE680 NE681 NE68018 BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 915 transistor 355 mje 1102

Bjt 547

Abstract: OF BJT 547 GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum , MHz/V 100% Production Tested 100% Production Tested 1050MHz 54.7 72.9 91.1 MHz/V
RF Micro Devices
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VCO-121 stc 407 A114 JESD22 VCO-121S/STC VCO121S/STCH 700MH 1400MH DS100426

0-10 V PULSE CONTROL DIMMER LED DRIVER IC

Abstract: igbt dimmer Boost output voltage feedback input Base drive output for boost BJT Driver parameter configuration , connected on the line. If no dimmer is connected, the block switches the boost BJT (BDRV pin) for PFC and , driving the boost BJT (BDRV pin). The purpose is to match the load requirement of the dimmer The LED , the boost output capacitor. To provide accurate impedance, the gain (β) of the boost BJT is , voltage. ASU pin is open by default so that ASU BJT (Q3 in Figure 11.1) is turned on and VCC capacitors
iWatt
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0-10 V PULSE CONTROL DIMMER LED DRIVER IC igbt dimmer W3617 120VAC/230VAC IEC61000-3-2

dimmer LED

Abstract: Input Boost output voltage feedback input Base drive output for boost BJT Driver parameter , block switches the boost BJT (BDRV pin) for PFC and stores the energy in the boost output capacitor , provides dynamic impedance to interface the dimmer by driving the boost BJT (BDRV pin). The purpose is to , impedance, the gain (β) of the boost BJT is calibrated (BISENSE pin). The block also measures the dimmer , ) is charged to the peak of line voltage. ASU pin is open by default so that ASU BJT (Q3 in Figure
iWatt
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dimmer LED W3616

LB 1639

Abstract: transistor Bf 444 1.90 2.00 .899 .808 .723 .660 .610 .583 .560 .547 .538 .535 .534 .533 .533 .534 .538 , -52.3 -54.7 57.2 -59.9 -62.8 -65.7 -68.8 -72.0 -75.3 -78.8 -82.3 UPA801T TYPICAL , 55.6 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 , -76.3 -79.6 -83.0 -86.4 UPA801T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1
California Eastern Laboratories
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NE856 LB 1639 transistor Bf 444 651 lem ua 722 fc amp 827 578 3 pin transistor bf 422 NPN

LB 1639

Abstract: UPA801T 1.90 2.00 .899 .808 .723 .660 .610 .583 .560 .547 .538 .535 .534 .533 .533 .534 .538 , -52.3 -54.7 57.2 -59.9 -62.8 -65.7 -68.8 -72.0 -75.3 -78.8 -82.3 UPA801T TYPICAL , 55.6 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 , -76.3 -79.6 -83.0 -86.4 UPA801T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1
California Eastern Laboratories
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BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 transistor BF 507

LB 1639

Abstract: transistor Bf 444 1.50 1.60 1.70 1.80 1.90 2.00 MAG .899 .808 .723 .660 .610 .583 .560 .547 .538 .535 .534 .533 .533 .534 , .411 S22 ANG -17.3 -29.2 -36.4 -39.5 -42.0 -44.2 -45.9 -47.9 -49.9 -52.3 -54.7 57.2 -59.9 -62.8 -65.7 , 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 .337 .337 .300 .290 .281 , PART NUMBER UPA801T-T1-A QUANTITY 3000 PACKAGING Tape & Reel UPA801T NONLINEAR MODEL BJT
California Eastern Laboratories
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transistor BF 258 transistor BF 236 transistor 4341

kf 203 transistor

Abstract: 682 MARKING SOT-23 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 .547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS , Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1 , CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters
California Eastern Laboratories
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NE68100 kf 203 transistor 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135

iW3623

Abstract: IW3623-00 Base drive for Boost BJT Chooses input start-up voltage and brown-out shutdown voltage Rev. 0.8 , iWattâ'™s proprietary BJT boost switch control technique, which achieves high power factor and low THD , current limit. Pin 4 â'" BDRV Base drive for the boost switching circuit BJT switch. Pin 5 â'" CFG , when VIN_A is less than 0.13V. The BJT emitter resistor provides over-current protection for boost circuit: IQC(MAX) = VOCP (boost) â" Rs (9.1) To minimize BJT turn-on loss and reduce EMI, the BJT is
iWatt
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iW3623 IW3623-00 W3623 277VAC

2SC3583

Abstract: BJT BF 167 5000 .781 .609 .558 .540 .547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 VCE = 8 V, IC = 30 mA 100 , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 0.56 IS , Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1 , CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters
California Eastern Laboratories
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2SC3583 BJT BF 167 marking 855 sot 353 SOT-143 MARKING 557 2SC5012 NE68118

NE68135

Abstract: transistor npn d 2078 100 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 .547 .549 .551 .551 -32.1 -117.6 -154.7 , 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 -49.9 -139.7 -168.1 -177.7 168.5 151.9 , LBX Base LB CCE LCX Collector Q1 CBEPKG LE LC CCEPKG LEX Emitter BJT NONLINEAR , CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR , LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE
California Eastern Laboratories
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NE68133-T1B-A transistor npn d 2078 transistor bf 494 mje 3009 common emitter bjt NE68139-T1 NE68139R-T1 NE68118-T1-A NE68119-T1-A NE68130-T1-A

NE68130

Abstract: 1820 0944 .540 .547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 VCE = 8 V, IC = 30 mA 100 500 1000 1500 2000 , LCX Collector LB Base CCE LE CBEPKG CCEPKG LC LEX Emitter BJT NONLINEAR , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS BF , CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters UNITS
California Eastern Laboratories
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NE68130 1820 0944 ca 4558 NE68119 bjt 522 BJT IC Vce

kf 203 transistor

Abstract: 08E-12 .540 .547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 VCE = 8 V, IC = 30 mA 100 500 1000 1500 2000 , LCX Collector LB Base CCE LE CBEPKG CCEPKG LC LEX Emitter BJT NONLINEAR , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS , CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters UNITS
California Eastern Laboratories
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08E-12 IC 2030 PIN CONNECTIONS BF 194 npn transistor MICROWAVE TRANSISTOR epitaxial micro-x RF TRANSISTOR NPN MICRO-X

BJT characteristics

Abstract: NE68135 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 .547 .549 .551 .551 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 , LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 UNITS Parameters Q1 , Collector LB Base CCE CCEPKG LE LEX Emitter UNITS BJT NONLINEAR MODEL PARAMETERS , LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1
California Eastern Laboratories
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BJT characteristics lc 945 p transistor NPN TO 92 7926 SOT-143R 11481 NE68139

Transistors BF 494

Abstract: Transistor BJT 547 b = 8 V, Ic = 10 mA 100 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 .547 .549 .551 .551 , 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 -49.9 -139.7 , Gain MSG = Maximum Stable Gain NE681 SERIES NE68118 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR , eterLibraryatwww.cel.com for this data. NE681 SERIES NE68119 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL , MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS < 1 ) Parameters IS BF NF VAF IKF ISE NE BR NR VAR
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OCR Scan
Transistors BF 494 Transistor BJT 547 b transistor kf 469

42019 AC

Abstract: Technology Matchingâ"¢ Applied â¡ Si BJT | g f G aA s H BT â¡ â¡ Si Bi-CM O S P ackage , PCC220CNTR-ND PCT3105TR-ND DD0GM33 547 Rev AO 960713 Evaluation Board Layout 1.55â' x 1.07â' CL
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OCR Scan
42019 AC RF2127 1800MH 1900MH RF2125 1G04131 RF2127PCBA
Abstract: 0.005 with respect to datum "A". Optimum Technology Matching® Applied ü Si BJT GaAs HBT , Board Layout 2â' x 2â' MODULATORS AND UPCONVERTERS 5 Rev A5 010418 5-47 RF2424 RF Micro Devices
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1000MH SSOP-16
Abstract: 5 .012 .008 1 .050 .016 Si BJT .010 .004 .009 MODULATORS AND UPCONVERTERS , Preliminary MODULATORS AND UPCONVERTERS 5 Rev A3 990210 5-47 RF2424 Preliminary RF Micro Devices
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