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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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Bipolar Junction Transistor

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Abstract: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851 DZT851, DZT853 DZT853, DZT951 DZT951, DZT953 DZT953 · Single Transistors in SOT-223 Package · Highest Collector Current Rating Among Diodes, Inc.'s Bipolar Junction Transistor Product Line (5A for PNP and 6A for NPN) · Low Collector-to-Emitter Saturation Voltage VCE(sat) · Complementary Pairs: o DZT851 DZT851 (NPN) and DZT951 DZT951 (PNP) o DZT853 DZT853 (NPN) and DZT953 DZT953 (PNP) DZT3150 DZT3150 · Single 5A NPN ... Original
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2 pages,
54.05 Kb

NPN Transistor 5A Bipolar Junction Transistor npn DZT851 100V transistor npn 5a DZT951 DZT953 DZT3150 DZT853 FZT953 bipolar junction transistor datasheet abstract
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Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit ... Original
datasheet

2 pages,
15.86 Kb

Spice Parameter, Bipolar Transistor CPH5905 830P a 1023 transistor Bipolar Junction Transistor CPH5905 abstract
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Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit ... Original
datasheet

2 pages,
15.93 Kb

680P jfet bf CPH5902 Bipolar Junction Transistor CPH5902 abstract
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Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit ... Original
datasheet

2 pages,
15.83 Kb

bipolar junction transistor CPH5901 CPH5901 abstract
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Abstract: New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H , 0.178 2. High DC current gain. All Dimensions in mm 3. NPN SOT-23 Transistor. Benefits 1. High Collector Current Transistor In a Small Package. 2. General Purpose Amplifier. Availability ... Original
datasheet

2 pages,
105.26 Kb

transistor k 265 transistor 305 ic 805 AUK Semiconductor Bipolar Junction Transistor MMBT123S MMBT123S abstract
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Abstract: , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , using a CMOS device, because the transconductance of a CMOS device is low compared to that of a bipolar junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic ... Original
datasheet

5 pages,
37.58 Kb

7490 IC CHIP tsmc bjt model tsmc 0.18um CMOS transistor APP4231 MAX2645 ic 7490 TSMC cmos 0.18um Datasheet of 7490 IC ic 7490 data sheet TSMC 0.18um Bipolar Junction Transistor datasheet abstract
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Abstract: Hewlett-Packard manufactures bipolar junction transistors using the Self-Aligned Transistor (SAT) process. This , capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in the understanding of the ... Original
datasheet

1 pages,
22.51 Kb

AT-420 414 rf transistor Bipolar Junction Transistor datasheet abstract
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Abstract: bipolar junction transistor are strongly related to two design parameters. The pitch, or , mLlíM PA CK A R D H EW LETT' RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in , Therefore, silicon bipolar transistors offer designers a familiiu', reliable, cost effective solution to ... OCR Scan
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1 pages,
50.82 Kb

AT-420 datasheet abstract
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Abstract: = kT . q Measure the parameters IS , , and VAF for the 2N4400 2N4400 Bipolar Junction Transistor using , experimental understanding of the operation of the bipolar transistor and on relating the experimental , IS , , and VAF are key parameters that are used to chararize the operation of the bipolar junction , light-activated circuit. Components Needed: 2N4400 2N4400 BJT, MC 14007 transistor array, Q4015L5 Q4015L5 Triac, Q4010LS2 Q4010LS2 SCR, XE2410 XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or ... Original
datasheet

7 pages,
398.35 Kb

14007 1N4148 2N4400 circuits using BJT design of triggering circuit of mosfet Photo SCR BJT characteristics MC14007 BJT Transistors mc 14007 bipolar junction transistor Photo resistor bjt ic operational amplifier 2N4400 abstract
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Abstract: capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology (both in the understanding of the device physics and , anufactures bipolar junction transistors using th e Self Aligned T ransis tor (SAT) process. This ... OCR Scan
datasheet

1 pages,
63.78 Kb

AT605 AT-005 AT-016 AT-005 abstract
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Bipolar Junction Transistor (BJT) A PN junction device formed from back to back junctions. Since it is a three terminal device
www.datasheetarchive.com/files/agilent/hprfhelp/glossary/glos_a_e/bjt.htm
Agilent 23/11/1999 13.47 Kb HTM bjt.htm
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 15 mA ! Common Emitter S-Parameters: August 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.3400 -69.0 15.940 120.0 0.0200 69.0 0.7500 -15.0 0.300 0.2600 -130.0 6.760 98.0 0.0400 68.0 0.6000 -19.0 0.500 0.2600 -156.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfs17p/rm5v015m-v1.s2p
Siemens 10/08/1994 0.97 Kb S2P rm5v015m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 5 mA ! Common Emitter S-Parameters: August 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.6300 -44.0 10.780 134.0 0.0300 69.0 0.8700 -11.0 0.300 0.3800 -98.0 5.370 107.0 0.0500 57.0 0.7000 -20.0 0.500 0.3200 -130.0 3.590
www.datasheetarchive.com/files/siemens/ehdata/spar/bfs17p/rm5v05m0-v1.s2p
Siemens 10/08/1994 0.97 Kb S2P rm5v05m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 2 mA ! Common Emitter S-Parameters: August 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.8300 -30.0 5.960 147.0 0.0300 73.0 0.9500 -7.0 0.300 0.5800 -76.0 3.690 118.0 0.0700 53.0 0.8200 -19.0 0.500 0.4500 -106.0 2.690
www.datasheetarchive.com/files/siemens/ehdata/spar/bfs17p/rm5v02m0-v1.s2p
Siemens 10/08/1994 0.97 Kb S2P rm5v02m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 10 mA ! Common Emitter S-Parameters: August 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.4400 -60.0 14.210 125.0 0.0200 69.0 0.7900 -14.0 0.300 0.2900 -117.0 6.350 100.0 0.0400 64.0 0.6300 -19.0 0.500 0.2700 -148.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfs17p/rm5v010m-v1.s2p
Siemens 10/08/1994 0.97 Kb S2P rm5v010m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 5 V IC = 20 mA ! Common Emitter S-Parameters: August 1990 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.2700 -77.0 16.690 117.0 0.0200 70.0 0.7200 -14.0 0.300 0.2500 -138.0 6.880 96.0 0.0400 69.0 0.5800 -17.0 0.500 0.2600 -161.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfs17p/rm5v020m-v1.s2p
Siemens 10/08/1994 0.97 Kb S2P rm5v020m-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 5 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.8300 -19.0 12.740 152.0 0.0300 78.0 0.9500 -9.0 0.300 0.6500 -57.0 8.560 125.0 0.0600 63.0 0.8000 -25.0 0.500 0.4900 -84.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v5m0.s2p
Siemens 10/08/1994 0.98 Kb S2P ri10v5m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 2 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9200 -14.0 6.460 161.0 0.0300 80.0 0.9800 -6.0 0.300 0.8100 -43.0 5.280 140.0 0.0700 66.0 0.9000 -19.0 0.500 0.6900 -65.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v2m0.s2p
Siemens 10/08/1994 0.98 Kb S2P ri10v2m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 6 V IC = 20 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.5100 -49.0 21.130 133.0 0.0200 70.0 0.7900 -16.0 0.300 0.3200 -106.0 10.350 106.0 0.0500 65.0 0.5600 -27.0 0.500 0.2700 -138.0
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri6v020m.s2p
Siemens 10/08/1994 0.98 Kb S2P ri6v020m.s2p
! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 1 V IC = 1 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9380 -16.4 3.510 165.6 0.0500 79.4 0.9810 -9.4 0.150 0.9170 -24.5 3.450 158.7 0.0730 74.4 0.9620 -13.8 0.200 0.8920 -32.2 3.370
www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri1v01m0.s2p
Siemens 10/08/1994 1.17 Kb S2P ri1v01m0.s2p