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PMP6710 Texas Instruments 85VAC-265VAC Input, 12V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
PMP6788 Texas Instruments 85VAC-265VAC Input, 15V/1A Output, Green-mode Flyback With BJT visit Texas Instruments
LM96163CISDX/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments
LM96163CISD/NOPB Texas Instruments Remote Diode Dig Temp Sens w/Int Fan Cntrl & TruTherm BJT Transistor Beta Compensation Tech 10-WSON -40 to 125 visit Texas Instruments Buy
LM95245CIMMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-VSSOP -40 to 125 visit Texas Instruments
LM95245CIMX Texas Instruments Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation (45nm) 8-SOIC visit Texas Instruments

Bipolar Junction Transistor

Catalog Datasheet MFG & Type PDF Document Tags

bipolar junction transistor

Abstract: FZT953 New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 · Single Transistors in SOT-223 Package · Highest Collector Current Rating Among Diodes, Inc.'s Bipolar Junction Transistor Product Line (5A for PNP and 6A for NPN) · Low Collector-to-Emitter Saturation Voltage VCE(sat) · Complementary Pairs: o DZT851 (NPN) and DZT951 (PNP) o DZT853 (NPN) and DZT953 (PNP) DZT3150 · Single 5A NPN
Diodes
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FZT953 bipolar junction transistor Bipolar Junction Transistor npn npn 5a 100V transistor npn 5a NPN Transistor 5A FZT853 FZT851 FZT951 CZT3150

tsmc 0.18um CMOS transistor

Abstract: Bipolar Junction Transistor , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , using a CMOS device, because the transconductance of a CMOS device is low compared to that of a bipolar junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic
Maxim Integrated Products
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MAX2645 APP4231 tsmc 0.18um CMOS transistor TSMC 0.18um TSMC 0.18um Process parameters ic 7490 data sheet Datasheet of 7490 IC tsmc bjt model AN4231
Abstract: operation of the bipolar junction transistor. These parameters appear in the forward active model for the , understanding of the operation of the bipolar transistor and on relating the experimental performance to the , Page 1 of 5 Updated: 01/04/2014 Measure the parameters IS , β, and VAF for the 2N4400 Bipolar Junction Transistor using the Agilent 4155 Semiconductor Parameter Analyzer and compare with the values , and 70s, the small-signal parameters of the bipolar transistor were generally expressed in terms of -
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Q4015L5 Q4010LS2

Bipolar Junction Transistor

Abstract: AUK Semiconductor New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H , 0.178 2. High DC current gain. All Dimensions in mm 3. NPN SOT-23 Transistor. Benefits 1. High Collector Current Transistor In a Small Package. 2. General Purpose Amplifier. Availability
Diodes
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AUK Semiconductor ic 805 transistor 305 transistor k 265 STD123S BC818 BCW65 BCW65C

Q4010LS2

Abstract: BJT amplifiers = kT . q Measure the parameters IS , , and VAF for the 2N4400 Bipolar Junction Transistor using , experimental understanding of the operation of the bipolar transistor and on relating the experimental , IS , , and VAF are key parameters that are used to chararize the operation of the bipolar junction , light-activated circuit. Components Needed: 2N4400 BJT, MC 14007 transistor array, Q4015L5 Triac, Q4010LS2 SCR, XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or
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BJT amplifiers BJT IC Vce red laser pointer laser diode mosfet triggering circuit bjt ic operational amplifier MC14007

Bipolar Junction Transistor

Abstract: 680P SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit
SANYO Electric
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CPH5902 680P SPICE PARAMETER, sanyo, bipolar transistor a 1023 transistor jfet bf

Bipolar Junction Transistor

Abstract: a 1023 transistor SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit
SANYO Electric
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CPH5905 830P Spice Parameter, Bipolar Transistor SPICE PARAMETER

SPICE PARAMETER, sanyo, bipolar transistor

Abstract: CPH5901 SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit
SANYO Electric
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CPH5901 transistor ne 107

Bipolar Junction Transistor

Abstract: 414 rf transistor . Hewlett-Packard manufactures bipolar junction transistors using the Self-Aligned Transistor (SAT) process. This , capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in the understanding of the
Hewlett-Packard
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AT-420 414 rf transistor AT-640 AT-414/415

AT-420

Abstract: bipolar junction transistor are strongly related to two design parameters. The pitch, or , mLlíM PA CK A R D H EW LETT' RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in , Therefore, silicon bipolar transistors offer designers a familiiu', reliable, cost effective solution to
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ccb transistor

Abstract: HP4279A Application Note No. 024 Discrete & RF Semiconductors Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of the three ports of the transistor. Historically, a number of different capacitance characterizations have been used and published. This application note shows the most popular of these different definitions. Definition: C cb Ccb Capacitance, Collector-Base B
Infineon Technologies
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AN024 ccb transistor HP4279A C22E

AT605

Abstract: capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology (both in the understanding of the device physics and , anufactures bipolar junction transistors using th e Self Aligned T ransis tor (SAT) process. This
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AT605 AT414 AT-214 AT-005 AT-016

transistor bjt

Abstract: CX20464 signal acquisition (narrow: 4 to 8, wide: 16h to 180). Replaced the Bipolar Junction Transistor (BJT
Mindspeed Technologies
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CX20464 transistor bjt CX20464-11P CX20464-12P CX20464-13P CX20464-15P

TRANSISTORS BJT list

Abstract: "BJT Transistors" . . . . . . . 1 Bipolar Junction Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Junction Field Effect Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , here. Bipolar Junction Transistor The bipolar junction transistor (BJT) was the first active , Junction Field Effect Transistor The junction field effect transistor is called the JFET, and it comes in
Texas Instruments
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SLOA026 TRANSISTORS BJT list bjt differential amplifier application circuits Germanium Transistor transistor BJT Driver

TRANSISTORS BJT list

Abstract: bjt differential amplifier . . . . Bipolar Junction Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Field Effect Transistor . . , . Bipolar Junction Transistor The bipolar junction transistor (BJT) was the first active semiconductor , transistors. Junction Field Effect Transistor The junction field effect transistor is called the JFET, and , effect transistor (FET) manufacturing process was perfected, it began competing with the BJT. Since
Texas Instruments
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bjt differential amplifier pnp germanium low power bjt input output bjt npn transistor pnp germanium bjt pnp germanium small signal bjt SLOA026A

HP4279A

Abstract: Bipolar Junction Transistor Rev. 2.0, 2006-11-14 Application Note No. 024 Parasitic Capacitance in Bipolar Junction Transistors 1 Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of , Application Note No. 024 Parasitic Capacitance in Bipolar Junction Transistors Cce Cobo C apacitance , or other persons may be endangered. Application Note No. 024 Parasitic Capacitance in Bipolar
Infineon Technologies
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AN023
Abstract: ON Semiconductort General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MMBT2131T1 MMBT2131T3 0.7 AMPERES 30 VOLTS ­ V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise , ­ Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance ­ Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO ON Semiconductor
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AN569
Abstract: ⡠Remote enable function The H V8051/HV8053 has two internal oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set , On-resistance o f switching transistor 15 £2 Idd V DD supply current (excluding HV8051 1.5 , el-osc = ^ ^£2 ^sw Switching transistor frequency ^SW-osc = 330KS2, R el-osc = 5 D3 Switching transistor duty cycle Recommended Operating Conditions Parameter Symbol Ta Load capacitance -
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HV8053 HV8051P HV8051LG HV8051X HV8053P HV8053LG

1N41482

Abstract: LQH4N102K04M00 Remote enable function The HV8051/HV8053 has two internal oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an , switching transistor 15 VDD supply current (excluding HV8051 1.5 mA VDD = 1.0V to 1.6V , VDD = 1.0V to 1.6V, RSW-osc = 470K, REL-osc = 10 M HV8053 Switching transistor frequency , = 330K, REL-osc = 5 M 85 % Switching transistor duty cycle VDD = 1.0V to 3.5V
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HV8053X 1N41482 LQH4N102K04M00 a 1413 transistor transistor K 1413 transistor a 1413

h bridge bjt

Abstract: transistor 1N4148 bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT , On-resistance of switching transistor VDD supply current (excluding inductor current) HV8061 HV8063 HV8061 , 10M fi V qq = 1.0V to 3.5V VA.B output drive frequency ^sw Switching transistor frequency HV8061 HV8063 D3 Switching transistor duty cycle Recommended Operating Conditions Symbol V dd
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LQH4N102K04M h bridge bjt transistor 1N4148 Transistor BJT High Current 24v to HV8061LG HV8063LG HV8061NG HV8063NG HV8061X HV8063X
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