500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

BZX284-C7V5 transistor

Catalog Datasheet MFG & Type PDF Document Tags

marking A4t sot23

Abstract: PH C5V1 RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor, Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor
Philips Semiconductors
Original
marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: A1t SOT23 Discontinuation. See Replacement 46 BFG410W/CA NPN 22 GHz wideband transistor 934056612115 T M , NPN 5 GHz wideband transistor 934032460115 T M 3 31-dec-03 30-jun-04 BFG590W/X Standard Discontinuation. See Replacement 48 BFG67/XR NPN 8 GHz wideband transistor 934009610215 , available with 12nc 934054719215 51 BUK582-100A PowerMOS transistor Logic level FET 934023940135 , -55 TrenchMOS transistor 934054957118 T M 1 30-jun-03 30-jun-03 BUK7277
Philips Semiconductors
Original
A1t SOT23 3Ft SOT23 transistor t04 sot23 A4T SOT23 sot23 marking A1T A6t SOT23 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14 1N825 1PS59SB15

philips diode PH 33D

Abstract: philips diode PH 33J (small signal) · GA low V (BISS) transistors · GA low noise transistor · GA medium frequency
-
Original
philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1N825A 1PS59SB16 1N827 1PS59SB20 1N827A 1PS59SB21

philips diode PH 33D

Abstract: PH C5V1 example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal , transistor maximum available gain maximum minimum microwave minature integrated circuit modular amplifier - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
-
Original
PH 33D PH33D ph33g PH 33G philips diode PH 37m ph c24 1N829 1N829A 1N914 1N4148 1N4150 1N4151

Zener Diode 3v 400mW

Abstract: transistor bc548b example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
Philips Semiconductors
Original
Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF

TEA1601T

Abstract: ON4959 transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation
Philips Semiconductors
Original
TEA1601T ON4959 12NC philips OQ0260HL TEA1601T/N5 ON4959 transistor 1N4448/AT 1N4448 1N5059 VY27340B2 VY27357A2 X3A-BFQ32