NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851 DZT851, DZT853 DZT853, DZT951 DZT951, DZT953 DZT953 · Single Transistors in SOT-223 Package · Highest Collector Current Rating Among Diodes, Inc.'s Bipolar Junction Transistor Product Line (5A for PNP and 6A for NPN) · Low Collector-to-Emitter Saturation Voltage VCE(sat) · Complementary Pairs: o DZT851 DZT851 (NPN) and DZT951 DZT951 (PNP) o DZT853 DZT853 (NPN) and DZT953 DZT953 (PNP) DZT3150 DZT3150 · Single 5A NPN ... | Original |
2 pages, |
NPN Transistor 5A Bipolar Junction Transistor npn DZT851 100V transistor npn 5a DZT951 DZT953 DZT3150 DZT853 FZT953 bipolar junction transistor datasheet abstract |
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| Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit ... | Original |
2 pages, |
jfet bf CPH5902 Bipolar Junction Transistor CPH5902 abstract |
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| Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit ... | Original |
2 pages, |
Spice Parameter, Bipolar Transistor CPH5905 a 1023 transistor Bipolar Junction Transistor CPH5905 abstract |
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| Abstract: SPICE PARAMETER NPN BIPOLAR JUNCTION TRANSISTOR model : Gummel-Poon Parameter Value Unit ... | Original |
2 pages, |
bipolar junction transistor CPH5901 CPH5901 abstract |
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| Abstract: New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H , 0.178 2. High DC current gain. All Dimensions in mm 3. NPN SOT-23 Transistor. Benefits 1. High Collector Current Transistor In a Small Package. 2. General Purpose Amplifier. Availability ... | Original |
2 pages, |
ic 805 Bipolar Junction Transistor MMBT123S MMBT123S abstract |
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| Abstract: , Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating , using a CMOS device, because the transconductance of a CMOS device is low compared to that of a bipolar junction transistor (BJT). Thus, nonconventional followers must be designed to give a gain close to 1. In , of 5 and: Where is the DC gain from the transistor, UO is surface mobility, COX is gate oxide capacitance per unit area, W is transistor gate width, and L is transistor gate length. Note: The intrinsic ... | Original |
5 pages, |
MAX2645 APP4231 7490 IC CHIP TSMC 0.18um ic 7490 Datasheet of 7490 IC ic 7490 data sheet Bipolar Junction Transistor datasheet abstract |
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| Abstract: Hewlett-Packard manufactures bipolar junction transistors using the Self-Aligned Transistor (SAT) process. This , capabilities of an interdigitated microwave bipolar junction transistor are strongly related to two design , RF and Microwave Silicon Bipolar Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology (both in the understanding of the ... | Original |
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AT-420 Bipolar Junction Transistor datasheet abstract |
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| Abstract: = kT . q Measure the parameters IS , , and VAF for the 2N4400 2N4400 Bipolar Junction Transistor using , experimental understanding of the operation of the bipolar transistor and on relating the experimental , IS , , and VAF are key parameters that are used to chararize the operation of the bipolar junction , light-activated circuit. Components Needed: 2N4400 2N4400 BJT, MC 14007 transistor array, Q4015L5 Q4015L5 Triac, Q4010LS2 Q4010LS2 SCR, XE2410 XE2410 24V-0.5A incandescent lamp, operational amplifier, photo transistor, photo resistor, or ... | Original |
7 pages, |
14007 1N4148 2N4400 bjt ic operational amplifier circuits using BJT design of triggering circuit of mosfet Photo SCR MC14007 BJT Transistors BJT characteristics laser diode mosfet triggering circuit mc 14007 bipolar junction transistor 2N4400 abstract |
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| Abstract: Application Note No. 024 Discrete & RF Semiconductors Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of the three ports of the transistor. Historically, a number of different capacitance characterizations have been used and published. This application note shows the most popular of these different definitions. Definition: C cb Ccb Capacitance, Collector-Base B ... | Original |
3 pages, |
C22E AN024 Bipolar Junction Transistor "parasitic capacitance" coax HP4279A ccb transistor datasheet abstract |
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| Abstract: the initial signal acquisition (narrow: 4 to 8, wide: 16h to 180). Replaced the Bipolar Junction Transistor (BJT) DC servo circuit with a CMOS design. Limit amp servo amplifier's default is now "off" ... | Original |
2 pages, |
CX20464 transistor bjt CX20464 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Spice parameters for RF and AF transistors In the file SIEMENS3.LIB you will find spice parameters for: - SIEMENS Grounded Emitter Transistor Line (RF BJTs) - RF Bipolar Junction Transistors - AF Bipolar Junction Transistors - Schottky and PIN-Diodes The file SPICEPAR.TXT shows a comparison of the main software model parameters to compare different modeling programs. >>>>> For nonlinear parameter text blocks for use in microwave simulators please see subdirectories www.datasheetarchive.com/files/siemens/ehdata/spice/content-v1.txt |
Siemens | 04/08/1994 | 0.6 Kb | TXT | content-v1.txt |
| * * for all RF Bipolar Junction Transistors * * (Subdir.: NL AF and RF Bipolar Junction Transistors SIEGET(R)25 and SIEGET45 SIEGET45 SIEGET45 SIEGET45 Bipolar Junction RF-Transistors -TETRODES (Subdir.: NL_MOS) * * SPICE Parameter LIB for RF, AF Transistors and Diodes . \NL_BJT\ non linear parameters for RF BJTs and SIEGET-transistors , RF BJTs and SIEGET transistors without package equivalent circuits www.datasheetarchive.com/files/infineon/ehdata/readme1.txt |
Infineon | 25/11/1998 | 6.17 Kb | TXT | readme1.txt |
| GHz for all SIEMENS RF Bipolar Junction Transistors. Please see the transistor data sheets for SPICE 2G6 Chip Data and Package Equivalent Circuits for SIEMENS RF-Transistors contain ready to use files for the transistor type plus additional informations for special usage _T.TXT for usage. The file ATTACH_T.TXT shows all transistor types and how the SPICE 2G6 text block and package equivalent circuit text block have to be combined to get the desired transistor type www.datasheetarchive.com/files/infineon/ehdata/nl_bjt/readme2.txt |
Infineon | 09/06/1997 | 1.07 Kb | TXT | readme2.txt |
| in Bipolar Junction Transistors 49 K Carrier Lifetime and Forward General Information General Information The Vceo-Mystery or How to use Low-Veco-Transistors With High Operating Voltages 57 K Measure 3 Types of Parameter and You'll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and Intermodulation 39 K Drain Supply Switching of Mobile Phone Power Amps with Pulsed www.datasheetarchive.com/files/infineon/products/35/35app2r.htm |
Infineon | 26/11/1998 | 3.2 Kb | HTM | 35app2r.htm |
| ! SIEMENS Small Signal Semiconductors ! BFQ19S BFQ19S BFQ19S BFQ19S ! Si NPN RF Bipolar Junction Transistor in SOT89 ! VCE = 10 V IC = 75 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.2700 -149.0 22.900 103.0 0.0300 72.0 0.3400 -53.0 0.300 0.2800 172.0 8.000 82.0 0.0700 73.0 0.2400 -64.0 0.500 0.2700 152.0 4 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq19s/qh10v75m-v1.s2p |
Siemens | 09/08/1994 | 0.71 Kb | S2P | qh10v75m-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR93A BFR93A BFR93A BFR93A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 8 V IC = 5 mA ! Common Emitter S-Parameters: October 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.7400 -45.0 13.500 150.0 0.0330 69.0 0.9300 -21.0 0.200 0.6400 -81.0 10.500 129.0 0.0520 57.0 0.7300 -30.0 0.500 0.4900 -132.0 5 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr93a/rl8v05m0-v1.s2p |
Siemens | 10/08/1994 | 0.91 Kb | S2P | rl8v05m0-v1.s2p |
| Capacitances in Bipolar Junction Transistors RF Transistors + MMICs Single RF Transitors, RF Transistor Arrays and MMICs in small and extra small AF Transistors Single Transistors, Transistor Arrays and Digital Transistors in small and extra small Measure 3 Types of Parameter and Youll Define a Small Signal RF-Transistor: S-Parameter, Noise-Figure and www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/prod~791.htm |
Infineon | 26/10/2000 | 34 Kb | HTM | prod~791.htm |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 6 V IC = 2 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9100 -15.0 6.490 161.0 0.0300 79.0 0.9700 -6.0 0.300 0.7900 -46.0 5.250 139.0 0.0800 64.0 0.8800 -22.0 0.500 0.6600 -71.0 4 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri6v02m0.s2p |
Siemens | 10/08/1994 | 0.97 Kb | S2P | ri6v02m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 10 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.7500 -28.0 18.200 142.0 0.0200 74.0 0.8800 -13.0 0.300 0.5200 -71.0 10.230 114.0 0.0500 63.0 0.6700 -27.0 0.500 0.3700 -99.0 7 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v10m.s2p |
Siemens | 10/08/1994 | 0.98 Kb | S2P | ri10v10m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR35AP BFR35AP BFR35AP BFR35AP ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 10 V IC = 20 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.5800 -45.0 20.300 135.0 0.0200 71.0 0.8200 -14.0 0.300 0.3400 -98.0 10.120 108.0 0.0400 65.0 0.6100 -23.0 0.500 0.2700 -129.0 6 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr35ap/ri10v20m.s2p |
Siemens | 10/08/1994 | 0.98 Kb | S2P | ri10v20m.s2p |