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Part Manufacturer Description Datasheet BUY
2SA2007E ROHM Semiconductor Transistors Bipolar - BJT Trans GP BJT PNP 60V 12A visit Digikey
2SB1565FU6E ROHM Semiconductor Transistors Bipolar - BJT Trans GP BJT PNP 60V 3A visit Digikey
BFR 92P E6327 Infineon Technologies AG Bipolar Transistors TRANS GP BJT NPN 15V 0.045A visit Digikey
2SC5015-T1-A Renesas Electronics Corporation TRANSISTOR,BJT,NPN,6V V(BR)CEO,30MA I(C),SOT-343R visit Digikey
2SA1313-O(TE85L,F) Toshiba America Electronic Components TRANSISTOR,BJT,PNP,50V V(BR)CEO,500MA I(C),SOT-23 visit Digikey
2SC5015-A Renesas Electronics Corporation TRANSISTOR,BJT,NPN,6V V(BR)CEO,30MA I(C),SOT-343R visit Digikey

Bipolar Junction Transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 · Single Transistors in SOT-223 Package · Highest Collector Current Rating Among Diodes, Inc.'s Bipolar Junction Transistor Product Line (5A for PNP and 6A for NPN) · Low Collector-to-Emitter Saturation Voltage VCE(sat) · Complementary Pairs: o DZT851 (NPN) and DZT951 (PNP) o DZT853 (NPN) and DZT953 (PNP) DZT3150 · Single 5A NPN Diodes
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FZT953 Bipolar Junction Transistor npn 100V transistor npn 5a npn 5a NPN Transistor 5A FZT853 FZT851 FZT951 CZT3150
Abstract: , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , using a CMOS device, because the transconductance of a CMOS device is low compared to that of a bipolar junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic Maxim Integrated Products
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MAX2645 APP4231 tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters TSMC 0.18um ic 7490 data sheet tsmc bjt model Datasheet of 7490 IC AN4231
Abstract: operation of the bipolar junction transistor. These parameters appear in the forward active model for the , understanding of the operation of the bipolar transistor and on relating the experimental performance to the , Page 1 of 5 Updated: 01/04/2014 Measure the parameters IS , β, and VAF for the 2N4400 Bipolar Junction Transistor using the Agilent 4155 Semiconductor Parameter Analyzer and compare with the values , and 70s, the small-signal parameters of the bipolar transistor were generally expressed in terms of -
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Q4015L5 Q4010LS2
Abstract: New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H , 0.178 2. High DC current gain. All Dimensions in mm 3. NPN SOT-23 Transistor. Benefits 1. High Collector Current Transistor In a Small Package. 2. General Purpose Amplifier. Availability Diodes
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AUK Semiconductor ic 805 transistor 305 transistor k 265 STD123S BC818 BCW65 BCW65C
Abstract: = kT . q Measure the parameters IS , , and VAF for the 2N4400 Bipolar Junction Transistor using , experimental understanding of the operation of the bipolar transistor and on relating the experimental , IS , , and VAF are key parameters that are used to chararize the operation of the bipolar junction , light-activated circuit. Components Needed: 2N4400 BJT, MC 14007 transistor array, Q4015L5 Triac, Q4010LS2 SCR, XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or -
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BJT amplifiers BJT IC Vce red laser pointer laser diode mosfet triggering circuit bjt ic operational amplifier Photo resistor
Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit SANYO Electric
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CPH5902 680P a 1023 transistor jfet bf
Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit SANYO Electric
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CPH5905 830P SPICE PARAMETER Spice Parameter, Bipolar Transistor
Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit SANYO Electric
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CPH5901 transistor ne 107
Abstract: . Hewlett-Packard manufactures bipolar junction transistors using the Self-Aligned Transistor (SAT) process. This , capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in the understanding of the Hewlett-Packard
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AT-420 414 rf transistor AT-640 AT-414/415
Abstract: bipolar junction transistor are strongly related to two design parameters. The pitch, or , mLlíM PA CK A R D H EW LETT' RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in , Therefore, silicon bipolar transistors offer designers a familiiu', reliable, cost effective solution to -
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Abstract: Application Note No. 024 Discrete & RF Semiconductors Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of the three ports of the transistor. Historically, a number of different capacitance characterizations have been used and published. This application note shows the most popular of these different definitions. Definition: C cb Ccb Capacitance, Collector-Base B Infineon Technologies
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AN024 ccb transistor HP4279A C22E
Abstract: capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology (both in the understanding of the device physics and , anufactures bipolar junction transistors using th e Self Aligned T ransis tor (SAT) process. This -
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AT605 AT414 AT-214 AT-005 AT-016
Abstract: signal acquisition (narrow: 4 to 8, wide: 16h to 180). Replaced the Bipolar Junction Transistor (BJT Mindspeed Technologies
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CX20464 transistor bjt CX20464-11P CX20464-12P CX20464-13P CX20464-15P
Abstract: . . . . . . . 1 Bipolar Junction Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Junction Field Effect Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , here. Bipolar Junction Transistor The bipolar junction transistor (BJT) was the first active , Junction Field Effect Transistor The junction field effect transistor is called the JFET, and it comes in Texas Instruments
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SLOA026 TRANSISTORS BJT list Germanium Transistor transistor BJT Driver pnp germanium small signal bjt
Abstract: . . . . Bipolar Junction Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction Field Effect Transistor . . , . Bipolar Junction Transistor The bipolar junction transistor (BJT) was the first active semiconductor , transistors. Junction Field Effect Transistor The junction field effect transistor is called the JFET, and , effect transistor (FET) manufacturing process was perfected, it began competing with the BJT. Since Texas Instruments
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bjt differential amplifier pnp germanium bjt pnp germanium low power bjt input output bjt npn transistor power BJT PNP jfet discrete differential transistor SLOA026A
Abstract: Rev. 2.0, 2006-11-14 Application Note No. 024 Parasitic Capacitance in Bipolar Junction Transistors 1 Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of , Application Note No. 024 Parasitic Capacitance in Bipolar Junction Transistors Cce Cobo C apacitance , or other persons may be endangered. Application Note No. 024 Parasitic Capacitance in Bipolar Infineon Technologies
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AN023
Abstract: ON Semiconductort General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MMBT2131T1 MMBT2131T3 0.7 AMPERES 30 VOLTS ­ V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise , ­ Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance ­ Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO ON Semiconductor
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AN569
Abstract: ⡠Remote enable function The H V8051/HV8053 has two internal oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set , On-resistance o f switching transistor 15 £2 Idd V DD supply current (excluding HV8051 1.5 , el-osc = ^ ^£2 ^sw Switching transistor frequency ^SW-osc = 330KS2, R el-osc = 5 D3 Switching transistor duty cycle Recommended Operating Conditions Parameter Symbol Ta Load capacitance -
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HV8053 HV8051P HV8051LG HV8051X HV8053P HV8053LG
Abstract: Remote enable function The HV8051/HV8053 has two internal oscillators, a switching bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT is set by an , switching transistor 15 VDD supply current (excluding HV8051 1.5 mA VDD = 1.0V to 1.6V , VDD = 1.0V to 1.6V, RSW-osc = 470K, REL-osc = 10 M HV8053 Switching transistor frequency , = 330K, REL-osc = 5 M 85 % Switching transistor duty cycle VDD = 1.0V to 3.5V -
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HV8053X 1N41482 LQH4N102K04M00 a 1413 transistor transistor a 1413 transistor K 1413
Abstract: bipolar junction transistor (BJT), and a high-voltage EL lamp driver. The frequency for the switching BJT , On-resistance of switching transistor VDD supply current (excluding inductor current) HV8061 HV8063 HV8061 , 10M fi V qq = 1.0V to 3.5V VA.B output drive frequency ^sw Switching transistor frequency HV8061 HV8063 D3 Switching transistor duty cycle Recommended Operating Conditions Symbol V dd -
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LQH4N102K04M 24v to h bridge bjt transistor 1N4148 Transistor BJT High Current HV8061LG HV8063LG HV8061NG HV8063NG HV8061X HV8063X
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